Joint Symposium with FEMS
Symposium Organizers:
A. MESLI, CNRS, Laboratoire PHASE, Strasbourg, France
J. WEBER, Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany
W. SCHRÖTER, Universität Göttingen, 4. Physikal. Institut, Göttingen, Germany
The assistance provided by
- Wacker Siltronic Germany
- BOMEM Inc. Canada
is acknowledged with gratitude.
Tuesday, June 1, 1999 - Morning
Mardi 1er juin 1999, Matin
| F-I.1 | 9:00-9:35 | Invited | MAPPING, COMPOSITION AND ELECTROSTATIC POTENTIALS IN MATERIALS AND DEVICES, A. Ourmazd, Institute for Semiconductor Physics, Walter-Korsing-Str. 2, 15230 Frankfurt (Oder), Germany |
| F-I.2 | 9:35-10:10 | Invited | MICROSCOPIC CHARACTERIZATION OF DEFECTS USING SCANNING TUNNELING MICROSCOPY, D. Stievenard, IEMN-Dpt ISEN, 41 Bd Vauban, 59046 Lille Cedex, France |
| 10:10-10:40 | BREAK |
| F-II.1 | 10:40-11:15 | Invited | ATOMIC SIMULATION OF ION IMPLANTATION AND ITS APPLICATION IN Si TECHNOLOGY, M. Posselt and B. Schmidt, Forschungszentrum Rossendorf, P.O.Box 510119, 01314 Dresden, Germany |
| F-II.2 | 11:15-11:35 | COMBINED PIII-RTP DOPING OF Si WITH LOW DEFECT DENSITY, I. Pintér, A.H. Abdulhadi, I. Bársony, Res. Inst. Techn. Phys. And Mat. Sci.-MFA, P.O.Box 49, 1525 Budapest, Hungary, J. Poortmans, S. Sivoththaman, IMEC, Kapeldreef 75, Leuven, 3001, Belgium and G.J. Adriaenssens, KU Celestijnenlaan 200D, Heverlee-Leuven 3001, Belgium | |
| F-II.3 | 11:35-11:55 | CLUSTER FORMATION AND GROWTH IN Si ION IMPLANTED c-Si, S. Libertino, S. Coffa, A. La Magna and F. La Via, CNR-IMETEM, Stradale Primosole 50, 95121 Catania, Italy | |
| F-II.4 | 11:55-12:15 | VACANCY-RELATED DEFECTS IN ION IMPLANTED AND ELECTRON IRRADIATED SILICON, A.R. Peaker, J.H. Evans-Freeman, J. Terry, P.Y.Y. Khan, Centre for Electronic Materials, University of Manchester, Institute of Science and Technology, PO Box 88, Manchester, M60 1QD, UK, L. Rubaldo, CNRS/MPI High Magnetic Field Laboratory, Grenoble, France | |
| 12:15-14:00 | LUNCH |
Tuesday June 1, 1999 - Afternoon
Mardi 1er juin 1999, Après-midi
| F-III.1 | 14:00-14:35 | Invited | EFFECT OF THE TRANSIENT ENHANCED DIFFUSION OF BORON ON THE CHARACTERISTICS OF SUB-0.1m N-MOSFETS, S. Kumashiro, ULSI Device Development Labs., NEC Corp., 1120 Shimokuzawa, Sagamihara, Kanagawa 229-1198, Japan |
| F-III.2 | 14:35-14:55 | MODELISATION OF EXTENDED DEFECTS TO SIMULATE THE TRANSIENT ENHANCED DIFFUSION OF BORON, E. Lampin, V. Senez, IEMN-Dpt ISEN, BP 69, 59652 Villeneuve d’Ascq Cedex, France, A. Claverie, CEMES-CNRS, BP 4347, 31055 Toulouse Cedex, France | |
| F-III.3 | 14:55-15:15 | MICROSCOPIC DEFECTS IN SILICON INDUCED BY ZINC OUT-DIFFUSION, A. Giese, H. Bracht, N.A. Stolwijk, and D. Baither, University of Münster, Institut für Metallforschung, 48149 Münster, Germany | |
| F-III.4 | 15:15-15:35 | GOLD AND PLATINUM PROFILES IN FAST POWER DEVICES, O. Boström, B. Pichaud, M. Regula, Lab. MATOP, University Aix-Marseille III, 13397 Marseille Cedex 20, France, J.C. Bajard, G. Blondiaux, CERI CNRS, 45071 Orléans Cedex 2,France, O.A. Soltanovich, E.B. Yakimov, IPMT RAS, Chernogolovka, 142432 Russia, A. Lhorte and J.B. Quoirin, ST Microelectronics, BP0155, 37001 Tours Cedex, France | |
| F-III.5 | 15:35-15:55 | BERYLLIUM DIFFUSION IN InGaAs/InGaP STRUCTURES GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY, S. Koumetz, O. Valet, K. Ketata, and J. Marcon, LEMI-UPRES.EA.2654-UIT, Université de Rouen, 76821 Mont Saint Aignan, France | |
| 15:55-16:25 | BREAK |
| F-IV.1 | 16:25-17:00 | Invited | SIMULATION OF PHOSPHOROUS-DIFFUSION GETTERING IN Si, V. Kveder, W. Schröter, A. Sattler, M. Seibt, IV. Physikalisches Institut der Universität Göttingen, Bunsenstr. 11-15, 37073 Göttingen, Germany |
| F-IV.2 | 17:00:17:20 | RADIATION ENHANCED PLATINUM DIFFUSION IN N-TYPE SILICON, D.C. Schmidt, J.F. Barbot, C. Blanchard, Laboratoire de Métallurgie Physique UMR6630 CNRS, Futuroscope, France, S. Godey, E. Ntsoenzok, CERI-CNRS, Orléans, France, B.G. Svensson, Royal Institute of Technology, Kista-Stockholm, Sweden | |
| F-IV.3 | 17:20-17:40 | FORMATION AND ANNEALING OF DEFECTS DURING HIGH TEMPERATURE PROCESSING OF ION IMPLANTED EPITAXIAL SILICON: ROLE OF DOPANT IMPLANTS, P.K. Giri, G. Galvano, A. La Ferla, E. Rimini, Dipartimento di Fisica, 95129 Catania, Italy and S. Coffa, V. Raineri, CNR-IMETEM, 95121 Catania, Italy | |
