N. STOJADINOVIC, I. MANIC, S. DJORIC-VELJKOVIC, V. DAVIDOVIC, S. GOLUBOVIC, S. DIMITRIJEV, "Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs", Microelectronics Reliability, Volume 42, Issues 4
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Titre : N. STOJADINOVIC, I. MANIC, S. DJORIC-VELJKOVIC, V. DAVIDOVIC, S. GOLUBOVIC, S. DIMITRIJEV, Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs, Microelectronics Reliability, Volume 42, Issues 4-5, April-May 2002, pp. 669-677.
Cité dans :[REVUE296] Elsevier Science, Microelectronics Reliability, Volume 42, Issues 4-5, Pages 463-804, April - May 2002.
Cité dans : [DIV334] Recherche sur les mots clés power cycling of power device, mai 2002.
Auteur : N. Stojadinovic
Auteur : I. Manic
Auteur : S. Djoric-Veljkovic
Auteur : V. Davidovic
Auteur : S. Golubovic
Auteur : S. Dimitrijev
Vers : Bibliographie
Adresse : (a) Faculty of Electronic Engineering, University of Nis, Beogradska 14, 18000 Nis, Yugoslavia
Adresse : (b) Faculty of Civil Engineering and Architecture, University of Nis, Beogradska 14, 18000 Nis, Yugoslavia
Adresse : (c) School of Microelectronic Engineering, Griffith University, Nathan, Queensland 4111, Australia
Tel. : +381-018-529-326
Fax. : +381-018-46-180
Lien : mailto:nino@unitop.elfak.ni.ac.yu
Source : Microelectronics Reliability
Volume : 42
Issues : 4-5
Date : April-May 2002
Pages : 669 - 677
DOI : 10.1016/S0026-2714(02)00039-2
PII : S0026-2714(02)00039-2
Lien : private/Stojadinovic1.pdf - 325 Ko, 9 pages.
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Abstract :
The effects of pre-irradiation high electric field and elevated-temperature bias
stressing on radiation response of power VDMOSFETs have been investigated.
Compared to unstressed devices, larger irradiation induced threshold voltage
shift and mobility reduction in high electric field stressed devices have been
observed, clearly demonstrating inapplicability of electrical stressing for
radiation hardening of power MOSFETs. On the other hand, larger irradiation
induced threshold voltage shift in elevated-temperature bias stressed, and more
considerable mobility reduction in unstressed devices have been observed,
confirming the necessity of performing the radiation qualification testing after
the reliability screening of these devices. The underlying changes of gate
oxide-trapped charge and interface trap densities have been calculated and
analysed in terms of the mechanisms responsible for pre-irradiation stress
effects.
Article Outline
1. Introduction
2. Experimental details
3. Results and discussion
3.1. High electric field stressing
3.2. Elevated-temperature bias stressing
4. Conclusion
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