A. HAMIDI, G. COQUERY, R. LALLEMAND, P. VALES, J.M. DORKEL, "Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applications", ESREF'98, Reliability of Power Devices, Copenhague, 9

A. HAMIDI, G. COQUERY, R. LALLEMAND, P. VALES, J.M. DORKEL, "Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applications", ESREF'98, Reliability of Power Devices, Copenhague, 9 Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [SHEET120]

Titre : A. HAMIDI, G. COQUERY, R. LALLEMAND, P. VALES, J.M. DORKEL, Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applications, ESREF'98, Reliability of Power Devices, Copenhague, 9th October 1998.

Cité dans : [CONF016] ESREF, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis et Microelectronics and Reliability, décembre 2005.
Cité dans :[SHEET140] A. HAMIDI, G. COQUERY, R. LALLEMAND, P. VALES, J.M. DORKEL, Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applications, Microelectronics and Reliability, vol. 38, no. 6-8, J
Cité dans : [DATA146] LTN, Laboratoire des Technologies Nouvelles, INRETS, Arcueil, France.
Cité dans :[SHEET119]

Auteur : A. Hamidi, * ***
Auteur : G. Coquery, *
Auteur : R. Lallemand, *
Auteur : P. Vales, **
Auteur : J.M. Dorkel, **

Adresse : * New Technologies Laboratory, France.
Adresse : ** LAAS, France.
Adreese : *** ABB, Switzerland.

Vers : Bibliographie
Lien : SHEET119.HTM#Bibliographie - référence [3].

Source : Elsevier Science, "Microelectronics Reliability", Volume 38, Issues 6-8, Pages 851-1366, 8 June 1998.
Volume : 38
Issues : 6-8
Date : 8 June 1998
Pages : 1353 - 1359
Stockage : voir sheet140
Switches : IGBT
Lien : private/HAMIDI1.pdf - 7 pages, 574 Ko.

Abstract :
To study the failure mechanisms induced on high power IGBT multichip modules by thermal cycling stress in traction environment, a good
knowledge of the temperature distribution and variations on the chips and in the interfaces between the different layers of the
packaging is necessary.This paper presents a methodology for contact temperature measurements on chips surface in power cycling
conditions and a fast 3D thermal simulation tool for multilayered hybrid or monolithic circuits.The results of static and dynamic
thermal simulation of a 1200 A-3300 V IGBT module are given and compared with the contact temperature measurements results.The
investigation has been done within the RAPSDRA (Reliability of Advanced High Power Semiconductor Device for Traction Applications)
European project.

  [1] :  [DIV339]  BE 95-2105, RAPSDRA: Reliability of Advanced Power Semiconductors for Railway Traction Applications.

Bibliographie

References : 5 Refs.
[1] : Blackburn D.L. A review of thermal characterisation of power transistors. 4th SEMITHERM symp. 1986.
[2] : Dorkel J.M, Tounsi P and Leturcq P. 3D Thermal modelling based on the two-port network theory for hybrid or monolithic integrated power circuits. IEEE Trans. Components, Packaging and Manufacturing Technology, part A, vol. 19, n° 4, 1996, pp. 501-507.
[3] : Hamidi A and Coquery G. Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions. ESREF, 1997, pp. 1755-1758.
[4] : Hamidi A, Coquery O and Lallemand R. Reliability of high power IGBT modules - Testing on thermal fatigue effects due to traction cycles. EPE, 1997, pp 3118-3123.
[5] : Jacob P, Held M Scacco P and Wu w. Reliability testing and analysis of IGBT power semiconductor modules. IEE proc. IGBT propulsion drives, London, 1995, pp 4/1-4/5.

  [1] :  [PAP158]  -------
  [2] :  [PAP158]  -------
  [3] : [SHEET356] A. HAMIDI, G. COQUERY, R. LALLEMAND, Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis,
  [4] : [SHEET122] A. HAMIDI, G. COQUERY, R. LALLEMAND, Reliability of high power IGBT modules. Testing on thermal fatigue effects due to traction cycles, Proc. of EPE Conf., Trondheim, September 1997, vol. 3, pp. 3.118-3.123.
  [5] : [SHEET354] P. JACOB, M. HELD, P. SCACCO, W. WU, Reliability testing and analysis of IGBT power semiconductor modules, IEE proc. IGBT propulsion drives, London, pp. 4.1-4.5, 1995.

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