Symposium Organizers:
Markus THOENISSEN, Research Center Juelich, Juelich, Germany
Androula G. NASSIOPOULOU, NCRS "Demokritos", Institute of Microelectronics, Greece
Philippe M. FAUCHET, Department of Electrical Engineering, University of Rochester, USA
The assistance provided by FZJ Germany is acknowledged with gratitude.
Tuesday, June 1, 1999 - Morning
Mardi 1er juin 1999, Matin
| I-I.1 | 8:30-9:00 | Invited | ELECTROCHEMICAL PREPARATION OF POROUS SEMICONDUCTORS: FROM PHENOMENOLOGY TO UNDERSTANDING, J.N. Chazalviel, F. Ozanam, LPMC, CNRS-Ecole Polytechnique, 91128 Palaiseau, France and R.B. Wehrspohn, Philips Research Laboratories, Redhill, Surrey RH1 5HA, UK |
| I-I.2 | 9:00-9:30 | Invited | FROM MACROPORES TO MICROPORES: THE SCHOTTKY THEORY APPLIED TO A NON-PLANAR SURFACE, V. Lehmann Siemens, ZT ME 1, 81730 Munich, Otto-Hahn-Ring 6, Germany |
| I-I.3 | 9:30-9:45 | PORE FORMATION MECHANISMS FOR THE Si-HF SYSTEM, J. Carstensen, M. Christophersen, H. Föll, Materials Science, Faculty of Engineeering, Christian-Albrechts-University, 24143 Kiel, Germany | |
| I-I.4 | 9:45-10:00 | FORMATION OF WIDE PORES IN SILICON BY ELECTROCHEMICAL ETCHING IN HYDROFLUORIC ACID, P. Kleinmann*, J. Linnros and S. Petersson, Departmento of Electroonics, Royal Institute of Technology, Electrum 229, 16440 Kista-Stockholm, Sweden, *Permanent address, Département de Physique des Matériaux, Université Claude Bernard, Lyon I, 43 Bd du 11 Novembre 1918, 69622 Villeurbanne Cedex, France | |
| 10:00-10:30 | BREAK | ||
| I-I.5 | 10:30-11:00 | Invited | OPTICAL PROPERTIES OF MULTILAYERED POROUS SILICON, R. Romestain, P. Ferrand and S. Setzu |
| I-I.6 | 11:00-11:15 | EFFECT OF CRYSTALLOGRAPHIC DIRECTIONS ON POROUS SILICON FORMATION IN PATTERNED SUBSTRATES, M. Guendouz, P. Joubert, Groupe de Microelectronique et Visualisation, IUT de Lannion, BP 150, 22302 Lannion Cedex, France and M. Khadraoui, M. Kandouci, Université Djillali Liabes, Sidi Bel Abbes, Algerie | |
| I-I.7 | 11:15-11:30 | Porous silicon quantum superlattices, G. Amato, G. Lérondel, D. Midellino, IENGF, Strada delle Cacce 91, 10135 Torino, Italy and A. Parisini, CNR-LAMEL, via P. Gobetti 101, 40129 Bologna, Italy | |
| I-I.8 | 11:30-11:45 | LATERAL VARIATION OF THE ETCHRATE OF POROUS SILICON BY PATTERNING, R. Arens-Fischer, M. Berger, D. Hunkel, M. Thoenissen, M. Marso, H. Lueth, Forschungszentrum Juelich GmbH, ISI, 52425 Juelich, Germany | |
| I-I.9 | 11:45-12:00 | APPLICATION OF FLICKER-NOISE SPECTROSCOPY IN STUDIES OF POROUS SILICON GROWTH AND PROPERTIES, V. Parkhutik, Technical University of Valencia, Cami de Vera s/n, 46071 Valencia, Spain; E.Yu. Budnikov, S.F. Timashev, Karpov Institute of Physical Chemistry, Vorontsovo Pole street 10, Moscow, Russia; A. Solovieva, N. Semenov Institute of Chemical Physics, Russian Academy of Science, Moscow, Russia | |
| I-I.10 | 12:00-12:15 | ELECTROCHEMICALLY OXIDIZED POROUS SILICON MICROCAVITIES, V. Mulloni and L. Pavesi, INFM and Dept. of Physics, University of Trento, Via Sommarive 14, 38050 Povo, Italy | |
| I-I.11 | 12:15-12:30 | REALISATION OF MEMBRANES FOR ATOMIC BEAM COLLIMATOR BY MACROPORE MICROMACHINING TECHNIQUE (MMT), A.M. Rossi, G. Amato, L. Boarino, C. Novero, Istituto Elettrotecnico Nazionale ìGalileo Ferrarisî, Strada delle Cacce 91, 10136 Turin, Italy | |
| 12:30-14:00 | LUNCH |
Tuesday June 1, 1999 - Afternoon
Mardi 1er juin 1999, Après-midi
| I-I.12 | 14:00-14:30 | Invited | NANOCOMPOSITE MATERIALS FROM POROUS SILICON, R. Hérino, Laboratoire de Spectrométrie Physique, Université Joseph Fourier de Grenoble, BP 87, 38402 St Martin d'Hères Cedex, France |
| I-I.13 | 14:30-14:45 | LUMINESCENCE AND STRUCTURAL PROPERTIES OF POROUS SILIOCN WITH ZnSe INTIMATE CONTACT, L. Montes, R. Hérino, Laboratoire de Spectrométrie Physique (UMR 5588), Université Joseph Fourier, BP 87, 38402 St Martin d’Hères Cedex, France | |