| F-IV.4 | 17:40-18:00 | EFFECTS OF NITROGEN ION IMPINGEMENT DURING MOLECULAR BEAM EPITAXIAL GROWTH Of GaAs AS A FUNCTION OF ACCELERATION ENERGY, Y. Fukuzawa*, T. Shima*, H. Sanpei*, Y. Makita* S. Kimura*, and Y. Nakamura**, *Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305-8568, Japan; **Nippon Institute of Technology, 4-1 Gakuendai, Miyashiro, Minamisaitama 345-8501, Japan |
Wednesday June 2, 1999 - Afternoon
Mercredi 2 juin 1999, Après-midi
| F-V.1 | 13:30-14:05 | Invited | ULTRADENSE GAS BUBBLES IN HYDROGEN- OR HELIUM- IMPLANTED (OR CO-IMPLANTED) SILICON, G.F. Cerofolini, STMicroelectronics, 20041 Agate, Italy and F. Corni, C. Nobili, G. Ottaviani, R. Tonini, Dipartimento di Fisica dell’Università, 41100 Modena, Italy |
| F-V.2 | 14:05-14:25 | GETTERING OF PLATINUM BY CAVITIES INDUCED IN SILICON BY HIGH ENERGY IMPLANTATION OF HELIUM, S. Godey, E. Ntsoenzok, CNRS/CERI, Orléans, G. Mariani-Regula, B. Pichaud, MATOP-CNRS, Université d’Aix-Marseille III, Marseille, M.F. Beaufort, J.F. Barbot, LMP UMR6630 CNRS, Futuroscope, France | |
| F-V.3 | 14:25-14:45 | EVOLUTION OF VACANCY-LIKE DEFECTS IN HE-IMPLANTED (100) Si STUDIED BY THERMAL DESORPTION SPECTROMETRY, F. Corni, C. Nobili, R. Tonini, G. Calzolari, I.N.F.M., Dipartimento di Fisica, University of Modena, Via G.Campi 213/A, 41100 Modena, Italy | |
| F-V.4 | 14:45-15:05 | DEFECT-RELATED GROWTH PROCESSES AT AN AMORPHOUS/CRYSTALLINE INTERFACE IN SILICON; A MOLECULAR DYNAMICS STUDY, B. Weber, D.M. Stock, and K. Gärtner, Institut für Festkörperphysik, FSU Jena, Max-Wien-Platz 1, 07743 Jena, Germany | |
| F-V.5 | 15:05-15:25 | CLUSTERING OF ULTRA-LOW-ENERGY IMPLANTED BORON IN SILICON DURING ACTIVATION ANNEALING, E. Schroer*, V. Privitera*, F. Priolo**, E. Napolitani***, *CNR-IMETEM, Strada Primosolole 50, 95121 Catania, **INFM and Dipartimento di Fisica, Universita di Catania, ***INFM and Dipartimento di Fisica, Universita di Padova, Italy | |
| F-V.6 | 15:25-15:45 | PARAMAGNETIC DEFECTS AFTER PHOSPHORUS IMPLANTATION AND ANNEALING IN IIa DIAMOND CRYSTALS, N. Casanova*, A. Deneuville*, E. Gheeraert*, C. Uzan Saguy**, R. Kalish**, 1Laboratoire d’Etudes des Proprietes Electroniques des Solides, CNRS et Universite de Grenoble, BP 166, 38042 Grenoble Cedex 9, France, 2Physics Department and Solid State Institute, Technion-Israel Institute of Technology, 32000 Haifa, Israel. | |
| F-V.7 | 15:45-16:05 | ANNIHILATION AND FORMATION OF ELECTRON TRAPS IN HYDROGEN IMPLANTED N-TYPE SILICON BY LIGHT ILLUMINATION, Y. Tokuda*, A. Ito**, *Aichi Institute of Technology, 470-0392 Toyota, **Suzuka National College of Technology, 510-02 Suzuka, Japan | |
| 16:05-16:35 | BREAK |
16:35-18:20
Ion-Beam Interaction and Characterization
| F-I/P1 | MODELING OF IMPURITY GETTERING IN SILICON BY ION IMPLANTATION INDUCED DEFECTS, K.-H. Heinig and H.U. Jäger, Forschungszentrum Rossendorf, Postfach 510119, 01314 Dresden, Germany |
| F-I/P2 | GISAXS STUDY OF DEFECTS IN He IMPLANTED SILICON, P. Dubcek*,**, O. Milat***, B. Pivac**, S. Bernstorff*, H. Amenitsch****, R. Tonini*****, F. Corni***** and G. Ottaviani*****, *Sincrotrone Trieste, SS 14 km 163,5, 34012 Bassovizza (TS), Italy; **R. Boakovi Institute, P.O.Box 1016, HR-10000 Zagreb, Croatia; ***Institute of Physics, P.O.Box 1010, HR-10000 Zagreb, Croatia; ****Institute for Biophysics and X-ray Structure Research, Austrian Academy of Sciences, Steyerg. 17, 8010 Graz, Austria; *****University of Modena, Physics Department, Via Campi 213a, 41100 Modena, Italy |
| F-I/P3 | EFFECT OF STRESS ON DEFECT TRANSFORMATION IN HYDROGEN - AND OXYGEN - IMPLANTED SILICON, J. Bak-Misiuk, J. Domagala, Institute of Physics PAS, Lotników 46, 02-668 Warsaw; A. Misiuk, IET, 02-668 Warsaw; B. Surma, IEMT, 01-919 Warsaw; Jan Jun, HPRC PAS, 01-142 Warsaw, Poland; I.V. Antonova, V.P. Popov, ISP RAS, 630090 Novosibirsk, Russia |
| F-I/P4 | LARGE ANGLE CONVERGENT BEAM ELECTRON DIFFRACTION STRAIN MEASUREMENTS IN HIGH DOSE HELIUM IMPLANTED SILICON, F. Gambetta, S. Frabboni, R. Tonini, F. Corni and G. Ottaviani, INFM and Dipartimento di Fisica, Università di Modena e Reggio Emilia, Via Campi 213/A, 41100 Modena, Italy |
