Article : [PAP338]

Titre : R. FERRAGUT, L. GONTHIER, D. MAGNON, J.C. LEBUNETEL, Understanding MBS turn-on behaviour in light dimmer applications, EPE'2001.

Cité dans : [DIV174]  EPE'2001, European Conference on Power Electronics and Applications, Graz, Autriche, 27-28 août 2001.

Congrés : 9th European Conference on Power Electronics and Applications
Date : du 25 au 29 août 2001
Lien : private/PP00343.pdf - 283 Ko, 8 pages
Adresse : Power Microelectronics Laboratory, Tours University
STMicroelectronics, Tours
16, Rue Pierre et Marie Curie, BP7155
37071 Tours Cedex 2, France
Lien : mailto:romain.ferragut@st.com

Résumé :
Nowadays, EMC standard compliance is part of the constraints that every electronic and electrical system must fulfil. Power device switching is the main cause of conducted electromagnetic interferences produced by power conversion systems. Studies and optimisations of switching waveforms are therefore of major concern in power electronics. Several works deal with this subject. They define relations between waveforms and conducted interferences. As a result, sinusoidal shaped switching waveform is shown to be the optimal one. In order to understand how to achieve such waveform, the impact of MBS electrical parameters on switching waveforms should be investigated. This paper presents a simple electrical representation of MBS during turn-on in a resistive or low inductive load. Some conclusions on the influence of MBS electrical parameters on switching waveforms are drawn from it.

Keywords : Bipolar device, Device modelling, Simulation, EMC/EMI

Références : 8
[1] : B. Jayant Baliga, «Trends in Power Semiconductor Devices», IEEE Transactions on electron devices, Vol. 43, N° 10, October 1996.
[2] : M. Roy, L. Gonthier, C. Anceau, «The MBS (Mos Bidirectionnal Switch), a new MOS switch with reverse blocking voltage», Proceeding of EPE’99, 1999.
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[4] : F. Guitton, D. Magnon, «Determination of di/dt allowing a solid switch to commute the mains while fulfilling the conducted EMC standards», EPE’99, 1999.
[5] : F. Costa, R. Reby, E. Labouré, Ch. Rombaut, F. Wilmot, F. Forest, «An innovative gate drive to control electromagnetic perturbations emitted by a MOSFET chopper», Proceeding of EPE’99, 1999.
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[8] : K. Sheng, S. J. Finney, B. W. Williams, «Fast and accurate IGBT model for PSpice», IEE Electronics Letters Online, N°. 19961548, 1996.

  [1] : [99ART048] B.J. BALIGA, Trends in power semiconductor devices, IEEE Trans. On Electron Devices, vol. 43, no. 10, pp. 1717-1731, October 1996.
  [2] :  [PAP158]  -------
  [3] : [SHEET517] C. LAROUCI, G. VERNEAU, J.P. FERRIEUX, C. SCHAEFFER, L. GONTHIER, Apport d'un composant à grille isolée bidirectionnel en tension dans les convertisseurs raccordés au réseau, EPF'2000.
  [4] :  [PAP158]  -------
  [5] :  [PAP158]  -------
  [6] : [LIVRE015] B.J. BALIGA, Power Semiconductor devices, 1996.
  [7] :  [PAP158]  -------
  [8] :  [PAP158]  -------

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