R. DEGRAEVE, N. PANGON, B. KACZER, T. NIGAM, G. GROESENEKEN, A. NAEM, "Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability", VLSI Technology, 1999, pp. 59-60.

R. DEGRAEVE, N. PANGON, B. KACZER, T. NIGAM, G. GROESENEKEN, A. NAEM, "Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability", VLSI Technology, 1999, pp. 59-60. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [PAP288]

Titre : R. DEGRAEVE, N. PANGON, B. KACZER, T. NIGAM, G. GROESENEKEN, A. NAEM, Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability, VLSI Technology, 1999, pp. 59-60.

Cité dans :[PAP285]

Auteur : Degraeve, R.
Auteur : Pangon, N.
Auteur : Kaczer, B.
Auteur : Nigam, T.
Auteur : Groeseneken, G.
Auteur : Naem, A. - IMEC, Leuven, Belgium

Stockage : Thierry LEQUEU
Lien : private/DEGRAEVE1.pdf - 2 pages, 128 Ko.
Lien : PAP285.HTM#Bibliographie - référence [3].
Source : VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Pages : 59 - 60
Date : 14-16 June 1999
ISBN : 4-930813-93-X
Info : IEEE Catalog Number: 99CH36325 - Total Pages : xvi+174
References : 7
Accession_Number : 6490101

Abstract :
A systematic study of oxide reliability is presented in the
thickness range 13.8 nm to 2.8 nm. It is demonstrated that (i)
the time-to-breakdown should be extrapolated as a function of
gate voltage for sub-5 nm oxides, (ii) the temperature
acceleration of time-to-breakdown increases drastically with
decreasing thickness, and (iii) the combination of increased
temperature acceleration, area scaling and low percentage failure
rates leads to marginal intrinsic reliability for ultra-thin
oxides, severely limiting further downscaling of oxide thickness.

Subject_terms :
MOS integrated circuits; temperature acceleration; oxide
breakdown; ultra-thin gate oxide reliability; oxide reliability;
gate oxide thickness; time-to-breakdown; extrapolation; gate
voltage; time-to-breakdown temperature acceleration; area
scaling; failure rates; intrinsic reliability; ultra-thin oxides;
downscaling; oxide thickness; 13.8 to 2.8 nm; SiO/sub 2/-Si

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