Symposium Organizers:
Gabriel CREAN, National Microelectronics Research Centre (NMRC), Cork, Ireland
Yaakov AMITAI, Optics Group, Electro-Optics Industries Ltd, Rehovot, Israel
Sylvain PAINEAU, Thomson-CSF, Laboratoire Central de Corbeville, Orsay, France
Thursday June 3 1999 - Morning
Jeudi 3 juin 1999, Matin
| K-I.1 | 9 :00-9 :40 | -Invited- | Coudray |
| K-I.2 | 9 :40-10 :00 | SOL-GEL DERIVED GERMANIUM SULFIDE PLANAR WAVE- GUIDES, Jian Xu and R.M. Almeida, INESC, R. Alves Redol, 9-3D, 1000 Lisboa, Portugal | |
| K-I.3 | 10 :00-10 :20 | DENSIFICATION STUDIES OF UV IRRADIATED SILICA SOL-GEL THIN FILMS ON SILICON, K. Mongey, B. Phillips, and G.M. Crean, National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland | |
| K-I.4 | 10 :20-10 :40 | LOW DIELECTRIC CONSTANT POROUS SILICA FILM FORMED BY PHOTO-INDUCED SOL-GEL PROCESSING, Jun-Ying Zhang and Ian W Boyd, Electronic & Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom, | |
| K-I.5 | 10 :40-11 :00 | MORPHOLOGICAL AND OPTICAL STUDIES OF SOL-GEL MATERIALS FOR DIFFERENT APPLICATIONS, D. Andrzejewski, A. Ulatowska, L. Bryja, H. Podbielska, J. Misiewicz, Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland | |
| 11 :00-11 :20 | BREAK | ||
| K-I.6 | 11 :20-11 :40 | BENDING PROPERTIES IN OXIDISED POROUS SILICON WABEGUIDES, M. Balucani, V. Bondarenko, A. Ferrari, G. Lamedica, N.M. Kazuchits, A. Ricciardelli, E. Viarengo, V.A. Yakovtseva | |
| K-I.7 | 11 :40 –12 :00 | OPTICAL STUDY OF POROUS SILICON BURRIED WAVEGUIDE FABRICATED FROM P-TYPE SILICON, J. Charrier, C. Lupi*, L. Haji, C. Boisrobert*, Groupe de Microélectronique et Visualisation, Université de Rennes1, I.U.T. de Lannion, rue Edouard Branly, B.P. 150, 22302 Lannion Cedex, France; *Groupe de Physique des Solides pour l’Electronique, Université des Sciences et des Techniques de Nantes, 2 rue de la Houssinière, 44400 Nantes, France | |
| K-I.8 | 12 :00-12 :20 | OPTICAL WAVEGUIDES FABRICATED ON POLYMER SUBSTRATE B ELECTRON BEAM, C. Darraud-Taupiac, V. Binsangou, J.L. Decossas and J.C. Vareille, Institut de Recherces en Communications Optiques et Microondes (IRCOM), UMR 6615, Université de Limosges, 123 av. Albert Thomas, 87060 Limoges Cedex, France | |
| K-I.9 | 12 :20-12 :40 | b-SiC-ON INSULATOR WAVEGUIDE STRUCTURES FOR HIGH-SPEED POCKELS MODULATORS, A. Vonsovici, G.T. Reed, A.G.R. Evans*; University of Surrey, School of Electronics, Information Technology and Mathematics, Guildford 1 GU2 SXH, U.K.; * University of Southampton, Department of Electronics and Computer Science, Highfield, Southampton SO17 1BJ, U.K. | |
| 12 :40-14 :00 | LUNCH |
Thursday, June 3, 1999 - Afternoon
Jeudi 3 juin 1999, Après-midi
| K-II.1 | 14 :00-14 :20 | DESIGN AND FABRICATION OF INTEGRATED SI-BASED OPTOELECTRONIC DEVICES, S. Libertino and S. Coffa, CNR-IMETEM, Catania, Italy | |
| K-II.2 | 14 :20-14 :40 | ROOM-TEMPERATURE SiGe-BASED LIGHT EMITTING DIODES, L.Vescan and O. Chretien, Institut für Schicht und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany and T. Stoica, Institutul National de Fizica Materialelor, POB MG7, Magurele, Bucharest, Romania | |
