A.H. FISCHER, A.E. ZITZELSBERGER, "The quantitative assessment of stress-induced voiding in process qualification", IRPS'2001, April 30 - Mai 3, 2001, Orlando, Floride.
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Article : [PAP425]
Titre : A.H. FISCHER, A.E. ZITZELSBERGER, The quantitative assessment of stress-induced voiding in process qualification, IRPS'2001, April 30 - Mai 3, 2001, Orlando, Floride.
Cité dans : [DIV214] IRPS'2001, 2001 IEEE International Reliability Physics Symposium, 30 avril - 3 mai 2001, Orlando, Floride.
Cité dans : [PAP360] T. LEQUEU, Les tests en fiabilité, rapport interne LMP, novembre 2001.
Auteur : A.H. Fischer
Auteur : A.E. Zitzelsberger
Adresse : Infineon Technologies AG, Reliability Methodology, Otto Hahn Ring 6, D-81739 Munich, Germany
Lien : mailto:armin.fischer@infineon.com
Lien : private/FISCHER.pdf - 7 pages, 1243 Ko.
ABSTRACT :
Stress-induced voiding was studied on submicron aluminum
interconnects. A phenomenological model is derived to describe the
median time of failures which are caused by the growth of stress-
induced voids. Based on this model a procedure for the prediction of
lifetime is proposed. Furthermore, the influence of stress-induced
voids on the electromigration performance is discussed. It will be
shown, that a reduced current density exponent is found in stress-
induced void damaged lines, leading to a decrease of
electromigration lifetimes.
Keywords : Stress-induced voiding, Model for median time to failure, Failure distributions, Activation energy, Lifetime extrapolation, Reliability, Electromigration
REFERENCES : 16
[1] : C.-K. Hu, K.P. Rodbell, T.D. Sullivan, K.Y. Lee, D.P. Bouldin, "Electromigration and stress-induced voiding in fine Al and Al alloy thin films lines", IBM J. Res., Vol. 39 (1995), No.4, p.465-497
[2] : H. Okabayashi, "Stress-Induced Void Formation in Metallization for Integrated Circuits", Matls.Sci.and Eng., R11, No. 5, pp. 191 241, Dec. 1, 1993.
[3] : S.E. Rauch, T.D. Sullivan, "Modelling stress-induced void growth in Al-4wt%Cu lines", Proc. SPIE, vol. 1805, 197-208, 1993
[4] : J.R. Lloyd, "Electromigration in integrated circuit conductors", J. Phys. D: Appl. Phys. 32, R109-118, 1999
[5] : A.S. Oates, "Electromigration Mass Transport Phenomena in Al Thin-Film Conductors with Bamboo Microstructure", Stress Induced Phenomena in Metallization: AIP Proceedings 418 of the fourth Intern. Workshop 1997, p. 39-51 Pergamon, Oxford, 1982, p.27
[7] : P. Besser, S. Brennan and J. C. Bravman, "An X-Ray method for direct determination of the strain state and strain relaxation in micron-scacle passivated metallization lines during thermal cycling", J. Mater. Res. (1994), Vol. 9 No.1, pp.13-24
[8] : G. B. Gibbs, liDiffusion creep of a thin foillf, Phil. Mag. 13 (1966) 589-593
[9] : "Constant Temperature Aging to Characterize Aluminum Interconnect Metallization for Stress-Induced Voiding", JEDEC Publication JEP139, Dec. 2000.
[10] : J.W. McPherson and C.F. Dunn, "A Model for Stress-induced Metal Notching and Voiding in VLSI Al-Si(1%) Metallization", Jvst B5, pp. 1321-1325, (1987)
[11] : S.G. Lee et al., "A Mechanism of Stress-induced Metal Void in narrow Aluminum-based Metallization with the HDP CVD oxide dielectric", proceedings of the IITC meeting (1999), IEEE Cat.No.99EX247, p.149-151
[12] : Besser, P. et al., "The use of an anneal after metal etch to eliminate stress-induced voiding in the 0.25µm process technology for integrated circuits", Proc. AMC, 699-704 (1998).
[13] : C.J. Shute and J.B. Cohen, "Stress relaxation in Al-Cu thin films", Mat. Science and Engineering, A149 (1992), 172-176
[14] : J.R. Black, 1967 Ann. Symp. on Reliability Physics, IEEE Cat. 7-15C58
[15] : J.R. Lloyd, "Electromigration and mechanical stress" Microelectronics Engineering, 49, (1999), 51-64.
[16] : "Standard method for Measuring and Using the Temperature Coefficient of Resistance to Determine the Temperature of a Metallization Line", JEDEC Publication JESD33-A, Oct. 1995.
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