| I-I.14 | 14:45-15:00 | EFFECT OF ULTRATHIN POROUS LAYER ON THE PERFORMANCE OF Si SOLAR CELLS, O. Yavuzcetin and S. Kalem, TUBITAK, Institute of Electronics, P.O.Box 21, Gebze, Kocaeli 41470, Turkey | |
| I-I.15 | 15:00-15:15 | SPECTRAL RESPONSE OF POROUS SI BASED PHOTOVOLTAIC DEVICES, B. Nal and S.C. Bayliss, Solid State Research Centre, Faculty of Applied Sciences, De Montfort University, The Gateway, Leicester LE1 9BH, UK | |
| I-I.16 | 15:15-15:30 | DESIGN OF POROUS SILICON ANTIREFLECTION COATING FOR SILICON SOLAR CELLS, S. Strehlke, S. Bastide, J. Guillet and C. Lévy-Clément, Laboratoire de Physique des Solides de Bellevue, CNRS, 1 place Aristide Briand, 92195 Meudon, France | |
| I-I.17 | 15:30-15:45 | DEVELOPMENT AND CHARACTERIZATION OF POROUS SILICON BASED SOLAR SENSORS AND CELLS, R.J. Martín-Palma, R. Guerrero-Lemus, J.D. Moreno and J.M. Martínez-Duart, Departamento de Física Aplicada, C-12, Universidad Autónoma de Madrid, 28049 Cantoblanco, Madrid, Spain | |
| 15:45-16:15 | BREAK | ||
| I-I.19 | 16:15-16:45 | -Invited- | PROGRESS TOWARDS ACHIEVING OPTOELECTRONIC INTEGRATED CIRCUIT FUNCTIONALITY USING POROUS SILICON WAVEGUIDE COMPONENTS, T.M. Benson, H.F. Arrand, P. Sewell, University of Nottingham, UK; A. Loni, DERA, Malvern, UK; R.J. Bozeat, Bookham Technology, UK; M. Krüger, Bosch GmbH, Germany; R. Arens-Fischer, M. Thönissen, H. Lüth, ISI Jülich, Germany |
| I-I.20 | 16:45-17:00 | POROUS SILICON LAYER USED AS A HUMIDITY SENSOR, B. Sorli, M. Garcia, A. Benhida, A. Giani, F. Delannoy, A. Boyer, A Foucaran, Centre d’Electronique et de Micro-optoelectronique de Montpellier, Université Montpellier II, Place E. Bataillon, 34095 Montpellier cedex 05, France | |
| I-I.21 | 17:00-17:15 | PERMEATED POROUS SILICON MEMBRANE INTEGRATED WITH HEATER AND TEMPERATURE SENSOR FOR HYDROCARBON DETECTION, R. Angelucci, A. Poggi, L. Dori, P. Maccagnani, F. Tamarri, CNR LAMEL-Institute, via Gobetti 101, 40129 Bologna, Italy | |
| I-I.22 | 17:15-17:30 | INTEGRATED PHOTOMETER WITH POROUS SILICON INTERFERENCE FILTRS, D. Hunkel, M. Marso, R. Butz, R. Arens-Fischer and H. Lüth, Institute of Thin Film and Ion Technology (ISI), Research Centre Jülich, 52425 Jülich, Germany | |
| I-I.23 | 17:30-17:45 | HYBRID INTEGRATION OF OPTOELECTRONIC DEVICES BASED ON POROUS SILICON, V. Yakovtseva, N. Kazuchits, L. Dolgyi, N. Vorozov, Belarusian State University of Informatics and Radioelectronics, P.Brovka 6, 220027 Minsk, Belarus and V. Bondarenko, M. Balucani, G. Lamedica, and A. Ferrari, INFM Unit 6 Rome University La Sapienza, via Eudossiana 18, 00184 Roma, Italy | |
| I-I.24 | 17:45-18:00 | BIOCHEMICAL SENSORS WITH STRUCTURED AND POROUS SILICON CAPACITORS, M.J. Schöning, M. Thust, P. Kordos and H. Lüth, Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany | |
| I-I.25 | 18:00-18:15 | LED BASED ON AN ANODICALLY OXIDIZED SI/POROUS SILICON HETEROJUNCTION, R. Chierchia, V. Mulloni and L. Pavesi, INFM and Dept. of Physics, University of Trento, Via Sommarive 14, 38050 Povo, Italy; P.G. Bellutti, IRST-ITC, Via Sommarive 18, 38050 Povo, Italy | |
| I-I.26 | 18:15-18:30 | ELECTRICAL AND Optical characterizations of porous silicon light emitting diode with an alumina passivating coating, S. Lazarouk, S. Katsouba, Belarusian State University of Informatics and Radioelectronics, P. Browka 6, 220027 Minsk, Belarus, A. Tomlinson, Institute of Materials Chemistry, Area della Ricerca di Roma, C.N.R., C.P.10 Monterotondo Staz., 00016 Rome, Italy, and C. Mazzoleni, V. Mulloni, S. Benedetti, G. Mariotto, L. Pavesi, Istituto Nazionale di Fisica della Materia and Dipartimento di Fisica, Universita di Trento – Via Sommarive 14, 38050 Povo (TN), Italy |
