S. MOREAU, S. FORSTER, T. LEQUEU, R. JERISIAN, "Influence of the turn-on mechanism on TRIACs' reliability: di/dt thermal fatigue study in Q1 compared to Q2", Microelectronics Reliability, Volume 42, Issues 9-10, September

S. MOREAU, S. FORSTER, T. LEQUEU, R. JERISIAN, "Influence of the turn-on mechanism on TRIACs' reliability: di/dt thermal fatigue study in Q1 compared to Q2", Microelectronics Reliability, Volume 42, Issues 9-10, September - October 2002, pp. 1663-1666. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [ART303]

Titre : S. MOREAU, S. FORSTER, T. LEQUEU, R. JERISIAN, Influence of the turn-on mechanism on TRIACs' reliability: di/dt thermal fatigue study in Q1 compared to Q2, Microelectronics Reliability, Volume 42, Issues 9-10, September - October 2002, pp. 1663-1666.

Cité dans : [CONF016] ESREF, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis et Microelectronics and Reliability, décembre 2005.
Cité dans : [DIV312]  ESREF'2002, 13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, du 7 au 11 octobre 2002, Bellaria, Rimini, Italie.
Cité dans : [DATA033] Liste des publications de Thierry LEQUEU et activités de recherche, octobre 2022.
Cité dans : [ART162]  S. FORSTER, T. LEQUEU, R. JERISIAN, Degradation mechanism of power devices under di/dt thermal shocks: turn-on of a TRIAC in Q3, Microelectronics Reliability, Volume 43, Issues 01, January 2003, pp. 89-98.

Auteur : Stéphane MOREAU
Auteur : Stéphane FORSTER
Auteur : Thierry LEQUEU
Auteur : Robert JERISIAN

Adresse : LMP-STMicroelectronics, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France
Source : Microelectronics Reliability
Volume : 42
Issues : 9-10
Date : September - October 2002
Pages : 1663 - 1666
Lien : private/MOREAU2.pdf - 300 Ko, 4 pages.
Vers : Bibliographie

Abstract :
The Joule effect self-heating is the main cause of breakdown of power components working under high
currents. During turn-on, the component could be damage because of a too high-density current flowing through
the structure. During this event, a high temperature could be reach, resulting in a fatal device failure due to a
localized thermal damage or bulk fusion. In this paper, the authors present the influence of the turn-on
mechanism (turn-on in quadrant Q1 compared to Q2) on the reliability of TRIACs, thanks to statistical results
and failure analysis.

Bibliographie

References : 5
[1] : S. FORSTER, T. LEQUEU, R. JERISIAN, A. HOFFMANN, "3-D analysis of the breakdown localized defects of ACS(TM) through a TRIAC study", Microelectronics Reliability, vol. 40, pp. 1695-1700, 2000.
[2] : S. FORSTER, T. LEQUEU, R. JERISIAN, "Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects", Microelectronics Reliability, vol. 41, pp. 1677-1682, 2001.
[3] : R. B. ABERNETHY, "The New Weibull Handbook", 4th edition, p. 14, April 2001.
[4] : W. KUO, W.-T. K. CHIEN, T. KIM, "Reliability, yield, and stress burn-in. A unified approach for microelectronics systems manufacturing and software development", Kluwer academic publishers, p. 53 and pp. 58-59, 1998.
[5] : ISE TCAD manuals, release 6.0 (1995-99)

  [1] : [SHEET459] S. FORSTER, T. LEQUEU, R. JERISIAN, A. HOFFMANN, 3-D analysis of the breakdown localized defects of ACSTM through a triac study, Microelectronics Reliability, October 2000, Vol. 40, pp. 1695-1700.
  [2] :  [ART163]  S. FORSTER, T. LEQUEU, R. JERISIAN, Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects, Microelectronics Reliability, Volume 41, Issues 9-10, September - October 2001, pp. 1677-1682.
  [3] : [LIVRE234] R.B. ABERNETHY, The New Weibull Handbook, 1996, 536 Oyster Road, North Palm Beach, FL 33408-4328.
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  [5] :  [DATA127] ISE, Integrated Systems Engineering TCAD, version 6.0, 1995-1999.

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