Revue : [REVUE386]

Titre : Elsevier Science, Microelectronics Reliability, Volume 43, Issue 1, Pages 1-177, January 2003.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.

Volume : 43
Issue : 1
Pages : 1-177
Date : January 2003

[1] : Early reliability assessment by using deep censoring, Pages 1-16
Harry A. Schafft, Linda M. Head, Jason Gill and Timothy D. Sullivan
Lien : vide.pdf - | Full Text + Links | PDF (420 K)

[2] : A review of ULSI failure analysis techniques for DRAMs. Part II: Defect isolation and visualization, Pages 17-41
Michael Ruprecht, Guenther Benstetter and Doug Hunt
Lien : vide.pdf - | Full Text + Links | PDF (2635 K)

[3] : Effect of nitridation on the reliability of thick gate oxides, Pages 43-47
C. -T. Wu, A. Mieckowski, R. S. Ridley, Sr. , G. Dolny, T. Grebs, J. Linn and J. Ruzyllo
Lien : vide.pdf - | Full Text + Links | PDF (212 K)

[4] : Degradation of RuO2 thin films in hydrogen atmosphere at temperatures between 150 and 250 °C, Pages 49-55
Emil V. Jelenkovic, K. Y. Tong, W. Y. Cheung and S. P. Wong
Lien : vide.pdf - | Full Text + Links | PDF (356 K)

[5] : Effects of gamma-ray irradiation on polycrystalline silicon thin-film transistors, Pages 57-60
N. A. Hastas, C. A. Dimitriadis, J. Brini, G. Kamarinos, V. K. Gueorguiev and S. Kaschieva
Lien : vide.pdf - | Full Text + Links | PDF (132 K)

[6] : LVTSCR structures for latch-up free ESD protection of BiCMOS RF circuits, Pages : 61-69
V. Vashchenko, A. Concannon, M. ter Beek and P. Hopper
Lien : vide.pdf - | Full Text + Links | PDF (488 K)

[7] : TCAD and SPICE modeling help solve ESD protection issues in analog CMOS technology, Pages 71-79
D. Trémouilles, G. Bertrand, M. Bafleur, F. Beaudoin, P. Perdu, N. Guitard and L. Lescouzères
Lien : vide.pdf - | Full Text + Links | PDF (623 K)

[8] : Power p–i–n diodes for snubberless application: H+ irradiation for soft and reliable reverse recovery, Pages 81-87
P. Cova, R. Menozzi and M. Portesine
Lien : vide.pdf - | Full Text + Links | PDF (151 K)

[9] : Degradation mechanism of power devices under di/dt thermal shocks: turn-on of a TRIAC in Q3, Pages 89-98
S. Forster, T. Lequeu and R. Jérisian
Lien : private/FORSTER4.pdf - 10 pages, 870 Ko.

  [1] :  [ART162]  S. FORSTER, T. LEQUEU, R. JERISIAN, Degradation mechanism of power devices under di/dt thermal shocks: turn-on of a TRIAC in Q3, Microelectronics Reliability, Volume 43, Issues 01, January 2003, pp. 89-98.

[10] : Modeling facet heating in ridge lasers, Pages 99-110
G. Romo, T. Smy, D. Walkey and B. Reid
Lien : vide.pdf - | Full Text + Links | PDF (388 K)

[11] : Electrical qualification of new ultrathin integration techniques, Pages 111-115
A. Cazarré, F. Lépinois, A. Marty, S. Pinel, J. Tasselli, J. P. Bailbé, J.
R. Morante and F. Murray
Lien : vide.pdf - | Full Text + Links | PDF (306 K)

[12] : Neural net analysis of integrated circuit yield dependence on CMOS process control parameters, Pages 117-121
M. Karilahti
Lien : vide.pdf - | Full Text + Links | PDF (198 K)

[13] : Impact of probing procedure on flip chip reliability, Pages 123-130
Kuo-Ming Chen and Kuo-Ning Chiang
Lien : vide.pdf - | Full Text + Links | PDF (609 K)

[14] : Influences of the moisture absorption on PBGA package's warpage during IR reflow process, Pages 131-139
Chi-Hui Chien, Yung-Chang Chen, Yii-Tay Chiou, Thaiping Chen, Chi-Chang Hsieh, Jia-Jin Yan, Wei-Zhi Chen and Yii-Der Wu
Lien : vide.pdf - | Full Text + Links | PDF (357 K)

[15] : Wirebonding at higher ultrasonic frequencies: reliability and process implications, Pages 141-153
H. K. Charles, Jr. , K. J. Mach, S. J. Lehtonen, A. S. Francomacaro, J. S. DeBoy and R. L. Edwards
Lien : vide.pdf - | Full Text + Links | PDF (573 K)

[16] : Thermomechanical deformation of a bimaterial plate––as applied to laminate IC assemblies, Pages 155-162
Thomas D. Moore and John L. Jarvis
Lien : private/Moore1.pdf - | Full Text + Links | PDF (203 K)

  [1] :  [ART366]  T.D. MOORE, J.L. JARVIS, Thermomechanical deformation of a bimaterial plate as applied to laminate IC assemblies, Microelectronics Reliability, Volume 43, Issues 1, pp. 155-162.

[17] : Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation, Pages 163-166
David C. T. Or, P. T. Lai, J. K. O. Sin, P. C. K. Kwok and J. P. Xu
Lien : vide.pdf - | Full Text + Links | PDF (115 K)

[18] : Implant dose monitoring by MOS C–V measurement, Pages 167-171
Roland Sorge
Lien : vide.pdf - | Full Text + Links | PDF (100 K)

[19] : A physical approach on SCOBIC investigation in VLSI, Pages 173-177
T. Beauchêne, D. Lewis, F. Beaudoin, V. Pouget, P. Perdu, P. Fouillat and Y. Danto
Lien : vide.pdf - | Full Text + Links | PDF (349 K)

[20] : Calendar for forthcoming events, Pages I-VI
PDF (33 K)

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