Wednesday June 2, 1999 - Afternoon
Mercredi 2 juin 1999, Après-midi
| I-II.1 | 14:00-14:30 | Invited | INTRINSIC MICROCRYSTALLINE SILICON DEPOSITED BY VHF-GD (VERY HIGH FREQUENCY-GLOW DISCHARGE): A NEW MATERIAL FOR PHOTOVOLTAICS AND OPTOELECTRONICS, A. Shah, J. Meier, U. Kroll, P. Torres, L. Feitknecht, S. Dubail, J. Dubail, E. Sauvain, M. Goerlitzer, N. Wyrsch, M. Vanecek*, Institute for Microtechnology (IMT), University of Neuchâtel, 2000 Neuchâtel, Switzerland; *Academy of Sciences of the Czech Republic, Prague |
| I-II.2 | 14:30-14:45 | APPLICATION OF Nd:YLF LASER TO AMORPHOUS SILICON CRYSTALLIZATION PROCESS, P. Delli Veneri, M. L. Addonizio, A. Imparato, C. Minarini, C. Privato, E. Terzini, ENEA - CR Portici - Via Vecchio Macello 80055 Portici, Italy | |
| I-II.3 | 14:45-15:00 | ELECTRONIC PROPERTIES OF HIGHLY B AND P DOPED THIN SI LAYERS GROWN BY ECR-CVD, S. Brehme, K. Lips, P. Kanschat, J. Platen, I. Sieber and W. Fuhs, Hahn-Meitner-Institut, Rudower Chaussee 5, 12489 Berlin, Germany | |
| I-II.4 | 15:00-15:15 | LPCVD growth of DENSE Si quantum dots for nanoelectronic devices, T. Baron, F. Martin**, A. Pépin*, L. Palun**, C. Vieu*, LPM, UMR 5511 CNRS, 20 Av. Albert Einstein, 69622 Villeurbanne Cedex, France, *L2M, UPR 20 CNRS, CNET B.P. 107, 196 Av. Ravera, 92225 Bagneux, France, **Leti-CEA Technologies Avancées, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France | |
| I-II.5 | 15:15-15:30 | PHOTO CONDUCTIVE EFFECTS IN SPARK-PROCESSED SILICON, M.E Stora and R.E. Hummel, University of Florida, Department of Materials Science and Engineering, Gainesville Fl 32611, USA | |
| I-II.6 | 15:30-15:45 | ULTRAFAST CARRIER DYNAMICS IN UNDOPED MICROCRYSTALLINE SILICON, J. Kudrna, P. Malý, F. Trojanek, Faculty of Mathematics and Physics, Charles University Prague, Czech Republic, I. Pelant, Institute of Physics, Academy of Sciences of the Czech Republic, Prague, J. Meier, U. Kroll, Institut de Microtechnique, Université de Neuchâtel, 2000 Neuchâtel, Switzerland | |
| 15:45-16:15 | BREAK | ||
| I-II.7 | 16:15-16 :45 | Invited | NUCLEATION AND GROWTH OF HETEROEPITAXIAL QUANTUM DOTS, J. Tersoff, IBM T.J. Watson Research Center, Yorktown Heights NY 10598, USA. |
| I-II.8 | 16:45-17:00 | STM STUDY OF THE Ag/GaAs(001)2X4 INTERFACE AND ISLAND FORMATION, M Fanfoni, F. Arciprete, E. Placidi, F. Patella, N. Motta, A. Sgarlata, A. Boselli and, A. Balzarotti, Istituto Nazionale per la Fisica della Materia, Dipartimento di Fisica, Universita' di Roma ''Tor Vergata'', Via della Ricerca Scientifica 1, 00133 Roma, Italy | |
| I-II.9 | 17:00-17:15 | Si OVERGROWTH OF SELF-ASSEMBLED Ge CLUSTERS ON Si(001) - A SCANNING TUNNELING MIRCROSCOPY STUDY, M. Kummer, B. Vögeli and H. von Känel, Laboratorium für Festkörperphysik, ETH Hönggerberg, 8093 Zürich, Switzerland | |
| I-II.10 | 17:15-17:30 | ALIGNMENT OF Ge ISLANDS BY STEP BUNCHES ON VICINAL Si(113), Jian-hong Zhu, K. Brunner, G. Abstreiter, Walter Schottky Institut, Technische Universität München, Am Coulombwall, 85748 Garching, Germany | |
| I-II.11 | 17:30-17:45 | BIMODAL DISTRIBUTION OF GE ISLANDS ON SI(001) GROWN BY LPCVD, Michael Goryll, Lili Vescan and Hans Lueth, Institute of Thin Film and Ion Technology, Research Centre Juelich, 52425 Juelich, Germany | |
| I-II.12 | 17:45-18:00 | ADVANCES IN THE FIELD OF POLY-Ge ON Si NEAR INFRARED PHOTODETECTORS, G. Masini, L. Colace, F. Galluzzi and G. Assanto, Dipartimento di Ingegneria Elettronica, Universita di Roma Tre, V. Vasca Navale 84, 00146 Roma, Italy |
Poster Session I
