Fiche : [DATA050]

Titre : Recherche sur l'auteur S. JANUSZEWSKI

Cité dans : [DIV096]  Recherches bibliographiques diverses, janvier 2019.

Vers : Recherche LMP Catagne du 16 mars 2000
Vers : Recherche STN Easy du 16 mars 2000
Vers : Ajout de mars 2000

Recherche LMP Catagne du 16 mars 2000

  [1] : [SHEET223] E. Vasilyeva, D. Januszewski, M. Leonowicz, Mechanically alloyed Sm-Fe-N magnets with addition of Ga, IEEE Transactions on Magnetics, 1997, pp. 3853-3855.

  [1] : [SHEET224] Application Of Shock Compression Technique For Consolidation Of Hard Magnetic Powders3? 1998
  [2] : [SHEET225] E. Vasilyeva, D. Januszewski, M. Leonowicz, Mechanically Alloyed Sm-Fe-N Magnets With Addition Of Ga, INTERMAG '97.
  [3] : [SHEET226] Consequences of internal short-circuits in very high power converters, 1996.

Recherche STN Easy du 16 mars 2000

  [1] : [SHEET245] S. JANUSZEWSKI, M. KOCISZEWSKA-SZCZERBIK, H. SWIATEK, Some observation dealing with the failures of IGBT transistors in high power converters, Microelectronics and Reliability, vol. 38, no. 6-8, Jun-Aug 1998, pp. 1325-1330.
  [2] : [SHEET226] Consequences of internal short-circuits in very high power converters, 1996.
  [3] : [SHEET246] S. JANUSZEWSKI, Non-destructive method for determination of overload capacity of high power semiconductor devices, 1982
  [4] : [SHEET247] Influence of Thyristors on Modern Technology, 1975.
  [5] : [SHEET248] Effect of Gate Polarization on the Switch-Off Current in Thyristors, 1973.
  [6] : [SHEET249] Tests of the Critical Rate of Rise of Voltages in Symmetric Thyristors, 1972.

  [1] : [SHEET250] S. JANUSZEWSKI, H. SWIATEK, K. ZYMMER, Some experiences concerning of a starting and service of high power IGBT converters, EPE'97, vol. 3, pp.103-108.
  [2] : [SHEET155] S. JANUSZEWSKI, M. KOCISZEWSKA-SZCZERBIK, H. SWIATEK, G. SWIATEK, Semiconductor device failures in power converter service conditions, EPE Journal, Dec. 1998, vol. 7, no. 3-4, pp. 12-17.
  [3] : [SHEET242] So what's the story about validation? (MUMPS, standard computer language), 1988.
  [4] : [SHEET253] Some problems dealing with the use of GTO thyristors in high power converters, 1998.
  [5] : [SHEET245] S. JANUSZEWSKI, M. KOCISZEWSKA-SZCZERBIK, H. SWIATEK, Some observation dealing with the failures of IGBT transistors in high power converters, Microelectronics and Reliability, vol. 38, no. 6-8, Jun-Aug 1998, pp. 1325-1330.
  [6] : [SHEET254] S. JANUSZEWSKI, M. KOCISZEWSKA-SZCZERBIK, H. SWIATEK, K. ZYMMER, IGBT transistor failures in high power converters, ISPS '96 Proceedings, 11-13 Sept 1996, pp. 177-184.
  [7] : [SHEET255] S. JANUSZEWSKI, M. KOCISZEWSKA-SZCZERBIK, H. SWIATEK, Causes and mechanisms of semiconductor device failures in power converter service conditions, 1995.
  [8] : [SHEET226] Consequences of internal short-circuits in very high power converters, 1996.
  [9] : [SHEET257] S. JANUSZEWSKI, M. KOCISZEWSKA-SZCZERBIK, Semiconductor power devices failures in converter circuits, 1993.
 [10] : [SHEET258] S. JANUSZEWSKI, Discrete semiconductor devices and power integrated circuits used in power electronics equipments, 1993.

 [11] : [SHEET259] Influence of short-circuit currents on the operation of very high power converter equipments, 1993.
 [12] : [SHEET260] Load capacity of power thyristors at high current intensities, 1992.
 [13] : [SHEET261] Expert systems for power electronics, 1991.
 [14] : [SHEET262] Power electronics-technology of the future, 1991.
 [15] : [SHEET263] 25 years of service of automatic mobile rectifier substation in the Polish mining industry, 1990.
 [16] : [SHEET264] High power semiconductor equipment, 1981 !
 [17] : [SHEET265] Effect of initial biasing of gate on electrical properties of thyristors, 1974.
 [18] : [SHEET266] Study on conditions of regaining valve properties by thyristors, 1974.
 [19] :  [PAP158]  -------
 [20] : [SHEET256] Voltage and current steepnesses in thyristors, 1973.

 [21] : [SHEET251] Switching phenomena in thyristors, 1973.
 [22] :  [PAP158]  -------
 [23] :  [PAP158]  -------
 [24] : [SHEET236] Recovery charge in silicon diodes and thyristor, 1972.
 [25] : [SHEET234] The influence of the gate polarisation on the circuit commutated recovery time and critical rate of rise of off-state voltage of thyristors, 1972.

Ajout de mars 2000

  [1] : [SHEET278] S. JANUSZEWSKI, M. KOCISZEWSKA-SZCZERBIK, Failure physics of high power thyristors (in Polish), Prace Przemyslowego Instytutu Elektroniki, No.115, 1991
  [2] : [SHEET257] S. JANUSZEWSKI, M. KOCISZEWSKA-SZCZERBIK, Semiconductor power devices failures in converter circuits, 1993.
  [3] : [SHEET280] S. JANUSZEWSKI, M. KOCISZEWSKA-SZCZERBIK, H. SWIATEK, Failure mechanisms of power MOSFET transistors, Proc. of the XIII Symposium phenomena in non-linear circuits, Poznañ (Poland), May 1994, pp. 207-212.
  [4] : [SHEET281] S. JANUSZEWSKI, M. KOCISZEWSKA-SZCZERBIK, H. SWIATEK, Thyristor service in variable current load conditions (in Polish), Wiadomoaeci Elektrotechniczne, No. 10, 1994.
  [5] : [SHEET282] S. JANUSZEWSKI, M. KOCISZEWSKA-SZCZERBIK, E. STYPULKOWSKA, H. SWIATEK, G. SWIATEK, New generation semiconductor device failures in power electronics equipment, International Conference and Exhibition on Power Electronics, Motion Control and Associated A
  [6] : [SHEET283] S. JANUSZEWSKI, H. SWIATEK, Modern semiconductor devices in power electronics (in Polish), WNT, Warszawa 1994.
  [7] : [SHEET284] S. JANUSZEWSKI, M. KOCISZEWSKA-SZCZERBIK, E. STYPULKOWSKA, H. SWIATEK, G. SWIATEK, Investigation of destroyed parts of surface of high power semiconductor devices in service conditions, Proceedings of the 6th European Symposium Reliability of Electron D
  [8] : [SHEET255] S. JANUSZEWSKI, M. KOCISZEWSKA-SZCZERBIK, H. SWIATEK, Causes and mechanisms of semiconductor device failures in power converter service conditions, 1995.
  [9] : [SHEET286] S. JANUSZEWSKI, H. SWIATEK, Power semiconductor device measurements (in Polish), WKiL, Warszawa 1996.

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