E. PROFUMO, A. TENCONI, S. FACELLI, B. PASSERINI, A. GUERRA, "An Experimentally Validated Transient Thermal Impedance Model for High Power Diodes and Thyristors", EPE Journal, Volume 9, N° 3/4, january 2000, pp. 11-16.

E. PROFUMO, A. TENCONI, S. FACELLI, B. PASSERINI, A. GUERRA, "An Experimentally Validated Transient Thermal Impedance Model for High Power Diodes and Thyristors", EPE Journal, Volume 9, N° 3/4, january 2000, pp. 11-16. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [SHEET192]

Titre : E. PROFUMO, A. TENCONI, S. FACELLI, B. PASSERINI, A. GUERRA, An Experimentally Validated Transient Thermal Impedance Model for High Power Diodes and Thyristors, EPE Journal, Volume 9, N° 3/4, january 2000, pp. 11-16.

Cité dans :[REVUE114] EPE Journal, European Power Electronics and Drives, Volume 9, N° 3/4, january 1999.

Auteur : E. Profumo (1)
Auteur : A. Tenconi (1)
Auteur : S. Facelli (2)
Auteur : B. Passerini (2)
Auteur : A. Guerra (3)
(1) Dipartimento di Ingegneria Elettrica Industriale, Politecnico di Torino, Italy
(2) Green Power Semiconductors, Italy
(3) International Rectifier Corporation Italiana, Italy

Source : EPE Journal, Volume 9, N° 3/4
Date : january 2000
Pages : 11 - 16
Stockage : Thierry LEQUEU

Abstract :
In this paper a thermal model that allows to obtain the transient thermal impedance cuwe of high
power diodes and thyristors is presented. The results obtainedfrom the model are compared with the
experimental measurements performed on the most diffused families of device packages. In the last
section of the paper, a method for predicting the transient junction temperature by using PSPICE is
outlined. The method is based on the fitting of the transient thermal impedance curve with a finite
series of exponential terms.

References : 6
[1] : I.L. Somos, D.E. Piccone, L.J. Willinger, W.H. Tobin, "Power Semiconductors-A New Method For Predicting The On-State Characteristic and Temperature Rise During Multi Cycle Fault Currents", Conf.Rec.IEEE.IAS'93, vol. 2 pp.1242-1247.
[2] : J.W.Motto Jr, W.H. Karstaedt, J.M.Sherbondy, S.G. Leslie, "Thyristor (Diode) Transient Thermal Impedance Modeling Including the Spatial Temperature Distribution During Surge and Overload Conditions", Conf.Rec.IEEE.IAS'95, vo1.2 pp.959-966.
[3] : K.H. Sueker, "Transient Thermal Impedance Modeling of Semiconductor Heat Sinking", Conf.Rec.IEEE.IAS'93, vol. 2. pp.1238-1241.
[4] : J.W Motto Jr., "Thyristor (Diode) Transient Thermal Impedance Modeling and Verification for Inductive Load Applications", Conf.Rec.IEEE.IAS'94 vo1.2 pp. 1277-1283.
[5] : William H. Press, William T Wetterling, Saul A. Teukolsky, Brian P. Flannery, "Numerical Recipes in Fortran The Art of Scientific Computing", Book, Cambridge university press.
[6] : PE. Bagnoli, C. Casarosa, E. Dallago, F. Perotti, M. Bezza, A. Maierna, "Thermal Resistance Analysis by Induced Transient in Electronic Packaging", Conf.Rec.IHSM'W, pp. 200-208.

  [1] : [SHEET193] I.L. SOMOS, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Power Semiconductors-A New Method For Predicting The On-State Characteristic and Temperature Rise During Multi Cycle Fault Currents, conf.Rec.IEEE.IAS'93, vol. 2, pp.1242-1247.
  [2] :  [PAP158]  -------
  [3] :  [PAP158]  -------
  [4] :  [PAP158]  -------
  [5] :  [PAP158]  -------
  [6] :  [PAP158]  -------

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