S. JANUSZEWSKI, M. KOCISZEWSKA-SZCZERBIK, H. SWIATEK, "Some observation dealing with the failures of IGBT transistors in high power converters", Microelectronics and Reliability, vol. 38, no. 6-8, Jun-Aug 1998, pp. 1325-1330.
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Info : COMPENDEX Answer Number 1, le 16/03/2000.

Titre : S. JANUSZEWSKI, M. KOCISZEWSKA-SZCZERBIK, H. SWIATEK, Some observation dealing with the failures of IGBT transistors in high power converters, Microelectronics and Reliability, vol. 38, no. 6-8, Jun-Aug 1998, pp. 1325-1330.

Cité dans : [CONF016] ESREF, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis et Microelectronics and Reliability, décembre 2005.
Cité dans : [DATA050] Recherche sur l'auteur S. JANUSZEWSKI
Cité dans :[REVUE253] Elsevier Science, Microelectronics Reliability, Volume 38, Issues 6-8, Pages 851-1366, 8 June 1998.
Auteur : Januszewski, S. (Electrotechnical Inst, Warszawa, Pol)
Auteur : Kociszewska-Szczerbik, M.
Auteur : Swiatek, H

Source : Microelectronics and Reliability
Volume : 38
Numéro : 6-8
Date : Jun-Aug 1998.
Pages : 1325 - 1330
CODEN : MCRLAS
ISSN : 0026-2714
Année : 1998
Document_Type : Journal
Treatment_Code : General Review
Language : English
Stockage : Thierry LEQUEU
Lien : private/JANUS2.pdf - 496 Ko, 6 pages.

Abstract :
The explosion strength of high power IGBT modules is one of the
important parameters that may decide on converter equipment reliability in
extreme circumstances.The explosion strength of a device is represented by
the peak value of the collector current (so called `peak case nonrupture
current') that cannot be exceeded. Some main IGBT failure mechanisms under
service conditions are discussed.Test methods and experimental results on
device case explosion strength are presented.Experiences concerning
starting, tests and service of high IGBT converters are given.Preliminary
load tests with rapidly changing current values are useful for newly
fabricated IGBT converters.(Author abstract)

Accession_Number : 1999(4):1230

Références : 9 Refs.

  [1] :  [PAP158]  -------
  [2] : [SHEET121] G. COQUERY, R. LALLEMAND, D. WAGNER, P. GIBARD, Reliability of the 400 A IGBT modules for traction converters. Contribution on the power thermal fatigue influence on life expancy, EPE'95, vol. 1, pp. 60-65.
  [3] :  [PAP158]  -------
  [4] : [SHEET284] S. JANUSZEWSKI, M. KOCISZEWSKA-SZCZERBIK, E. STYPULKOWSKA, H. SWIATEK, G. SWIATEK, Investigation of destroyed parts of surface of high power semiconductor devices in service conditions, Proceedings of the 6th European Symposium Reliability of Electron D
  [5] : [SHEET254] S. JANUSZEWSKI, M. KOCISZEWSKA-SZCZERBIK, H. SWIATEK, K. ZYMMER, IGBT transistor failures in high power converters, ISPS '96 Proceedings, 11-13 Sept 1996, pp. 177-184.
  [6] : [SHEET250] S. JANUSZEWSKI, H. SWIATEK, K. ZYMMER, Some experiences concerning of a starting and service of high power IGBT converters, EPE'97, vol. 3, pp.103-108.
  [7] :  [PAP158]  -------
  [8] : [SHEET291] Y. TAKAHASHI, K. YOSHIKAWA, M. SOUTOME, T. FUJII, M. ICHIJYOU, M.Y. SEKI, 2.5 kV-1000 A power pack IGBT (high power flat-packaged RC-IGBT)
  [9] : [SHEET292] W. WU, M. HELD, P. JACOB, P. SCACCO, A. BIROLINI, Thermal stress related packaging failure in power IGBT modules, ISPSD'95.

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