Revue : [REVUE253]

Titre : Elsevier Science, Microelectronics Reliability, Volume 38, Issues 6-8, Pages 851-1366, 8 June 1998.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.
Cité dans : [DATA233] ESREF'98, Proceedings of the 9th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, 5-9 October 1998.

Volume : 38
Issues : 6-8
Pages : 851-1366
Date : 8 June 1998

[1] : Full-Chip Reliability Analysis, Pages 851-859
David Overhauser, J. R. Lloyd, Steffen Rochel, Gregory Steele and Syed
Zakir Hussain
Lien : private/OVERHAUSER.pdf - | Journal Format-PDF (654 K)

[2] : An analysis of the quality and reliability supplement to the SIA Roadmap,
Pages : 861-868
Robert W. Thomas
Lien : vide.pdf - | Journal Format-PDF (454 K)

[3] : The use of the Focused Ion Beam in failure analysis, Pages 869-876
D. Verkleij
Lien : vide.pdf - | Journal Format-PDF (494 K)

[4] : Analysis of Iddq failures by spectral photon emission microscopy, Pages
877-882
M. Rasras, I. De Wolf, H. Bender, G. Groeseneken, H. E. Maes, S.
Vanhaeverbeke and P. De Pauw
Lien : vide.pdf - | Journal Format-PDF (428 K)

[5] : Near-field-optical-probe induced resistance-change-detection (NF-OBIRCH)
method for identifying defects in Al and TiSi interconnects, Pages 883-888
K. Nikawa, T. Saiki, S. Inoue and M. Ohtsu
Lien : vide.pdf - | Journal Format-PDF (346 K)

[6] : A new adaptive amplifier for biased electron beam induced current
applications, Pages 889-893
M. Ciappa, P. Malberti, P. Furcas and M. Vanzi
Lien : vide.pdf - | Journal Format-PDF (346 K)

[7] : Detailed Investigation of SEM-results by TEM at one Sample Using
FIB-technique, Pages 895-899
U. Mühle, A. Wiesner and S. Schray
Lien : vide.pdf - | Journal Format-PDF (470 K)

[8] : Induced damages on CMOS and bipolar integrated structures under focused
ion beam irradiation, Pages 901-905
J. Benbrik, P. Perdu, B. Benteo, R. Desplats, N. Labat, A. Touboul and Y.
Danto
Lien : vide.pdf - | Journal Format-PDF (249 K)

[9] : Junction delineation and EBIC on FIB cross section, Pages 907-912
G. Perez, F. Courtade, B. Benteo, J-L. Gauffier and JL. Kwang
Lien : vide.pdf - | Journal Format-PDF (410 K)

[10] : Direct Observation of Local Strain Field for ULSI Devices, Pages 913-917
N. Hashikawa, K. Fukumoto, T. Kuroi, M. Ikeno and Y. Mashiko
Lien : vide.pdf - | Journal Format-PDF (535 K)

[11] : A new experimental technique to evaluate the plasma induced damage at
wafer level testing, Pages 919-924
L. Pantisano, A. Paccagnella, L. Pettarin, A. Scarpa, G. Valentini, L.
Baldi and S. Alba
Lien : vide.pdf - | Journal Format-PDF (350 K)

[12] : Low frequency noise analysis as a diagnostic tool to assess the quality of
0.25 m Ti-silicided poly lines, Pages 925-929
E. P. Vandamme, I. De Wolf, A. Lauwers and L. K. J. Vandamme
Lien : vide.pdf - | Journal Format-PDF (321 K)

[13] : Hot carrier degradation mechanisms in sub-micron p channel MOSFETs: Impact
on low frequency (1/f) noise behaviour, Pages 931-936
E. Sheehan, P. K. Hurley and A. Mathewson
Lien : vide.pdf - | Journal Format-PDF (299 K)

[14] : Reliability of nitrided wet silicon dioxide thin films in WSi2 or TaSi2
polycide process: influence of the nitridation temperature, Pages 937-942
K. Yckache, P. Boivin, F. Baiget, S. Radjaa, G. Auriel, B. Sagnes, J.
Oualid and A. Glachant
Lien : vide.pdf - | Journal Format-PDF (452 K)

[15] : Assembly and analysis of quantum devices using SPM based methods, Pages
943-950
Lars Montelius, T. Junno, S. -B. Carlsson, M. H. Magnusson, K. Deppert, H.
Xu and L. Samuelson
Lien : vide.pdf - | Journal Format-PDF (550 K)

