Article : [ART162]
Titre : S. FORSTER, T. LEQUEU, R. JERISIAN, Degradation mechanism of power devices under di/dt thermal shocks: turn-on of a TRIAC in Q3, Microelectronics Reliability, Volume 43, Issues 01, January 2003, pp. 89-98.
Cité dans :[REVUE386] Elsevier Science, Microelectronics Reliability, Volume 43, Issue 1, Pages 1-177, January 2003. Cité dans : [DATA033] Liste des publications de Thierry LEQUEU et activités de recherche, octobre 2022.Auteur : S. Forster (a)(b)
Adresse :
(a) : LMP-STMicroelectronics, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France
(b) : CLOES, 2 rue E. Belin, 57070 Metz, France
Vers : Bibliographie
Volume : 43
Issues : 1
Date : january 2003
Site : http://www.elsevier.com/locate/microrel
Pages : 89 - 98
Lien : private/FORSTER4.pdf - 10 pages, 870 Ko.
Abstract :
The authors explain the degradation mechanism of a TRIAC submitted to the application of strong di/dt during the turn-on in quadrant Q3.
From reliability results,analysis of the failure modes and thermo-mechanical simulation of the structure, the authors propose a degradation model,which can be used to give the number of commutation cycles before failure of the component.
Bibliographie |
[1] : [SHEET459] S. FORSTER, T. LEQUEU, R. JERISIAN, A. HOFFMANN, 3-D analysis of the breakdown localized defects of ACSTM through a triac study, Microelectronics Reliability, October 2000, Vol. 40, pp. 1695-1700. [2] : [ART163] S. FORSTER, T. LEQUEU, R. JERISIAN, Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects, Microelectronics Reliability, Volume 41, Issues 9-10, September - October 2001, pp. 1677-1682. [3] : [SHEET204] I.L. SOMOS, L.O. ERIKSSON, W.H. TOBIN, Understanding di/dt ratings and life expectancy for thyristors, Power Conversion And Intelligent Motion, pp. 56-59, February 1986. [4] : [LIVRE006] S. WOLF, Silicon Processing of the VLSI ERA - Volume 2 - Process Integration, 1990. [5] : [SHEET168] P. ALOISI, Failure diagnosis in medium power semiconductor, EPE'91, Firenze, vol. 3, pp. 117-119. [6] : [LIVRE200] D. BROEK, Elementary Engineering Fracture Mechanics, June 1982, Martinus Nijhoff Publishers, 524 pages. [7] : [PAP310] R. BLISH, N. DURRANT, Semiconductor Device Reliability Failure Models, International SEMATECH, Technology Transfer # 00053955A-XFR, May 31, 2000, 34 pages. [8] : [SHEET329] L.F. COFFIN, A Study of the Effects of Cyclic Thermal Stresses on a Ductile Metal, Transactions of ASME, 1954, vol. 76, pp. 931-950.
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