| K-II.3 | 14 :40-15 :00 | IMPACT OF THE SiGe/Si INTERFACE STRUCTURE UPON THE LOW TEMPERATURE PHOTOLUMINESCENCE OF A Si/Si1-xGex MULTIPLE QUANTUM WELL, T.P. Sidiki, C. Ferrari*, S. Christiansen**, M. Albrecht**, W.B. de Boer*** C.M. Sotomayor Torres, Institut für Materialwissenschaften, Fachbereich Elektrotechnik, Universitaet Wuppertal, 42097 Wuppertal, Germany ; *CNR Maspec Institute, Via Chiavari 18/A, Parma 43100, Italy ; **Universitaet Erlangen, Institut fuer Werkstoffwissenschaften, Mikrocharakterisierung, Cauerstr.6, 91058 Erlangen, Germany ; ***Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands | |
| K-II.4 | 15 :00-15 :20 | SILICON-BASED OPTICAL RECEIVERS IN BICMOS TECHNOLOGY FOR ADVANCED OPTOELECTRONIC INTEGRATED CIRCUITS, K. Kieschnick, H. Zimmermann, University of Kiel, Chair for Semiconductor Electronics, Kaiserstr. 2, 24143 Kiel, Germany | |
| K-II.5 | 15 :20-15 :40 | ULTRAFAST Si-BASED MSM MESA PHOTODETECTORS WITH OPTICAL WAVEGUIDE CONNECTION, Ch. Buchal, M. Löken, A. Roelofs, L. Kappius and S. Mantl, Institut für Schicht- und Ionentechnik, ISI-2, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany | |
| 15 :40-16 :00 | BREAK | ||
| K-II.6 | 16 :00-16 :20 | TUNABLE RESONANT GRATING WAVEGUIDE STRUCTURES, G. Levy-Yurista, N. Dudovich and A.A. Friesem, Department of Physics of Complex Systems, Weizmann Institute of Science, Rehovot 76100, Israel, and B.E. Kempf and H. Burkhard, Research Department Optoelectronics, Deutsche Telekom, P.O Box 100003, 64276 Darmstadt, Germany | |
| K-II.7 | 16 :20-16 :40 | FERROELECTRIC-DOMAIN-INVERTED GRATINGS BY ELECTRON BEAM ON LiNbO3, C. Restoin, C. Darraud-Taupiac, J.L. Decossas and J.C. Vareille, Institut de Recherces en Communications Optiques et Microondes (IRCOM), UMR 6615, Université de Limosges, 123 av. Albert Thomas, 87060 Limoges Cedex, France and J. Hauden, Laboratoire d’Optique PM Duffieux, UMR CNRS 6603, Université de Franche Comté, 16 route de Gray, 25030 Besancon Cedex, France | |
| K-II.8 | 16 :40-17 :00 | InGaAs/InAlAs BULK MICROMACHINED TUNABLE FABRY-PEROT FILTER FOR DENSE WDM SYSTEMS, J. Pfeiffer, J. Peerlings, R. Riemenschneider, P. Meissner and H.K. Hartnagel, TU Darmstadt, Merckstr. 25, 64283 Darmstadt, Germany; E. Goutain, Thomson-CSF, LCR, Domaine de Corbeville, 91404 Orsay Cedex, France | |
| K-II.9 | 17 :00-17 :20 | DYNAMIC OPTICAL INTERCONNECTS BASED ON PLANAR OPTICAL ELEMENTS, V. Weiss*,**, E. Millul**, E. Johnson**, Y. Amitai*,** and A.A. Friesem**, ELOP – Electrooptics Industries* and Weizmann Institute of Science**, Physics of Complex Systems, Rehovot 76100, Israel | |
| K-II.10 | 17 :20-17 :40 | ELECTRONIC MONOLITHIC INTERCONNECT WITH POLYIMIDE, J.P. Moliton, T. Trigaud, B. Maziere, UMOP, Université de Limoges, 123 Av. Albert Thomas, 87060 Limoges, France | |