| F-I/P5 | IMPURITY AND POINT DEFECTS GETTERING INVESTIGATION IN THE Si-SiO2 SYSTEL BY MEANS OF ESR, D. Kropman, Estonian Maritime Academy, Tallinn, Estonia; T. Kärner, Deparment of Physics, University of Tartu, Tartu, Estonia; U. Abru, Tondi Electronics, Tallinn, Estonia |
| F-I/P6 | THERMAL STABILITY OF DEFECT COMPLEXES DUE TO HIGH DOSE MEV IMPLANTATION IN SILICON, P.K. Giri, Dipertimento di Fisica, 95129 Catania, Italy and Y.N. Mohapatra, Deptartment of Physics, Indian Institute of Technology, Kanpur 208016, India. |
| F-I/P7 | CARBON INFLUENCE ON g -IRRADIATION INDUCED DEFECTS IN n-TYPE CZ Si, M. Vujicic, V. Borjanovic*, and B. Pivac, R. Bockovic Institute, PO Box 1016, HR-10000 Zagreb, Croatia, *Faculty of Electrical Engineering and Computing, Unska 3, HR-10000 Zagreb, Croatia |
| F-I/P8 | DEACTIVATION KINETICS IN HEAVILY ARSENIC DOPED SILICON, D. Nobili, Dept. of Applied Chem. and Mat. Sci., University of Bologna, Viale Risogimento 2, 40100 Bologna, Italy; S. Solmi, CNT-LAMER Insitute, Via P. Gobetti 101, 40129 Bologna, Italy; M. Merli, INFM, Dept. of physics, University of Ferrara, Via del Paradiso 12, 44100 Ferrara, Italy and J. Shao, Shanghai Institute of Optics and Fine Mechanics, Chines Academy of Sciences, P.O. Box 80021, 201800 Shanghi, P.R. China |
| F-I/P9 | PROPERTIES OF A METASTABLE DEFECT INTRODUCED IN SULFUR DOPED GaAs BY PARTICLE IRRADIATION, M.J. Legodi, F.D. Auret and S.A. Goodman, Department of Physics, University of Pretoria, Pretoria 0002, South Africa |
| F-I/P10 | DEEP LEVEL DEFECTS IN Pd/n-GaAs IRRADIATED WITH 0.04 - 12 MeV PROTONS, F.D. Auret, S.A. Goodman and M.J. Legodi, Department of Physics, University of Pretoria, Pretoria 0002, South Africa |
| F-I/P11 | STRUCTURAL PROPERTIES OF ERBIUM-IMPLANTED GALLIUM NITRIDE, N.A. Sobolev, V.V. Lundin, V.I. Sakharov, I.T. Serenkov, A.S. Usikov, Ioffe Physicotechnical Institute, 194021 St. Petersburg, Russia and A.M. Emel`yanov, St. Petersburg State Technical University, St. Petersburg 195251, Russia |
| F-I/P12 | RADIATION INDUCED DEFECTS IN MOVPE GROWN n-GaN, S.A. Goodman*, F.D. Auret*, F.K. Koschnick**, J.-M. Spaeth**, B. Beaumont***, and P. Gibart***, *Physics Dept. University of Pretoria, South Africa, **Fachbereich Physik, Universität GH Paderborn, Paderborn, Germany, ***CRHEA-CNRS Valbonne, France |
| F-I/P13 | NEW RECOMBINATION CENTRES IN NEUTRON TRANSMUTATION DOPED InP:Fe, M.A. Hernandez, F.J. Navarro and B. Mari, Universidad Politecnica de Valencia, Dpto. Fisica Aplicada, Cami de Vera s/n, 46071 Valencia, Spain |
| F-I/P14 | THERMAL DONOR FORMATION IN CRYSTALLINE SILICON IRRADIATED BY HIGH ENERGY IONS, E.P. Neustroev, I.V. Antonova, V.P. Popov, V.F. Stas, Institute of Semiconductor Physics, Lavrentieva 13, Novosibirsk 630090, Russia, V.A. Skuratov, A.Yu. Dyduk, FLNR, JINR, 141980 Dubna, Russia |
| F-I/P15 | ENHANCED FORMATION OF THERMAL DONORS IN OXYGEN IMPLANTED SILICON ANNEALED AT DIFFERENT PRESSURES, I.V. Antonova, V.P. Popov, E.P. Neustroev, D.V. Kilanov, Institute of Semiconductor Physics, Lavrentieva 13, Novosibirsk 630090, Russia and A. Misiuk, Institute of Electron Technology, Warsaw, Poland |
| F-I/P16 | ELECTRON BEAM INDUCED OPTICAL AND ELECTRONICAL PROPERTIES OF SiO2, H.J. Fitting, T. Barfels, A. von Czarnowski, Physics Department, Rostock University, Universitaets Platz 3, 18051 Rostock, Germany and A.N. Trukhin, Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., 1063 Riga, Latvia |
| F-I/P17 | STRUCTURAL NATURE OF THE N2 RIE PLASMA INDUCED SLOW STATES AND BULK TRAPS IN THIN SiO2-Si STRUCTURES, A. Paskaleva E.Atanassova, Institute of Solid State Physics, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria |
| F-I/P18 | MICROWAVE HYDROGEN PLASMA PROCESSING OF DIAMOND SURFACE, N. Casanova, A. Deneuville, E. Gheeraert, Laboratoire d’Etudes des Propriétés Electroniques des Solides, CNRS et Université de Grenoble, BP 166, 38042 Grenoble Cedex 9, France |
