EUPEC, "Eupec's Homepage & Editorials", octobre 2003.

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Titre : EUPEC, Eupec's Homepage & Editorials, octobre 2003.

Cité dans : [DATA001] T. LEQUEU, Evolution des composants de puissance et des IGBT, mars 2004.
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Web : http://www.eupec.com
Date : octobre 2003

Vers : Power Semiconductors
Vers : Editorials (Last updated : 01.11.99)
Vers : Improved IGBT structure allows P.C. board mounted Modules
Vers : Further Improvements in the Reliability of IGBT Modules
Vers : Technical Improvements in 1700V High Power IGBT Modules with rated currents up to 2400A
Vers : 600V IGBT modules reach new levels of efficiency for power electronics applications
Vers : A New Generation of 600V IGBT-Modules
Vers : Zuverlässigkeit von Al-Dickdraht-Bondverbindungen in IGBT-Modulen
Vers : "Econo"my improvement in inverter-converter-moduledesign
Vers : Insulation Voltage- and Partial Discharge Test of 3.3kV IGBT-Modules
Vers : Design Aspects for Inverters with IGBT High Power Modules
Vers : Application and Characteristics of High Voltage IGBT Modules
Vers : Improved Characteristics of 3.3kV IGBT Modules
Vers : Power Integration with new Econo-PIM IGBT Modules
Vers : A new compact inverter concept with low profile solderable ECONOPACK modules
Vers : Light triggered thyristors with integrated overvoltage protection for high power applications
Vers : Light triggered thyristors Slideshow

Power Semiconductors

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Editorials (Last updated : 01.11.99)

Site : http://www.eupec.com/editorials/editorials.htm

  [1] : [SHEET003] M. HIERHOLZER, Th. LASKA, M. MUNZER, F. PFISCH, C. SCHAFFER, Th SCHMIDT, 3rd Generation of 1200V IGBT Modules - IGBT3, PCIM-Conference 1999, Nuremberg, 6 pages.
  [2] : [SHEET004] F. AUERBACH, J.G. BAUER M. GLANTSCHNIG, J. GöTTERT, M. HIERHOLZER, A. PORST, D. REZNIK, H.-J. SCHULZE, T. SCHüTZE, R. SPANKE, 6.5kV IGBT-Modules, PCIM-Conference 1999, Nuremberg, 4 pages.
  [3] : [SHEET005] R. BARTHELMEß, M. BEUERMANN, N. WINTER, New Fast Diodes With Pressure Contact for GCT / IGBT Converters, PCIM-Conference 1999, Nuremberg.
  [4] : [SHEET006] D. WESTERHOLT,G. SCHMIDT, H.-J. SCHULZE, Power Capability and Reliability of High Power Semiconductors, PCIM-Conference 1999, Nuremberg, 5 pages.

Improved IGBT structure allows P.C. board mounted Modules

By improving the IGBT process to obtain lower on-state voltage and
reduce device power dissipation, high voltage, high power modules may
be mounted on a p.c. board instead of resorting to screw terminals
for interconnections.

Further Improvements in the Reliability of IGBT Modules

This paper gives a survey of the measures and the resulting
improvements of IGBT module reliability reached by eupec during the
introduction of IGBT high power modules.

Technical Improvements in 1700V High Power IGBT Modules with rated currents up to 2400A

Eupecs 1700V IHM product spectrum is enriched by the new generation
of Siemens Low Loss IGBTs. In this review characterization of this
new module generation is outlined and results are discussed.

600V IGBT modules reach new levels of efficiency for power electronics applications

Existing and newly evolving markets and applications for power
electronics are challenging electronics manufacturers to look for
more efficient power semiconductor devices to fulfill the demands of
their clients.

A New Generation of 600V IGBT-Modules

With the introduction of NPT-IGBTs in combination with the
EmCon-diode into the eupec 600V module range, power semiconductors
are available, which combine the advantages of MOS-transistors (fast
switching, low switching losses) and bipolar transistors (low
on-state losses) and allow a high level perfor-mance even in
applications, where up to now MOS-transistors are used.

Zuverlässigkeit von Al-Dickdraht-Bondverbindungen in IGBT-Modulen

Zuverlässigkeit von Dickdraht-Bondverbindungen ist dominantes
Qualitätsthema der eupec.

"Econo"my improvement in inverter-converter-moduledesign

To realise an economy inverter construction, it is a good solution to
use high reliable and flexible mounting technologies with a lot of
automated steps like Printed Circuit Board (PCB) technology for all
components.

  [1] : [SHEET007] R. BAYERER, IGBT Module Technology: State of the Art and Future Evolutions, PCIM-Conference 1999, Nuremberg, 2 pages.

Insulation Voltage- and Partial Discharge Test of 3.3kV IGBT-Modules

The reliability of IGBT-modules is dependent on the durability of the
insulation between terminals and base plate. There are two methods to
check the insulation : The "dielectric test" and the "partial discharge test".

Design Aspects for Inverters with IGBT High Power Modules

With regard to the blocking ability and efficiency of the new 3.3 kV
IGBT high voltage modules (IHV) with nominal currents of 800 and 1200
A, these IGBTs have advanced into operating ranges which up to now
had been reserved to GTOs.

Application and Characteristics of High Voltage IGBT Modules

New IGBT modules with blocking voltage of 3300V and current
capability up to 1200A became available recently. To keep the typical
IGBT advantages like low forward losses, snubberless operation and
short circuit capability, an optimized high voltage cell design has
to be realized.

Improved Characteristics of 3.3kV IGBT Modules

This paper describes the safe operation area of 3.3kV IGBTs and FWDs.
The influence of stray inductances in power circuits and the short
circuit capability of 3.3kV IGBTs are described and discussed.

Power Integration with new Econo-PIM IGBT Modules

The Econo-PIM module family is a new generation of IGBT-modules for
frequency inverter use. In the PIM-modules a three-phase input
rectifier and a three-phase inverter are integrated in one module for
the first time.

A new compact inverter concept with low profile solderable ECONOPACK modules

This paper describes a new economic and compact inverter concept
which is based on matched low profile, wave-solderable modules

Light triggered thyristors with integrated overvoltage protection for high power applications

New developments in high power converters with series connection of
thyristors aim on the one hand the reduction of costs for
installation and maintenance and on the other hand at the increase of
reliability of the converter. That can be done by simplifications of
drive units and integration of protection units into the
semiconductor device itself.

Light triggered thyristors Slideshow

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