[16] : Circuit internal logic analysis with Electric Force Microscope- (EFM-)
testing, Pages 951-956
J. Bangert and E. Kubalek
Lien : vide.pdf - | Journal Format-PDF (392 K)

[17] : Failure analysis of integrated devices by Scanning Thermal Microscopy
(SThM), Pages 957-961
G. B. M. Fiege, V. Feige, J. C. H. Phang, M. Maywald, S. Görlich and L. J.
Balk
Lien : vide.pdf - | Journal Format-PDF (351 K)

[18] : Scanning near-field optical microscopy analyses of electronic devices,
Pages : 963-968
R. M. Cramer, W. R. Schade, R. Heiderhoff, L. J. Balk and R. Chin
Lien : vide.pdf - | Journal Format-PDF (443 K)

[19] : A new test method for contactless quantitative current measurement via
scanning magneto-resistive probe microscopy, Pages 969-974
S. Bae, A. Schlensog, W. Mertin, E. Kubalek and M. Maywald
Lien : vide.pdf - | Journal Format-PDF (394 K)

[20] : Automatic Fault Tracing by Successive Circuit Extraction from CAD Layout
Data with the CAD-Linked EB Test System, Pages 975-980
K. Miura, K. Nakamae and H. Fujioka
Lien : vide.pdf - | Journal Format-PDF (429 K)

[21] : Cantilever influence suppression of contactless IC-testing by electric
force microscopy, Pages 981-986
V. Wittpahl, U. Behnke, B. Wand and W. Mertin
Lien : vide.pdf - | Journal Format-PDF (361 K)

[22] : Application of Layout Overlay for Failure Analysis, Pages 987-992
C. Burmer, S. Görlich and S. Pauthner
Lien : vide.pdf - | Journal Format-PDF (391 K)

[23] : Failure Analysis of Wafer using Backside OBIC Method, Pages 993-996
Seigo Ito and Hideo Monma
Lien : vide.pdf - | Journal Format-PDF (379 K)

[24] : ESD protection methodology for deep-sub-micron CMOS, Pages 997-1007
K. Bock, G. Groeseneken and H. E. Maes
Lien : vide.pdf - | Journal Format-PDF (1053 K)

[25] : Overview of the kinetics of the early stages of electromigration under low
(= realistic) current density stress, Pages 1009-1013
J. Van Olmen, J. V. Manca, W. De Ceuninck, L. De Schepper, V. D'Haeger, A.
Witvrouw and K. Maex
Lien : vide.pdf - | Journal Format-PDF (318 K)

[26] : Effects of alloying elements on electromigration, Pages 1015-1020
R. Spolenak, O. Kraft and E. Arzt
Lien : vide.pdf - | Journal Format-PDF (404 K)

[27] : A comparison between normally and highly accelerated electromigration
tests, Pages 1021-1027
S. Foley, A. Scorzoni, R. Balboni, M. Impronta, I. De Munari, A. Mathewson
and F. Fantini
Lien : vide.pdf - | Journal Format-PDF (451 K)

[28] : Electromigration failure modes in damascene copper interconnects, Pages
1029-1034
L. Arnaud, R. Gonella, G. Tartavel, J. Torrès, C. Gounelle, Y. Gobil and
Y. Morand
Lien : vide.pdf - | Journal Format-PDF (461 K)

[29] : The dependence of stress induced voiding on line width studied by
conventional and high resolution resistance measurements, Pages 1035-1040
A. Witvrouw, K. Maex, W. De Ceuninck, G. Lekens, J. D'Haen and L. De
Schepper
Lien : vide.pdf - | Journal Format-PDF (316 K)

[30] : Lateral interface effect on pulsed DC electromigration analysis, Pages
1041-1046
P. Waltz, L. Arnaud, G. Lormand and G. Tartavel
Lien : vide.pdf - | Journal Format-PDF (410 K)

[31] : Mechanical Stress Evolution and the Blech Length: 2D Simulation of Early
Electromigration Effects, Pages 1047-1050
V. Petrescu, A. J. Mouthaan, W. Schoenmaker and C. Salm
Lien : vide.pdf - | Journal Format-PDF (218 K)

[32] : Systematic Derivation of Latchup Design Rules for Submicron CMOS Processes
from Test Structures, Pages 1051-1056
J. A. van der Pol and P. B. M. Wolbert
Lien : vide.pdf - | Journal Format-PDF (414 K)

