S. FORSTER, T. LEQUEU, R. JERISIAN,A. HOFFMANN, "3-D analysis of the breakdown localized defects of ACSTM through a triac study", ESREF'2000, october 2000, pp. 1695-1700.

S. FORSTER, T. LEQUEU, R. JERISIAN,A. HOFFMANN, "3-D analysis of the breakdown localized defects of ACSTM through a triac study", ESREF'2000, october 2000, pp. 1695-1700. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [SHEET348]

Titre : S. FORSTER, T. LEQUEU, R. JERISIAN,A. HOFFMANN, 3-D analysis of the breakdown localized defects of ACSTM through a triac study, ESREF'2000, october 2000, pp. 1695-1700.

Cité dans :[SHEET459] S. FORSTER, T. LEQUEU, R. JERISIAN, A. HOFFMANN, 3-D analysis of the breakdown localized defects of ACSTM through a triac study, Microelectronics Reliability, October 2000, Vol. 40, pp. 1695-1700.
Cité dans : [CONF016] ESREF, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis et Microelectronics and Reliability, décembre 2005.
Cité dans : [DATA126] ESREF'2000, 11th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Dresden, Germany, 2-6 octobre 2000.
Cité dans : [DATA033] Liste des publications de Thierry LEQUEU et activités de recherche, octobre 2022.

Auteur : S. FORSTER - (b)(a)
Auteur : T. LEQUEU - (a)
Auteur : R. JERISIAN - (a)
Auteur : A. HOFFMANN - (b)

Lien : mailto:Stephane.Forster@st.com
Fax : (33) (0)2 47 42 49 37
Adresse : (a) LMP-STMicroelectronics, BP 7155, 37071 Tours Cedex 2, France
Adresse : (b) CLOES, 2 rue E. Belin, 57070 Metz, France
Stockage : Thierry LEQUEU
Lien : private/FORSTER1.pdf - 241 Ko, 6 pages

Abstract :
Abstract: The reliability tests of triac and ACS TM present similarities. In this paper, we propose to analyse
the origin of the defects observed by using measurements and 3D simulation with the ISE tools. We are
interested in the operation of the triac or ACS TM in quadrant 2. The results presented here relate to the discrete
triac only for reasons of confidentiality. Thermal simulation of the triac shows a strong thermal gradient (thermal
shock) in the silicon at turn-on. Stresses and strains in the material created micro crackings that increase the
temperature until the fusion of silicon (hot spot).

Bibliographie

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