Revue : [REVUE296]

Titre : Elsevier Science, Microelectronics Reliability, Volume 42, Issues 4-5, Pages 463-804, April - May 2002.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.

Volume : 42
Issues : 4-5
Pages : 463 - 804
Date : April - May 2002

[1] : , Page 463
Ninoslav Stojadinovic and Michael Pecht
Lien : vide.pdf - | Article | Journal Format-PDF (20 K)

[2] : Silicon integrated circuit technology from past to future, Pages 465-491
Hiroshi Iwai and Shun'ichiro Ohmi
Lien : vide.pdf - | Article | Journal Format-PDF (2505 K)

[3] : Reliability issues of silicon LSIs facing 100-nm technology node, Pages
493-506
Eiji Takeda, Eiichi Murakami, Kazuyoshi Torii, Yutaka Okuyama, Eishi Ebe,
Kenji Hinode and Shin'ichiro Kimura
Lien : vide.pdf - | Article | Journal Format-PDF (634 K)

[4] : A thermodynamic limit for digital electronics, Pages 507-510
Gilbert De Mey
Lien : vide.pdf - | Article | Journal Format-PDF (88 K)

[5] : Construction of a cost-effective failure analysis service
network¯¯microelectronic failure analysis service in Japan, Pages 511-521
S. Nakajima, S. Nakamura, K. Kuji, T. Ueki, T. Ajioka and T. Sakai
Lien : vide.pdf - | Article | Journal Format-PDF (764 K)

[6] : Effects of hydrogen transport and reactions on microelectronics radiation
response and reliability, Pages 523-541
D. M. Fleetwood
Lien : vide.pdf - | Article | Journal Format-PDF (432 K)

[7] : DRAM reliability, Pages 543-553
Kinam Kim, Gi-Tae Jeong, Chan-Woong Chun and Sam-Jin Hwang
Lien : vide.pdf - | Article | Journal Format-PDF (1054 K)

[8] : Analysis and modeling of a digital CMOS circuit operation and reliability
after gate oxide breakdown: a case study, Pages 555-564
B. Kaczer, R. Degraeve, M. Rasras, A. De Keersgieter, K. Van de Mieroop
and G. Groeseneken
Lien : vide.pdf - | Article | Journal Format-PDF (345 K)

[9] : Physical analysis of hard and soft breakdown failures in ultrathin gate
oxides, Pages 565-571
M. K. Radhakrishnan, K. L. Pey, C. H. Tung and W. H. Lin
Lien : vide.pdf - | Article | Journal Format-PDF (463 K)

[10] : Electrical noise and RTS fluctuations in advanced CMOS devices, Pages
573-582
G. Ghibaudo and T. Boutchacha
Lien : vide.pdf - | Article | Journal Format-PDF (274 K)

[11] : A review of recent MOSFET threshold voltage extraction methods, Pages
583-596
A. Ortiz-Conde, F. J. García Sánchez, J. J. Liou, A. Cerdeira, M. Estrada
and Y. Yue
Lien : vide.pdf - | Article | Journal Format-PDF (274 K)

[12] : Defects in silicon oxynitride gate dielectric films, Pages 597-605
Hei Wong and V. A. Gritsenko
Lien : vide.pdf - | Article | Journal Format-PDF (316 K)

[13] : Mechanical reliability in electronic packaging, Pages 607-627
Masazumi Amagai
Lien : private/AMAGAI1.pdf - 1311 Ko.

  [1] :  [ART230]  M. AMAGAI, Mechanical reliability in electronic packaging, Microelectronics Reliability , Volume 42, Issues 4-5, April-May 2002, pp. 607-627.

[14] : Enhancing reliability with thermal transient testing, Pages 629-640
V. Székely
Lien : private/Szekely1.pdf - | Article | Journal Format-PDF (262 K)

  [1] :  [ART240]  V. SZEKELY, Enhancing reliability with thermal transient testing, Microelectronics Reliability, Volume 42, Issues 4-5, April-May 2002, pp. 629-640.

[15] : The "trouble not identified" phenomenon in automotive electronics, Pages
641-651
Dawn A. Thomas, Ken Ayers and Michael Pecht
Lien : vide.pdf - | Article | Journal Format-PDF (603 K)

[16] : Selected failure mechanisms of modern power modules, Pages 653-667
Mauro Ciappa
Lien : vide.pdf - | Article | Journal Format-PDF (613 K)

[17] : Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs, Pages 669-677
N. Stojadinovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, S. Golubovic and S. Dimitrijev
Lien : private/Stojadinovic1.pdf - | Article | Journal Format-PDF (324 K)

  [1] :  [ART239]  N. STOJADINOVIC, I. MANIC, S. DJORIC-VELJKOVIC, V. DAVIDOVIC, S. GOLUBOVIC, S. DIMITRIJEV, Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs, Microelectronics Reliability, Volume 42, Issues 4

[18] : Optical semiconductor device reliability, Pages 679-683
Mitsuo Fukuda
Lien : vide.pdf - | Article | Journal Format-PDF (107 K)

[19] : Failure modes and mechanisms of InP-based and metamorphic high electron
mobility transistors, Pages 685-708
Gaudenzio Meneghesso and Enrico Zanoni
Lien : vide.pdf - | Article | Journal Format-PDF (765 K)

[20] : Electrical and structural investigations in reliability characterisation
of modern passives and passive integrated components, Pages 709-719
Andrzej Dziedzic
Lien : vide.pdf - | Article | Journal Format-PDF (149 K)

[21] : RF CMOS technology for MMIC, Pages 721-733
Chun-Yen Chang, Jiong-Guang Su, Shyh-Chyi Wong, Tiao-Yuan Huang and
Yuan-Chen Sun
Lien : vide.pdf - | Article | Journal Format-PDF (1013 K)

[22] : Amorphous silicon technology for large area digital X-ray and optical
imaging, Pages 735-746
Arokia Nathan, Byung-kyu Park, Qinghua Ma, Andrei Sazonov and John A.
Rowlands
Lien : vide.pdf - | Article | Journal Format-PDF (462 K)

[23] : Zapping thin film transistors, Pages 747-765
N. Toi Golo, F. G. Kuper and T. Mouthaan
Lien : vide.pdf - | Article | Journal Format-PDF (740 K)

[24] : Application of adhesive bonding techniques in hard disk drive head
assembly, Pages 767-777
C. F. Luk, Y. C. Chan and K. C. Hung
Lien : vide.pdf - | Article | Journal Format-PDF (515 K)

[25] : Logarithmic distributions in reliability analysis, Pages 779-786
B. K. Jones
Lien : private/JONES1.pdf - | Article | Journal Format-PDF (130 K)

  [1] :  [ART234]  B. K. JONES, Logarithmic distributions in reliability analysis, Microelectronics Reliability, Volume 42, Issues 4-5, April-May 2002, pp. 779-786.

[26] : Statistical modeling of MOS devices for parametric yield prediction, Pages
787-795
Juin J. Liou, Qiang Zhang, John McMacken, J. Ross Thomson, Kevin Stiles
and Paul Layman
Lien : vide.pdf - | Article | Journal Format-PDF (462 K)

[27] : Use of preliminary ultraviolet and infrared illumination for diagnostics
of MOS and bipolar devices radiation response, Pages 797-804
V. S. Pershenkov, S. V. Avdeev, A. S. Tsimbalov, M. N. Levin, V. V.
Belyakov, D. V. Ivashin, A. Y. Slesarev, A. Y. Bashin, G. I. Zebrev, V. N.
Ulimov and V. V. Emelianov
Lien : vide.pdf - | Article | Journal Format-PDF (247 K)

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