[33] : Reversibility of charge trapping and SILC creation in thin oxides after
stress/anneal cycling, Pages 1057-1061
P. Riess, R. Kies, G. Ghibaudo, G. Pananakakis and J. Brini
Lien : vide.pdf - | Journal Format-PDF (272 K)

[34] : Precise quantitative evaluation of the hot-carrier induced drain series
resistance degradation in LATID-n-MOSFETs, Pages 1063-1068
Georg H. Walter, Werner Weber, Ralf Brederlow, Reinhard Jurk, Carsten G.
Linnenbank, Christian Schlünder, Doris Schmitt-Landsiedel and Roland
Thewes
Lien : vide.pdf - | Journal Format-PDF (355 K)

[35] : On-wafer heating tests to study stability of silicon devices, Pages
1069-1073
D. Manic, Y. Haddab and R. S. Popovic
Lien : vide.pdf - | Journal Format-PDF (436 K)

[36] : Characterization of SILC in thin-oxides by using MOSFET substrate current,
Pages : 1075-1080
B. De Salvo, G. Ghibaudo, G. Pananakakis and F. Mondon
Lien : vide.pdf - | Journal Format-PDF (246 K)

[37] : Hot Carrier Induced Device Degradation in RF-nMOSFET's, Pages 1081-1084
Tae Park Jong, Jin Lee Byung, Wook Kim Dong, Gun Yu Chong and Kyu Yu Hyun
Lien : vide.pdf - | Journal Format-PDF (219 K)

[38] : The effect of hot electron current density on nMOSFET reliability, Pages
1085-1089
O. Buiu, S. Taylor, I. S. Al-Kofahi and C. Beech
Lien : vide.pdf - | Journal Format-PDF (296 K)

[39] : Dependence of gate oxide breakdown on initial charge trapping under
Fowler-Nordheim injection, Pages 1091-1096
A. Martin, R. Duane, P. O'Sullivan and A. Mathewson
Lien : vide.pdf - | Journal Format-PDF (367 K)

[40] : Modelling and simulation of hot-carriers degradation of high voltage
floating lateral NDMOS transistors, Pages 1097-1101
Eric Vandenbossche, Catherine De Keukeleire, Marc de Wolf, Hugo Van Hove
and Johan Witters
Lien : vide.pdf - | Journal Format-PDF (295 K)

[41] : A new hot carrier degradation law for MOSFET lifetime prediction, Pages
1103-1107
B. Marchand, G. Ghibaudo, F. Balestra, G. Guégan and S. Deleonibus
Lien : vide.pdf - | Journal Format-PDF (241 K)

[42] : Recovery and stress dynamics in bipolar transistors and MOS devices, Pages
1109-1113
F. Ingvarson, L-Å. Ragnarsson and P. Lundgren
Lien : vide.pdf - | Journal Format-PDF (336 K)

[43] : Electrical parameters degradation law of MOSFET during ageing, Pages
1115-1119
Ch. Mourrain, Ch. Tourniol and M J. Bouzid
Lien : vide.pdf - | Journal Format-PDF (292 K)

[44] : Investigation Of The Intrinsic SiO2 Area Dependence Using TDDB Testing And
Model Integration Into The Design Process, Pages 1121-1125
James Prendergast, Nigel Foley and John S. Suehle
Lien : vide.pdf - | Journal Format-PDF (288 K)

[45] : Two-step stress method for the dynamic testing of very thin (8 nm) SiO2
films, Pages 1127-1131
R. Rodríguez, E. Miranda, M. Nafría, J. Suñé and X. Aymerich
Lien : vide.pdf - | Journal Format-PDF (324 K)

[46] : Temperature dependence of snap-back breakdown up to 300°C analyzed using
circuit level model and simulation, Pages 1133-1138
Dirk Uffmann
Lien : vide.pdf - | Journal Format-PDF (390 K)

[47] : Modelling the Field Soft Error Rate of DRAMs by varying the critical cell
charge, Pages 1139-1141
Horst Schleifer, Oskar Kowarik, Kurt Hoffmann and Werner Reczek
Lien : vide.pdf - | Journal Format-PDF (144 K)

[48] : Design of a Low EMI Susceptibility CMOS Transimpedance Operational
Amplifier, Pages 1143-1148
Gianluca Setti and Nicolò Speciale
Lien : vide.pdf - | Journal Format-PDF (355 K)

