Fiche : [DATA049]

Titre : Recherche sur l'auteur Dante E. PICCONE, mars 2000.

Cité dans : [DIV096]  Recherches bibliographiques diverses, janvier 2019.
Cité dans : [DATA042] Recherche sur l'auteur Istvan SOMOS, mars 2000.

Info : Dante E. PICCONE
Vers : Recherche du 4 mars 2000 - Alta Vista
Vers : Recherche du 4 mars 2000 - maison
Vers : Mise à jour de mars 2000
Vers : Recherche LMP Catagne du 16 mars 2000
Vers : Recherche STN Easy du 16 mars 2000
Vers : Articles des années 1990 - 1999
Vers : Articles des années 1980 - 1989
Vers : Articles des années 1970 - 1979
Vers : Articles des années 1960 - 1969

Recherche du 4 mars 2000 - Alta Vista

  [1] : [SHEET194] D.G. McGHEE, Pulsed Power Supply for Three APS Septum Magnets, LS Note 170, March 24, 1991
  [2] :  [DATA043] Silicon Power, Technical papers, mars 2000.
  [3] :  [PAP159]  ...

Recherche du 4 mars 2000 - maison

  [1] :  [DATA043] Silicon Power, Technical papers, mars 2000.
  [2] :  [DATA035] Recherche sur les mots clés thermal + fatigue + semiconductor et reliability + thermal + cycle, mars 2004.

  [3] : [SHEET195] D.E. PICCONE, I.L. SOMOS, W.H. TOBIN, Piecewise Simulation (PS) Computation Method for Computing Transient Phenomena, IEEE-IAS Annual Meeting, September 1975, pp. 326-331.
  [4] : [SHEET193] I.L. SOMOS, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Power Semiconductors-A New Method For Predicting The On-State Characteristic and Temperature Rise During Multi Cycle Fault Currents, conf.Rec.IEEE.IAS'93, vol. 2, pp.1242-1247.
  [5] : [SHEET169] I.L. SOMOS, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Power semiconductors empirical diagrams expressing life as a function of temperature excursion, IEEE Transactions on Magnetics, jan. 1993, vol. 29, issue 1, part 2, pp. 517-522.
  [6] : [SHEET196] R.G. RODRIGUES, D.E. PICCONE, W.H. TOBIN, L.W. WILLINGER, J.A. BARROW, T.A. HANSEN, J. ZHAO, L. CAO, Operation Of Power Semiconductors At Their Thermal Limit, 1998 IEEE IASociety Annual Meeting, October 12-15, 1998, 12 pages.
  [7] : [SHEET197] R. RODRIGUES, D.E. PICCONE, A. HUANG, R. De DONCKER, A Very High Voltage, Large Area MTOtm (MOS Turn Off Thyristor) for PEBB Applications, GOMAC '97, 10-13 March 1997, 12 pages.
  [8] : [SHEET198] R. RODRIGUES, D.E. PICCONE, A. HUANG, R. De DONCKER, MTOtm Thyristor Power Switches, Power Systems World ‘97, September 6-12, 1997, 12 pages.
  [9] : [SHEET194] D.G. McGHEE, Pulsed Power Supply for Three APS Septum Magnets, LS Note 170, March 24, 1991
 [10] : [SHEET192] E. PROFUMO, A. TENCONI, S. FACELLI, B. PASSERINI, A. GUERRA, An Experimentally Validated Transient Thermal Impedance Model for High Power Diodes and Thyristors, EPE Journal, Volume 9, N° 3/4, january 2000, pp. 11-16.
 [11] : [SHEET155] S. JANUSZEWSKI, M. KOCISZEWSKA-SZCZERBIK, H. SWIATEK, G. SWIATEK, Semiconductor device failures in power converter service conditions, EPE Journal, Dec. 1998, vol. 7, no. 3-4, pp. 12-17.
 [12] : [SHEET119] G. COQUERY, R. LALLEMAND, D. WAGNER, M. PITON, H. BERG, K. SOMMER, Reliability improvement of the soldering thermal fatigue with AlSiC technology on traction high power IGBT modules, EPE'99, paper 904, 1999.

