Article : [SHEET226]

Titre : Consequences of internal short-circuits in very high power converters, 1996.

Cité dans : [DATA050] Recherche sur l'auteur S. JANUSZEWSKI

Source : Industrial Electronics, 1996. ISIE '96., Proceedings of the IEEE International Symposium on
Page : 519 - 524
Volume : 1
Date : 17-20 June 1996
ISBN : 0-7803-3334-9
Info : IEEE Catalog Number: 96TH8192, Total Pages: 2 vol. 1075
Lien : private/JANUS1.pdf - 675 Ko.
Stockage : Thierry LEQUEU

Abstract :
As a rule, very high power converters are custom designed. One of
the most important problems is a phenomenon of high current flow
during internal short circuits caused by semiconductor device
breakdown. This situation may result in device package explosion
and other damage caused by the destructive action of
electrodynamic forces. The proposal of fast fuses elimination,
commonly used as short-circuit protection, requires the
determination of device explosion strength characteristics (peak
value of case destroying current vs. time). Then it is necessary
to design such a level of the converter load that the device
current will not exceed the admissible value before the tripping
of the AC supply circuit-breaker. In the paper, overcurrent
protection methods are analysed. Some experiences and test
results in this field are given. The mechanisms of destruction of
power semiconductor devices caused by very high short-circuit
currents are discussed. In conclusion, guidelines for the design
of power electronic equipment without fast semiconductor fuse
overcurrent protection are given.

Subjet_terms :
power convertors; power converters; internal short-circuits;
current flow; semiconductor device breakdown; device package
damage; fast fuses elimination; overcurrent protection methods;
device explosion strength characteristics; AC supply
circuit-breaker; experiences; test results; design guidelines

Source : ISIE '96. Proceedings of the IEEE International Symposium on Industrial Electronics (Cat. No.96TH8192) New York, NY, USA: IEEE, 1996.
Pages : 519 - 524
Volume : 1 of 2 vol. 1075 pp.
Rererences : 12 refs.
Conference : Warsaw, Poland, 17-20 June 1996
Sponsor(s) :
IEEE Ind. Electron. Soc.
Warsaw Univ. Technol.
IEEE Power Electron. Soc.
IEEE Ind. Application Soc.
IEEE Poland Joint Chapter on Ind. Electron. Soc.
Polish Acad. Sci.
Polish Soc. Theoretical & Applied Electr. Eng.
Ministr. Nat. Educ.
Silicon Poland - Warszawa
Price : CCCC 0 7803 3334 9/96/$5.00
ISBN : 0-7803-3334-9
Document_Type : Conference Article
Treatment_Code : Practical
Info : Country of Publication : United States
Language : English
Stockage :

Abstract :
As a rule, very high power converters are custom designed. One of the
most important problems is a phenomenon of high current flow during
internal short circuits caused by semiconductor device breakdown. This
situation may result in device package explosion and other damage caused
by the destructive action of electrodynamic forces. The proposal of fast
fuses elimination, commonly used as short-circuit protection, requires the
determination of device explosion strength characteristics (peak value of
case destroying current vs. time). Then it is necessary to design such a
level of the converter load that the device current will not exceed the
admissible value before the tripping of the AC supply circuit-breaker. In
the paper, overcurrent protection methods are analysed. Some experiences
and test results in this field are given. The mechanisms of destruction of
power semiconductor devices caused by very high short-circuit currents are
discussed. In conclusion, guidelines for the design of power electronic
equipment without fast semiconductor fuse overcurrent protection are
given.

Accession_Number : 1996:5442897
References : 12
Accession_Number : 5442897

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