SYMPOSIUM
E - Advances in Silicon Substrates
Symposium Organizers:
Alessandro BORGHESI, Dipt di Scienza dei Materiali, Universita' di Milano, Milano, Italy
Cor CLAEYS, IMEC, Heverlee, Belgium
Jan VANHELLEMONT, Wacker Siltronic AG, Central R&D, Burghausen, Germany
The assistance provided by Gruppo Nazionale di Struttura della Materia- CNR Italy is acknowledged with gratitude.
Tuesday, June 1, 1999 - Morning
Mardi 1er juin 1999, Matin
| 9:00-9:10 | INTRODUCTORY REMARKS, A. Borghesi, C. Claeys, J. Vanhellemont | ||
| E-I.1 | 9:10-9:50 | -Invited- | HISTORICAL OVERVIEW OF SILICON CRYSTAL PULLING DEVELOPMENT, W. Zulehner, Wacker Siltronic AG, Postfach 1140, 84487 Burghausen, Germany |
| E-I.2 | 9:50-10:30 | -Invited- | THE FORMATION MECHANISM OF GROWN-IN DEFECTS IN CZ SILICON CRYSTALS BASED ON THERMAL GRADIENTS MEASURED BY THERMOCOUPLES NEAR GROWTH INTERFACES, Takao Abe, Shin-Etsu Handotai, Isobe R&D Center, Isobe 2-13-1, Annaka, Gunma 379-0169, Japan |
| 10:30-11:00 | BREAK |
| E-II.1 | 11:00-11:40 | -Invited- | PROGRESS TOWARD DETAILED SIMULATION OF MICRODEFECT DYNAMICS IN SILICON CRYSTAL GROWTH, T. Mori, T. Sinno, Z. Wang, and R.A. Brown, Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge MA 02139, USA |
| E-II.2 | 11:40-12:20 | -Invited- | GLOBAL MODEL OF OXYGEN TRANSPORT DURING CZOCHRALSKI GROWTH OF SILICON CRYSTALS, Yu. N. Makarov, Fluid Mechanics Institute,University of Erlangen-Nuernberg, Germany,E.A. Rudinsky, V. Kalaev, N. Ivanov and E.M. Smirnov, State Technical University, St. Petersburg, Russia, A.I. Zhmakin, A.F. Ioffe Physical Technical Institute, St. Petersburg, Russia, A. Krishnan, CFD Research Corporation, Huntsville, USA, E. Dornberger, J. Virbulis, E. Tomzig and W. v. Ammon, Wacker Siltronic, Burghausen, Germany |
| E-II.4 | 12:20-12:40 | NUMERICAL SIMULATION FOR SILICON CRYSTAL GROWTH OF UP TO 400MM DIAMETERS IN CZOCHRALSKI FURNACES, K.Takano, Y.Shiraishi, T.Iida, N.Takase, J.Matsubara, N.Machida, M.Kuramoto and H.Yamagishi, Super Silicon Crystal Research Institute Corp., Nakanoya 555-1, Annaka, Gunma, 379-0125, Japan | |
| 12:40-14:20 | LUNCH |
Tuesday June 1, 1999 Afternoon
Mardi 1er juin, 1999 Après-midi
| E-III.1 | 14:20-15:00 | -Invited- | NEW DEVELOPMENTS IN SILICON CZOCHRALSKI CRYSTAL GROWTH AND WAFER TECHNOLOGY, A. Mozer, Wacker Siltronic AG, P.O. Box 1140, 84479 Burghausen, Germany |
| E-III.2 | 15:00-15:20 | ULTRA-THIN TWIST BONDED SILICON WAFERS, F. Fournel, J. Eymery, J.-L. Rouvière, H. Moriceau*, B. Aspar*, CEA/Grenoble, DRFMC/SP2M and *LETI/DMITEC/SIA, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France | |
| 15:20-15:50 | BREAK |
| E-III.3 | 15:50-16:30 | -Invited- | VOIDS IN SILICON SUBSTRATES FOR NOVEL APPLICATIONS, V. Raineri, CNR - IMETEM, Stradale Primosole 50, 95121 Catania, Italy |
