SYMPOSIUM
D - Plasma & Ion Surface Engineering
Symposium Organizer:
A.P. WEBB , C. Phys. F. Inst P., GEC Marconi, Materials Technology Group, Caswell, Towcester, UK
Tuesday, June 1, 1999 - Morning
Mardi 1er juin 1999, Matin
| INTRODUCTION A.P.Webb, Marconi Materials Technology Caswell, UK |
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| D-I.1 | 9:30-10:10 | -Invited- | ELECTRICAL AND OPTICAL CHARACTERISATION OF A GEC REFERENCE CELL, B.Graham, Department of Pure and Applied Physics,The Queen's University, Belfast, Northern Ireland |
| D-I.2 | 10:10-10:30 | TIME-RESOLVED STUDY OF CXNY GROWTH BY MEANS OF FTIR REFLECTION SPECTROSCOPY, A. de Graaf, B. Schreur, M.C.M. van de Sanden, D.C. Schram, Eindhoven University of Technology, Department of Applied Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands | |
| D-I.3 | 10:30-10:50 | ENERGY SPECTRA OF PARTICLES BOMBARDING THE CATHODE IN GLOW DISCHARGES, C.V. Budtz-Jürgensen, J. Bottiger and P. Kringhoj, Institute of Physics and Astronomy, University of Aarhus, 8000 Aarhus C, Denmark | |
| 10:50-11:10 | BREAK | ||
| D-I.4 | 11:10-11:30 | MASS SPECTROMETER DIAGNOSTICS FOR IONS AND NEUTRAL SPECIES SAMPLED FROM TECHNOLOGICAL PLASMAS, J.A. Rees, C.L. Greenwood, P.A. Read and T.D. Whitmore, Hiden Analytical Ltd, UK | |
| D-I.5 | 11:30-11:50 | CHARACTERISATION OF THE EXPANDING THERMAL PLASMA USED FOR THIN FILM SOLAR CELL PRODUCTION, *B.A. Korevaar, A.H.M. Smets, W.M.M. Kessels, M.C.M. van de Sanden, and D.C. Schram, Dept. of Appl. Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands. | |
| 11:50-14:00 | LUNCH |
Tuesday June 1, 1999 - Afternoon
Mardi 1er juin 1999, Aprčs-midi
| D-II.1 | 14:00-14:40 | -Invited- | THIN FILM DIAMOND GROWTH BY MICROWAVE PLASMA ENHENCED CVD: OES AS AN IN SITY DIAGNOSTIC TOOL, M.D. Whitfild and R.B. Jackman, Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK and J.S. Foord, Physical and Theoretical Chemistry, University Oxford, South Parks Road, Oxford OX1 3QZ, UK |
| D-II.2 | 14:40-15:00 | ROLE OF THE GAS TEMPERATURE ON POWDER AND VOIDS FORMATION IN FILMS GROWN BY TH PECVD TECHNIQUE, R. Martins, V. Silva, H. Aguas, I. Ferreira and E. Fortunato, CENIMAT, Departamento de Ciencias dos Materias de Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa and CEMOP-UNINOVA, Quinta da Torre, 2825 Campus de Caparica, Portugal | |
| D-II.3 | 15:00-15:20 | GROWTH PRECURSORS IN A REMOTE SILANE PLASMA RELATED TO a-Si:H FILM QUALITY, W.M.M. Kessels, M.C.M. van den Sanden, A.H.M. Smets, B.A. Korevaar and D.C. Schram, , Dept of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands | |
| D-II.4 | 15:20-15:40 | CAVITY RING DOWN SPECTROSCOPY AS A PROBE FOR HYDROCARBON RADICALS DURING a-C:H DEPOSITIONS, K.G.Y. Letourneur, M. Boogaarts, M.C.M. van den Sanden and D.C. Schram, Eindhoven University of Technology, Dept of Applied Physics, P.O. Box 513, 5600 MB Eindhoven, The Netherlands | |
| 15:40-16:00 | BREAK | ||
| D-II.5 | 16:00-16:20 | PLASMA DIAGNOSTICS OF A PECVD SYSTEM USING DIFFERENT R.F. ELECTRODE CONFIGURATIONS, H. ˇguas, R. Martins, DCM/ Faculdade de CiÍncias e Tecnologia, Universidade Nova de Lisboa, 2825 Monte da Caparica, Portugal. | |
| D-II.6 | 16:20-16:40 | MULTI-PROBE INVESTIGATION OF PLASMA DISTRIBUTION IN A TRIPLE CATHODE VACUUM ARC DEPOSITION APPARATUS, V.N. Zhitomirsy, R. Ben-Ami, R.L. Boxman and S. Goldsmith, Electrical Discharge and Plasma Laboratory, Tel-Aviv University, PO Box 39040, Tel-Aviv 69978, Israel | |
| D-II.7 | 16:40-17:00 | PLASMA ANALYSER FOR PLASMA ASSISTED SURFACE PROCESS DIAGNOSTICS UP TO 100 MBAR, Sz. Kátai, Z. Tass, L. Bori, Gy. Hárs and P. Deák, Department of Atomic Physics, Technical University of Budapest, Budafoki út 8, 1111 Budapest, Hungary |
Wednesday , June 2, 1999 - Afternoon
Mercredi 2 juin 1999, Aprčs-midi
| Introduction | |||
| D-III.1 | 14:00-14:40 | -Invited- | MASS SPECTROMETRY AS A DIAGNOSTIC TOOL FOR THE UNDERSTANDING OF ETCHING MECHANISMS, Ch. Cardinaud, LPCM-IMN, 2 Rue de la Houssiničre, BP 32229, 44322 Nantes Cedex 03, France |
| D-III.2 | 14:40-15:00 | ETCHING OF Si1-xGex EPITAXIAL FILMS USING AN ECR CHLORINE PLASMA, Hajime Takeuchi, Takashi Matsuura, and Junichi Murota, Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan | |
| D-III.3 | 15:00-15:20 | ION-ION PLASMA FORMATION BY PULSED PLASMA ETCHING I.A. Movtchan, A.A. Kudryavtsev, Physics Institute, St.-Petersburg University, 1 Ulyanovskaya str., 198904, St.-Petersburg, Russia and I. Smurov, ENISE, 58 rue Jean Parot, 42023 St.-Etienne, France | |
| 15:20-15:40 | BREAK | ||
| D-III.4 | 15:40-16:00 | EFFECTS OF PLASMA CONDITIONS ON THE ETCH PROPERTIES OF GaN, AlGaN, AND InGaN, H. S. Kim, D. H. Lee, J. S. Kim, and G. Y. Yeom, Dept. of Materials Engineering, Sungkyunkwan University, Suwon, 440-746, Korea, J. W. Lee and T. I. Kim, Photonics Lab., Samsung Advanced Institute of Technology, Suwon, 440-600, Korea | |
| D-III.5 | 16:00-16:20 | INVESTIGATION OF THIN FILM ETCHING MECHANISMS DURING THE PATTERNING OF MEMS LAYERS WITH A ECR ION GUN, J. Baborowski, N. Ledermann, P. Miralt, Laboratoire de Céramique, Swiss Federal Institute of Technology, EPFL, Lausanne, Switzerland | |
| D-III.6 | 16:20-16:40 | APPLICATION OF CCl2F2- AND CCl4-BASED PLASMAS FOR RIE OF GaSb AND RELATED MATERIALS, A. Piotrowska, E. Kaminska, T.T. Piotrowski, K. Golaszewska, E. Papis, Institute of Electron Technology, Al. Lotników 46, 02-668 Warsaw, Poland |
Poster Session