| F-I/P19 | THERMALLY STIMULATED INVESTIGATIONS ON DIAMOND BASED RADIATION DETECTORS, D. Tromson, P. Bergonzo, A. Brambilla, C. Mer, C. Hordequin, F. Foulon, LETI, CEA - Technologies Avancées/DEIN/SPE, CEA/Saclay, 91191 Gif-sur-Yvette, France and V.N. Amosov, TRINITI, Division of Physics of Thermonuclear Reactors, Troitsk Moscow reg. 142092, Russia |
| F-I/P20 | SURFACE RECRYSTALIZATION CHARACTERIZATION METHOD FOR ANNEALED BF2 ION IMPLANTAED, I. Cernica, E. Manea, Institute of Microtechnology, P.O. Box 30-168, Bucharest, Romania ; L. Kulyuk, V. Tsytsanu, I. Olaru, Institute of Applied Physics, Kishinew, Moldova |
| F-I/P21 | NEW TECHNIQUE FOR OPTIMIZING TECHNOLOGICAL PROCESSES, A.Ya. Gubenko, Moscow Institute of Electronics and Mathematics, ul. Kuusinena 25-62, Moscow 125252, Russia |
| F-I/P22 | STRUCTURAL INSTABILITY OF ION BEAM MIXED Au/Si(111) SYSTEM AT THE ELEVATED TEMPERATURES, D.K. Sarkar, S. Dhara*, A. Gupta**, K.G.M. Nayer* and S. Chaudhury*** ; Department of Phasics, Technical University, 09107 Chemnitz, Germany ; * Materials Science Divisions, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 India ; **IUC-DAEF, University campus, Khandwa Road, Indore 452 001, India ; ***Department of Physics, University of Kalyani, Kalyani 741 235, India |
| F-I/P23 | DEFECTS IN SI/COSI2/SI HETEROSTRUCTURES FORMED BY IBS, Yu.N.Parkhomenko, L.V. Kozhitov, A.V.Bozhenov, K.D.Chtcherbatchev, E.A. Vygovskaya, Moscow State Institute of Steel and Alloys, Leninskii pr. 4, 117936 Moscow, Russia |
| F-I/P24 | NUMERICAL SIMULATION OF LONG-TERM CONDUCTIVITY RELAXATION PROCESSES IN SILICON UNDER EFFECT OF IRRADIATION, P.M. Gorley, M.V. Vozny, Department of Physical Electronics, Chernivtsi State University, 2 Kotsyubynsky St., 274012 Chernivtsi, Ukraine; R. Ciach, Z. Swiatek, Institute for Metallurgy and Material Science of Polish Academy of Science, 25 Reymonta St., 30-059 Cracow, Poland and Z. Kuznicki, CNRS Laboratory PHASE (UPR 292), BP 20, 67037 Strasbourg Cedex 2, France |
| F-I/P25 | DEGRAGDATION AND PASSIVATION OF PHOTOVOLTAIC MULTICRYSTALLINE SILICON CHARACTERIZED BY TH EELCTRON BEAM INDUCED CURRENT TECHNIQUE,A. Rivière, M. Barbé, J. Boudaben, A. Correia and D. Ballutaud, Laboratoire de Physique des solides, CNRS, A Place Aristide Briand, 92195 Meudon Cedex, France |
| F-I/P26 | ENHANCING THE BREAKDOWN FIELDS OF SI SCHOTTKY DIODES BY ION BEAM MODIFICATION, M.H. Joo*, S. Im*, and J.H. Song**, *Department of Metallurgical Engineering, Yonsei University, Seaoul, 120-749, Korea, **Advanced Analysis Center, Korea Institute of Science and Technology, Seoul, 130-650, Korea |
| F-I/P27 | EFFICIENCY OF CAVITY GETTTERING IN SINGLE AND MULTICRYSTALLINE SILICON WAFERS, S. Martinuzzi, N. Gay-Henquinet and I. Périchaud, University of Marseille, 13397 Marseille Cedex 20, France |
| F-I/P28 | QUANTITATIVE OPTICAL VARIANTS OF DEEP LEVEL TRANSIENT SPECTROSCOPY : APPLICATION TO HIGH PURITY GERMANIUM, A. Blondeel and P. Clauws, Universiteit Gent, Department of Solid State Sciences, Krijgslaan 281/Sl, 9000 Gent, Belgium. |
| F-I/P29 | HIGH RESOLUTION ON THE INTERFACE TRAP TIME CONSTANT AND CAPTURE CROSS SECTION USING CONDUCTANCE TECHNIQUE ON METAL-OXIDE-SEMICONDUCTOR STRUCTURES, E. Duval*, L. Soliman*, G. Sarrabayrouse**, K. Ketata*, M. Benzohra*,**, M. Ketata* and A. Martinez**,***; *LEMI-UPRES.EA2654-IUT, Université de Rouen, 76131 Mont-Saint-Aignan Cedex, France; **LAAS-CNRS, 7 Avenue du Colonel Roche, 31077 Toulouse Cedex, France; ***INSA, Complexe Scientifique de Rangueil, 31400 Cedex, France |
| F-I/P30 | INVESTIGATION OF THE SOLAR CELL EMITTER QUALITY BY LBIC-LIKE IMAGE TECHNIQUE, S. Litvinenko, V. Skryshevsky, V. Strikha, S. Kolenov, E. Smirnov, S. Kilchitskaya, Radiophysics Department, Kiev Shevchenko University, 64, Volodimirskaya, 252017 Kiev, Ukraine and A. Laugier, Laboratoire de Physique de la Matiere, Bat.502, 20 av. A.Einstein, INSA, 69621 Villeurbanne Cedex, France |
| F-I/P31 | CHARACTERIZATION OF HYDROGEN-PASIVATED SILICON SURFACES BY STM, J. Herion, Ch. Ross, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany |
| F-I/P32 | NEW RADIATION BAND OF BOUND EXCITONS IN ZnSe CRYSTALS, A.A. Klyukanov, K.D. Sushkevich, A.Z. Awawdeh, Department of Physics, Moldova State University. Mateevich str. 60, 2009 Chisinau, R. Moldova and V.S. Vavilov, M.V. Chukichev, R.R. Rezvanov, Moscow State University, 117234 Moscow, Russia. |