| E-III.4 | 16:30-16:50 | HELIUM DESORPTION FROM CAVITIES INDUCED BY HIGH ENERGY 3He+ AND 4He+ IMPLANTATIONS IN SILICON, S. Godey, E. Ntsoenzok, T. Sauvage, CNRS-CERI, 3A rue de la Férollerie, 45071 Orléans Cedex, France, A. van Veen, F. Labohm, Delft University of Technology, Mekelweg 15, 2629 JB Delft, The Netherlands, M.F. Beaufort, J.F. Barbot , L.M.P., UMR 6630 CNRS, SP2MI, Bd3 Téléport 2, 86960 Futuroscope Cedex, France | |
| E-III.5 | 16:50-17:10 | EPR STUDY OF He IMPLANTED Si, B. Pivac, R. Tonini*, F. Corni* and G. Ottaviani*, R. Boskovic Institute, P.O. Box 1016, 10000 Zabreg, Croatia; *Dipartimento di Fisica, Universita di Modena, 41100 Modena, Italy | |
| E-III.6 | 17:10-17:30 | HYDROGEN GETTERING AT POST-IMPLANTATION HYDROGEN PLASMA TREATMENTS OF HELIUM IMPLANTED CZOCHRALSKI SILICON, A.G. Ulyashin, A.I. Ivanov, Device Performance Department, Belarussian State Polytechnical Academy, Skariny Ave. 65, 220027, Minsk, Belarus, R. Job, W.R. Fahrner, Department of Electrical Engineering, University of Hagen, Haldener Str. 182, 58084 Hagen, Germany, F.F. Komarov, A.V. Frantskevich, Department of Physical Electronics, Belarussian State University, Kurchatova 4, 220064, Minsk, Belarus |
Wednesday June 2, 1999 - Afternoon
Mercredi 2 juin, 1999, Après-midi
14:30-17:30
| E/P1 | EFFECT OF EXTERNAL STRESS ON CREATION OF BURIED SiO2 LAYER IN SILICON IMPLANTED BY OXYGEN, A. Misiuk, Jan Jun, W. Jung, J. Ratajczak, M. Rozental, Institute of Electron Technology, Al. Lotnikow 46, 02-668 Warsaw, Poland; B. Surma, IEMT, 01-919 Warsaw, Poland; J. Bak-Misiuk, IP PAS, 02-668 Warsaw, Poland; M. Lopez, A. Romano-Rodriguez, University of Barcelona, 08028 Barcelona, Spain; I.V. Antonova, V.P. Popov, ISP RAS, 630090 Novosibirsk, Russia |
| E/P2 | HIGH EFFICIENT DIAGNOSTIC OF Si-WAFER SURFACE CONTAMINATION'S BY MODIFIED TXRF - METHOD, V.K. Egorov, O.S Kondratiev, A.P. Zuev, Lab. Nucl. Phys., IPMT RAS, 142432 Chernogolovka, Moscow dist., Institute prospect 19, Russia; E.V.Egorov, Department of Metal Phys., Moscow Engineering Physics Inst., Moscow, Russia |
| E/P3 | MBE GROWTH KINETICS OF Si ON HEAVILY-DOPED Si(111):P: A SELF-SURFACTANT EFFECT, A. Fissel and W. Richter, Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Paltz 1, 07743 Jena, Germany |
| E/P4 | STUDIES OF THE ENERGY STRUCTURE OF SOLIDS BY THE LOW-ENERGY ELECTRON SPECTROSCOPY TECHNIQUE, T.Yu. Popik, O.B. Shpenik, M.M. Erdevdy, V.M. Feyer, Institute of Electron Physics, Ukr. Nat. Acad. Sci., 21 Universitetska st., Uzhgorod 294016, Ukraine |
| E/P5 | STRUCTURAL TRANSFORMATIONS AT HEATING IN SILICON MONOCRYSTALS, V.M. Glazov, V.B. Koltsov, V.Z. Kutsova, A.R. Regel, Y.N. Taran, K.I. Uzlov, E.S. Falkevich, Department of Physical Chemistry, Moscow Institute of Electronic Engineering, Techn. Univ., 103498 Moscow, Russia |