Mise à jour de mars 2000

  [1] : [SHEET201] I. SOMOS, D.E. PICCONE, Behavior of thyristos under transient conditions, Proceedings of the IEEE, vol. 55, no. 8, august 1967, pp. 1306-1311.
  [2] : [SHEET204] I.L. SOMOS, L.O. ERIKSSON, W.H. TOBIN, Understanding di/dt ratings and life expectancy for thyristors, Power Conversion And Intelligent Motion, pp. 56-59, February 1986.
  [3] : [SHEET205] D.E. PICCONE, I.L. SOMOS, Accelerated life tests for determining the life expectancy of thyristors due to di/dt failure modes, IEEE Industry Applications Society 1972 Conference Record, pp. 89-92.

Recherche LMP Catagne du 16 mars 2000

  [1] : [SHEET220] L.O. ERIKSSON, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Selecting fuses for power semiconductor devices, IEEE Industry Applications Magazine, Volume 2, Issue 5, Sept.-Oct. 1996, pp. 19-23.
  [2] : [SHEET169] I.L. SOMOS, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Power semiconductors empirical diagrams expressing life as a function of temperature excursion, IEEE Transactions on Magnetics, jan. 1993, vol. 29, issue 1, part 2, pp. 517-522.
  [3] : [SHEET213] I.L. SOMOS, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Power semiconductors-a new method for predicting the on-state characteristic and temperature rise during multicycle fault currents, IEEE Transactions on Industry Applications,  Nov.-Dec. 1995, pp. 12

  [1] : [SHEET196] R.G. RODRIGUES, D.E. PICCONE, W.H. TOBIN, L.W. WILLINGER, J.A. BARROW, T.A. HANSEN, J. ZHAO, L. CAO, Operation Of Power Semiconductors At Their Thermal Limit, 1998 IEEE IASociety Annual Meeting, October 12-15, 1998, 12 pages.
  [2] : [SHEET221] Turn-off characteristics of 1000 V SiC gate-turn-off thyristors, ISPSD'98.
  [3] : [SHEET216] Design and testing of high power, repetitively pulsed, solid-state closing switches
  [4] : [SHEET222] Demonstration of a 700 volt asymmetrical, 4H-SiC gate-turn-off thyristor (GTO), 1997.
  [5] : [SHEET215] D.E. PICCONE, R.W. DE DONCKER, J.A.BARROW, W.H. TOBIN, The MTO thyristor-a new high power bipolar MOS thyristor, Conference Record of the 1996 IEEE Industry Applications Conference, Thirty-First IAS Annual Meeting, IAS'96, October 1996, pp. 1472-1473.
  [6] : [SHEET214] Power semiconductor devices-examination of subcycle surge current ratings as needed for fuse selection
  [7] : [SHEET193] I.L. SOMOS, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Power Semiconductors-A New Method For Predicting The On-State Characteristic and Temperature Rise During Multi Cycle Fault Currents, conf.Rec.IEEE.IAS'93, vol. 2, pp.1242-1247.
  [8] : [SHEET219] I.L. SOMOS, D.E. PICCONE, W.H. TOBIN, Two-dimensional heat flow in a GTO having a highly interdigitated emitter, 1989.
  [9] : [SHEET200] D.E. PICCONE, L.O. ERIKSSON, J. URBANEK, W.H. TOBIN, I.L. SOMOS, A thermal analogue of higher accuracy and factory test method for predicting and supporting thyristor fault suppression ratings, IAS 1988, vol. 14, pp. 678-686.