| F-I/P33 | DETERMINATION OF DIFFRACTION PARAMETERS OF STRUCTURE PERFECTION OF SILICON MONOCRYSTALS WITH DISTORTED SURFACE LAYERS BY TRIPLE-CRYSTAL X-RAY DIFRACTOMETRY, N.N. Novikov, V.G. Sushko, P.A. Teselko, Physical Faculty, Kiev Taras Shevchenko University, Glushkova prospect, 6, 252022 Kiev, Ukraine |
| F-I/P34 | APPLICATION OF INDUCED GYROTROPY IN CdS FOR REGISTRATION OF CRYSTAL DEFECTS, I.A. Iliev, T.N. Dimov, N.M. Uzunov, Shumen University "Bishop Konstantin Preslavsky", Department of Phsyics, 9700 Shumen, Bulgaria |
| F-I/P35 | STUDY OF POINT DEFECTS AND FREE CARRIER CONCENTRATION INFFLUENCE ON THE Sn IONS SYMMETRY IN THE Pb1-XSnxTe CRYSTALS BY MEANS OF THE 119Sn MÖSSBAUER SPECTROSCOPY, D.M. Zayachuk, Semiconductor Electronics Dept., State University "Lvivska Polytecnica", 12 Bandera Street, 290646 Lviv, Ukraine, V.I. Mikityuk, Physics Electronics Dept., Chernivtsy State University, 2 Kotsyubynsky Street, 274012 Chernivtsy, Ukraine and D. Baltrunas, Institute of Physics, 12 Gostauto Street, 2600 Vilnius, Lithuania |
Thursday June 3, 1999 - Morning
Jeudi 3 juin 1999, Matin
| F-VI.1 | 8:30-9:05 | Invited | DEFECTS IN EPITAXIAL Si-Ge ALLOY LAYERS, A. Nylandsted Larsen, Institute of Physics and Astronomy, Univerity of Aarhus, 8000 Aarhus C, Denmark |
| F-VI.2 | 9:05-9:25 | RELAXED SiGe BUFFER LAYER GROWTH WITH POINT DEFECT INJECTION, K. Lyutovich, E. Kasper, M. Bauer, and M. Oehme, University of Stuttgart, Institut für Halbleitertechnik, Pfaffenwaldring 47, 70569 Stuttgart, Germany | |
| F-VI.3 | 9:25-9:45 | RELAXATION OF SiGe RELAXED BUFFERS GROWN AT VERY HIGH RATES, C. Rosenblad*, E. Müller*, H. von Känel*, J. Stangl**, G. Bauer**, *ETH Zürich, 8093 Zürich, Switzerland, **Institut für Halbleiterphysik, Johannes Kepler Universität Linz, 4040 Linz, Austria | |
| F-VI.4 | 9:45-10:05 | STRAIN RELAXATION IN Si1-x-yGexCy EPILAYERS AFTER THERMAL REACTION WITH Zr AND Ti, V. Aubry-Fortuna, G. Tremblay, F. Meyer, Y. Miron*, A. Eytal*, M. Eizenberg*, U. Hörmann**, H.P. Strunk**, O. Chaix-Pluchery***, Institut d’Electronique Fondamentale, CNRS UMR 8622, Bat. 220, Université Paris Sud, 91405 Orsay Cedex, France, *Solid State Institute, Technion Haifa 32000, Israel, **Institut für Werkstoffwissenschaften, Universität Erlangen-Nürnberg, Cauerstraße 6, 91058 Erlangen, Germany, ***LMGP, CNRS UMR 5628, ENSPG, BP75, 38402 St Martin d’Hères, France | |
| 10:05-10:35 | BREAK |
| F-VII.1 | 10:35-11:10 | Invited | DO WE REALLY UNDERSTAND DISLOCATIONS IN SEMICONDUCTORS, R. Jones, Department of Physics, University of Exeter, Stocker Road, Exeter, EX4 4QL, UK |
| F-VII.2 | 11:10-11:30 | TEM OBSERVATION OF MICROSTRUCTURAL DEFECTS IN ALUMINIUM NITRIDE AFTER HIGH TEMPERATURE DEFORMATION, J.-P. Michel, V. Feregotto, A. George, Laboratoire de Physique des Materiaux, Ecole des Mines, Parc de Saurupt, 54042 NANCY Cedex, France | |
| F-VII.3 | 11:30-11:50 | TEM STUDY OF THE STRUCTURAL DEFECT DEPENDANCE ON THE POST-GROWTH ANNEALING IN GaAs-on-Si THIN FILMS, Ch.B. Lioutas and A. Georgakilas, Aristotle University of Thessaloniki, Department of Physics, GR-54006 Thessaloniki. | |
| F-VII.4 | 11:50-12-10 | DISLOCATION PHOTOLUMINESCENCE IN CADMIUM TELLURIDE AND CADMIUM SELENIDE, N.I. Tarbaev, and G.A. Shepelskii, Institute of Semiconductor Physics of Ukrainian National Academy of Science, 52650 Kiev 28, Ukraine | |
| 12:10-13:30 | LUNCH |
Thursday June 3, 1999 - Afternoon
Jeudi 3 juin 1999, Après-midi
| F-VIII.1 | 13:30-14:05 | Invited | FORMATION AND ANNIHILATION OF OXYGEN DONORS IN MULTICRYSTALLINE SILICON FOR SOLAR CELLS, C. Haessler, W. Koch, H.-U. Hoefs, Bayer AG, 47812 Krefeld, Germany |
| F-VIII.2 | 14:05-14:25 | HIGH RESOLUTION LIFETIME SCAN MAPS OF SILICON WAFERS, O. Palais, J. Gervais, and S. Martinuzzi, University of Marseilles, 13397 Marseille Cedex 20, France | |
| F-VIII.3 | 14:25-14:45 | SPATTIALLY RESOLVED DEFECT DIAGNOSTICS IN MULTI-POLY-CRYSTALLINE SILICON FOR SOLAR CELLS, I. Tarasov*, S. Ostapenko*, C. Haessler**, E.-U. Reisner**, *University of South Florida, 4202 Fowler Ave., Tampa Florida, USA, **BAYER AG, 47812 Krefeld, Germany | |
