R. QUINTERO, A. CERDEIRA, A. ORTIZ-CONDE, "Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors", Microelectronics Reliability, Volume 42, Issues 1, January 2002, pp.
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Titre : R. QUINTERO, A. CERDEIRA, A. ORTIZ-CONDE, Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors, Microelectronics Reliability, Volume 42, Issues 1, January 2002, pp. 67-76.
Cité dans :[REVUE281] Elsevier Science, Microelectronics Reliability, Volume 42, Issue 1, Pages 1-156, January 2002.
Cité dans : [DIV334] Recherche sur les mots clés power cycling of power device, mai 2002.
Auteur : Rodolfo Quintero
Auteur : Antonio Cerdeira
Auteur : Adelmo Ortíz-Conde
Vers : Bibliographie
Adresse : Sección de Electrónica del Estado Sólido, Dep. de Ingeniería Eléctrica, CINVESTAV, Av. IPN 2508, México D.F., C.P. 07300, Mexico
Lien : mailto:rquinter@mail.cinvestav.mx
Source : Microelectronics Reliability
Volume : 42
Issues : 1
Date : January 2002
Pages : 67 - 76
DOI : 10.1016/S0026-2714(01)00131-7
PII : S0026-2714(01)00131-7
Lien : private/QUINTERO1.pdf - 10 pages, 442 Ko.
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Logiciel : Wolfram
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Abstract :
This paper describes a fast and reliable circuit-based simulation method of
two-dimensional electrical transient characteristics of thyristors and
over-voltage protectors (TOVP). Either device is divided into four-layered
square prisms, and a one-dimensional PNP-NPN transistor pair model associated to
each of them. The transistors are represented with the Gummel-Poon model,
complemented with breakdown and quasi-saturation sub-models. The cells in turn
are coupled through the base planes, with current-modulated resistors.
Plasma-spreading velocities obtained through simulation are comparable to
experimentally obtained ones reported elsewhere. Spatial current density
instabilities induced by device asymmetries are also presented. The required
spatial resolution was attained by representing these four-layer devices with up
to 40,000 Spice circuit elements, including 3000 bipolar junction transistors.
The associated Spice lists were assembled effortlessly with a Mathematica
program. Simulations took from 1 to 3 h in a 650 MHz Pentium III computer, with
no symptoms of convergence problems whatsoever. The authors believe this is the
first time that Spice based high-resolution transient behavior simulations of
TOVPs and thyristors are presented in the literature.
Article Outline
Nomenclature
1. Introduction
2. Simulation method description
2.1. Transient overvoltage protector and thyristor top level models
2.2. Gummel-Poon model extension
2.3. Circuit parameter extraction
2.4. Shorting dots equivalent circuit
2.4.1. Base model for VBE<0.65 V
2.4.2. NPN transistor base model valid when VBE>0.65 V
2.5. Plasma spread model
3. Circuit simulation
4. Simulation results
5. Conclusions
Acknowledgements
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