Recherche STN Easy du 16 mars 2000

  [1] : [SHEET196] R.G. RODRIGUES, D.E. PICCONE, W.H. TOBIN, L.W. WILLINGER, J.A. BARROW, T.A. HANSEN, J. ZHAO, L. CAO, Operation Of Power Semiconductors At Their Thermal Limit, 1998 IEEE IASociety Annual Meeting, October 12-15, 1998, 12 pages.
  [2] : [SHEET221] Turn-off characteristics of 1000 V SiC gate-turn-off thyristors, ISPSD'98.
  [3] : [SHEET239] 4H-SiC gate turn-off (GTO) thyristor development, 1997.
  [4] : [SHEET216] Design and testing of high power, repetitively pulsed, solid-state closing switches
  [5] : [SHEET222] Demonstration of a 700 volt asymmetrical, 4H-SiC gate-turn-off thyristor (GTO), 1997.
  [6] : [SHEET215] D.E. PICCONE, R.W. DE DONCKER, J.A.BARROW, W.H. TOBIN, The MTO thyristor-a new high power bipolar MOS thyristor, Conference Record of the 1996 IEEE Industry Applications Conference, Thirty-First IAS Annual Meeting, IAS'96, October 1996, pp. 1472-1473.
  [7] : [SHEET220] L.O. ERIKSSON, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Selecting fuses for power semiconductor devices, IEEE Industry Applications Magazine, Volume 2, Issue 5, Sept.-Oct. 1996, pp. 19-23.
  [8] : [SHEET193] I.L. SOMOS, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Power Semiconductors-A New Method For Predicting The On-State Characteristic and Temperature Rise During Multi Cycle Fault Currents, conf.Rec.IEEE.IAS'93, vol. 2, pp.1242-1247.
  [9] : [SHEET214] Power semiconductor devices-examination of subcycle surge current ratings as needed for fuse selection
 [10] : [SHEET213] I.L. SOMOS, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Power semiconductors-a new method for predicting the on-state characteristic and temperature rise during multicycle fault currents, IEEE Transactions on Industry Applications,  Nov.-Dec. 1995, pp. 12

 [11] : [SHEET219] I.L. SOMOS, D.E. PICCONE, W.H. TOBIN, Two-dimensional heat flow in a GTO having a highly interdigitated emitter, 1989.
 [12] : [SHEET200] D.E. PICCONE, L.O. ERIKSSON, J. URBANEK, W.H. TOBIN, I.L. SOMOS, A thermal analogue of higher accuracy and factory test method for predicting and supporting thyristor fault suppression ratings, IAS 1988, vol. 14, pp. 678-686.
 [13] : [SHEET230] I.L. SOMOS, D.E. PICCONE, W.H. TOBIN, Plasma spreading loss in 100mm thyristors, PCIM magazine, june 1988.
 [14] : [SHEET231] I.L. SOMOS, D.E. PICCONE, W.H. TOBIN, Plasma spreading in 6 KV, 100 mm diameter thyristors, IEEE Industry Applications Society Annual Meeting 1987, pp. 521-526.
 [15] : [SHEET233] POWER LOSS IN LARGE AREA THYRISTORS DESIGNED FOR 50/60 HZ PHASE CONTROL RECTIFIER CIRCUITS, 1981.
 [16] : [SHEET240] FIELD TERMINATED DIODE, 1976
 [17] : [SHEET195] D.E. PICCONE, I.L. SOMOS, W.H. TOBIN, Piecewise Simulation (PS) Computation Method for Computing Transient Phenomena, IEEE-IAS Annual Meeting, September 1975, pp. 326-331.
 [18] : [SHEET241] FIELD CONTROLLED THYRISTOR (FCT)-A NEW ELECTRONIC COMPONENT, 1975.
 [19] : [SHEET235] I.L. SOMOS, D.E. PICCONE, Temperature excursion in thyristors due to short current pulses during forward conduction and reverse recovery phase, IAS, 1974.
 [20] :  [DATA051] IAS'72, IEEE, INDUSTRY APPLICATIONS SOCIETY, ANNUAL MEETING, 7TH, 1972.

 [21] : [SHEET237] I. SOMOS, D.E. PICCONE, Plasma spread in high-power thyristors under dynamic and static conditions, IEEE Trans Electron Devices, vol. ED-17, no. 9, Sept. 1970, pp. 680-687.
 [22] : [SHEET238] I. SOMOS, D.E. PICCONE, Some observations of static and dynamic plasma spread in conventional and new power thyristors., 1969, pp. 1-7.