| I-I/P1 | CHEMICAL CHARACTERIZATION AND HYDROGEN ROLE IN THE ELECTRICAL AND OPTICAL PROPERTIES OF MICROCRYSTALLINE SILICON THIN FILMS GROWN BY RF SPUTTERING M.F. Cerqueira, J.A. Ferreira, L. Rebouta, P. Roca i Cabarrocas*, Departamento de Fisica, Universidade do Minho, Largo do Paco, 4709 Braga Codex, Portugal; *Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 CNRS), Ecole Polytechnique, 91128 Palaiseau, France |
| I-I/P2 | EFFECT OF "SOFT" ETCHING OF NANO-POROUS SILICON: COATING OF SOLAR CELLS, Kestutis Grigoras, Julija Sabataityte, Irena äimkiene, Semiconductor Physics Institute, Goötauto 11, 2600 Vilnius, Lithuania |
| I-I/P3 | ELECTRON EMISSION SPECTROSCOPY OF POROUS SILICON SURFACES, Pavlo V. Galiy, Taras M. Nenchuk, Josyp M. Stakhira, Physics Department, Lviv State University, 50 Dragomanov str., 290005 Lviv, Ukraine |
| I-I/P4 | ELECTRONIC TRANSPORT IN porous silicon OF LOW POROSITY MADE ON p+ SUBSTRATE, L.A. Balagurov, D.G. Yarkin, and E.A. Petrova, Institute of Rare Metals, B. Tolmachevsky per. 5, Moscow, 109017 Russia |
| I-I/P5 | ON THE MODEL REPRESENTATION OF PHYSICAL PROCESSES IN POROUS SEMICONDUCTORS, V. Aroutiounian, M. Ghoolinian, Yerevan State University, 1A. Manoukian St., Yerevan 375049, Republic of Armenia |
| I-I/P6 | PHOTOCHEMICAL ETCHING OF Si AND POROUS Si IN AQUEOUS HF, Lynne Koker and Kurt W. Kolasinski, School of Chemistry, University of Birmingham, Edgbaston, Birmingham, B15 2TT, United Kingdom |
| I-I/P7 | FORMATION AND CHARACTERIZATION OF CdS/METHYL GRAFTED POROUS SILICON JUNCTIONS, M. Gros-Jean, R. Hérino, Laboratoire de Spectrométrie Physique, Université Joseph Fourier de Grenoble, BP 87, 38402 Saint Martin d’Hères Cedex, France; J.N. Chazalviel, F. Ozanam, Laboratoire de Physique de la Matière Condensée, Ecole Polytechnique, 91128 Palaiseau Cedex, France; D. Lincot, Laboratoire d’Electrochimie et de Chimie Analytique, ENSCP, 75235 Paris Cedex 05, France |
| I-I/P8 | AC IMPEDANCE OF THE SI-OXIDIZED POROUS SI-METAL STRUCTURES, A.N. Nevzorov, S.N. Kozlov, A.A. Petrov, M.V.Lomonosov Moscow State University, Faculty of Physics, 119899 Moscow, Russia. |
| I-I/P9 | TRAPPING CENTRES IN NANOCRYSTALLINE POROUS SILICON FILMS, M.L.N. Ciurea, M.V. Draghici, National Institute of Materials Physics, P.O. Box MG-7, Bucharest-Magurele, Romania and V.M. Iancu, Physics Department, University "Politehnica" of Bucharest, 313 Spaiul Independentei, 77206 Bucharest, Romania |
| I-I/P10 | EFFECTIVE REFRACTIVE INDEX AND COMPOSITION OF OXIDIZED POROUS SILICON FILMS, E.V. Astrova, Ioffe Physical Technical Institute, Polytekhnicheskaya 26, 194021 St. Petersburg, Russia |
| I-I/P11 | Pore propagation directions in p and p+ porous silicon, E. Vazsonyi, G. Battistig, Z.E. Horvath, P. Petrik, G. Kadar, KFKI-Research Institute for Materials Science, POB 49, 1525 Budapest, Hungary; F. Pászti, E. Szilágyi KFKI-Research Institute for Particle and Nuclear Physics, POB 49, 1525 Budapest, Hungary; J.L. Cantin, GPS. University of Paris 7 and 6, Tour 23, 2. Place Jussieu-75251, Paris Cedex 05, France; D. Vanhaeren , IMEC, Kapeldreef 75, 3001 Leuven, Belgium. |
| I-I/P12 | PLASMA PASSIVATION OF POROUS SILICON, E. Bhattacharya and K. Ravi Kiran, Department of Electrical Engineering, IIT, Madras, Chennai 600036, India |
| I-I/P13 | A NEW METHOD BASED ON A BIOAFFINIC SENSOR UTILIZING THE PHOTOLUMINESCENCE OF POROUS SILICON TO MONITOR PROTEIN SUBSTANCES IN THE AIR, V. Starodub, D. Urge-Vorsatz*, N. Starodub, Institute of Biochemistry of National Academy of Sciences of Ukraine, 9 Leontovicha Str., Kiev –252030, Ukraine; *Central European University, 9 Nador ut. Budapest, Hungary |
| I-I/P14 | ELECTRON TRANSPORT IN METAL-THIN POROUS SILICON-SILICON STRUCTURES, V.I. Strikha, V.A. Vikulov, V.A. Skryshevsky, Radiophysics Department, Kiev Shevchenko University, 64, Volodimirskaya, 252017 Kiev, Ukraine and J.-R. Martin, E. Souteyrand, IFoS-Groupe PCI, Ecole Centrale de Lyon, 36 av. Guy de Collongue, BP 163, 69131, Ecully Cedex, France |
