Article : [PAP337]

Titre : M. Breil, J-L . Sanchez, P. Austin, J-P. Laur, J. Jalade, R. Pezzani, F. Duclos, M. Roy, Design and optimization of MOS-thyristor structures with a di/dt active control capability for light dimming applications, EPE'2001.

Cité dans : [DIV174]  EPE'2001, European Conference on Power Electronics and Applications, Graz, Autriche, 27-28 août 2001.

Congrés : 9th European Conference on Power Electronics and Applications
Date : du 25 au 29 août 2001
Lien : private/PP00655.pdf - xxx Ko, 12 pages
Adresse : LAAS-CNRS
7 avenue du Colonel Roche
31077 Toulouse cédex 4, France
Tel. : 33 5 61 33 78 23
Fax. : 33 5 61 33 62 08
Lien : "mailto:breil@laas.fr"
Adresse : ST Microelectronics,
16 rue Pierre et Marie Curie,
37071 Tours cédex 2, France

Résumé :
In this paper, two MOS-thyristor associations are investigated, optimized and designed to provide a di/dt active control capability required in specific applications. These devices combine the IGBT and thyristor behaviors, and allow to achieve a new power function, called IGTH. More precisely, these devices switch on in IGBT mode and have a fully latched low on-state voltage. The influence of the physical and technological parameters on the operation modes and on the main electrical characteristics has been analyzed using 2D numerical simulations, analytical calculations and circuit simulations based on specific physical models. Thus, each of these two integrated devices has been specifically designed for a light dimming application, which requires soft switching conditions in order to avoid EMI. Experimental results on a first fabricated test device are presented.

Keywords : Power semiconductor devices, Monolithic power integration, Design

Références : 6
[1] : R. Pezzani, J-B. Quoirin, Functional integration of power devices: a new approach. 6th European Conference on Power Electronics and Applications, EPE’95 Sevilla, Spain, September 95, pp 2219-2223.
[2] : J-L Sanchez, P. Austin, R. Berriane, M. Marmouget, Trends in design and technology for new power integrated devices based on Functional Integration, 7th European Conference on Power Electronics and Applications, EPE’97 Trondheim, Norway, September 97, pp 1302-1307.
[3] : J. Jalade, J-L. Sanchez, M. Breil, J-P. Laur, P. Austin, M. Roy, E. Bernier, patent by ST Microelectronics (12/31/1998, ref B41 279 and 98/TO/167), Power switch with a controllable di/dt, US patent pending.
[4] : M.Mehrotra, B.J. Baliga, The dual –gate MOS controlled thyristor with current saturation capability, ISPSD’96,Maui Hawaii, USA, May 96, pp133-136.
[5] : J-L Sanchez, J. Rios, R. Berriane, J. Jalade, P. Austin, New high voltage switches: Spontaneous Fired MOS-Thyristor devices, 6th European Conference on Power Electronics and Applications EPE’95, Sevilla, Spain, September 95, pp 1637-1642.
[6] : D. Flores, J. Fernandez, X. Jorda, J. Rebollo, P. Godignon, S. Hidalgo, J. Millan, The dual MOS-gated thyristor (DMGT) structure, Solid-State Electronics, No.4, pp. 523-529, 1998.

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