  [1] : [SHEET196] R.G. RODRIGUES, D.E. PICCONE, W.H. TOBIN, L.W. WILLINGER, J.A. BARROW, T.A. HANSEN, J. ZHAO, L. CAO, Operation Of Power Semiconductors At Their Thermal Limit, 1998 IEEE IASociety Annual Meeting, October 12-15, 1998, 12 pages.
  [2] : [SHEET221] Turn-off characteristics of 1000 V SiC gate-turn-off thyristors, ISPSD'98.
  [3] : [SHEET229] D.E. PICCONE, I.S. SOMOS, Are you confused by high di/dt SCR ratings?, Electronic Engineer, Jan. 1969, vol. 28, no. 1, pp. 89-92.
  [4] : [SHEET216] Design and testing of high power, repetitively pulsed, solid-state closing switches
  [5] : [SHEET222] Demonstration of a 700 volt asymmetrical, 4H-SiC gate-turn-off thyristor (GTO), 1997.
  [6] : [SHEET215] D.E. PICCONE, R.W. DE DONCKER, J.A.BARROW, W.H. TOBIN, The MTO thyristor-a new high power bipolar MOS thyristor, Conference Record of the 1996 IEEE Industry Applications Conference, Thirty-First IAS Annual Meeting, IAS'96, October 1996, pp. 1472-1473.
  [7] : [SHEET220] L.O. ERIKSSON, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Selecting fuses for power semiconductor devices, IEEE Industry Applications Magazine, Volume 2, Issue 5, Sept.-Oct. 1996, pp. 19-23.
  [8] : [SHEET193] I.L. SOMOS, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Power Semiconductors-A New Method For Predicting The On-State Characteristic and Temperature Rise During Multi Cycle Fault Currents, conf.Rec.IEEE.IAS'93, vol. 2, pp.1242-1247.
  [9] : [SHEET214] Power semiconductor devices-examination of subcycle surge current ratings as needed for fuse selection
 [10] : [SHEET213] I.L. SOMOS, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Power semiconductors-a new method for predicting the on-state characteristic and temperature rise during multicycle fault currents, IEEE Transactions on Industry Applications,  Nov.-Dec. 1995, pp. 12

 [11] : [SHEET169] I.L. SOMOS, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Power semiconductors empirical diagrams expressing life as a function of temperature excursion, IEEE Transactions on Magnetics, jan. 1993, vol. 29, issue 1, part 2, pp. 517-522.
 [12] : [SHEET219] I.L. SOMOS, D.E. PICCONE, W.H. TOBIN, Two-dimensional heat flow in a GTO having a highly interdigitated emitter, 1989.
 [13] : [SHEET200] D.E. PICCONE, L.O. ERIKSSON, J. URBANEK, W.H. TOBIN, I.L. SOMOS, A thermal analogue of higher accuracy and factory test method for predicting and supporting thyristor fault suppression ratings, IAS 1988, vol. 14, pp. 678-686.
 [14] : [SHEET230] I.L. SOMOS, D.E. PICCONE, W.H. TOBIN, Plasma spreading loss in 100mm thyristors, PCIM magazine, june 1988.
 [15] : [SHEET242] So what's the story about validation? (MUMPS, standard computer language), 1988.
 [16] : [SHEET231] I.L. SOMOS, D.E. PICCONE, W.H. TOBIN, Plasma spreading in 6 KV, 100 mm diameter thyristors, IEEE Industry Applications Society Annual Meeting 1987, pp. 521-526.
 [17] : [SHEET233] POWER LOSS IN LARGE AREA THYRISTORS DESIGNED FOR 50/60 HZ PHASE CONTROL RECTIFIER CIRCUITS, 1981.
 [18] : [SHEET195] D.E. PICCONE, I.L. SOMOS, W.H. TOBIN, Piecewise Simulation (PS) Computation Method for Computing Transient Phenomena, IEEE-IAS Annual Meeting, September 1975, pp. 326-331.
 [19] : [SHEET241] FIELD CONTROLLED THYRISTOR (FCT)-A NEW ELECTRONIC COMPONENT, 1975.
 [20] : [SHEET227] Calculation of snubber circuits for two series-connected thyristors of unequal ecovery current, 1976.

