Article : [SHEET162]

Info : INSPEC Answer Number 87 - 22/02/2000
Info : REPONSE 781, le 29/03/2004.

Titre : W. BRESCH, A.P. CONNOLLY, Future trends of power semiconductor modules, 1986.

Cité dans : [DATA035] Recherche sur les mots clés thermal + fatigue + semiconductor et reliability + thermal + cycle, mars 2004.
Cité dans : [DATA001] T. LEQUEU, Evolution des composants de puissance et des IGBT, mars 2004.
Cité dans :[PAP360]

Source : Conference Record of the 1986 IEEE Industry Applications Society Annual Meeting (Cat. No.86CH2272-3) New York, NY, USA: IEEE.
Date : 1986
Pages : 438 - 443
Volume : 1 of 2
Références : 5 refs.
Conference : Denver, CO, USA, 28 Sept-3 Oct 1986
Sponsor(s) : IEEE
Price: CCCC CH2272-3/86/0000-0438$01.00
Document_Type : Conference Article
Treatment_Code : Practical; Experimental
Info : Country of Publication : United States
Language : English

Abstract :
New and future developments in power semiconductors based on
research and development investigations now taking place are
reported. Thermal fatigue tests, in which power semiconductor
modules are heated by conducting full-load current, then
forced-cooled without load current, result in rapidly changing
internal temperature. Power semiconductor modules are divided into
three distinct types and comparisons are made between these:
conventional-soldered modules; pressure contact modules; and
eutectic bonded modules. Reliability, thermal fatigue capability,
blocking stability and other features and properties are compared.
New construction techniques have resulted in 50000 cycle capability.
This is a significant improvement over the 500 cycle capability of
conventional soldered modules. The impact on field failures and
long-term equipment reliability are discussed. These new power
modules are expected to have significant impact on manufacturers of
motor drives, switching power supplies, and robotic controls,
especially in improving system reliability.

Accession_Number : 1987:2906761

Titre : Future trends of power semiconductor modules.

Cité dans : [DATA035] Recherche sur les mots clés thermal + fatigue + semiconductor et reliability + thermal + cycle, mars 2004.

Source : Conference Record of the 1986 IEEE Industry Applications Society Annual Meeting (Cat. No.86CH2272-3)
New York, NY, USA: IEEE, 1986. p.438-43 vol.1 of 2 vol. 1807 pp. 5 refs.
Conference: Denver, CO, USA, 28 Sept-3 Oct 1986
Sponsor(s): IEEE
Price: CCCC CH2272-3/86/0000-0438$01.00
Document_Type : Conference Article
Treatment_Code : Practical; Experimental
Info : Country of Publication : United States
Language : English
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Abstract :
New and future developments in power semiconductors based on research and development investigations now taking place are reported. Thermal fatigue tests, in which power semiconductor modules are heated by conducting full-load current, then forced-cooled without load current, result in rapidly changing internal temperature. Power semiconductor modules are divided into three distinct types and comparisons are made between these: conventional-soldered modules; pressure contact modules; and eutectic bonded modules. Reliability, thermal fatigue capability, blocking stability and other features and properties are compared. New construction techniques have resulted in 50000 cycle capability. This is a significant improvement over the 500 cycle capability of conventional soldered modules. The impact on field failures and long-term equipment reliability are discussed. These new power modules are expected to have significant impact on manufacturers of motor drives, switching power supplies, and robotic controls, especially in improving system reliability.

Accession_Number : 1987:2906761 INSPEC

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