| I-I/P15 | X-ray investigations of high-temperature oxidation of porous silicon, V.M. Kashkarov, E.Yu. Manukovskii, V. Terekhov, S.Y. Turischev, Voronezh State University, Universitetskaya pl. 1, Voronezh 394694, Russia. |
| I-I/P16 | A STUDY OF EXITON AND UNCORRELATED CARRIER DYNAMICS IN POROUS SILICON, V. Grivickas, Institute of Material Research and Applied Sciences, Vilnius University, 2054 Vilnius, Lithuania, J. Linnros, Department of Electronics, Royal Institute of Technology, Electrum 229, S-164 40 Kista-Stockholm, Sweden, and J. A. Tellefsen, Department of Physics II, Royal Institute of Technology, S-100 44 Stockholm, Sweden |
| I-I/P17 | ADSORPTION IN MESOPOROUS SILICON, E.A. Tutov, A.Yu. Andryukov. Voronezh State University, Universitetskaya pl. 1, Voronezh 394693, Russia. |
| I-I/P18 | THERMALLY STIMULATED DETRAPPING IN POROUS SILICON, C.E. Anastasiadis, D.A. Trianteis, Dept. Of Electronics, Technological Educational Institution, Egaleo, 122 10 Athens, Greece |
| I-I/P19 | ROOM TEMPERATURE OXIDATION OF POROUS SILICON IN AIR ATMOSPHERE, Petrova E.A., Bogoslovskaya K.N., and Balagurov L.A., Institute of Rare Metals, B. Tolmachevsky per. 5, Moscow, 109017, Russia |
| I-I/P20 | CARRIER PICOSECOND DYNAMICS AT POROUS SILICON–SILICON WAFER INTERFACE: SURFACE RECOMBINATION I.Mikulskas, R.Tomasiunas, Institute of Material Science and Applied Research, Vilnius University, Sauletekio 10, 2040 Vilnius, Lithuania and K.Grigoras, I.Simkiene, Semiconductor Physics Institute, Gostauto 11, 2600 Vilnius, Lithuania |
| I-I/P21 | SURFACE VIBRATIONS IN NANOPOROUS MEMBRANES AND HETEROSTRUCTURES BASED ON III-V COMPOUNDS, I.M. Tiginyanu, Technical University, MD-2004 Chisinau, Moldova ; G. Irmer and J. Monecke, Technical University, 09596 Freiberg, Germany ; C. Schwab, CNRS/PHASE, BP 20, 67037 Strasbourg, France and H.L. Hartnagel, Technical University, 64283 Darmstadt, Germany |
| I-I/P22 | TRANSPORT MECHANISMS AND ENERGY BAND DIAGRAM IN ZnO/POROUS Si LIGHT EMITTING DIODES, D. Dimova-Malinovska Central Laboratotry for Solar Energy and New Energy Sources,Bulg. Acad.Sci., 72, Tzarigradsko Chausse Blvd., 1784 Sofia, Bulgaria |
| I-I/P23 | SILICON SURFACE PROPERTIES AFTER CATHODIC ELECTROCHEMICAL TREATMENT, S.P. Zimin, D.S. Zimin, Yaroslavl State University, Sovetskaya 14, Yaroslavl 150000 Russia and M.N. Preobrazhensky, Institute of Microelectronics RAS, Universitetskaya 21, Yaroslavl 150007 Russia |
| I-I/P24 | IN SITU, IN Ar AND IN AIR PHOTOLUMINESCENCE STUDIES OF PHOTOCHEMICAL POROUS SILICON, Kurt W. Kolasinski,* Lynne Koker,* John C. Barnard= and Richard E. Palmer,= , *School of Chemistry and = School of Physics and Space Science, University of Birmingham, Edgbaston, Birmingham, B15 2TT, UK |
| I-I/P25 | HIGH ASPEC RATIO MICROSTRUCTURES USING MACROPOROUS N-TYPE SILICON, R. Angelucci, A. Poggi, P. Pozzi, F. Corticelli, CNR LAMEL-Institute, via Gobetti 101, 40129 Bologna, Italy; U. Mastromatteo, ST Microelectronics, via Tolomeo 1, 20010 Cornaredo (MI), Italy |
| I-I/P26 | POROUS SILICON NANOCRACKING, G. Amato, G. Lérondel, L. Boarino, A. M. Rossi, IENGF, Strada delle Cacce 91,10135 Torino, Italy, and A. Parisini, CNR-LAMEL, via P. Gobetti 101, 40129 Bologna, Italy. |
| I-I/P27 | PREDICTION OF OPTICAL PROPERTIES of porous silicon layers, V. Yerokhov, I. Melnyk, A. Tsisaruk, I. Semochko, Semiconductor Electronic Department, State university "Lviv Polytechnic", Box 1050, 290045 Lviv, Ukraine |
| I-I/P28 | PHYSICAL PROPERTIES OF POROUS Si/SixGe1-x MULTILAYERS, O. Yavuzcetin and S. Kalem, TUBITAK, Institute of Electronics, P.O.Box 21, Gebze, Kocaeli 41470, Turkey |