[49] : Gate bias stress in hydrogenated and unhydrogenated polysilicon thin film
transistors, Pages 1149-1153
B. Tala-Ighil, H. Toutah, A. Rahal, K. Mourgues, L. Pichon, F. Raoult, O.
Bonnaud and T. Mohammed-Brahim
Lien : vide.pdf - | Journal Format-PDF (304 K)

[50] : Use of wafer maps in integrated circuit manufacturing, Pages 1155-1164
C. K. Hansen and P. Thyregod
Lien : vide.pdf - | Journal Format-PDF (699 K)

[51] : Field failure analysis on transmission data equipment due to lightning
discharges, Pages 1165-1169
E. Mino Diaz and J. E. Vila Aresté
Lien : vide.pdf - | Journal Format-PDF (333 K)

[52] : Comparison between field reliability and new prediction methodology on
avionics embedded electronics, Pages 1171-1175
P. Charpenel, P. Cavernes, V. Casanovas, J. Borowski and JM. Chopin
Lien : vide.pdf - | Journal Format-PDF (254 K)

[53] : Improved reliability of bistable circuits by selective hot-carrier stress
reduction, Pages 1177-1182
A. G. M. Das and S. Johnson
Lien : vide.pdf - | Journal Format-PDF (455 K)

[54] : A study of NMOS behavior under ESD stress: simulation and
characterization, Pages 1183-1186
Albert Z. Wang, Chen Tsay, Amit Lele and Peter Deane
Lien : vide.pdf - | Journal Format-PDF (179 K)

[55] : The time of "guessing" your failure time distribution is over!, Pages 1187-1191
K. Croes, J. V. Manca, W. De Ceuninck, L. De Schepper and G. Molenberghs
Lien : private/CROES.pdf - | Journal Format-PDF (297 K)

  [1] :  [PAP396]  K. CROES, J. V. MANCA, W. DE CEUNINCK, L. DE SCHEPPER, G. MOLENBERGHS, The time of guessing your failure time distribution is over!, Microelectronics Reliability, Volume 38, Issues 6-8, 8 June 1998, pp. 1187-1191.

[56] : Extended noise analysis - a novel tool for reliability screening, Pages
1193-1198
Gisela Härtler, Ute Golze and Katrin Paschke
Lien : vide.pdf - | Journal Format-PDF (322 K)

[57] : Study of degradation mechanisms in compound semiconductor based devices by
SEM-cathodoluminescence, Pages 1199-1210
G. Salviati, C. Zanotti-Fregonara, M. Borgarino, L. Lazzarini, L. Cattani,
P. Cova and M. Mazzer
Lien : vide.pdf - | Journal Format-PDF (1033 K)

[58] : Degradation Behavior in InGaAs/GaAs Strained-Quantum Well Lasers, Pages
1211-1214
Tatsuya Takeshita, Mitsuru Sugo, Teruhiko Nishiya, Ryuzou Iga, Mitsuo
Fukuda and Yoshio Itaya
Lien : vide.pdf - | Journal Format-PDF (178 K)

[59] : Early signatures for REDR-based laser degradations, Pages 1215-1220
A. Bonfiglio, M. B. Casu, M. Vanzi, R. De Palo, F. Magistrali and G.
Salmini
Lien : vide.pdf - | Journal Format-PDF (352 K)

[60] : Coupling technology impact on low-cost laser modules performances and
reliability, Pages 1221-1226
Marie Morin, Jean-Pierre Defars and Pascal Devoldère
Lien : vide.pdf - | Journal Format-PDF (368 K)

[61] : Failure mechanisms of Schottky gate contact degradation and deep traps
creation in AlGaAs/InGaAs PM-HEMTs submitted to accelerated life tests,
Pages : 1227-1232
G. Meneghesso, C. Crosato, F. Garat, G. Martines, A. Paccagnella and E.
Zanoni
Lien : vide.pdf - | Journal Format-PDF (363 K)

[62] : Pulsed current stress of Berillium doped AlGaAs/GaAs HBTs, Pages 1233-1237
L. Cattani, M. Borgarino and F. Fantini
Lien : vide.pdf - | Journal Format-PDF (447 K)

[63] : Degradation of performance in MESFETs and HEMTs: simulation and
measurement of reliability, Pages 1239-1244
Ting Feng, N. Strifas and A. Christou
Lien : vide.pdf - | Journal Format-PDF (339 K)