| E/P6 | DONOR-ACCEPTOR INTERACTION IN A SOLID SOLUTION BASED ON GERMANIUM IN THE TRIPLE SYSTEM Ge-Cu-Sb, V.M. Glazov and A.Ya. Potemkin, Department of Physical Chemistry, Moscow Institute of Electronic Engineering, Techn. Univ., 103498 Moscow, Russia |
| E/P7 | QUANTITATIVE TOF-SIMS ANALYSIS OF METAL CONTAMINATION ON SILICON WAFERS, F. Zanderigo, S. Ferrari*, G. Queirolo and M. Borgini**, STMicroelectronis, Via Olivetti 2, 20041 Agrate Brianza (Milano), Italy; *Laboratorio MDM, Via Olivetti 2, 20041 Agrate Brianza (Milano), Italy; **MEMC, Via Gherzi 31, 28100 Novara, Italy |
| E/P8 | ANALYSIS OF TURBULENT FLOW IN SILICON MELTS BY OPTICAL TEMPERATURE MEASUREMENT, O. Gräbner, A. Mühe, H.-J. Axmann, G. Müller, Department of Materials Science (LS6), Crystal Growth Lab., University Erlangen-Nürnberg, Martenssstr. 7, 91058 Erlangen, Germany; W.v. Ammon, E. Tomzig, J. Virbulis, Wacker Siltronic AG, P.O. Box 1140, 84479 Burghausen, Germany |
| E/P9 | WET-CHEMICAL PASSIVATION OF Si(111)- AND Si(100)-SUBSTRATES, H. Angermann, W. Henrion, A. Röseler*, M. Rebien, Hahn-Meitner-Institut, Abt. Photovoltaik, Rudower Chaussee 5, 12489 Berlin, Germany; *Institut für Spektrochemie und Spektroskopie, Rudower Chaussee 5, 12489 Berlin, Germany |
| E/P10 | CROSS-SECTIONAL HRTEM INVESTIGATIONS OF THE INFLUENCE OF P+ IONS IMPLANTED IN THE Si SUBSTRATE ON THE ATOMIC INTERDIFFUSION IN THE Cr/Si SYSTEM, K. Mirouh, A. Bouabellou, R. Halimi, Unité de Recherche de Physique, Université Mentouri de Constantine, 25000, Algérie and A. Mosser, G. Ehret, J. Werckman, IPCMS-GSI, 23 rue du Loess, 67037 Strasbourg, France |
| E/P11 | STUDY OF THE EARLY STAGE KINETICS OF SOI FORMATION IN STIMULATED REGIMES, V. Litovchenko, B. Romanyuk, A. Efremov, V. Melnik, C. Claeys*,** and J. Vanhellemont*** ; Institute of Semiconductor Physics NAS of Ukraine, Kiev, Ukraine ; *IMEC, Kapeldreef 75, 3001 Leuven, Belgium ; **also at KU Leuven, ESAT-INSYS, Leuven, Belgium ; ***Wacker Siltronic, P.O. Box 1140, 84479 Burghausen, Germany |
| E/P12 | -- |
| E/P13 | LOW FREQUENCY NOISE LEFEL CHARACTERIZATION OF Ta SILICIDES, M. Stojanovic, Vinca Institute of Nuclear Sciences, PO Box 522, 11001 Belgrad, Yugoslavia and C. Jeynes, University of Surrey, Department of Electronic and Electrical Engineering, Guilford GU2 5XH, UK |
| E/P14 | PERPENDICULAR EXCITATION-PROBE MICROWAVE ABSORPTION TECHNIQUE FOR CARRIER LIFETIME ANALYSIS IN LAYERED Si STRUCTURES E.Gaubas1, E. Simoen2, C. Claeys2,3 and J. Vanhellemont4, 1Vilnius University, Institute of Material Research and Applied Sciences, Sauletekio av. 10, 2040, Vilnius, Lithuania. 2IMEC, Kapeldreef 75, 3001 Leuven, Belgium. 3also at KU Leuven, ESAT-INSYS, Leuven, Belgium. 4Wacker Siltronic AG, P.O. Box 1140, 84479, Burghausen, Germany |
