G. LEFRANC, T. LICHT, H.J. SCHULTZ, R. BEINERT, G. MITIC, "Reliability testing of high-power multi-chip IGBT modules", ESREF'2000, pp. 1659-1663.

G. LEFRANC, T. LICHT, H.J. SCHULTZ, R. BEINERT, G. MITIC, "Reliability testing of high-power multi-chip IGBT modules", ESREF'2000, pp. 1659-1663. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [ART183]

Titre : G. LEFRANC, T. LICHT, H.J. SCHULTZ, R. BEINERT, G. MITIC, Reliability testing of high-power multi-chip IGBT modules, ESREF'2000, pp. 1659-1663.

Cité dans : [DATA126] ESREF'2000, 11th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Dresden, Germany, 2-6 octobre 2000.
Cité dans : [ART185]  G. LEFRANC, T. LICHT, H.J. SCHULTZ, R. BEINERT, G. MITIC, Reliability testing of high-power multi-chip IGBT modules,Microelectronics Reliability, Vol. 40, Issue 8-10, august-october 2000, pp. 1659-1663.
Cité dans : [DIV334]  Recherche sur les mots clés power cycling of power device, mai 2002.

Auteur : G. Lefranc (a)
Auteur : T. Licht (b)
Auteur : H.J. Schultz (a)
Auteur : R. Beinert (b)
Auteur : G. Mitic (a)

(a) : Siemens AG, Corporate Technology, 81730 Munich, Germany
(b) : EUPEC GmbH & Co KG, 59568 Warstein, Germany

Lien : private/LEFRANC0.pdf - 6 pages, 441 Ko.
Pages : 1659 - 1663
Date : 02-06 octobre 2000
Infos : Reliability testing EUPEC (cf thèse d'Hamidi)
Switches : IGBT
Power : 3500V x 2400A
des IGBT 6.5 kV pour une utilisation en DC 3.5 kV (coefficient de 2 environ)
up to 2400A ! power dissipation up to 200W/cm2. 100 FIT for traction application : 1 failure in 10e7 heures composants.
Thermocouples diamêtre 2 mm, courant I = 1200 A, P = 4.5 kW.
Pour les soudures : Acoustic Scanning Microscope

Abstract :
Power-cycling tests are among the most important tools used for evaluating the reliability of power
modules. They are in most cases carried out at the rated module current and during a relatively short cycle
time, i.e. under worst-case operating conditions. Test conditions must be defined which also permit information
to be obtained about failure mechanisms in the various parts of the module. This paper describes the
measurement of the temperature distribution, the test conditions, the rates of temperature change in modules
with 36 semiconductor components as well as the results of power-cycling tests in which the thermo-mechanical
stress principally affects the substrate-baseplate interface.

Bibliographie

References : 9
[1] : Hierholzer, M., "Application of high-power IGBT modules", Proc. PCIM 96, 1996, 26.
[2] : Hamidi, A. et al., "Reliability of high-power IGBT modules: reliability testing", Proc. EPE 97, Trondheim
[3] : Berg, H., Wolfgang, E., "Advanced IGBT modules for railway traction applications: Testing for thermal fatigue effects due to traction cycles", Proc. ESREF 98, Copenhagen.
[4] : Mitic, G. et al., "Reliability of AlN substrates and their solder joints in IGBT power modules", IEEE-Electron Device Society, Proc. ESREF 99, 1159-1164 (1999)
[5] : Sommer, K. H. et al., "Multi-chip high-power IGBT modules for traction and industrial application", Proc. EPE97, Trondheim.
[6] : Brite EuRam BE 95-2105 RAPSDRA: Reliability of Advanced Power Semiconductors for Railway Traction Applications.
[7] : Coquery et al., "Reliability improvement of the soldering thermal fatigue with AlSiC technology on traction high-power IGBT modules", Proc. EPE 99, Lausanne.
[8] : Herr, E. et al., "Substrate to base solder joint reliability in high-power IGBT modules", Microelectron. Reliab. Vol. 37, 1997 (1719).
[9] : Lefranc, G. et al "AlSiC improves reliability of IGBT power modules", Int. conference composite materials, Proc. ICCM 12, Paris, 1999.

  [1] :  [ART220]  M. HIERHOLZER, Application of high-power IGBT modules, Proc. PCIM 96, 1996, 26.
  [2] : [SHEET122] A. HAMIDI, G. COQUERY, R. LALLEMAND, Reliability of high power IGBT modules. Testing on thermal fatigue effects due to traction cycles, Proc. of EPE Conf., Trondheim, September 1997, vol. 3, pp. 3.118-3.123.
  [3] :  [PAP401]  H. BERG, E. WOLFGANG, Advanced IGBT modules for railway traction applications: Reliability testing, Microelectronics Reliability, Volume 38, Issues 6-8, 8 June 1998, pp. 1319-1323.
  [4] :  [PAP412]  G. MITIC, R. BEINERT, P. KLOFAC, H. J. SCHULTZ, G. LEFRANC, Reliability of AIN substrates and their solder joints in IGBT power modules, Volume 39, Issues 6-7, June - July 1999, pp. 1159-1164.
  [5] :  [ART221]  K. SOMMER, J. GOTTERT, G. LEFRANC, R. SPANKE, Multi-chip high-power IGBT modules for traction and industrial application, Proc. EPE' 97, Trondheim, Norway, September 22-24, pp. 512-515.
  [6] :  [DIV339]  BE 95-2105, RAPSDRA: Reliability of Advanced Power Semiconductors for Railway Traction Applications.
  [7] : [SHEET119] G. COQUERY, R. LALLEMAND, D. WAGNER, M. PITON, H. BERG, K. SOMMER, Reliability improvement of the soldering thermal fatigue with AlSiC technology on traction high power IGBT modules, EPE'99, paper 904, 1999.
  [8] :  [ART223]  E. HERR, T. FREY, R. SCHLEGEL, A. STUCK, R. ZEHRINGER, Substrate to base solder joint reliability in high-power IGBT modules, Microelectron. Reliab. Vol. 37, 1997, pp. 1719-1722.
  [9] :  [ART222]  G. Lefranc, G. et al AISiC improves re1iability of IGBT power modules, Int. conference composite materials, Proc. ICCM 12, Paris, 1999.

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