R.G. RODRIGUES, D.E. PICCONE, W.H. TOBIN, L.W. WILLINGER, J.A. BARROW, T.A. HANSEN, J. ZHAO, L. CAO, "Operation Of Power Semiconductors At Their Thermal Limit", 1998 IEEE IASociety Annual Meeting, October 12-15, 1998, 12 pages.
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Titre : R.G. RODRIGUES, D.E. PICCONE, W.H. TOBIN, L.W. WILLINGER, J.A. BARROW, T.A. HANSEN, J. ZHAO, L. CAO, Operation Of Power Semiconductors At Their Thermal Limit, 1998 IEEE IASociety Annual Meeting, October 12-15, 1998, 12 pages.
Cité dans : [DATA043] Silicon Power, Technical papers, mars 2000.
Cité dans : [DATA042] Recherche sur l'auteur Istvan SOMOS, mars 2000.
Cité dans : [DIV398] Les revues IEEE Transactions on Industry Applications et IEEE Industry Applications Society - IAS, novembre 2005.
Cité dans :[PAP370]
Auteur : R.G. Rodrigues
Auteur : D.E. Piccone
Auteur : W.H. Tobin
Auteur : L.W. Willinger
Auteur : J.A. Barrow
Auteur : T.A. Hansen, Silicon Power Corporation, 175 Great Valley Parkway Malvern, PA 19355-1321, U.S.A.
Auteur : J. Zhao
Auteur : L. Cao, Rutgers University, Dep. of Electrical and Computer Eng. Piscataway, NJ 08855-0909, U.S.A.
Source : 1998 IEEE Industry Applications Society Annual Meeting St. Louis, Missouri, USA
Date : October 12-15, 1998
Pages : 1 12
Stockage : Thierry LEQUEU
Lien : private/RODRIGUES1.pdf - 203 Ko, 12 pages.
Lien : private/RODRIGUES1B.pdf - 944 Ko, 12 pages.
Abstract :
Based on experience gained with Si power devices, a review is presented of some of the thermal
limitations to the operation of power semiconductor devices, which are encountered in steady state
operation, but also, much more stringently, under switching and pulse power transients.
Devices based on SiC are expected to be capable of steady-state operation at much higher temperature
than Si devices. Here we discuss predictable failure mechanisms of SiC devices at the extremely high
temperatures reached under surge conditions, and their life expectancy under thermal cycling
operation.
References : 38
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[1] : [SHEET213] I.L. SOMOS, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Power semiconductors-a new method for predicting the on-state characteristic and temperature rise during multicycle fault currents, IEEE Transactions on Industry Applications, Nov.-Dec. 1995, pp. 12
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[5] : [PAP158] -------
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[8] : [PAP158] -------
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[17] : [SHEET204] I.L. SOMOS, L.O. ERIKSSON, W.H. TOBIN, Understanding di/dt ratings and life expectancy for thyristors, Power Conversion And Intelligent Motion, pp. 56-59, February 1986.
[18] : [SHEET269] J.K. CHESTER, A new technique for deriving self-consistent electrical and thermal models of thyristors during surge loops and from experimental data, IEE (UK), Conference Publication 154, Power Electronics-Power Semiconductors, September 1979.
[19] : [SHEET200] D.E. PICCONE, L.O. ERIKSSON, J. URBANEK, W.H. TOBIN, I.L. SOMOS, A thermal analogue of higher accuracy and factory test method for predicting and supporting thyristor fault suppression ratings, IAS 1988, vol. 14, pp. 678-686.
[20] : [SHEET213] I.L. SOMOS, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Power semiconductors-a new method for predicting the on-state characteristic and temperature rise during multicycle fault currents, IEEE Transactions on Industry Applications, Nov.-Dec. 1995, pp. 12
[21] : [PAP158] -------
[22] : [PAP158] -------
[23] : [PAP158] -------
[24] : [SHEET237] I. SOMOS, D.E. PICCONE, Plasma spread in high-power thyristors under dynamic and static conditions, IEEE Trans Electron Devices, vol. ED-17, no. 9, Sept. 1970, pp. 680-687.
[25] : [SHEET270] A. HERLET, P. VOSS, State of the art in power semiconductors, IEEE / IAS International Semic0nductor Power Conversion Conference Record, 1997.
[26] : [SHEET230] I.L. SOMOS, D.E. PICCONE, W.H. TOBIN, Plasma spreading loss in 100mm thyristors, PCIM magazine, june 1988.
[27] : [SHEET235] I.L. SOMOS, D.E. PICCONE, Temperature excursion in thyristors due to short current pulses during forward conduction and reverse recovery phase, IAS, 1974.
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[29] : [PAP158] -------
[30] : [SHEET214] Power semiconductor devices-examination of subcycle surge current ratings as needed for fuse selection
[31] : [PAP158] -------
[32] : [PAP158] -------
[33] : [PAP158] -------
[34] : [PAP158] -------
[35] : [PAP158] -------
[36] : [PAP158] -------
[37] : [PAP158] -------
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