| E/P15 | INFLUENCE OF CZOCHRALSKI SILICON CRYSTAL GROWTH ON WAFER QUALITY: AN EXTENSIVE INVESTIGATION USING TRADITIONAL AND NEW CHARACTERIZATION TECHNIQUES, M. Porrini, P. Collareta, MEMC Electronic Materials SpA,Via Nazionale 59, 39012 Merano, Italy G. Borionetti, D. Gambaro, I. Fini, MEMC Electronic Materials SpA,Viale Gherzi 31, 28100 Novara, Italy |
| E/P16 | KINETICS OF HETEROGENEOUS SiO2 PRECIPITATION IN THE PRESENCE OF LASER-INDUCED CENTRES, Yuris Blums, Technical Physics Institute, Riga Technical University, 1 a Kalku str., Riga LV 1658, Latvia |
| E/P17 | A NOVEL TECHNIQUE FOR ELECTRICAL CHARACTERIZATION OF DIRECTLY BONDED SI/SI STRUCTURES AND FOR QUANTITATIVE EVALUATION OF THEIR LATERAL INHOMOGENEITY, V.A. Stuchinsky and G. N. Kamaev, Institute of Semiconductor Physics, 13, Prosp. Acad. Lavrent'eva, 630090 Novosibirsk, Russia |
| E/P18 | INHOMOGENEITIES IN AXIAL AND RADIAL IMPURITY DISTRIBUTION UNDER SI MONOCRYSTALS GROWTH BY VERTICAL DIRECTIONAL CRYSTALLIZATION METHOD, Serov A.A., Zelenograd Scientifical Research Center "Elsov", 4 Zapadnyi Proezd, AO SKB NII "Vzlet", 103460, Moscow, Russia and Maslovsky V.M., Zelenograd State Research Institute Of Physical Problems, 103460, Moscow, Russia |
| E/P19 | ELLIPSOMETRY AND MICROSCOPY STUDY OF NANOCRYSTALLINE SI:H LAYERS FORMED BY HIGH-DOSE IMPLANTATION OF SILICON. V.P. Popov, I.V. Antonova, E.V. Spesivtsev, A.K. Gutakovskii, V.I. Obodnikov, Institute of Semiconductor Physics, RAS, Lavrentieva 13, 630090 Novosibirsk, Russia, I.I. Morosov, Institute of Nuclear Physics, 630090 Novosibirsk, Russia |
| E/P20 | NEW WAYS OF CONTROLLING DEFECTS IN CRYSTALS AND SUBSTRATES, A.Ya. Gubenko, Moscow Institute of Electronics and Mathematics, ul. Kuusinena 25-62, Moscow 125252, Russia |
| E/P21 | INFRARED CHARACTERIZATION OF OXYGEN PRECIPITATES IN SILICON WAFERS WITH DIFFERENT CONCENTRATION OF INTERSTITIAL OXYGEN, A. Borghesi, A. Sassela, INFM and Dipartimento di Scienza dei Materiali, Università di Milano "Bicocca", 20125 Milano, Italy, P. Geranzani, M. Porrini, MEMC Electronic Materials, 39012 Merano (BZ), Italy and B. Pivac, Rudjer Boskovic Institute, 10000 Zagreb, Croatia. |
| E/P22 | INFLUENCE OF DIFFERENT GROWTH AND NUCLEATION TIMES ON OPTICAL SPECTRA OF PRECIPITATED OXYGEN IN SILICON, A. Borghesi, A. Sassella, INFM and Dipartimento di Scienza dei Materiali, Università di Milano "Bicocca", 20125 Milano, Italy, M. Porrini, MEMC Electronic Materials, 39012 Merano (BZ), Italy, and M. Olmo, MEMC Electronic Materials, 28100 Novara, Italy |
| E/P23 | -- |
| E/P24 | -- |