[64] : A new method for temperature mapping on GaAs field effect transistors,
Pages : 1245-1250
E. Martin, J. P. Landesman, P. Braun and A. Fily
Lien : vide.pdf - | Journal Format-PDF (382 K)

[65] : Reliability of industrial packaging for microsystems, Pages 1251-1260
R. de Reus, C. Christensen, S. Weichel, S. Bouwstra, J. Janting, G. Friis Eriksen, K. Dyrbye, T. Romedahl Brown, J. P. Krog, O. Søndergård Jensen and P. Gravesen
Lien : vide.pdf - | Journal Format-PDF (865 K)

[66] : Analysis of thermomechanical stresses in a 3D packaged micro electro mechanical system, Pages 1261-1264
C. Pellet, M. Lecouvé, H. Frémont, A. Val and D. Estève
Lien : private/PELLET.pdf - | Journal Format-PDF (280 K)

  [1] :  [PAP397]  C. Pellet, M. Lecouvé, H. Frémont, A. Val and D. Estève, Analysis of thermomechanical stresses in a 3D packaged micro electro mechanical system, Microelectronics Reliability, Volume 38, Issues 6-8, 8 June 1998, pp. 1261-1264.

[67] : Electrical characterization and modification of a MicroElectroMechanical System (MEMS) for extended mechanical reliability and fatigue testing,
Pages : 1265-1269
D. Meunier, R. Desplats, J. Benbrik, G. Perez, C. Pellet, D. Etsève and B. Benteo
Lien : vide.pdf - | Journal Format-PDF (361 K)

[68] : Structures for piezoresistive measurement of package induced stress in transfer molded silicon pressure sensors, Pages 1271-1276
J. B. Nysæther, A. Larsen, B. Liverød and P. Ohlckers
Lien : vide.pdf - | Journal Format-PDF (410 K)

[69] : Electronic systems packaging: future reliability challenges, Pages 1277-1286
J. Barrett
Lien : vide.pdf - | Journal Format-PDF (817 K)

[70] : A concept to relate wire bonding parameters to bondability and ball bond reliability, Pages 1287-1291
Z. N. Liang, F. G. Kuper and M. S. Chen
Lien : vide.pdf - | Journal Format-PDF (376 K)

[71] : Measurement of the thermomechanical behaviour of the solder-lead interface in solder joints by laser probing : a new method for measuring the bond quality, Pages 1293-1296
S. Dilhaire, A. Cornet, E. Schaub, C. Rauzan and W. Claeys
Lien : private/DILHAIRE.pdf - | Journal Format-PDF (255 K)

  [1] :  [PAP398]  S. Dilhaire, A. Cornet, E. Schaub, C. Rauzan and W. Claeys, Measurement of the thermomechanical behaviour of the solder-lead interface in solder joints by laser probing : a new method for measuring the bond quality, Microelectronics Reliability, Volume

[72] : Experimental design and evaluation of interconnection materials for improvement of joint reliability at power transistors, Pages 1297-1300
P. Jansson
Lien : private/JANSSON.pdf - | Journal Format-PDF (195 K)

  [1] :  [PAP399]  P. Jansson, Experimental design and evaluation of interconnection materials for improvement of joint reliability at power transistors, Microelectronics Reliability, Volume 38, Issues 6-8, 8 June 1998, pp. 1297-1300.

[73] : Crack Mechanism in Wire Bonding Joints, Pages 1301-1305
S. Ramminger, P. Türkes and G. Wachutka
Lien : private/RAMMINGER.pdf - | Journal Format-PDF (451 K)

  [1] :  [PAP400]  S. RAMMINGER, P. TURKES, G. WACHUTKA, Crack Mechanism in Wire Bonding Joints, Microelectronics Reliability, Volume 38, Issues 6-8, 8 June 1998, pp. 1301-1305.

[74] : Materials interfaces in flip chip interconnects for optical components; performance and degradation mechanisms, Pages 1307-1312
Robert H. Esser, A. Dimoulas, N. Strifas, A. Christou and N. Papanicolau
Lien : vide.pdf - | Journal Format-PDF (382 K)

[75] : A study of soldering heat evaluation for SMDs, Pages 1313-1318
Yoshihiro Etoh, Tatsuo Kayama and Kenji Sasaki
Lien : vide.pdf - | Journal Format-PDF (329 K)

[76] : Advanced IGBT modules for railway traction applications: Reliability testing, Pages 1319-1323
H. Berg and E. Wolfgang
Lien : private/BERG1.pdf - | Journal Format-PDF (335 K)

  [1] :  [PAP401]  H. BERG, E. WOLFGANG, Advanced IGBT modules for railway traction applications: Reliability testing, Microelectronics Reliability, Volume 38, Issues 6-8, 8 June 1998, pp. 1319-1323.