| D/P1 | RESEARCH ON PHYSICO-CHEMICAL BASES OF THE ION NITRIDING PROCESS CONTROL WITH THE USE OF PLASMA SPECTROSCOPIC DIAGNOSTICS, J. Walkowicz, J. Smolik, K. Miernik, Institute for Terotechnology, ul.Pulaskiego 6/10, 26-100 Radom, Poland |
| D/P2 | DEVELOPMENT OF NEW TECHNIQUE OF ION-PLASMA SPUTTERING, V.Bondar, M. Ya. Vasyliv, Y.Dubov. Lviv State University, Department of Physics, 50 Dragomanov Str., 290005, Lviv, Ukraine |
| D/P3 | A STUDY OF PLASMA SPECIES IN THE MAGNETIZED INDUCTIVELY COUPLED Cl2/BCl3/Ar PLASMA ETCHINGS, H. S. Kim, Y. J. Lee, Y. J. Sung, and G. Y. Yeom, Dept. of Materials Engineering, Sungkyunkwan University, Suwon, 440-746, Korea |
| D/P4 | A STUDY OF DRY ETCH MECHANISM OF PZT USING PLASMA DIAGNOSTICS AND XPS, Y. J. Lee, H. S. Kim, Y. J. Sung, J. W. Jang, J. Lee, and G. Y. Yeom, Dept. of Materials Engineering, Sungkyunkwan University, Suwon, 440-746, Korea. K.H. Oh National Institute of Technology and Quality, Kwachon, 427-010, Korea |
| D/P6 | EFFECTS OF OXYGEN PLASMA CONDITIONS IN SOURCE CHAMBER ON THE PROPERTIES OF INDIUM TIN OXIDE FILMS, J. W. Bae, H. J. Kim, N. E. Lee, and G. Y. Yeom, Dept. of Materials Engineering, Sungkyunkwan University, Suwon, 440-746, Korea |
| D/P7 | RADICAL- AND ION-INDUCED REACTIONS IN ATOMIC-ORDER PLASMA NITRIDATION OF Si, Takuya Seino, Takashi Matsuura, and Junichi Murota, Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan |
| D/P8 | PROBE MEASUREMENTS IN DUST PLASMA I.A. Movtchan, Physics Institute, St.-Petersburg University, 1 Ulyanovskaya str., 198904, St.-Petersburg, Russia and I. Yu. Smurov, ENISE, 58 rue Jean Parot, 42023 St.-Etienne, France |
| D/P9 | A DOUBLE CHAMBER CAPACITIVELY COUPLED RF DISCHARGE FOR PLASMA ASSISTING DEPOSITION TECHNIQUES, G. Dinescu, B. Mitu, E. Aldea, National Institute for Laser, Plasma and Radiation Physics, Low Temperature Plasma Physics Department, Magurele-Bucharest, MG-36, 76900 Romania |
| D/P10 | RESEARCH ON CONTROL POSSIBILITIES OF MULTI-COMPONENT COATINGS DEPOSITION PROCESSES BY MEANS OF THE VACUUM ARC METHOD WITH THE USE OF PLASMA SPECTROSCOPIC DIAGNOSTICS, J. Walkowicz, K. Miernik, Institute for Terotechnology, ul.Pulaskiego 6/10, 26-100 Radom, Poland; W. Gulbinski, Technical University of Koszalin, ul. Raclawicka 15-17, 75-620 Koszalin, Poland |
| D/P11 | MATHEMATICAL MODELLING FOR COMPLEX DIAGNOSTICS OF DENSE HIGHLY IONISED PLASMAS, V.I. Mazhukin, V.V. Nosov and M.G. Nickiforov, Moscow, Russia |
| D/P12 | PYROMETRY APPLICATIONS IN THERMAL PLASMA PROCESSING, Ph. Bertrand, M. Ignatiev, I. Smurov and G. Flamant, IMP-CNRS, France; ENISE St Etienne, France |
| D/P13 | PLASMA DIAGNOSTICS BY INTRACAVITY LASER SPECTROSCOPY, V.S. Burakov and S.N. Raikov, Institute of Molecular and Atomic Physics, 220072 Minsk, Belarus |
End of Symposium D
