Joint Symposium with Deutsche Materialwissenschaftliche Gesellschaft, Cottbus e.V. (DeMaWiG)
Symposium Organizers:
Hans RICHTER, Institute for Semiconductor Physics, Frankfurt (Oder), Germany
Dieter SCHMEIßER, Lehrstuhl für Angewandte Physik - Sensorik, Cottbus, Germany
Lothar PFITZNER, Fraunhofer Institute für Integrierte Schaltungen, Erlangen, Germany
Sharad PRASAD, Device Characterization Research and Development, LSI Logic Corporation, Milpitas CA, USA
Thursday, June 3, 1999 - Morning
Jeudi 3 juin 1999, Matin
| M-I.1 | 8:30–9:00 | - Invited - | Overview of Status and Challenges Testing System on Chip with Embedded DRAMS, T. Falter and D. Richter, Siemens AG, München, Germany |
| M-I.2 | 9:00–9:30 | - Invited - | ATHENA: The Industry Standard of Process Simulation, E. Guichard, Silvaco, Gières, France |
| M-I.3 | 9:30–9:50 | Optimization of 0.18 µm CMOS Devices by Coupled Process and Device Simulation, A. Burenkov, K. Tietzel and J. Lorenz, Fraunhofer Institut für Integrierte Schaltungen, Erlangen, Germany | |
| M-I.4 | 9:50–10:10 | - Invited - | Silicon-on-Insulator: Materials Aspects and Applications, A. Plößl and G. Kräuter, Max-Planck-Institut für Mikrostruktur-physik, Halle, Germany |
| M-I.5 | 10:10–10:40 | - Invited - | Tailoring Materials Properties for Advanced SiGeC Heterobipolar Transistors, H. Rücker and B. Heinemann, IHP, Frankfurt (Oder), Germany |
| 10:40-11:00 | BREAK |
| M-II.1 | 11:00-11:30 | - Invited - | New Methods for On-line Testing to Enhance Reliability of ICs, M. Goessel, University of Potsdam, Germany |
| M-II.2 | 11:30-11:50 | Focused Ion Beam Technology for Defect Inspection, Failure Analysis, and Design Verification, L. Frey, C. Lehrer, S. Petersen and H. Ryssel, Fraunhofer Institut Integrierte Schaltungen, Erlangen, Germany | |
| M-II.3 | 11:50–12:10 | Efficient Backup Schemes for Processors in Embedded Systems, H. T. Vierhaus and M. Pflanz, BTU Cottbus, Germany | |
| 12:10-13:30 | LUNCH |
Thursday, June 3, 1999 - Afternoon
Jeudi 3 juin 1999, Après-midi
| M-III.1 | 13:30–14:00 | - Invited - | Two- and Three-Dimensional Numerical Modelling of Copper Electroplating for Advanced ULSI Metallization, G. Ritter, G. Wilson, P. McHugh and T. Ritzdorf, Semitool Inc., Kalispell Montana, USA |
| M-III.2 | 14:00–14:30 | - Invited - | A Novel Processing Approach for High-Epsilon and Ferroelectric Capacitor Manufacturing, L. Pfitzner, Ch. Schmidt, C. Schneider, Fraunhofer Institut für Integrierte Schaltungen, Erlangen, Germany, Ch. Dehm, O. Spindler and A. Gschwandtner, Siemens AG, München, Germany |
| M-III.3 | 14:30–14:50 | Optical Characterization of Dielectric Insulating Layers on Silicon, J. Reif, D. Wolfframm and Th. Schneider, BTU Cottbus, Germany | |
| M-III.4 | 14:50–15:10 | Modification of MOS Structure Parameters under ARC Plasma JET Treatment, V. V. Andreev, Baumann Moscow State Technical University, Kaluga, Russia, V. M. Maslovsky, Zelenograd Research Institute of Physical Problems, Moscow, Russia, A. A. Obednin and G. Ya. Pavlov, JSC "Concern Scientific Center", Moscow, Russia | |