| K-II.12 | 17 :40-18 :00 | TECHNOLOGICAL PROCESSES AND MODELLING OF OPTO-ELECTRO-MECHANICAL MICROSTRUCTURES, R. Muller, V. Moagar Poladian, I. Pavelescu, E. Manea, D. Cristea, P. Obreja, National Institute for Research and Development in Microtechnologies , PO Box. 38-160, 72225 Bucharest, Romania |
Poster Session
| K/P1 | MOCVD GROWTH OF GaAsN: SURFACE STUDY BY AFM AND OPTICAL PROPERTIES, L. Auvray, H. Dumont, J. Dazord, C. Bru, Y. Monteil, J. Bouix, LMI, UCB Lyon 1, 43 Bd du 11 Novembre 1918, 69622 Villeurbanne Cedex, France |
| K/P2 | DIRECT MBE GROWTH OF GaN ON GaAs SUBSTRATES FOR INTEGRATED SHORT WAVELENGTH EMITTERS, A. Georgakilas, K. Tsagaraki, E. Makarona, FORTH/IESL, PO Box 1527, 71110 Heraklion, Greece and N.T. Pelekanos, CEA/Grenoble, DRFMC/SP2M, 38054 Grenoble, France |
| K/P3 | ANALYSIS OF PROCESSES OF EXCESS ACTIVE REGION TEMPERATURE OF GREEN LED's ON THE BASE OF HETEROSTRUCTURES WITH QUANTUM WELLS, G.A. Sukach, P.F. Oleksenko, P.S. Smertenko, Institute of Semiconductor Physics NASU, 45, prospekt Nauki, 252650 Kyiv, Ukraine and S. Nakamura, Nichia Chemical Industries, Ltd, 491 Oka, Kamineka, Anan, Tokushima 774, Japan |
| K/P4 | FABRICATION OF LOW THRESHOLD RED VCSELs, T. Calvert, J. Lambkin, B. Corbett and G.M. Crean, National Research Centre, Lee Maltings, Prospect Row, Cork, Ireland |
| K/P5 | ELECTROLUMINESCENCE OF Er/O CO-DOPED Si STRUCTURES GROWN BY MBE USING Er AND SiO EVAPORATION, Chun-Xia Du, K.B. Joelson, W.-X. Ni, F. Duteil and G.V. Hansson, Department of Physics, Linkoeping University, 581 83 Linkoeping, Sweden |
| K/P6 | OPTIMIZATION OF UNDOPED AND Si-DOPED InGaP/GaAs GROWN BY A VALVED PHOSPHORUS CRACKER CELL IN SOLID SOURCE MBE, K.W. Mah, S.F. Yoon and H.Q. Zheng, School of Electrical and Electronic Engineering (block S2), nanyang Technology University, Nanyang Avenue, Singapore 639798, Rep. of Singapore |
| K/P7 | AVALANCHE POROUS SILICON LIGHT EMITTING DIODES FOR OPTICAL INTRA-CHIP INTERCONNECTS, S. Lazarouk, P. Jaguiro, S. Katsouba, Belarusian State University Informatics and Radioelectronics, P. Browka 6, 220027, Minsk, Belarus and S. Melnikov, Institute of Applied Physic Problems, Kurchatova 7, 220064 Minsk, Belarus. |
| K/P8 | PHOTOPHYSICAL PROPERTIES OF NANOSi/SiOx COMPOSITES IN Al/COMPOSITE/MONO Si STRUCTURES FOR GREEN LIGHT EMITTING AND PHOTODETECTOR SCHOTTKY DIODES, E. Buzaneva, A. Gorchinsky, G. Popova, P. Zolotarenko, V. Pogorelov, V. Bukalo, Y. Astashkin, Kyiv Taras Shevchenko University, Physics/Radiophysics Department, Prospect Glushkova 6, 252022 Kyiv, Ukraine; S. Lazarouk, BSUIR, Brovki Str. 6, 220600 Minsk, Belarus; A. Starovoitov, S. Beyliss, Solid State Research Centre, De Montfort University, Leicester, UK |
| K/P9 | LIGHT EMISSION FROM HOLMIUM-DOPED CRYSTALLINE SILICON, N.A. Sobolev and Y.A. Nikolaev, Ioffe Physicotechnical Institute, St.Petersburg 194021, Russia ; A.M. Emel`yanov and A.N. Yakimenko, St.Petersburg State Technical University, St.Petersburg 195251, Russia |
