A. HAMIDI, G. COQUERY, R. LALLEMAND, "Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions", European Symposium on Reliability of Electron Devices, Failure Physics and Analysis,

A. HAMIDI, G. COQUERY, R. LALLEMAND, "Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions", European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [SHEET356]

Titre : A. HAMIDI, G. COQUERY, R. LALLEMAND, Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF'97, Bordeaux, October 1997.

Cité dans : [CONF016] ESREF, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis et Microelectronics and Reliability, décembre 2005.
Cité dans : [DATA241] ESREF'97, Proceedings of the 8th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France, 7-10 octobre 1997.
Cité dans : [DATA146] LTN, Laboratoire des Technologies Nouvelles, INRETS, Arcueil, France.
Cité dans :[SHEET362] A. HAMIDI, G. COQUERY, R. LALLEMAND, Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions, Microelectronics and Reliability, vol. 37, no. 10-11, Oct-Nov, 1997, pp. 1755-1758.
Cité dans :[SHEET119]

Auteur : Hamidi A.
Auteur : Coquery G.
Auteur : Lallemand R

Lien : SHEET119.HTM#Bibliographie - référence [2].
Stockage : Thierry LEQUEU
Lien : private/HAMIDI3.pdf - 320 Ko, 4 pages.
Source : European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF'97, Bordeaux.
Date : October 1997

Abstract :
This paper deals with ageing parameters of high power IGBT modules
in traction applications. Using the results of a great number of
power cycling tests on 400A modules, it shows that, in addition to
the junction temperature excursion, other parameters like the
maximal chip temperature and the current density are involved in
thermal fatigue failures. Besides, contact temperature measurements
achieved on IGBT chip surface in cycling conditions to localise the
maximal thermomechanical stress are presented and correlated with
modules failure analysis. The role of the current density in the
ageing process is finally shown by determining its influence on the
temperature gradient on chip surface.

Bibliographie

References : 4 Refs.

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