Article : [SHEET361]

Info : COMPENDEX Answer Number 1, le 19/06/2000.
Info : REPONSE 4, le 13/05/2002.

Titre : A. HAMIDI, N. BECK, K. THOMAS, E. HERR, Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modules, ESREF'99.

Cité dans : [DATA146] LTN, Laboratoire des Technologies Nouvelles, INRETS, Arcueil, France.
Cité dans : [CONF016] ESREF, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis et Microelectronics and Reliability, décembre 2005.
Cité dans : [DATA196] ESREF'99, Proceedings of the 10th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis.
Cité dans :[REVUE172] Elsevier Science, Microelectronics Reliability, Volume 39, Issues 6-7, Pages 721-1170, June - July 1999.
Cité dans : [DATA240] Recherche sur l'auteur E. HERR, mai 2002.
Cité dans : [DIV334]  Recherche sur les mots clés power cycling of power device, mai 2002.
Cité dans :[ART227]

Auteur : Hamidi, A. (ABB Corporate Research Ltd, Baden-Dattwil, Switz)
Auteur : Beck, N.
Auteur : Thomas, K.
Auteur : Herr, E

Vers : Bibliographie
Lien : ART227.HTM#Bibliographie - référence [5].
Meeting : Proceedings of the 1999 10th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 99).
Location : Arcachon, France
Date : 05 Oct 1999-08 Oct 1999
Source : Microelectronics and Reliability v 39 n 6 1999.
Pages : 1153 - 1158
CODEN : MCRLAS
ISSN : 0026-2714
Année : 1999
Infos : Meeting Number : 55796 - Document Type : Journal - Treatment Code : Experimental
Language : English
Stockage : Thierry LEQUEU
Lien : private/HAMIDI2.pdf - 6 pages, 643 Ko.

Abstract :
IGBT modules for power transmission, industrial and traction
applications are operated under severe working conditions and in
harsh environments. Therefore, consequent design, focused on
quality, performance and reliability is essential in order to
satisfy the high customer requirements. One of the main failure
mechanisms encountered in high power IGBT modules subjected to
thermal cycles is wire bond lift-off, which is due to the large
thermal expansion coefficient mismatch between the aluminum wires
and the silicon chips. The paper describes various bonding
technologies using different wire materials directly bonded onto
chip metallisation as well as the ABB solution where the wire is
bonded on a thin molybdenum strain buffer soldered on the chip. We
assess in the present paper the potential of these technologies to
enhance module reliability and lifetime through a power cycling
test. Failure analysis results are presented and the failure
mechanisms related to each technology are explained in detail.
(Author abstract)

Accession_Number : 2000(7):1497

Bibliographie

  [1] :  [ART257]  M.-H. POECH, J. DITTMER, D. GABISCH, Investigations on the damage mechanism of aluminium wire bonds used for high-power applications, Eupac Conf, Essen, 1996, pp. 128-131.
  [2] :  [ART258]  M. HELD, P. JACOB, G. NICOLETTI, P. SCACCO, M.-H. POECH, Fast Power Cycling Test for IGBT Modules in Traction Application, Proc. PEDS 97, 1997 , pp. 425-430.
  [3] : [SHEET122] A. HAMIDI, G. COQUERY, R. LALLEMAND, Reliability of high power IGBT modules. Testing on thermal fatigue effects due to traction cycles, Proc. of EPE Conf., Trondheim, September 1997, vol. 3, pp. 3.118-3.123.
  [4] :  [ART225]  P. MALBERTI, M. CIAPPA, R. CATTOMIO, A power-cycling-induced failure mechanism of IGBT multichip modules, Proc. ISTFA, 163-168, Santa Clara, USA, 1995.

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