| K/P10 | LUMINESCENCE MEASUREMENT ON MOS TUNNEL DIODES AS A METHOD OF FINDING THE PHOTON EMISSION RATERS IN SILIOCN, S.V. Gasteg, I.V. Grekhov, A.F. Shulekin, S.E. Tyaginov, Physicotechnical inst., Polytecnicheskaya 26, 194021 St. Petersburg, Russia and N. Asli, P. Seegebrecht, M.I. Vexler, H. Zimmermann, LHT CAU, Kaiserstr. 2, 24143 Kiel, Germany |
| K/P11 | SILICON COMPARTIBLE DIRECT GAP SEMICONDUCTORS Ru2Si3 AND Os2Si3, V.L. Shaposhnikov, D.B. Migas, A.G. Kharytanovich, A.B. Filonov, V.E. Borisenko, Belarusian State University of Informatics and Radioelectronics, P. Browka 6, 220027 Minsk, Belarus |
| K/P12 | A SOLID STATE NEAR INFRARED SPECTRUM ANALIZER BASED ON POLYCRYSTALLINE Ge ON Si, L. Colace, G. Masini, F. Galluzzi and G. Assanto, Dipartimento di Ingengeria Elettronica, Universita Roma Tre, Via Vasca Navale 84, 00146 Roma, Italy |
| K/P13 | LOW-NOISE AMPLIFIER FOR FOTORECEIVER BASED ON ALUMINIUMOXIDE FILM, V.V. Murav’ev, A.A. Tamelo, V.A. Socol, U.M. Byahun, E.P. Ignashov, Belarusian State University of Informatics and Radioelectronics, vul. Petrusya Broœ ki 6, 220027 Minsk, Republic of Belarus |
| K/P14 | ULTRATHIN FILMS OF ORIENTED ORGANIC LINEAR AGGREGATES AS A BASIS FOR A BISTABLE ALL-OPTICAL SWITCHING DEVICE, H. Glaeske, K.-H. Feller, V.A. Malyshev*, University of Applied Sciences, Department of Physics and Medical Engineering, Tatzendpromenade 1b, 07745 Jena, Germany ; *Permanent adress: Vavilov State Optical Institute, St. Petersburg, Russia |
| K/P15 | ORGANIC LIGHT-SENSITIVE MATERIALS FOR OPTICAL FOR OPTICAL INTERCONNECTION, V.A. Barachevsky, 7a, Novatorov Street, 117421 Moscow, Russia |
| K/P16 | PLANAR INTEGRATION OF A POLARIZATION-INTENSITIVE OPTICAL SWITCH WITH HOLOGRAPHIC ELEMENTS, Y. Moreau, Y. Renotte and Y. Lyon, HOLOLAB, Institut de Physique, B5, Université de Liège, 4000 Liège, Belgium |
| K/P17 | POSSIBILITIES TO INCREASE THE RESOLUTION OF PHOTOECTRIC INCREMENTAL ROTARY ENCODERS, N.N. Dumbravescu, National Inst. for R&D in Microtechnologies, Str. Erou Iancu Nicolae 32B, 72996 Bucharest, Romania and S.R. Schiaua, National Inst. for R&D in Precision Mechanics, Cal. Pantelimon 6-8, 73391 Bucharest, Romania |
| K/P18 | LASER ASSISTED JOINING OF GLASS FIBERS IN SILICON-V-GROOVES, S. Kaufmann, Bavarian Laser Center (BLZ), Schallershofer Str. 108, 91056 Erlangen, Germany and A. Otto, Chair of Manufacturing Technology, University of Erlangen-Nuremberg, Egerlandstr. 11, 91058 Erlangen, Germany |
| K/P19 | EXPERIMENTS FOR 3-D STRCTURING OF THICK RSISTS BY GRAY TONE LITHOGRAPHY, N.N. Dumbravescu, National Inst. for R&D in Microtechnologies, Str. Erou Iancu Nicolae 32B, 72996 Bucharest, Romania. |
| K/P20 | LIGHT-INDUCED DRIFT OF ELECTRONS AND IMPURITIES IN SEMICONDUCTORS AND POSSIBLE APPLICATION OF IT, N.N. Krupa and A.A. Ostrokhova, Films physics Dept., Institute of Magnetism, Vernadsky 36b, 252142 Kiev, Ukraine |