| I-I/P29 | SECOND HARMONIC GENERATION IN POROUS SILICON BASED PHOTONIC BANDGAP STRUCTURES, A.B. Fedotov*, L.A. Golovan*, P.K. Kashkarov*, N.I. Koroteev*, M.G. Lisachenko*, A.N. Naumov*, D.A. Sidorov-Biryukov*, V.Yu. Timoshenko*,** and A.M. Zheltikov*; *Moscow State Lomonosov University, Faculty of Physics and International Laser Center, 119899 Moscow, Russia; **Technische Universität München, Physik Dept. E16, 85748 Garching, Germany |
| I-I/P30 | EFFECT OF THE QUANTUM CONFINEMENT ON THE OPTICAL ABSORPTION OF POROUS SILICON, INVESTIGATED BY A NEW IN-SITU METHOD, H. Diesinger, A. Bsiesy, R. Hérino, B. Gelloz, Laboratoire de Spectrométrie Physique, Université Joseph Fourier (Grenoble 1), BP 87, 38402 Saint Martin d’Hères, France |
| I-I/P31 | Photosensitivity of Porous Silicon Schottky Diodes Formed in the Transition Mode, V.I. Blynski, S.A. Malyshev, T.P. Matskevich, Institute of Electronics, National Academy of Sciences of Belarus, 22 Lagoiski Trakt, 220090 Minsk, Republic of Belarus and S.K. Lazaruk, Bielorussian State University of Informatics and Electronics, 6 P. Brovka Str., 220600 Minsk, Republic of Belarus |
| I-I/P32 | MICROCRYSTALLINE DIAMOND DEPOSITION ON POROUS SILICON HOST MATRIX, V. Baranauskas, B.B. Li, M.C. Tosin, A. C. Peterlevitz and D.C. Chang, Av. A. Einstein N.400, 13083-970, FEEC, UNICAMP, Campinas - SP, Brazil |
| I-I/P33 | EFFECTS OF ANODE GEOMETRY IN THE MICROSTRUCTURE OF POROUS SILICON, INVESTIGATED BY ATOMIC FORCE MICROSCOPY, V. Baranauskas and D.C. Chang, Av. A. Einstein N.400, 13083-970, FEEC, UNICAMP, Campinas - SP, Brazil |
| I-I/P34 | FEATURES OF BAND-GAP STRUCTURE OF LIGHT EMITTING SILICON LAYERS, L.A. Matveeva, T.Ya. Gorbach, S.V. Svechnikov, E.F. Venger, Institute of Semiconductor Physics, National Academy of Science of Ukraine, prospect Nauki 45, 252028 Kiyv-28, Ukraine. |
| I-I/P35 | POLY(P PHENYLENE VINYLENE) / POROUS COMPOSITE MATERIAL, T.P. Nguyen, M. Lekehal, P. LeRendu, IMN, Université de Nantes, 44322 Nantes Cedex 3, France; P. Joubert, GMV, Université de Rennes 1, I.U.T. de Lannion, BP 150, 22302 Lannion Cedex, France, P. Destruel, LGET, Université Paul Sabatier, 31062 Toulouse Cedex, France |
| I-I/P36 | MODELING THE FORMATION OF THE POROUS MEDIUM UNDER ELECTROCHEMICAL ETCHING,A.A. Efremov, A.V. Sarikov, Institute of Semiconductor Physics, 45 Nauki avenue, Kiev 252028, Ukraine |
| I-I/P37 | MODELING PROCESSES OF GETTERING IMPURITIES BY THE POROUS SILICON LAYERS, A.A. Efremov, A.V. Sarikov, Institute of Semiconductor Physics, 45 Nauki avenue, Kiev 252028, Ukraine |
| I-I/P38 | ELLIPSOMETRIC CHARACTERIZATION OF AS-PREPARED AND OXIDIZED POROUS SILICON LAYER STRUCTURES, T. Lohner, M. Fried, P. Petrik, O. Polgar, J. Gyulai, Research Institute for Technical Physics and Materials Science, 1525 Budapest, P.O.B. 49, Hungary; W. Lehnert, Fraunhofer-Institut für Integrierte Schaltungen, Schottkystrasse 10, 91058 Erlangen, Germany |
| I-I/P39 | CURRENT TRANSIENT ANALYSIS OF THE OXIDIZING PROCESSES IN TEH COMPLETE ANODIC REGIME OT HTE Si-HF-SYSTEM, G. Hasse, J. Carstensen, H. Föll, Materials Science, Faculty of Engineeering, Christian-Albrechts-University, 24143 Kiel, Germany |
| I-I/P40 | CRYSTAL ORIENTATION AND ELECTROLYTE DEPENDENCE FOR MACROPORE NUCLEATION AND STABLE GROWTH ON P-TYPE Si, M. Christophersen, J. Carstensen, A. Feuerhake, H. Föll, Materials Science, Faculty of Engineeering, Christian-Albrechts-University, 24143 Kiel, Germany |
| I-I/P41 | TRANSMISSION ELECTRON MICROSCOPY INVESTIGATIONS OF THE FORMATION OF MACROPORES IN N-Si(001)/(111) AND P-Si(001), Ch. Jäger, B. Finkenberger, W. Jäger, Center for Microanalysis, Faculty of Engineeering, Christian-Albrechts-University, 24143 Kiel, Germany; M. Christophersen, J. Carstensen, H. Föll, Materials Science, Faculty of Engineeering, Christian-Albrechts-University, 24143 Kiel, Germany |