[77] : Some observation dealing with the failures of IGBT transistors in high power converters, Pages 1325-1330
S. Januszewski, M. Kociszewska-Szczerbik and H. witek
Lien : private/JANUS2.pdf - | Journal Format-PDF (495 K)

  [1] : [SHEET245] S. JANUSZEWSKI, M. KOCISZEWSKA-SZCZERBIK, H. SWIATEK, Some observation dealing with the failures of IGBT transistors in high power converters, Microelectronics and Reliability, vol. 38, no. 6-8, Jun-Aug 1998, pp. 1325-1330.

[78] : Strain depending reliability of automotive diodes, Pages 1331-1334
L. Galateanu, M. G. Stoica and E. Popa
Lien : private/GALATEANU.pdf - | Journal Format-PDF (267 K)

  [1] :  [PAP402]  L. Galateanu, M. G. Stoica and E. Popa, Strain depending reliability of automotive diodes, Microelectronics Reliability, Volume 38, Issues 6-8, 8 June 1998, pp. 1331-1334.

[79] : Extrapolation of cosmic ray induced failures from test to field conditions for IGBT modules, Pages 1335-1339
C. Findeisen, E. Herr, M. Schenkel, R. Schlegel and H. R. Zeller
Lien : vide.pdf - | Journal Format-PDF (392 K)

  [1] :  [ART245]  C. FINDEISEN, E. HERR, M. SCHENKEL, R. SCHLEGEL, H.R. ZELLER, Extrapolation of cosmic ray induced failures from test to field conditions for IGBT modules, Microelectronics and Reliability, Vol. 38, No. 6-8, Jun-Aug 1998, pp. 1335-1339.

[80] : Thermomechanical deformation imaging of power devices by Electronic Speckle Pattern Interferometry (ESPI), Pages 1341-1345
K. Nassim, L. Joannes and A. CornetS. Dilhaire, E. Schaub and W. Claeys
Lien : private/NASSIM.pdf - | Journal Format-PDF (424 K)

  [1] :  [PAP403]  K. NASSIM, L. JOANNES, A. CORNET, S. DILHAIRE, E. SCHAUB, W. CLAEYS, Thermomechanical deformation imaging of power devices by Electronic Speckle Pattern Interferometry (ESPI), Microelectronics Reliability, Volume 38, Issues 6-8, 8 June 1998, pp. 1341-13

[81] : On the effect of power cycling stress on IGBT modules, Pages : 1347-1352
P. Cova and F. Fantini
Lien : private/COVA1.pdf - | Journal Format-PDF (434 K)

  [1] :  [PAP404]  P. COVA, F. FANTINI, On the effect of power cycling stress on IGBT modules, Microelectronics Reliability, Volume 38, Issues 6-8, 8 June 1998, pp. 1347-1352.

[82] : Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applications, Pages 1353-1359
A. Hamidi, G. Coquery, R. Lallemand, P. Vales and J. M. Dorkel
Lien : private/HAMIDI1.pdf - | Journal Format-PDF (573 K)

  [1] : [SHEET120] A. HAMIDI, G. COQUERY, R. LALLEMAND, P. VALES, J.M. DORKEL, Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applications, ESREF'98, Reliability of Power Devices, Copenhague, 9

[83] : On-Chip Reliability Investigations on Power Modules Actually Working in Inverter Systems, Pages 1361-1366
T. Franke, M. Honsberg-Riedl, P. Simon, J. Otto, S. Ramminger, G. Soelkner and E. Wolfgang
Lien : private/FRANKE.pdf - | Journal Format-PDF (441 K)

  [1] :  [PAP405]  T. FRANKE, M. HONSBERG-RIEDL, P. SIMON, J. OTTO, S. RAMMINGER, G. SOELKNER, E. WOLFGANG, On-Chip Reliability Investigations on Power Modules Actually Working in Inverter Systems, Microelectronics Reliability, Volume 38, Issues 6-8, 8 June 1998, pp. 1361

[84] : Editorial, Page ix
Journal Format-PDF (53 K)

[85] : Index, Pages I-II
Journal Format-PDF (92 K)

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