| K/P21 | NEW NLO SOLIDS: BORATES, PHOSPHATES, PHOSPHIDES, SELENIDES, M. Roth, N. Angert and M. Tseitlin, School of Applied Science, The Hebrew Univ., Jerusalem 91904, Israel; G. Wang, T.P.J. Han and H.G. Gallagher, Dept. of Physics and Applied Physics, Univ. of Strathclyde, Glasgow G1 1XN, Scotland, U.K.; S.N. Barilo and L.A. Kurnevich, Inst. of Physics of Solids and Semiconductors, Minsk 220072, Belarus; V.O. Petukhov, S.Ya. Tochitsky and V.A. Gorobets, Inst. of Physics, Minsk 220072, Belarus and N.I. Leonyuk, Moscow State Univ., Moscow 119899, Russia |
| K/P22 | CRYSTAL GROWTH AND CHARACTERIZATION OF NEW BORATES AND BOROSILICATES WITH NLO POTENTIAL, N.I. Leonyuk, E.V. Koporulina, V.V. Maltsev and E.P. Shvanskii, Moscow State University, 119899 Moscow, Russia |
| K/P23 | NONLINEAR KDP CRYSTALS FOR HIGH POWER LASERS AND THEIR STRUCTURE-SENSITIVE CHARACTERISTICS, V.I. Salo, V.F. Tkachenko, M.I. Kolybayeva, I.M. Pritula, ST Concern "Institute for Single Crystals" Department of Optical and Constructional Crystals, Lenin Ave. 60, 310001 Kharkov, Ukraine |
| K/P24 | WAVEGUIDE PROPERTIES OF ACTIVE OPTICAL FILMS GROWN BY PULSED LASER DEPOSITION, E.D. Eugenieva, P.A. Atanasov, Bulgarian academy of Sciences, Institute of Electronics, 72 Tzarigradsko Shose, Sofia 1784, Bulgaria |
| K/P25 | PROTON EXCHANGE IN Y-CUT LiNbO3, M. Kuneva, S. Tonchev and M. Pashtrapanska, Bulgarian Academy of Sciences, Institute of Solid State Physics, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria |
Friday, June 4, 1999 - Morning
Vendredi 4 juin 1999, Matin
| K-III.1 | 09 :00-9 :40 | -Invited- | Esner |
| K-III.2 | 09 :40-10 :00 | MONOLITHIC INTEGRATION OF III-V MICROCAVITY LEDs ON SILICON DRIVERS USING CONFORMAL EPITAXY, B. Gérard, X. Marcadet, D. Pribat, Thomson-CSF Central Research Laboratory, Orsay, France ; J.F. Carlin, M. Ilegems, Institute for Micro- and Opto-electronic, Ecole Polytechnique Fédérale, Lausanne, Switzerland, D. Friedrich, J. Eichholz, H. Bernt, Fraunhofer Institute for Silicon Technology, Itzehoe, Germany. | |
| K-III.3 | 10 :00-10 :20 | SINGLE-GROWTH EPITAXIAL STRUCTURE FOR OPTICAL INTERCONNECTS APPLICABEL IN A GaAs-Si WAFER BONDING TECHNOLOGY, K. Michelakis, D. Cengher, E. Aperathitis, G. Deligeorgis, M. Androulidaki, Z. Hayzopoulos, p. Tzanetakis and A. Georgakilas, FORTH/IESL, PO Box 1527, 71110 Heraklion, Greece | |
| K-III.4 | 10 :20-10 :40 | INTEGRATION OF MICRO-OPTIC AND OPTOELECTRONIC ELEMENTS BY POLYMER UV REACTION MOULDING, P. Dannberg and A. Bräuer, Fraunhofer Institut IOF, Schillerstrasse 1, 07745 Jena, Germany | |
| K-III.5 | 10 :40-11 :00 | NEW TYPES OF MICROLENS ARRAYS FOR I.R. BASED ON INORGANIC CHALCOGENIDE PHOTORESISTS, N.P. Eisenberg, M. Manevich, S. Noah, Jerusalem College of Technlogy, 91160 Jerusalem, Israel and M. Klebanov, V. Lyubin, Ben-gurion University, 84105 Beer-sheva, Israel | |
| 11 :00-11 :20 | BREAK | ||
| K-III.6 | 11 :20-11 :40 | LOW-STRESS HYBRIDISATION OF EMITTERS, DETECTORS AND DRIVER CIRCUITRY ON A SILICON MOTHERBOARD FOR OPTOELECTRONIC INTERCONNECT ARCHITECTURE, B. Corbett, K. Rodgers, D. O’Connell, F.A. Stam, P.V. Kelly and G.M. Crean, National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland. | |
