Article : [PAP285]

Titre : B.P. LINDER, J.H. STATHIS, D.J. FRANK, Calculating the Error in Long Term Oxide Reliability Estimates, IRPS'2001, pp.168-171.

Cité dans : [DIV214]  IRPS'2001, 2001 IEEE International Reliability Physics Symposium, 30 avril - 3 mai 2001, Orlando, Floride.

Adresse :
IBM Research Division, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights NY 10598 USA
Phone : 914-945-2478
Fax : 914-945-2141
Lien : mailto:bplinder@us.ibm.com

Source : IRPS'2001
Pages : 168 - 171
Stockage : Thierry LEQUEU Bibliothèque LMP.
Lien : private/LINDER1.pdf - 1405 Ko, 4 pages.

ABSTRACT :
Ultra-thin oxide reliability is a critical issue in integrated
circuit scaling. Oxide reliability may actually prevent future
scaling of SiO2 gate dielectrics. The statistical error in long
term oxide reliability projections has not been cohesively
treated. Using Monte Carlo techniques, the amount of uncer-tainty
in reliability projections is calculated. Applying the
derived results to typical published data, the uncertainty in the
failure rate is greater than an order of magnitude.

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