| E/P25 | CHEMICALLY-INDUCED DISORDERING OF Si (100) SURFACES UPON SC1/SC2 ETCHING ANALYSED BY HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HRTEM), M. Bollani, L. Fares, A. Charad, Edifis UMR 6518, 13397 Marseille, France, and D. Narducci, Istituto Nazionale per la Fisica della Materia and Dept. Materials Science, v. R. Cozzi 53, 20126 Milan, Italy |
| E/P26 | -- |
| E/P27 | SIMULATION OF THE INFRARED RESPONSE OF OXYGEN PRECIPITATES IN SILICON, A. Sassella, INFM and Dipartimento di Scienza dei Materiali, Universit‡ di Milano ìBicoccaî, 20125 Milano, Italy |
| E/P28 | THERMAL HISTORY SIMULATION OF CZOCHRALSKI SILICON CRYSTALS AND ITS APPLICATION TO THE STUDY OF DEFECTS FORMATION DURING CRYSTAL GROWTH, P. Hopfgartner, P. Collareta and M. Porrini, MEMC Electronic Materials SpA, Via Nazionale 59, 39012 Merano, Italy |
| E/P29 | CHARACTERIZATION OF THE OXYGEN DISTRIBUTION IN CZOCHRALSKI SILICON BY ELECTRICAL MEASUREMENTS USING HYDROGEN ENHANCED THERMAL DONOR FORMATION, A.G. Ulyashin, Device Performance Department, Belarussian State Polytechnical Academy, Skariny Ave. 65, 220027 Minsk, Belarus; R. Job, W.R. Fahrner, Department of Electrical Engineering, University of Hagen, Haldener Str. 182, 58084 Hagen, Germany. |
| E/P30 | -- |
| E/P31 | EFFECT OF THE SILICON WAFER ORIENTATION ON THE PROPERTIES OF Si:Er:O LIGHT-EMITTING STRUCTURES, N. A.Sobolev, R.N.Kyutt, Y.A.Nikolaev, Ioffe Physicotechnical Institute, St.Petersburg 194021, Russia, A. M.Emel`yanov, St.Petersburg State Technical University, St.Petersburg 195251, Russia and V. I. Vdovin, Institute for Chemical Problems of Microelectronics, Moscow 109017, Russia |
| E/P32 | QUANTIFICATION OF ORGANIC CONTAMINANTS BY MEANS OF TOF-SIMS, S. Ferrari MDM-INFM, Via Olivetti 2, 20041 Agrate Brianza, Italy, F. Zanderigo and G. Queriolo, STMircoelectonics, Via Olivetti 2, 20041 Agrate Brianza, Italy and M. Borgini MEMC, via Gherzi 31, 28100 Novara, Italy |
| E/P33 | DETAILED MODELING OF CHEMICAL VAPOR DEPOSITION OF SILICON EPILAYERS FROM TRICHLOROSILANE ON 300 MM WAFERS IN CENTURA REACTOR, Y.N. Makarov, University of Erlangen-Nuernberg, Fluid Mechanics Institute, Cauerstr. 4, 91058 Erlangen, Germany, A.S. Segal, Institute of Fine Mechanics and Optics, 14 Sablinskaya st., 197101 St.Petersburg, Russia; A.O. Galyukov, Soft Impact Ltd, PO Box 29, 194156 St.Petersburg, Russia; A. Krishnan, CFD Research Corporation, 215 Wynn Drive, Huntsville, Alabama, USA, W. Siebert, Per-Ove Hansson, M. Fuerfanger, Wacker Siltronic AG, P.O. Box 1140, 84479 Burghausen, Germany |