| F-VIII.4 | 14:45-15:05 | DOPANT DIFFUSION DUE TO RAPID THERMAL OXIDATION, C. Fink, K.G. Anil, P.Bieringer, W. Hansch, J. Schulze, A. Stadler, T. Sulima, I. Eisele, Institut of Physics, University of Federal Armed Forces, 85577 Neubiberg, Germany | |
| F-VIII.5 | 15:05-15:25 | LEAKAGE CURRENT INDUCED IN ULTRATHIN OXIDES ON (100) SI BY DEEP-UV-PHOTONS, V.V. Afanas’ev and A. Stesmans, University of Leuven, Celestijnenlaan 200D, 3001 Leuven, Belgium | |
| 15:25-15:55 | BREAK |
15:55-18:20
Heat - treatment and oxydation - Growth Induced Defects and Interfaces
| F-II/P1 | STUDY OF SILVER AND COPPER DIFFUSION IN p-TYPE Hg0.3Cd0.7Te AND CdTe BY CAPACITANCE MEASUREMENTS, B.O. Wartlick, C. Blanchard, J.F. Barbot. Laboratoire de Métallurgie Physique, UMR6630 CNRS, Université de Poitiers, SP2MI, Bd3, Téléport 2, 86960 Futuroscope Cedex, France. |
| F-II/P2 | DEFECTS INDUCED BY TRANSITION METALS (Cu, Ag) IN ZINC SELENIDE, D. Nedeoglo, V. Kasiyan, N. Nedeoglo, Department of Semiconductor Physics, State University of Moldova, 60, A.Mateevich str., MD-2009 Kishinau, Moldova |
| F-II/P3 | PHOTOSTIMULATED TRANSFORMATION OF DEFECTS IN CADMIUM IODIDE WITH COPPER AND COACTIVATORS. V.Bondar, Lviv State University, Department of Physics, 50 Dragomanov Str., 290005, Lviv, Ukraine. |
| F-II/P4 | Ta AS DIFFUSION BARRIER LAYER BETWEEN Cu AND Si: FAILURE MECHANISM AND EFET OF OXYGEN, K.-M. Yin, F.-R. Chen, J.J. Kai, C.C. Chiang, Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan 300, Republic of China; L. Chang, Department of Materials Science and Engineering, National Chiaotung University, Hsinchu, Taiwan 300, Republic of China; P.J. ding, H. Zang, B. Chin, F.S. Chen, Metal Deposition Products Group, Applied Materials, Santa Clara CA 95054, USA |
| F-II/P5 | ABOUT THE BEHAVIOR OF Cu RELATED DEFECT CENTERS IN Si<Pt, Cu>, M. Yunusov, M. Karimov, R.N. Khamraeva, M.N. Alikulov, Institute of Nuclear Physics, 702132 Ulughbek, Tashkent, Uzbekistan |
| F-II/P6 | COMPARISON OF ELECTRONIC STRUCTURE AND PROPERTIES OF HYDROGEN-ASSOCIATED AND THERMAL DOUBLE DONORS IN SILICON, B.M. Mukashev, Kh.A.A. Abdullin, Yu.V. Gorelkinskii, S.ZH. Tokmoldin, Institute of Physics and Technology, 480082 Almaty, Kazakstan and B. Pajot, Groupe de Physique des Solides, Tour 23, Université Denis Diderot, 2 place Jussieu, 75251 Paris Cedex 05, France |
| F-II/P7 | NUMERICAL MODELLING OF HYDROGEN PASSIVATION PROCESSES OF SILICON, P.M. Gorley, M.V. Vozny, Department of Physical Electronics, Chernivtsi State University, 2 Kotsyubynsky St., 274012 Chernivtsi, Ukraine; R. Ciach, Z. Swiatek, Institute for Metallurgy and Material Science of Polish Academy of Science, 25 Reymonta St., 30-059 Cracow, Poland and Z. Kuznicki, CNRS Laboratory PHASE (UPR 292), BP 20, 67037 Strasbourg Cedex 2, France |
| F-II/P8 | DISSOCIATION OF IRON RELATED CENTERS IN Si STIMULATED BY HYDROGEN, O.V. Feklisova, A.L. Parakhonsky, E.B. Yakimov, IPTM RAS, Chernogolovka, 142432 Russia; J. Weber, MPI-FKF Stuttgart, 70506 Stuttgart, Germany. |
| F-II/P9 | ABOUT THE BEHAVIOUR OF Pt AND Zn CENTERS IN SILICON DOPED BY GERMANIUM, M. Yunusov, M. Karimov, R.N. Khamraeva, M.N. Alikulov, Institute of Nuclear Physics, 702132 Ulughbek, Tashkent, Uzbekistan |
| F-II/P10 | INFLUENCE OF HEAT TREATMENT ON THE PHOTOCONDUCTIVITY OF SILICON WITH ZINC CENTERS, E.V. Astrova, V.B. Voronkov, A.A. Lebedev, A.N. Lodygin, A.D. Remenyuk, Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St.Petersburg, Russia |
| F-II/P11 | INTERACTION OF GOLD WITH DISLOCATIONS IN Si, B. Pichaud, G. Mariani-Regula, Lab. MATOP, Univerity Aix-Marseille III, 13397 Marseille Cedex 20, France and E.B. Yakimov, IPMT RAS, Chernogolovka 142432, Russia |
| F-II/P12 | PHOTOINDUCED SURFACE MICRODEFORMATIONS OF CHALCOGENIDE SEMICONDUCTORS: MECHANISM AND APPLICATIONS, V. Bivol and A. Andries, Center of Optoelectronics of Academy of Sciences of Moldova, 1 Academiei Str., 2028 Chisinau, Moldova Republic |
| F-II/P13 | GENERATION OF ONE-DIMENSIONAL STRUCTURES OF POINT DEFECTS IN THE SEMICONDUCTOR CRYSTALS DURING MECHANICAL PROCESSING AND STRESS, G.A. Shepelskii and N.I. Tarbaev, Institute of Semiconductor Physics of Ukrainian National Academy of Science, 252650 Kiev-28, Ukraine. |