| I-I/P42 | INORGANIC FULLERENE-LIKE MATERIALS AND NANOTUBES (IF) FROM LAYERED COMPOUNDS, R. Tenne, Y. Feldman, M. Homyonfer, G.L. Frey, Y. Rosenfeld, Hacohen, Department of Materials and Interfaces, Weizmann Institute, Rehovot 76100, Israel; J. Sloan and J.L. Hutchison, Department of Materials, Oxford University, Parks Road OX1 3P11, UK |
| I-I/P43 | ELECTROLUMINESCENCE FROM PHOTO-CHEMICALLY ETCHED SILICON, N. Yamamoto, A. Sumiya and H. Takai, Tokyo Denki University, 2-2 Kanda Nishikicyo, Chiyodaku, Tokyo 101-8457, Japan |
| I-I/P45 | TIME-RESOLVED ELECTROLUMINESCENCE OF EFFICIENT ANODICALLY OXIDIZED POROUS SILICON, B. Gelloz and N. Koshida, Department of Electronic and Information Eng., Faculty of Technology, Tokyo Univ. A&T, Koganei, Tokyo 184 8588, Japan. |
| I-I/P46 | NO2 MONITORING AT ROOM TEMPERATURE BY A POROUS SILICON GAS SENSOR, C. Baratto, E. Comini, G. Faglia, G. Sberveglieri, Gas Sensor Laboratory, University of Brescia, Via Valotti 9, 25123 Brescia, Italia and L. Boarino, G. Amato, A. M. Rossi, G. Lérondel, Istituto Elettrotecnico Nazionale Galileo Ferraris, Strada delle Cacce 91, 10135 Torino, Italia |
| I-I/P47 | ERBIUM PHOTOLUMINESCENCE IN ION IMPLANTED POLYSILOXANE FILMS, J.C. Pivin, Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, Batiment 108, 91405 Orsay Campus, France; N.V. Gaponenko, A.V. Mudryi, V.V. Shushunova, Belarusian State University of Informatics and Radioelectronics, 220027 Minsk, Belarus and B. Hamilton, University of Manchester Institute of Science and Technology, Manchester M60 1QD, UK |
| I-I/P48 | EFFECT OF LASER IRRADIATION ON THE LUMINESCENT PROPERTIES OF POROUS SILICON, V.A. Makara, O.V. Vakulenko, V.B. Shevchenko, O.L. Dacenko, and O.V. Rudenko, Taras Shevchenko Kyiv Univ., 6 Glushkova Prosp., 252127 Kyiv, Ukraine |
| I-I/P49 | LIGHT EMISSION FROM POROUS SILICON EXCITED BY VARIOUS METHODS, S. Nepijko, D. Ievlev, W. Schulze, G. Ertl, Fritz-Haber-Institut der MPG, Faradayweg 4-6, 14195 Berlin, Germany; D. Dan’ko, R. Fedorovich, A. Naumovets, Institute of Physics, Ukrainian Academy of Sciences, Prospect Nauki 46, 252022 Kiev, Ukraine |
Thursday June 3, 1999 - Morning
Jeudi 3 juin 1999, Matin
| I-III.1 | 8:30-9:00 | Invited | ELECTROSTATIC PROPERTIES OF SINGLE SEMICONDUCTOR NANOCRYSTALS, T.D. Krauss and L.E. Brus, Columbia University, New York, NY 10027, USA |
| I-III.2 | 9:00-9:15 | FORMATION OF d-LAYERS OF Ge NANOCRYSTALs IN SiO2, K.H. Heinig, B. Schmidt, A. Markwitz, M. Strobel, R. von Borany and M. Klimenkov, Forschungszentrum Rossendorf, Postfach 510119, 01314 Dresden, Germany | |
| I-III.3 | 9:15-9:30 | CORRELATION OF VISIBLE EMISSION WITH NUCLEATION AND GROWTH KINETICS OF Si NANOCRYSTALS IN SiO2, M. Lopez, B. Garrido, C. Bonafos, A. Perez, J.R. Morante, Dep. d’Elect., Univ. Barcelona, Marti i Franques 1, 08028 Barcelona, Spain; J. Monserrat, CNM, Campus UAB, 08193 Bellaterra, Spain. | |
| I-III.4 | 9:30-9:45 | CORRELATION OF DOT SIZE DISTRIBUTION WITH LUMINESCENCE AND ELECTRICAL TRANSPORT OF Si QUANTUM DOTS EMBEDDED IN SiO2, S. Lombardo, S. Coffa, C. Spinella, CNR-IMETEM, Catania, Italy; C. Gerardi, F. Ferrari, N. Nastasi, STMicroelectronics, Central R & D, Catania, Italy | |
| I-III.5 | 9:45-10:00 | LASER-INDUCED NANOCRYSTALLINE SILICON FORMATION IN a-SiO MATRICES, M.C. Rossi, S. Salvatori, F. Galluzzi and G. Conte, Dip. Ingegneria Elettronica and INFM, Universita di Roma Tre, V. Vasca Navale 84, 00146 Roma, Italy | |
| 10:00-10:30 | BREAK | ||
| I-III.6 | 10:30-11:00 | Invited | NANOCRYSTALLINE SILICON SUPERLATTICES: BUILDING BLOCKS FOR QUANTUM DEVICES, L. Tsybeskov, G.F. Grom, M. Jungo, L. Montes and P.M. Fauchet, Department of Electrical Engineering, University of Rochester, USA; J.P. McCaffrey, J.-M. Baribeau, G.I. Sproule, and D.J. Lockwood, Institute for Microstructural Sciences, National Research Council, Ottawa, Canada |
