Revue : [REVUE313]

Titre : Elsevier Science, Microelectronics Reliability, Volume 35, Issue 3, Pages 325-635, March 1995.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.

Volume : 35
Issue : 3
Pages : 325 - 635
Date : March 1995

[1] : VLSI Reliability Challenges: from device physics to wafer scale systems, Pages : 325-363
Eiji Takeda, Kunihiko Ikuzaki, Hisao Katto, Yuzuru Ohji, Kenji Hinode,
Akemi Hamada, Toshiyuki Sakuta, Takahiro Funabiki and Toshio Sasaki
Lien : vide.pdf - | Journal Format-PDF (1821 K)

[2] : Reliability issues of scaled-down MOS transistors for gigabit circuits, Pages 365-376
Wolfgang H. Krautschneider
Lien : vide.pdf - | Journal Format-PDF (615 K)

[3] : Characterization of functional relationship between temperature and microelectronic reliability, Pages 377-402
Pradeep Lall, Michael Pecht and Edward B. Hakim
Lien : private/LALL1.pdf - | Journal Format-PDF (1383 K)

  [1] :  [ART263]  P. LALL, M. PECHT, E.B. HAKIM, Characterization of functional relationship between temperature and  microelectronic reliability, Microelectronics Reliability, Volume 35, Issues 3, March 1995, pp. 377-402.

[4] : Border traps: issues for MOS radiation response and long-term reliability,
Pages : 403-428
D. M. Fleetwood, M. R. Shaneyfelt, W. L. Warren, J. R. Schwank, T. L.
Meisenheimer and P. S. Winokur
Lien : vide.pdf - | Journal Format-PDF (986 K)

[5] : IC failure analysis: techniques and tools for quality and reliability
improvement, Pages 429-453
Jerry M. SodenRichard E. Anderson
Lien : vide.pdf - | Journal Format-PDF (2580 K)

[6] : Noise as a diagnostic and prediction tool in reliability physics, Pages
455-477
M. M. Jevti
Lien : vide.pdf - | Journal Format-PDF (1167 K)

[7] : Modeling study of the experimental techniques for the characterization of
MOSFET hot-carrier aging, Pages 481-510
Predrag Haba
Lien : vide.pdf - | Journal Format-PDF (1230 K)

[8] : Difference between the 1/f noise spectral density before and after stress
as a measure of the submicron MOS transistors degradation, Pages 511-528
Franciszek Grabowski
Lien : vide.pdf - | Journal Format-PDF (599 K)

[9] : Dielectric breakdown and reliability of MOS microstructures: traditional
characterization and low-frequency noise measurements, Pages 529-537
B. Neri, P. Olivo, R. Saletti and M. Signoretta
Lien : vide.pdf - | Journal Format-PDF (500 K)

[10] : High field dynamic stress of thin SiO2 films, Pages 539-553
M. Nafría, J. Suñé, D. Yélamos and X. Aymerich
Lien : vide.pdf - | Journal Format-PDF (502 K)

[11] : The ESD protection mechanisms and the related failure modes and mechanisms observed in SOI snapback nMOSFET's, Pages 555-566
Koen Verhaege, Guido Groeseneken, Jean-Pierre Colinge and Herman E. Maes
Lien : vide.pdf - | Journal Format-PDF (438 K)

[12] : Design of integrated BiCMOS operational amplifiers with low-probability EMI-induced-failures, Pages 567-586
P. Mattei, S. Graffi, Zs. M. Kovács-V. and G. Masetti
Lien : vide.pdf - | Journal Format-PDF (785 K)

[13] : Analysis of gamma-irradiation induced degradation mechanisms in power VDMOSFETs, Pages 587-602
N. Stojadinovi, S. Golubovi, S. Djori and S. Dimitrijev
Lien : vide.pdf - | Journal Format-PDF (679 K)

[14] : Exploration of heavy ion irradiation effects on gate oxide reliability in power MOSFETs, Pages 603-608
S. R. Anderson, R. D. Schrimpf, K. F. Galloway and J. L. Titus
Lien : vide.pdf - | Journal Format-PDF (286 K)

[15] : The applicability of logarithmic extreme value distributions in electomigration induced failures of Al/Cu thin-film interconnects, Pages 611-617
M. I. Loupis and J. N. Avaritsiotis
Lien : vide.pdf - | Journal Format-PDF (201 K)

[16] : Evaluation and detection of CMOS-LSI with abnormal IDDQ, Pages 619-629
Masaru Sanada
Lien : vide.pdf - | Journal Format-PDF (1181 K)

[17] : Thermal stability of Al/Ni gate AlGaAs/GaAs HEMT's, Pages 631-635
Ilaria De Munari, Fausto Fantini and Paolo Conti
Lien : vide.pdf - | Journal Format-PDF (257 K)

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