| F-II/P14 | OXYGEN AND PECULIARITY OF ITS PRECIPITAtION IN Si1-xGex, L. Khirunenko, Yu. Pomozov, M. Sosnin, Institute of Physics of Ukrainian NAS, Pr. Nauki 46, 252650 Kiev, Ukraine and N. Abrosimov, W. Shroder, Institute of Crystal Growth, Rudower Chaussee 6, 12489 Berlin, Germany |
| F-II/P15 | TECHNOLOGICAL ANNIHILATION FOR HEAT TREATMENTS INDUCED NITROGEN-RELATED SHALLOW THERMAL DONOR IN NITROGEN-CONTAINING CZOCHRALSKI SILICON, Zhang Xiwen, Yang Deran and Que Duan Lin, State Key Laboratory of Silicon Materials Science, Zhejiang University, Hangzhou 310027, P.R. China |
| F-II/P16 | INCREASE OF DISLOCATION MOBILITY BY HEAT TREAT-MENT OF THE DEFORMED PURE AND DOPED InP CRYSTALS, D.Z. Grabko, N.A. Palistrant, Institute of Applied Physics, Academy of Sciences, Academy str.5, 2028, Chisinau, Moldova |
| F-II/P17 | Si- 100 SURFACE DEFECTS AFTER EXTENDED HIGH-TEMPERATURE ANNEALING, D. Barge, I.P. Joly, LETI Laboratory, 17 rue des Martyrs, 30854 Grenoble Cedex, France; B. Pichaud, MAT0P Laboratory, 13397 Marseille Cedex 20, France |
| F-II/P18 | OPTICAL INVESTIGATION OF GaAs SINGLE CRYSTAL SURFACE IRRADIATED BY IR-LASER LIGHT, P. Kosoboutski, V. Gaba, A. Danylov, Department of Physics, State University "Lvivska Polytechnika", 12 Bandery Str., 290646 Lviv, Ukraine |
| F-II/P19 | POLISHING, CHEMICAL ETCHING AND THERMAL TREATMENT EFFECTS ON SURFACE AND ELECTRICAL PROPERTIES OF Er AND Nd-DOPED GaSb SUBSTRATES, J.L. Plaza and E. Dieguez, Departamento de Fisica de Materiales, Universidad Autonoma de Madrid, Cantoblanco, 28049 Madrid, Spain; P. Hidalgo, B. Mendez and J. Piqueras, Departamento de Fisica de Materiales, Universidad Complutense, 28040 Madrid, Spain |
| F-II/P20 | WET OXIDATION OF VIRGIN AND ION IMPLANTED 6H-SiC: STRUCTURAL AND ELECTRICAL CHARACTERIZATION, R. Nipoti, A. Parisini and G. Bartelucci, CNR-LAMEL, via Gobetti 101, 40129 Bologna, Italy |
| F-II/P21 | LASER INDUCED DEFECT FORMATION IN CdTe AND HgCdTe: PHASE TRANSITION EFFECT, Leonid A. Golovan1, Pavel K. Kashkarov1, Victor Yu. Timoshenko1,2 , Nicolai G. Chechenin and Boris A. Markov3 ( 1Moscow State Lomonosov University, Faculty of Physics and Nuclear Physics Institute, 119899 Moscow, Russia; 2Technische Universität München, Physik Department E16, 85747 Garching, Germany; 3Chelyabinsk State Technical University, Lenin Prospect 77, 454080 Chelyabinsk, Russia |
| F-II/P22 | UNSTABLE DEFECTS IN ANNEALED GROUP II-VI SEMICONDUCTORS, V. Valdna, J. Hiie and U. Kallavus, Tallinn Technical University, 5 Ehitajate Road, 19086 Tallinn, Estonia; R. Durst, Bruker AXS, Inc., 6300 Enterprise Lane, Madison WI 53719-1173, USA |
| F-II/P23 | ISOTHERMAL POST-GROWTH ANNEALING FOR TESTING DEFECTS IN SEMI-INSULATING WIDE-GAP MATERIALS, V. Babentsov, Institute for Physics of Semiconductors, pr. Nauki 45, Kiev 252028, Ukraine, V. Corregidor, J.L. Castano, E. Dieguez, Universidad Autonoma de Madrid, Cantoblanco 28049, Spain; M. Fiederle, T. Feltgen, K.W. Benz, Kristallographisches Institut, Universitat Freiburg, Stefan-Meiler-Strasse 21, 79104 Freiburg, Germany |
| F-II/P24 | ORIGIN OF CRYSTALLINE DEFECTS OBSERVED AFTER KOH ETCHING OF MICROMECHANICAL SENSORS, R. Paneva, X-FAB GmbH, Haarbergstr. 61, 99097 Erfurt, Germany |
| F-II/P25 | EFFECT OF THE Si WAFER PRETREATMENT ON THE PATERNED SUBSTRATE MORPHOLOGY AND GROWTH OF Hg1-xCdxTe PLD FILMS, T.Ya Gorbach, R. Yu. Holiney, L.A. Matveeva, S.V. Svechnikov, E.F. Venger, ISP NASU, prospect Nauki 45, 252028 Kyiv, Ukraine, M. Kuzma, G. Wisz, Institute of Physics, Higher Pedagogical School, Rejtana 16a, 35-309 Rzeszow, Poland |
| F-II/P26 | DEEP LEVELS IN OXYGEN DOPED EFG POLY-Si, V. Borjanovic, I. Kovacevic* and B. Pivac*, Faculty for Elecrical Engineering and Computing, Unska 11, 10000 Zagreb, Croatia, * R. Boskovic Institute, P.O. Box 1016, 10000 Zagreb, Croatia |
| F-II/P27 | NATIVE POINT DEFECTS EQUILIBRIA AND CALCULATION OF GaAs HOMOGENEITY REGION, V.M. Glazov, L.M. Pavlova, Department of Physical Chemistry, Moskow Institute of Electronic Engineering, Techn. Univ., 103498 Moscow, Russia |