| M-III.5 | 15:10–15:30 | Reliability of In-Built Aluminum Interconnections with Low-E Dielectric based on Porous Anodic Alumina, S. Lazarouk, Katsouba, Belarusian State University Informations and Radioelectronics, Minsk, Belarus, A. Demianovich, V. Stanovski, V. Vysotzki and V. Ponomar, Research and Design Company Belmicrosystems, Minsk, Belarus |
| M-IV.1 | 15:30–16:00 | - Invited - | Optimization of the Crystallization of Amorphous Silicon by Mean of a 200 ns Excimer Laser Pulse for AMLCD Applications, D. Zahorski, T. Tran Quang, C. Prat, SOPRA, Paris, France, T. Harrer, E. Lueder, University of Stuttgart, Germany and E. Fogarassy, CNRS PHASE, Strasbourg, France |
| M-IV.2 | 16:00–16:20 | Crystal Growth Under Heat Field Rotation Conditions, A. E. Kokh and N. G. Kononova, Institute of Mineralogy and Petrography, Novosibirsk, Russia | |
| M-IV.3 | 16:20–16:40 | Influence of the Melt Convection on the Interface During Czochralski Crystal Growth, W. Miller, K. Böttcher and U. Rehse, Institut für Kristallzüchtung, Berlin, Germany |
| M-V.1 | 16:40–17:10 | - Invited - | Reliability and Stability of Organic Functional Layers in Electronic Devices, J. Simmerer, Siemens AG, Erlangen, Germany, F. Steuber, M. Stoessel and J. Staudigel, Universität Erlangen, Germany |
| M-V.2 | 17:10–17:40 | - Invited - | Field Effect in Organic Devices, S. Scheinert, G. Paasch, S. Pohlmann, H.-H. Hoerhold and R. Stockmann, TU Ilmenau, Germany |
| M-V.3 | 17:40–18:00 | Polymeric Electrodes, G. Appel, R. Micalo, K. Henkel, A. Oprea, A. Yfantis, I. Paloumpa and D. Schmeißer, BTU Cottbus, Germany | |
| M-V.4 | 18:00–18:20 | A General Approach to Electronic and Optical Properties of Phenylene Based Polymers, N. Kirova, S. Brazovskii, Université Paris-Sud, Orsay, Cedex, France and A. R. Bishop, LANL, Los Alamos, USA | |
| M-V.5 | 18:20–18:40 | Organic Photochromic Media for Molecular Photonics, V. A. Barachevsky, Russian Academy of Sciences, Moscow, Russia |
Friday, June 4, 1999 - Morning
Vendredi 4 juin 1999, Matin
| M-VI.1 | 8:30–9:00 | - Invited - | Front-End Process Simulation, C. Rafferty, Bell Labs, Lucent Technology, USA |
| M-VI.2 | 9:00–9:20 | Misfit Strain Engineering for Heterojunction Bipolar Transistors, H. Richter, H.-J. Osten and A. Fischer, IHP, Frankfurt (Oder), Germany | |
| M-VI.3 | 9:20–9:50 | - Invited - | Two-Dimensional Mapping of the Electrostatic Potential in Transistors by Electron Holography, W. D. Rau, P. Schwander and A. Ourmazd, IHP, Frankfurt (Oder), Germany |
| 9:50–10:20 | BREAK |
| M-VII.1 | 10:20–10:40 | Cross-Sectional STM/STS - A Useful Tool for Identification of Dopants, R. Nuffer, H.-J. Müssig and J. Dabrowski, IHP, Frankfurt (Oder), Germany | |
| M-VII.2 | 10:40–11:00 | A Spectro-Microscopic Approach to Study Lateral Doping Profiles, P. Hoffmann, R. P. Mikalo and D. Schmeißer, BTU Cottbus, Germany | |
| M-VII.3 | 11:00–11:20 | Influence of the Vacancy-Dopant Interaction on the Diffusion in Solids: A Rigorous Master Equation Approach, V. I. Tokar, IPCMS, Strasbourg, France | |
| M-VII.4 | 11:20–11:40 | Integration of Quantum Transport Models in Classical Device Simulators, P. N. Racec and U. Wulf, BTU Cottbus, Germany | |
| M-VII.5 | 11:40–12:00 | Application the Method of Local Windows at Physical Researches, A. Borisenko and Y. Zuban, Sumy State University, Ukraine |
End of Symposium M
