Revue : [REVUE219]

Titre : Elsevier Science, Microelectronics Reliability, Volume 41, Issue 5, Pages 625-777, May 2001.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.

Volume : 41
Issue : 5
Pages : 625 - 777
Date : May 2001

[1] : Trap generation and breakdown processes in very thin gate oxides, Pages 625-632
Elyse Rosenbaum and Jie Wu
SummaryPlus | Article | Journal Format-PDF (172 K)

[2] : Reliability of 80 m pitch flip chip attachment on flex, Pages 633-638
Petteri Palm, Jarmo Määttänen, Aulis Tuominen and Eero Ristolainen
SummaryPlus | Article | Journal Format-PDF (321 K)

[3] : Effects of device passivation materials on solderable metallization of IGBTs, Pages 639-647
Shatil Haque and Guo-Quan Lu

  [1] :  [PAP303]  S. HAQUE, G.-Q. LU, Effects of device passivation materials on solderable metallization of IGBTs, Microelectronics Reliability, Volume 41, Issue 5, May 2001, pp. 639-647.

[4] : Influence of the lightly doped drain resistance on the worst-case hot-carrier stress condition for NMOS devices, Pages 649-660
Everett E. King, Ronald C. Lacoe and Janet Wang-Ratkovic
Lien : vide.pdf - | Journal Format-PDF (486 K)

[5] : Rapid power cycling of flip-chip and CSP components on ceramic substrates, Pages 661-668
Jaakko Lenkkeri and Tuomo Jaakola
SummaryPlus | Article | Journal Format-PDF (255 K)

[6] : Electrical and stability properties and ultrasonic microscope characterisation of low temperature co-fired ceramics resistors, Pages 669-676
Andrzej Dziedzic, Leszek J. Golonka, Jaroslaw Kita, Heiko Thust, Karl-Heinz Drue, Reinhard Bauer, Lars Rebenklau and Klaus-Jurgen Wolter
SummaryPlus | Article | Journal Format-PDF (227 K)

[7] : Board level reliability of PBGA using flex substrate, Pages 677-687
S. C. Hung, P. J. Zheng, S. H. Ho, S. C. Lee, H. N. Chen and J. D. Wu
SummaryPlus | Article | Journal Format-PDF (1264 K)

[8] : Effect of trench edge on pMOSFET reliability, Pages 689-696
Yung-Huei Lee, Tom Linton, Ken Wu and Neal Mielke

  [1] :  [PAP304]  Y.-H. LEE, T. LINTON, K. WU, N. MIELKE, Effect of trench edge on pMOSFET reliability, Microelectronics Reliability, Volume 41, Issue 5, May 2001, pp. 689-696.

[9] : Effects of the sputtering deposition process of metal gate electrode on the gate dielectric characteristics, Pages 697-704
Takayuki Yamada, Masaru Moriwaki, Yoshinao Harada, Shinji Fujii and Koji Eriguchi
SummaryPlus | Article | Journal Format-PDF (1091 K)

[10] : Wafer level packaging of a tape flip-chip chip scale packages, Pages 705-713
Greg Hotchkiss, Gonzalo Amador, Darvin Edwards, Paul Hundt, Les Stark, Roger Stierman and Gail Heinen
SummaryPlus | Article | Journal Format-PDF (592 K)

[11] : Tradeoffs in multichip module yield and cost with known good die probability and repair, Pages 715-733
H. K. CharlesJr.
SummaryPlus | Article | Journal Format-PDF (1421 K)

[12] : Conversion of the under bump metallurgy into intermetallics: the impact on flip chip reliability, Pages 735-744
Frank Stepniak
SummaryPlus | Article | Journal Format-PDF (478 K)

[13] : Impact of ESD protection device trigger transient on the reliability of ultra-thin gate oxide, Pages 745-749
Kin P. Cheung
SummaryPlus | Article | Journal Format-PDF (194 K)

[14] : Plasma process-induced damage on thick (6.8 nm) and thin (3.5 nm) gate oxide: parametric shifts, hot-carrier response, and dielectric integrity degradation, Pages 751-765
Terence B. Hook, David Harmon and Chuan Lin
SummaryPlus | Article | Journal Format-PDF (441 K)

[15] : Die stress drift measurement in IC plastic packages using the piezo-Hall effect, Pages 767-771
D. Manic, J. Petr and R. S. Popovic
SummaryPlus | Article | Journal Format-PDF (123 K)

[16] : Thermoelectrical degradation processes in NTC thermistors for in-rush current protection of electronic circuits, Pages 773-777
O. Mrooz, A. Kovalski, J. Pogorzelska, O. Shpotyuk, M. Vakiv, B. Butkiewicz and J. Maciak
SummaryPlus | Article | Journal Format-PDF (244 K)

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