| E/P34 | DEFECT GENERATION IN SILICON DURING PROXIMITY RAPID THERMAL DIFFUSION, M. Nolan, T. Perova, R.A. Moore, C.J. Moore, Dept. of Electronic & Electrical Eng., University of Dublin, Trinity College, Dublin 2, Ireland; H. Byrne, K. Berwick, Dublin Institute of Technology, Kevin St. , Dublin 8, Ireland and H.S. Gamble, Dept. of Electronic Eng., The Queen’s University of Belfast, Belfast, North Ireland |
Thursday June 3, 1999 - Morning
Jeudi 3 juin 1999, Matin
| E-IV.1 | 8:30-9:10 | -Invited- | FORMATION OF VOIDS AND OXIDE PARTICLES IN SILICON CRYSTALS, V.V. Voronkov, MEMC Electronic Materials, via Nazionale 59, 39012 Merano BZ, Italy |
| E-IV.2 | 9:10-9:30 | LOCALISED THICK SOI STRUCTURES FOR HIGH VOLTAGE INTEGRATED CIRCUITS, J.M. Dilhac, S. Roux*, M. Bafleur, G. Chritat, LAAS-CNRS, 7 avenue du colonel Roche, 31077 Toulouse Cedex 4, France; *MOTOROLA Semiconducteurs, Avenue du général Eisenhower, BP 1029, 31023 Toulouse Cedex, France | |
| E-IV.3 | 9:30-9:50 | INTERACTION OF DEUTERIUM WITH DEFECTS IN THE SILICON TOP LAYER OF SIMOX, A. Rivera, J.M.M. de Nijs, P. Balk, P.F.A. Alkemade, DIMES, Delft University of Technology, 2628 CT Delft, The Netherlands; A. van Veen, H. Schut, IRI, Delft University of Technology, 2629 JB Delft, The Netherlands | |
| E-IV.4 | 9:50-10:10 | PROPERTIES OF EXTREMELY THIN SILICON LAYER IN SILICON-ON-ISULATOR STRUCTURE FORMED BY SMART-CUT TECHNOLOGY, I.V. Antonova, V.P. Popov, V.F. Stas, L.V. Mironova, A.K. Gutakovskii, E.V. Spesivtsev, A.A.Franzusov Institute of Semiconductor Physics, RAS, Lavrentieva 13, 630090 Novosibirsk, Russia | |
| 10:10-10:40 | BREAK |
| E-IV.5 | 10:40-11:20 | -Invited- | THE CONTROL OF INTRINSIC POINT DEFECT CONCENTRATION IN SILICON: MICRODEFECT-FREE CRYSTAL GROWTH AND IDEAL OXYGEN PRECIPITATION BEHAVIOUR, R. Falster, MEMC Electronic Materials SpA, Viale Gherzi 31, 28100 Novara, Italy |
| E-IV.6 | 11:20-11:40 | GETTERING EFFICIENCIES OF POLYSILICON-, STACKING FAULT- AND HE-IMPLANTED BACKSIDES FOR Cu AND Ni, R. Hoelzl, K.-J. Range, Institute of Inorganic Chemistry, University of Regensburg, 83053 Regensburg, Germany; L. Fabry, J. Hage, Wacker Siltronic AG, BO Box 1140, 84470 Burghausen, Germany; V. Raineri, CNR-IMETEM, Stradale Primosole 50, I-95121 Catania, Italy | |
| E-IV.7 | 11:40-12:00 | THIN OXIDE RELIABILITY AND GETTERING EFFICIENCY IN ADVANCED SILICON SUBSTRATES, M.L. Polignano, G. Ghidini, L. Ceresara, F. Illuzzi, B. Padovani and F. Pellizzer, SGS-THOMSON Microelectronics, Via Olivetti 2, 20041 Agrate Brianza (Milano), Italy | |
| E-IV.8 | 12:00-12:20 | DENUDED ZONE EVALUATION OF RAPID THERMAL ANNEALED SILICON WAFERS, G. Kissinger, IHP, Walter-Korsing-Str. 2, 15230 Frankfurt (Oder), Germany, J. Vanhellemont, G. Obermeier and J. Esfandyari, Wacker Siltronic AG, P.O. Box 1140, 84479 Burghausen, Germany | |
