D.E. PICCONE, R.W. DE DONCKER, J.A.BARROW, W.H. TOBIN, "The MTO thyristor-a new high power bipolar MOS thyristor", Conference Record of the 1996 IEEE Industry Applications Conference, Thirty-First IAS Annual Meeting, IAS'96, October 1996, pp. 1472-1473.

D.E. PICCONE, R.W. DE DONCKER, J.A.BARROW, W.H. TOBIN, "The MTO thyristor-a new high power bipolar MOS thyristor", Conference Record of the 1996 IEEE Industry Applications Conference, Thirty-First IAS Annual Meeting, IAS'96, October 1996, pp. 1472-1473. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [SHEET215]

Titre : D.E. PICCONE, R.W. DE DONCKER, J.A.BARROW, W.H. TOBIN, The MTO thyristor-a new high power bipolar MOS thyristor, Conference Record of the 1996 IEEE Industry Applications Conference, Thirty-First IAS Annual Meeting, IAS'96, October 1996, pp. 1472-1473.

Cité dans : [DATA043] Silicon Power, Technical papers, mars 2000.

Auteur : Piccone, D.E.
Auteur : De Doncker, R.W.
Auteur : Barrow, J.A.
Auteur : Tobin, W.H. - Silicon Power Corp., Malvern, PA, USA

Source : Industry Applications Conference, 1996. Thirty-First IAS Annual Meeting, IAS '96., Conference Record of the 1996 IEEE
Pages : 1472 - 1473 vol.3
Date : 6-10 Oct. 1996
ISBN : 0-7803-3544-9
Info : IEEE Catalog Number: 96CH25977, Total Pages: 4 vol. xxxiv+2583
References : 2
Accession_Number : 5507609
Stockage : Thierry LEQUEU
Lien : private/PICCONE1.pdf - 156 Ko.

Abstract :
A new high power bipolar MOS thyristor, the MTO/sup TM/
thyristor, is a latching device which extends the limited
capabilities of the MCT and IGBT to higher power and blocking
voltage. The MTO thyristor plan fits well, beginning at a
blocking voltage level where the other bipolar MOS devices are
believed to have a ceiling of diminishing returns, that is above
3000 V. The MTO thyristor is easily accommodated to the
conventional disk-type package for double sided cooling and
permits design voltage opportunity to that achieved for
thyristors, e.g., 9000 V. Feasibility of concept has been
established and development for specific designs is well
underway.

Subjet_terms :
MOS-controlled thyristors; MTO thyristor; high power bipolar MOS
thyristor; latching device; blocking voltage level; disk-type
package; double sided cooling; design voltage; development;
designs; concept feasibility; 9 kV

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