| K-III.7 | 11 :40-12 :00 | PROCESSING OF HIGH PERFORMANCE OPTOELECTRONIC COMPUTING MODULES USING FLIP-CHIP TECHNOLOGY, A. Dimoula, R. Esser, A. Christou, Department of Material Engineering, University of Maryland at College Park, USA | |
| K-III.8 | 12 :00-12 :20 | DYNAMIC OPTICAL INTERCONNECTS BASED ON PLANAR OPTICAL ELEMENTS, M. Oron, E. Johnson and Y. Amitai, Physics of Complex Systems Dept., Weizmann Institute of Science, Rehovot 76100, Israel | |
| K-III.9 | 12 :20-12 :40 | OPTICAL BROADCAST AND CLOCK DISTRIBUTION FOR MULTI-CHIP MODULES, M. Pez and S. Paineau,Thomson-CSF Laboratoire Central de Recherches, Domaine de Corbeville, 91404 Orsay Cedex, France. | |
| 12 :40-14 :00 | LUNCH |
Friday, June 4, 1999 - Afternoon
Vendredi 4 juin 1999, Après-midi
| K-IV.1 | 14 :00-14 :20 | DEVELOPMENT OF A VISIBLE VCSELs-TO-PLASTIC OPTICAL FIBRE MODULE FOR USE IN HIGH-SPEED OPTICAL DATA LINKS, J. Lambkin, National Research Centre, Lee Maltings, Prospect Row, Cork, Ireland; J. Woodhead, University of Sheffield, UK; J. Hosea, University of Surrey, UK and P. Van Daele, IMEC, Gent, Belgium | |
| K-IV.2 | 14 :20-14 :40 | MTTM-COMPATIBLE CONNECTORISATION OF RCLED- AND VCSEL- ARRAYS TO PLASTIC OPTICAL FIBER RIBBON FOR LOW COST PARALLEL DATALINKS, A. Van Hove, T. Coosemans, K. Vandeputte, L. Vanwassenhove, R. Baets and P. Van Daele, University of Gent, IMEC, Dept. Information Technology, St. Pietersnieuwstraat 41, 9000 Gent, Belgium ; J. Van Koetsem, L. Van den Torren, FCI Belgium, A. Spinoystr. 8, Mechelen, Belgium | |
| K-IV.3 | 14 :40-15 :00 | EXCIMER LASER FABRICATION OF DIFFRACTIVE OPTICAL ELEMENTS, R.J. Winfield, M. Meister and G.M. Crean, National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland; S. Paineau, Thomson-CSF, Laboratoire Central De Recherches, Domaine de Corbeville, 91404 Orsay Cedex, France | |
| K-IV.4 | 15 :00-15 :20 | MICROCAVITIES IN MACROPOROUS SILICON BASED TWO-DIMENSIONAL PHOTONIC CRYSTALS; A. Birner, A.-P. Li, F. Müller, U. Gösele, P. Kramper*, V. Sandoghdar*, J. Mlynek*, P. Villeneuve**, V. Lehmann***, MPI of Microstructure Physics, Weinberg 2, 06120 Halle, Germany ; *Universität Konstanz, Fakultät für Physik, Universitätsstraße 10, 78457 Konstanz, Germany ; **Massachusetts Institute of Technology, Physics Department, 77 Massachusetts Avenue, Cambridge, MA 02139, USA, *** Siemens AG, Dept. ZT ME 1, Otto-Hahn-Ring 6, 81730 München, Germany | |
| K-IV.5 | 15 :20-15 :40 | PHOTONIC BAND STRUCTURES OF 2D NON-CIRCULAR AIR LATTICES IN Si, R. Hillebrand1, W. Hergert2 and W. Harms1, 1MPI of Microstructure Physics, Weinberg 2, 06120 Halle, 2Department of Physics, MLU Halle, Friedemann-Bach-Platz 6, 06108 Halle, Germany | |
| K-IV.6 | 15 :40-16 :00 | COOPERATIVE TWO-PHOTON EFFECTS IN CHALCOGENIDE PHOTORESISTS, B.G. Sfez, G. Rosenblum, Z. Kottler, Electro-Optics Department, NRC Soreq, 81800 Yavne, Israel and V. Lyubin, M. Klebanov, Department of Physics, Ben-Gurion University, 84105 Beer-Sheva, Israel |
End of Symposium K