 [21] : [SHEET240] FIELD TERMINATED DIODE, 1976
 [22] : [SHEET243] D.E. PICCONE, L.H. SPEROW, L.O. ERICKSSON, R.O. FULTON, Predicting the behavior of power semiconductors under fault conditions, IAS, 1972
 [23] : [SHEET205] D.E. PICCONE, I.L. SOMOS, Accelerated life tests for determining the life expectancy of thyristors due to di/dt failure modes, IEEE Industry Applications Society 1972 Conference Record, pp. 89-92.
 [24] : [SHEET244] Semiconductor rectifier assembly having high explosion rating, patent 1971.
 [25] : [SHEET237] I. SOMOS, D.E. PICCONE, Plasma spread in high-power thyristors under dynamic and static conditions, IEEE Trans Electron Devices, vol. ED-17, no. 9, Sept. 1970, pp. 680-687.
 [26] : [SHEET228] D.E. PICCONE, I. SOMOS, Double-triggering semiconductor controlled rectifier,  Patent Information USA 3440501 22 April 1969.
 [27] : [SHEET238] I. SOMOS, D.E. PICCONE, Some observations of static and dynamic plasma spread in conventional and new power thyristors., 1969, pp. 1-7.
 [28] : [SHEET229] D.E. PICCONE, I.S. SOMOS, Are you confused by high di/dt SCR ratings?, Electronic Engineer, Jan. 1969, vol. 28, no. 1, pp. 89-92.

Articles des années 1990 - 1999

  [1] : [SHEET196] R.G. RODRIGUES, D.E. PICCONE, W.H. TOBIN, L.W. WILLINGER, J.A. BARROW, T.A. HANSEN, J. ZHAO, L. CAO, Operation Of Power Semiconductors At Their Thermal Limit, 1998 IEEE IASociety Annual Meeting, October 12-15, 1998, 12 pages.
  [2] : [SHEET221] Turn-off characteristics of 1000 V SiC gate-turn-off thyristors, ISPSD'98.
  [3] : [SHEET239] 4H-SiC gate turn-off (GTO) thyristor development, 1997.
  [4] : [SHEET197] R. RODRIGUES, D.E. PICCONE, A. HUANG, R. De DONCKER, A Very High Voltage, Large Area MTOtm (MOS Turn Off Thyristor) for PEBB Applications, GOMAC '97, 10-13 March 1997, 12 pages.
  [5] : [SHEET198] R. RODRIGUES, D.E. PICCONE, A. HUANG, R. De DONCKER, MTOtm Thyristor Power Switches, Power Systems World ‘97, September 6-12, 1997, 12 pages.
  [6] : [SHEET216] Design and testing of high power, repetitively pulsed, solid-state closing switches
  [7] : [SHEET222] Demonstration of a 700 volt asymmetrical, 4H-SiC gate-turn-off thyristor (GTO), 1997.
  [8] : [SHEET215] D.E. PICCONE, R.W. DE DONCKER, J.A.BARROW, W.H. TOBIN, The MTO thyristor-a new high power bipolar MOS thyristor, Conference Record of the 1996 IEEE Industry Applications Conference, Thirty-First IAS Annual Meeting, IAS'96, October 1996, pp. 1472-1473.
  [9] : [SHEET220] L.O. ERIKSSON, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Selecting fuses for power semiconductor devices, IEEE Industry Applications Magazine, Volume 2, Issue 5, Sept.-Oct. 1996, pp. 19-23.
 [10] : [SHEET213] I.L. SOMOS, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Power semiconductors-a new method for predicting the on-state characteristic and temperature rise during multicycle fault currents, IEEE Transactions on Industry Applications,  Nov.-Dec. 1995, pp. 12
 [11] : [SHEET214] Power semiconductor devices-examination of subcycle surge current ratings as needed for fuse selection
 [12] : [SHEET169] I.L. SOMOS, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Power semiconductors empirical diagrams expressing life as a function of temperature excursion, IEEE Transactions on Magnetics, jan. 1993, vol. 29, issue 1, part 2, pp. 517-522.
 [13] : [SHEET193] I.L. SOMOS, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Power Semiconductors-A New Method For Predicting The On-State Characteristic and Temperature Rise During Multi Cycle Fault Currents, conf.Rec.IEEE.IAS'93, vol. 2, pp.1242-1247.

