Article : [PAP303]

Titre : S. HAQUE, G.-Q. LU, Effects of device passivation materials on solderable metallization of IGBTs, Microelectronics Reliability, Volume 41, Issue 5, May 2001, pp. 639-647.

Cité dans :[REVUE219] Elsevier Science, Microelectronics Reliability, Volume 41, Issue 5, Pages 625-777, May 2001.

Pages : 639 - 647
Lien : private/HAQUE.pdf - 251 Ko
Stockage : Thierry LEQUEU
Lien : http://www.sciencedirect.com/science/article/pii/S0026271401000087

Abstract :
This paper explores the effects of device passivation materials on the metallization process in making solderable contact insulated gate bipolar transistors (IGBTs) for 3-D packaging. Two types of IGBTs (Si3N4 and polyimide-passivated) went through an identical underbump metallization scheme; however, they exhibited vastly different contact resistances. We found significant differences in elemental composition on the contact surfaces of the two IGBTs as received from the manufacturer as well as after an inert plasma-cleaning process. X-ray photoelectron spectroscopy analyses showed that the contact surfaces of polyimide-passivated devices were significantly more contaminated with hydrocarbons than the Si3N4-passivated devices, which resulted in weak interface during the metallization process leading to high contact resistance of the soldered interconnects.

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