| E-IV.9 | 12:20-12:40 | A STUDY ON OXYGEN-DISLOCATION INTERACTIONS IN CZ-Si, S. Senkader, K. Jurkschat, P.R. Wilshaw, Dept. of Materials, University of Oxford, Oxford, UK, and R. Falster, MEMC Electronic Materials SpA, Novara, Italy | |
| 12:40-14:20 | LUNCH |
Thursday June 3, 1999 - Afternoon
Jeudi 3 juin 1999, Après-midi
| E-V.1 | 14:20-15:00 | -Invited- | SUBSTRATE DEFECTS AFFECTING GATE OXIDE INTEGRITY, M. Itsumi, NTT Lifestyle and Environmental Technology Laboratories, Morinosato Wakamiya, Atsugi-Shi, Kanagawa 243-0198, Japan |
| E-V.2 | 15:00-15:20 | SILICON SUBSTRATE EFFECTS ON THE CURRENT-VOLTAGE CHARACTERISTICS OF ADVANCED p-n JUNCTION DIODES, A. Poyai*, E. Simoen*, C. Claeys*,** and A. Czerwinski***; *IMEC, Kapeldreef 75, 3001 Leuven, Belgium, **also at KU Leuven, ESAT-INSYS, Leuven, Belgium, ***Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warsaw, Poland | |
| E-V.3 | 15:20-15:40 | ELECTRONIC DEVICE FABRICATION BY SIMPLE HYDROGEN ENHANCED THERMAL DONOR FORMATION PROCESSES IN P-TYPE CZ-SILICON, R. Job, W. R. Fahrner, Department of Electrical Engineering, University of Hagen, Haldener Str. 182, 58084 Hagen, Germany, A. G. Ulyashin, Device Performance Department, Belarussian State Polytechnical Academy, Skariny Ave. 65, 220027, Minsk, Belarus | |
| E-V.4 | 15:40-16:00 | HEAT CAPACITY STUDYING OF SILICON IN THE RANGE 350 TO 770 K, V.M. Glazov, A.S. Pashinkin, M.S. Mikhilova, Department of Physical Chemistry, Moscow Institute of Electronic Engineering, Tech. Univ., 103498 Moscow, Russia | |
| 16:00-16:30 | BREAK |
| E-VI.1 | 16:30-16:50 | LOW TEMPERATURE SI-EPITAXY IN A VERTICAL LPCVD BATCH REACTOR, G. Ritter, B. Tillack*, T. Morgenstern*, G.R. Dietze** and H.C. Mollenkopf** ; Semitool Inc., Kalispell, MT-59901, USA ; *Institute for Semiconductor Physics, 15230 Frankfurt (Oder), Germany ; **Shin Etsu America Inc., Vancouver, WA 98682, USA | |
| E-VI.2 | 16:50-17:10 | EFFECT OF SURFACE TOPOLOGY OF AMORPHOUS SUBSTRATES ON THE GROWTH MECHANISM AND GRAIN SIZE OF APCVD GROWN SILICON FOR SOLAR CELLS, T. Kautzsch, A. Braun and H.G. Wagemann, IMF, TU Berlin, Jebensstr. 1, 10623 Berlin, Germany | |
| E-VI.3 | 17:10-17:30 | LARGE GRAINED POLYCRYSTALLINE SI FILMS OBTAINED BY SELECTIVE NUCLEATION AND SOLID PHASE EPITAXY, R.A. Puglisi, H. Tanabe, C.M. Chen and H.A. Atwater, Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena CA 91125, USA | |
| E-VI.4 | 17:30-17:50 | CRYSTAL RELATED DEFECTS EVOLUTION DURING THIN EPITAXIAL LAYER GROWTH ON SILICON WAFERS, G.Borionetti, D.Gambaro, S.Santi, M.Borgini, P.Godio MEMC Electronic Materials S.p.A. Viale Gherzi, 31, 28100 Novara,Italy and S.Pizzini, INFM and Department of Materials Science, Via Cozzi 53, 20125 Milano, Italy |
Friday June 4, 1999 - Morning
Vendredi 4 juin 1999, Matin