Articles des années 1980 - 1989

  [1] : [SHEET219] I.L. SOMOS, D.E. PICCONE, W.H. TOBIN, Two-dimensional heat flow in a GTO having a highly interdigitated emitter, 1989.
  [2] : [SHEET200] D.E. PICCONE, L.O. ERIKSSON, J. URBANEK, W.H. TOBIN, I.L. SOMOS, A thermal analogue of higher accuracy and factory test method for predicting and supporting thyristor fault suppression ratings, IAS 1988, vol. 14, pp. 678-686.
  [3] : [SHEET230] I.L. SOMOS, D.E. PICCONE, W.H. TOBIN, Plasma spreading loss in 100mm thyristors, PCIM magazine, june 1988.
  [4] : [SHEET242] So what's the story about validation? (MUMPS, standard computer language), 1988.
  [5] : [SHEET231] I.L. SOMOS, D.E. PICCONE, W.H. TOBIN, Plasma spreading in 6 KV, 100 mm diameter thyristors, IEEE Industry Applications Society Annual Meeting 1987, pp. 521-526.
  [6] : [SHEET204] I.L. SOMOS, L.O. ERIKSSON, W.H. TOBIN, Understanding di/dt ratings and life expectancy for thyristors, Power Conversion And Intelligent Motion, pp. 56-59, February 1986.
  [7] : [SHEET233] POWER LOSS IN LARGE AREA THYRISTORS DESIGNED FOR 50/60 HZ PHASE CONTROL RECTIFIER CIRCUITS, 1981.

Articles des années 1970 - 1979

  [1] : [SHEET227] Calculation of snubber circuits for two series-connected thyristors of unequal ecovery current, 1976.
  [2] : [SHEET240] FIELD TERMINATED DIODE, 1976
  [3] : [SHEET195] D.E. PICCONE, I.L. SOMOS, W.H. TOBIN, Piecewise Simulation (PS) Computation Method for Computing Transient Phenomena, IEEE-IAS Annual Meeting, September 1975, pp. 326-331.
  [4] : [SHEET241] FIELD CONTROLLED THYRISTOR (FCT)-A NEW ELECTRONIC COMPONENT, 1975.
  [5] : [SHEET235] I.L. SOMOS, D.E. PICCONE, Temperature excursion in thyristors due to short current pulses during forward conduction and reverse recovery phase, IAS, 1974.
  [6] : [SHEET205] D.E. PICCONE, I.L. SOMOS, Accelerated life tests for determining the life expectancy of thyristors due to di/dt failure modes, IEEE Industry Applications Society 1972 Conference Record, pp. 89-92.
  [7] : [SHEET243] D.E. PICCONE, L.H. SPEROW, L.O. ERICKSSON, R.O. FULTON, Predicting the behavior of power semiconductors under fault conditions, IAS, 1972
  [8] : [SHEET237] I. SOMOS, D.E. PICCONE, Plasma spread in high-power thyristors under dynamic and static conditions, IEEE Trans Electron Devices, vol. ED-17, no. 9, Sept. 1970, pp. 680-687.

Articles des années 1960 - 1969

  [1] : [SHEET229] D.E. PICCONE, I.S. SOMOS, Are you confused by high di/dt SCR ratings?, Electronic Engineer, Jan. 1969, vol. 28, no. 1, pp. 89-92.
  [2] : [SHEET238] I. SOMOS, D.E. PICCONE, Some observations of static and dynamic plasma spread in conventional and new power thyristors., 1969, pp. 1-7.
  [3] : [SHEET244] Semiconductor rectifier assembly having high explosion rating, patent 1971.
  [4] : [SHEET201] I. SOMOS, D.E. PICCONE, Behavior of thyristos under transient conditions, Proceedings of the IEEE, vol. 55, no. 8, august 1967, pp. 1306-1311.
  [5] : [SHEET228] D.E. PICCONE, I. SOMOS, Double-triggering semiconductor controlled rectifier,  Patent Information USA 3440501 22 April 1969.

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