Article : [SHEET119]
Titre : G. COQUERY, R. LALLEMAND, D. WAGNER, M. PITON, H. BERG, K. SOMMER, Reliability improvement of the soldering thermal fatigue with AlSiC technology on traction high power IGBT modules, EPE'99, paper 904, 1999.
Cité dans : [DATA146] LTN, Laboratoire des Technologies Nouvelles, INRETS, Arcueil, France. Cité dans : [DATA035] Recherche sur les mots clés thermal + fatigue + semiconductor et reliability + thermal + cycle, mars 2004. Cité dans :[99DIV076] EPE'99, European Conference on Power Electronics and Applications, Lausanne, Suisse, 7-9 septembre 1999. Cité dans :[DATA042] Cité dans :[DATA049] Cité dans :[ART185]Auteur : G. Coquery
Auteur : D. Wagner
Auteur : M. Piton
ALSTOM F-65600 Séméac, France, tel: +33-5-6253 4863, fax: +33-5-6253 4805
Lien : mailto:michel.piton@transport.alstom.com
Lien : mailto:diane.wagner@transport.alstom.com
Auteur : H. Berg,
Auteur : K. Sommer
EUPEC D-59581 Warstein, Germany, Tel : +49-2902 764 400, Fax : +49-2902 764 256
Lien : mailto:hermann.berg@eupec.com
Lien : mailto:karlheinz.sommer@eupec.com
Stockage : Thierry LEQUEU
Lien : private/PP904.pdf - 754 Ko, 10 pages.
Date : 7-9 septembre 1999
Pages : 1 - 10
Keywords : IGBT module, high power, reliability soldering layer, thermal resistance, AlSiC
Lien : ART185.HTM#Bibliographie - référence [7].
Abstract :
Since 1994, the technology of the high power IGBT modules for traction inverter was improved a lot.
The first technology weakness identified was the bonding attach reliability. The second failure mode
is the cracking of the solder layer between base plate material and ceramic plate. The topic proposed
concerns the power cycling behaviour of the packaging technology using new base plate material named
AlSiC, to replace the usual copper base plate The results of the first accelerated tests show a high
improvement, the lifetime before critical solder layer delamination is increased by a factor of six
to ten, according to our test results Tests conditions, methodology of measurement mainly considering
thermal resistance interpretation, thermal simulation, and failures analysis are discussed.
Bibliographie |
[1] : [SHEET200] D.E. PICCONE, L.O. ERIKSSON, J. URBANEK, W.H. TOBIN, I.L. SOMOS, A thermal analogue of higher accuracy and factory test method for predicting and supporting thyristor fault suppression ratings, IAS 1988, vol. 14, pp. 678-686. [2] : [SHEET356] A. HAMIDI, G. COQUERY, R. LALLEMAND, Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, [3] : [SHEET120] A. HAMIDI, G. COQUERY, R. LALLEMAND, P. VALES, J.M. DORKEL, Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applications, ESREF'98, Reliability of Power Devices, Copenhague, 9 [4] : [ART221] K. SOMMER, J. GOTTERT, G. LEFRANC, R. SPANKE, Multi-chip high-power IGBT modules for traction and industrial application, Proc. EPE' 97, Trondheim, Norway, September 22-24, pp. 512-515. [5] : [SHEET357] G. COQUERY, Les modules IGBT de forte puissance. Leur essor dans les applications de traction ferroviaire, REE no. 9, pp. 52-59, Octobre 1998, Paris. [6] : [PAP405] T. FRANKE, M. HONSBERG-RIEDL, P. SIMON, J. OTTO, S. RAMMINGER, G. SOELKNER, E. WOLFGANG, On-Chip Reliability Investigations on Power Modules Actually Working in Inverter Systems, Microelectronics Reliability, Volume 38, Issues 6-8, 8 June 1998, pp. 1361 [7] : [PAP158] ------- [8] : [PAP158] ------- [9] : [SHEET122] A. HAMIDI, G. COQUERY, R. LALLEMAND, Reliability of high power IGBT modules. Testing on thermal fatigue effects due to traction cycles, Proc. of EPE Conf., Trondheim, September 1997, vol. 3, pp. 3.118-3.123. [10] : [PAP158] ------- [11] : [ART223] E. HERR, T. FREY, R. SCHLEGEL, A. STUCK, R. ZEHRINGER, Substrate to base solder joint reliability in high-power IGBT modules, Microelectron. Reliab. Vol. 37, 1997, pp. 1719-1722. [12] : [SHEET354] P. JACOB, M. HELD, P. SCACCO, W. WU, Reliability testing and analysis of IGBT power semiconductor modules, IEE proc. IGBT propulsion drives, London, pp. 4.1-4.5, 1995. [13] : [SHEET358] T. SCHUTZE, H. BERG, M. HIERHOLZER, Further improvements in the reliability of IGBT Modules, Proc. of IAS, 1998.
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