| F-II/P28 | COMPENSATION ORIGINS IN U-VI CDTE AND CZT MATERIALS, M. Hage-Ali, *S. Mergui, A. Zumbiehl, M. Ayoub, P. Fougeres,**Y.Darici, P. Siffert, Laboratoire PHASE, 23, rue du Loess, 67037, Strasbourg Cedex 2, France,*Electrical Engineering Department, Florida International University, Miami FL 33199, USA, **Physics Department, Florida International University, Miami, FL 33199, USA. |
| F-II/P29 | DIFFERENT TECHNIQUE FOR Ga DOPING LEAD TELLURIDE THIN FILMS ON Si SUBSTRATES, Y.A. Ugai, A.M. Samoylov, Yu. V Synorov, M.K. Sharov, Voronezh State University, Universitetskaya Sq. 1, 394693 Voronezh, Russia |
| F-II/P30 | OPTICAL AND ELECTRICAL PROPERTIES OF ZnO PREPARED BY PULSED LASER DEPOSITION, B.J. Jin, S. Im, S.Y. Lee* and J.H. Song**; Department of Metallurgical Engineering, Yonsei University, Seoul 120-749, Korea; *Department of Electrical Engineering, Yonsei University, Seoul 120-749, Korea; **Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 130-650, Korea |
| F-II/P31 | ELECTRON-MICROSCOPY OBSERVATION OF THE STRUCTURE DEFECTS IN THE InP AND GaP CRYSTALS, R.P. Zhitaru, V.A. Rahvalov, Institute of Applied Physics, Academy of Sciences, Academy str. 5, 2028 Kishinev, Moldova |
| F-II/P32 | INFLUENCE OF THE SURFACE DEFORMATION EFFECTS OF THE CdTe SINGLE CRYSTALS O PROPERTY OF Cu-pCdTe CONTACT, V.O. Ukrainets, R.M. Peleshchak, G.A. Ilchuk, N.A. Ukrainets, B.A. Lukiyanets, Department of Physics, State University "Lvivs’ka Polyteknika", 12 Bandera str., 290646 Lviv, Ukraine |
| F-II/P33 | DETERMINATION OF THE STRESS AT Si-SiO2 INTERFACE USING THE METHOD OF SiO2 SWELLING THAT IS THERMICALLY GROWN, S. Iovan and M.L. Grecea, National Institute for R&D in Microtechnologies (IMT), PO Box 38-160, 72225 Bucharest, Romania |
| F-II/P34 | ZnCdHgTe EPILAYER INTERFACE PROPERTIES, G.Khyap, Pedagogical University, 24 Franko str., Drogobych 293720, Ukraine |
| F-II/P35 | GENERATION OF INTERFACE STATES IN a-SiC/Si O2 BY ELECRON INJECTION, V.V. Afanas’ev and A. Stesmans, University of Leuven, Celestijnenlaan 200D, 3001 Leuven, Belgium |
| F-II/P36 | NITROGEN INDUCED STATES AT THE CNx/Si INTERFACE, E. Evangelou, N. Konofaos, Applied Physics Laboratory, Physics Department, University of Ioannina, 45110 Ioannina, Greece and M. Gioti, S. Logothetidis, Physics Department, Aristotle University of Thessaloniki, 54006 Thessaloniki, Greece |
| F-II/P37 | PROPERTIES OF AMORPHOUS Si-RICH SiNx PREPARED BY RF MAGNETRON SPUTTERING, M. Vetter, M. Rojahn, Institut für Physikalische Elektronik, Universität Stuttgart, Allmandring 19, 70569 Stuttgart, Germany. |
| F-II/P38 | GENERATION OF ELECTRIC CENTRES IN A SEMICONDUCTOR BY LIGHT RAY, A. Medviv', Riga Technical University, 1658 Riga, 1a Kalku Str. Latvia. |
Friday June 4, 1999 - Morning
Vendredi 4 juin 1999, Matin
| F-IX.1 | 8:30-9:05 | Invited | DEFECT CONTROL IN LT GaAs, E.R. Weber, P. Specht, R.C. Lutz, R. Zhao, W.K. Liu*, Department of Materials Science and Engineering, University of California, 587 Evans Hall, Berkeley, CA 94720, USA ; *Quantum Epitaxial Design, Bethlehem PA18015, USA |
| F-IX.2 | 9:05-9:40 | Invited | HYDROGEN AND DOPING ISSUES IN WIDE BAND GAP SEMICONDUCTORS, J. Chevallier, Laboratoire de physique du solide, Bellevue CNRS, 1, place Aristide Briand, 92195 Meudon Cedex, France |
| F-IX.3 | 9:40-10:00 | HYDROGEN-INDUCED DEFECTS AND THEIR ROLE IN DOPING DIAMOND, L.Y.S. Pang, H.J. Looi, O. Williams, R. B. Jackman and J.S. Foord*, Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E, UK, *Physical and Theoretical Chemistry, university of Oxford, South Parks Road, Oxford, OX1 3QZ, UK | |
| 10:00-10:30 | BREAK |
| F-X.1 | 10:30-11:05 | Invited | DEFECT SPECTROSCOPY IN THE NITRIDES, B.K. Meyer, 1. Physikalisches Institut, Heinrich Buff Ring 16, 35392 Gießen, Germany |
| F-X.2 | 11:05-11:25 | INTERFACIAL SEGREGATION OF DOPANTS AND DEFECTS IN AlN/GaN, P.Boguslawski, Instytut Fizyki PAN, Al. Lotnikow 32/46, 02-668 Warsaw, Poland and J. Bernholc, NCSU, Raleigh NC 27695, USA | |
| F-X.3 | 11:25-11:45 | METALLIZATION INDUCED DEEP LEVEL DEFECTS IN EPITAXIALLY GROWN n-TYPE GaN, F.D. Auret, S.A. Goodman, F.K. Koshnick*, J.-M. Spaeth*, B. Beaumont** and P. Gibart**, Department of Physics, University of Pretoria, South Africa, *Fachbereich Physik, Universität GH Paderborn, Paderborn, Germany, **CRHEA-CNRS, Valbonne, France |
End of Symposium F
