R. RODRIGUES, D.E. PICCONE, A. HUANG, R. De DONCKER, "MTOtm Thyristor Power Switches", Power Systems World ‘97, September 6-12, 1997, 12 pages.

R. RODRIGUES, D.E. PICCONE, A. HUANG, R. De DONCKER, "MTOtm Thyristor Power Switches", Power Systems World ‘97, September 6-12, 1997, 12 pages. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [SHEET198]

Titre : R. RODRIGUES, D.E. PICCONE, A. HUANG, R. De DONCKER, MTOtm Thyristor Power Switches, Power Systems World ‘97, September 6-12, 1997, 12 pages.

Cité dans : [DATA043] Silicon Power, Technical papers, mars 2000.
Cité dans : [DATA042] Recherche sur l'auteur Istvan SOMOS, mars 2000.

Auetur : Rogério Rodrigues (a)
Auteur : Dante Piccone (a)
Auteur : Alex Huang (a)
Auteur : Rik De Doncker (b)
Silicon Power Corporation (SPCO)
(a) Virginia Power Electronics Center of Virginia Polytechnic Institute and State University
(b) Formerly with SPCO, presently with ISEA, RWTH, Aachen, Germany

Info : Power Systems World ‘97, Baltimore Convention Center, Baltimore, Maryland
Date : September 6-12, 1997
Info : Chapter 3.4
Pages : 0 12
Stockage : Thierry LEQUEU
Lien : private/RODRIGUES3.pdf - 193 Ko.

Abstract :
The MTOtm (MOS Turn Off )Thyristor, a replacement for the GTO (Gate Turn Off Thyristor), is a
MOSFET-GTO hybrid for power conversion in the 1 to 20 MVA range. The MTO thyristor is
significantly more efficient than the GTO by requiring a drastically smaller gate drive while
simultaneously reducing storage time, thus providing improved performance and reduction of system
costs. Other power bipolar-MOS devices are believed to have a ceiling of blocking voltage at about
3kV, but the design rules for voltage blocking applicable to the MTO thyristor are similar to those
used for other thyristors that presently achieve 9kV. In addition, the MTO thyristor easily lends
itself to conventional double-side-cooled packaging. This paper describes the concept of the MTO
thyristor, presents results of measurements made on experimental 4.5kV and 6kV devices and interprets
these with the help of numerical simulations, reports on the current status of development, and
discusses specifications of MTO thyristor models currently offered.

References : 6
[1] D. Piccone, J. Barrow, W. Tobin, and R. De Doncker, "MTO - A MOS Turn-Off Disc-Type Thyristor for High Voltage Power Conversion", Proceedings of the IEEE’s Industrial Applications Society Meeting, Orlando, FL, 1995.
[2] R. Rodrigues, D. Piccone, A. Huang, and R. De Doncker, "A Very High Voltage, Large Area MTOtm(MOS Turn Off Thyristor) for PEBB Applications", Government Microcircuit Applications Conference, GOMAC, 10-13 March 1997, Riviera Hotel, Las Vegas, Nevada (Session 13), Digest of Papers, pp. 437-440.
[3] Baliga, B. J., "Modern Power Devices", Krieger Publ. Co., Malabar, Florida, 1992.
[4] Temple, V. A. K., "MOS Controlled thyristors", IEEE International Electron Devices Meeting Conference Digest, Abstract 10.7, pp. 282-285 (1984).
[5] Silvaco International, Inc., Santa Clara, CA.
[6] Technology Modeling Associates, Inc., Sunnyvale. CA.

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