Revue : [REVUE281]
Titre : Elsevier Science, Microelectronics Reliability, Volume 42, Issue 1, Pages 1-156, January 2002.
Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.Auteur : Elsevier Science
Volume : 42
Issue : 1
Pages : 1 - 156
Date : January 2002
[1] : , Page 1
Lien : vide.pdf - | Article | Journal Format-PDF (23 K)
[2] : Novel design of driver and ESD transistors with significantly reduced silicon area, Pages 3-13
Koen G. Verhaege, Markus Mergens, Christian Russ, John Armer and Phillip Jozwiak
Lien : vide.pdf - | Article | Journal Format-PDF (771 K)
[3] : A 0.11 m CMOS technology featuring copper and very low k interconnects with high performance and reliability, Pages 15-25
Yoshihiro Takao, Hiroshi Kudo, Junichi Mitani, Yoshiyuki Kotani, Satoshi Yamaguchi, Keizaburo Yoshie, Kazuo Sukegawa, Nobuhisa Naori, Satoru Asai, Michiari Kawano et al.
Lien : vide.pdf - | Article | Journal Format-PDF (928 K)
[4] : Thermomechanical property of diffusion barrier layer and its effect on the stress characteristics of copper submicron interconnect structures, Pages 27-34
Jie-Hua Zhao, Wen-Jie Qi and Paul S. Ho
Lien : vide.pdf - | Article | Journal Format-PDF (270 K)
[5] : Influence of test techniques on soft breakdown detection in ultra-thin oxides, Pages 35-39
Douglas Brisbin and Prasad Chaparala
Lien : vide.pdf - | Article | Journal Format-PDF (290 K)
[6] : Static and low frequency noise characterization of surface- and
buried-mode 0.1 m P and N MOSFETs, Pages 41-46
M. Fadlallah, G. Ghibaudo, J. Jomaah, M. Zoaeter and G. Guegan
Lien : vide.pdf - | Article | Journal Format-PDF (393 K)
[7] : Bias-stress-induced increase in parasitic resistance of InP-based
InAlAs/InGaAs HEMTs, Pages 47-52
Tetsuya Suemitsu, Yoshino K. Fukai, Hiroki Sugiyama, Kazuo Watanabe and
Haruki Yokoyama
Lien : vide.pdf - | Article | Journal Format-PDF (172 K)
[8] : High-electric-field effects and degradation of AlGaAs/GaAs power HFETs: a
numerical study, Pages 53-59
Giovanna Sozzi and Roberto Menozzi
Lien : vide.pdf - | Article | Journal Format-PDF (355 K)
[9] : Reduction of self-heating effect on SOIM devices, Pages 61-66
J. Roig, D. Flores, M. Vellvehi, J. Rebollo and J. Millan
Lien : vide.pdf - | Article | Journal Format-PDF (259 K)
[10] : Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors, Pages 67-76
Rodolfo Quintero, Antonio Cerdeira and Adelmo Ortíz-Conde
Lien : private/QUINTERO1.pdf - | Article | Journal Format-PDF (441 K)
[1] : [ART237] R. QUINTERO, A. CERDEIRA, A. ORTIZ-CONDE, Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors, Microelectronics Reliability, Volume 42, Issues 1, January 2002, pp.
[11] : Effect of the drop impact on BGA/CSP package reliability, Pages 77-82
Kinuko Mishiro, Shigeo Ishikawa, Mitsunori Abe, Toshio Kumai, Yutaka
Higashiguchi and Ken-ichiro Tsubone
Lien : vide.pdf - | Article | Journal Format-PDF (262 K)
[12] : Reliability and routability consideration for MCM placement, Pages 83-91
Yu-Jung Huang, Mei-Hui Guo and Shen-Li Fu
Lien : vide.pdf - | Article | Journal Format-PDF (208 K)
[13] : Characterization of solder interfaces using laser flash metrology, Pages
93-100
Chia-Pin Chiu, James G. Maveety and Quan A. Tran
Lien : vide.pdf - | Article | Journal Format-PDF (485 K)
[14] : Integrated electro-thermomechanical analysis of nonuniformly chip-powered
microelectronic system, Pages 101-108
Tsorng-Dih Yuan, Bor Zen Hong, Howard-H. Chen and Li-Kong Wang
Lien : vide.pdf - | Article | Journal Format-PDF (419 K)
[15] : A simple method for evaluating the transient thermal response of semiconductor devices, Pages 109-117
N. Y. A. Shammas, M. P. Rodriguez and F. Masana
Lien : private/SHAMMAS1.pdf - | Article | Journal Format-PDF (235 K)
[1] : [ART238] N. Y. A. SHAMMAS, M. P. RODRIGUEZ, F. MASANA, A simple method for evaluating the transient thermal response of semiconductor devices, Microelectronics Reliability, Volume 42, Issues 1, January 2002, pp. 109-117.
[16] : The effects of curing parameters on the properties development of an epoxy encapsulant material, Pages 119-125
Christine Naito and Michael Todd
Lien : vide.pdf - | Article | Journal Format-PDF (133 K)
[17] : Reliability improvement of fluorescent lamp using grey forecasting model, Pages : 127-134
C. -H. Chiao and W. Y. Wang
Lien : vide.pdf - | Article | Journal Format-PDF (213 K)
[18] : Improving thermal performance of miniature heat pipe for notebook PC cooling, Pages 135-140
Seok Hwan Moon, Gunn Hwang, Ho Gyeong Yun, Tae Goo Choy and Young II Kang
Lien : vide.pdf - | Article | Journal Format-PDF (229 K)
[19] : A reliability of different metal contacts with amorphous carbon, Pages 141-143
S. Paul and F. J. Clough
Lien : vide.pdf - | Article | Journal Format-PDF (112 K)
[20] : Application of forward gated-diode R¯G current method in extracting F¯N stress-induced interface traps in SOI NMOSFETs, Pages 145-148
Jin He, Xing Zhang, Ru Huang and Yang-yuan Wang
Lien : vide.pdf - | Article | Journal Format-PDF (165 K)
[21] : Precise macromodel applied to high-voltage power MOSFET, Pages 149-152
F. S. Lomeli and A. Cerdeira
Lien : private/LOMELI1.pdf - | Article | Journal Format-PDF (176 K)
[1] : [ART235] F. S. LOMELI, A. CERDEIRA, Precise macromodel applied to high-voltage power MOSFET, Microelectronics Reliability, Volume 42, Issues 1, January 2002, pp. 149-152.
[22] : The correlation between the low-frequency electrical noise of high-power quantum well lasers and devices surface non-radiative current, Pages 153-156
Hu Guijun, Shi Jiawei, Zhang Shumei and Zhang Fenggang
Lien : vide.pdf - | Article | Journal Format-PDF (101 K)
[23] : Calendar, Pages I-VII
Lien : vide.pdf - Format-PDF (36 K)
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