| E-VII.1 | 8:30-9:10 | -Invited- | OPTICAL ABSORPTION OF PRECIPITATED OXYGEN IN SILICON AT LIQUID HELIUM TEMPERATURE, A. Sassella, A. Borghesi, INFM and Dipartimento di Scienza dei Materiali, Università di Milano "Bicocca", 20125 Milano, Italy, G. Borionetti, MEMC Electronic Materials, 28100 Novara, Italy, and P. Geranzani, MEMC Electronic Materials, 39012 Merano (BZ), Italy |
| E-VII.2 | 9:10-9:30 | CHARACTERIZATION OF Si WAFERS BY µ-PCD WITH SURFACE ELECTRIC FIELD, M. Ichimura, M. Hirano*, A. Tada, E. Arai, H. Takamatsu**, and S. Sumie**, Depart. Elect. Comp. Eng.; Center Coop. Res., Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya 466-8555, Japan; **Process Technol. Res. Lab., Kobe Steel, LTD., Nishi-ku, Kobe 651-2271, Japan | |
| E-VII.3 | 9:30-9:50 | ADVANCES IN SILICON SURFACE CHARATERISATION USING LIGHT BEAM INJECTION TECHNIQUES, S. Pizzini, M. Acciarri, G. Barbi, S. Spadoni, A. Cavallini*, INFM and Department of Materials Science, Via Cozzi 53, 20126 Milano, Italy; *INFM and Department of Physics, Via Berti Pichat 6/2, 40137 Bologna, Italy | |
| 9:50-10:00 | BREAK |
| E-VII.4 | 10:20-10:40 | FINAL EVIDENCE FOR H TERMINATION OF HF-TREATED SI SURFACES: A COMPARATIVE STUDY BY HIGH-ENERGY AND VIBRATIONAL SPECTROSCOPIES, M. Bollani, Edifis UMR 6518, 13397 Marseille, France; M. Portail and J.M. Layet, UMR CNRS 6633, Université de Provence, 13397 Marseille, France; A. Charad, Edifis UMR 6518, 13397 Marseille, France; and D. Narducci, Istituto Nazionale per la Fisica della Materia and Dept. Materials Science, v. R. Cozzi 53, 20126 Milan, Italy | |
| E-VII.5 | 10:40-11:00 | MINORITY CARRIER LIFETIME OF P-TYPE SILICON CONTAINING OXYGEN PRECIPITATES: INFLUENCE OF INJECTION LEVEL AND PRECIPITATE SIZE/DENSITY, M. Porrini, MEMC Electronic Materials SpA,Via Nazionale 59, 39012 Merano, Italy and P. Tessariol, INFM Unita’ di Ricerca di Padova c/o Dipartimento di Fisica Universita’ di Padova, via Marzolo 8, 35131 Padova, Italy | |
| E-VII.6 | 11:00-11:20 | TEM CHARACTERISATION OF HIGH PRESSURE HIGH TEMPERATURE TREATED CZOCHRALSKI SILICON SAMPLES, A. Romano-Rodriguez, A. Bachrouri, M. Lopez, J.R. Morante, Dept. of Electronics, University of Barcelona, 08028 Barcelona, Spain; A. Misiuk, Institute of Electron Technology, 02-668 Warsaw, Poland, B. Surma, Institute of Electronic Materials Technology, 01 919 Warsaw, Poland and J. Jun, High Pressure Research Centre, Polish Academy of Sciences, 01 142 Warsaw, Poland | |
| E-VII.7 | 11:20-11:40 | CHARACTERIZATION OF EPITAXIAL LAYERS ON SILICON BY SPECTROSCOPIC ELLIPSOMETRY, G. Dittmar, B. Gruska SENTECH Instruments GmbH, Rudower Chaussee 6, 12484 Berlin, Germany | |
| 11:40-11:50 | CONCLUDING REMARKS, A. Borghesi, C. Claeys, J. Vanhellemont | ||
| 11:50 | LUNCH |
End of Symposium E