| I-III.7 | 11:00-11:15 | DIELECTRIC CHARACTERISTICS OF nc-Si/CaF2 MULTI QUANTUM WELLS, V. Tsakiri, V. Ionnou-Sougleridis, A.G. Nassiopoulou, National Center for Scientific Research ‘Demokritos", Institute of Microelectronis, P.O.Box 60228, 15310 Aghia Paraskevi, Athens, Greece and F. Bassani, S. Ménard, F. Arnaud d’Avitaya, Centre de Recherce sur les Mécanismes de la Croissance Cristalline, Campus de Luminy, Case 913, 13288 Marseille, France | |
| I-III.8 | 11:15-11:30 | TIME-RESOLVED OPTICAL STUDIES OF SELF-ASSEMBLED QUANTUM DOTS IN MICROCAVITIES, V. Zwiller, J. Persson, M.E. Pistol, W. Seifert and L. Samuelson, Solid State Physics, Lund University, S-22100 Lund, Sweden | |
| I-III.9 | 11:30-11:45 | SELF-ASSEMBLED GAN QUANTUM DOTS: A CASE OF DOTS WITH A GIANT PIEZOELCTRIC FIELD, N.T. Pelekanos, J. Simon, C. Adelmann, B. Daudin G. Feuillet, J.L. Rouvière, Département de Recherche Fondamental sur la Matière Condensée, CEA/grenoble, France and G. Fishman, Laboratoire de Spectrométrie Physique, CNRS, 38402 Saint Martin d’Hères, France | |
| I-III.10 | 11:45-12:00 | MAGNETO-PHOTOLUMINESCENCE STUDY OF ENERGY LEVELS OF SELF-ORGANIZED InAs/GaAs QUANTUM DOTS, Karla Kuldová, Jirí Oswald, Jan Zeman, Eduard Hulicius, Institute of Physics AV CR Cukrovarnická 10, 16253 Prague, Czech republic and Stéphane Jullian, Marek Potemski, Grenoble High Magnetic Field Laboratory, 25, Avenue des Martyrs BP 166, 38042 Grenoble Cedex 9, France | |
| I-III.11 | 12:00-12:15 | ORDERED NUCLEATION OF Ge ISLANDS ON HIGH INDEX PLANES ON Si, L. Vescan, Institut für Schicht und Ionentechnik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany | |
| I-III.12 | 12:15-12:30 | GAS-PHASE SYNTHESIS OF SIZE-SELECTED PbS NANOPARTICLES, F.E. Kruis, H. Fissan, Process - and Aerosol Measurement Technology, Gerhard-Mercator-University Duisburg, 47048 Duisburg, Germany and B. Rellinghaus, Low-temperature Physics, Gerhard-Mercator-University Duisburg, 47048 Duisburg, Germany | |
| 12:30-14:00 | LUNCH |
Thursday June 3, 1999 - Afternoon
Jeudi 3 juin 1999, Après-midi
| I-III.13 | 14:00-14:30 | Invited | NEW LIGHT ON THE OPTICAL AND ELECTRICAL PROPERTIES OF Si NANOCRYSTALS EMBEDDED IN SiO2, M.L. Brongersma, P.G. Kik, and A. Polman, FOM Institute for Atomic and Molecular Physics, Amsterdam, The Netherlands ; K.S. Min, E. Boer, H.A. Atwater, Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, USA. |
| I-III.14 | 14:30-14:45 | ENHANCED RARE EARTHS LUMINESCENCE IN Si NANOCRYSTALS, G. Franzò, CNR-IMETEM, Stradale Primosole 50, I-95121 Catania (Italy),V.Vinciguerra and F. Priolo INFM and Dipartimento di Fisica, Corso Italia 57, I-95129 Catania (Italy) | |
| I-III.15 | 14:45-15:00 | EXCITING ERBIUM IN SILICON NANOCRYSTAL DOPED SiO2, P.G. Kik, M.J.A. de Dood, M.L. Brongersma and A. Polman, FOM Institute Amolf, Kruislaan 407, 1098 SJ Amsterdam, The Netherlands | |
| I-III.16 | 15:00-15:15 | IMPROVEMENT IN THE LUMINESCENT PROPERTIES OF Si/CaF2 NANOSTRUCTURES, F. Bassani, S. Menard, I. Berbezier, F. Arnaud d’Avitaya, Centre de Recherche sur les Mecanismes de la Croissance Cristalline, Campus de Luminy – case 913, 13288 Marseille cedex 9, France and I. Milhalcescu, Lab. De spectrometrie physique, Universite Joseph Fourier, BP 87, 38402 Saint Martin d’Heres, France | |
| I-III.17 | 15:15-15:30 | LIGHT EMITTING PROPERTIES OF nc-Si/SiO2 SINGLE AND MULTILAYER STRUCTURES, P. Photopoulos, A.G. Nassiopoulou and A. Travlos, National Center for Scientific Research "Demokritos", Institute of Microelectronics, P.O.Box 60228, 15310 Aghia Paraskevi, Athens, Greece. | |
| I-III.18 | 15:30-15:45 | PHOTOLUMINESCENCE OF SILICON NANOCRISTALLITES: AN ASTROPHYSICAL APPLICATION, O. Guillois, G. Ledoux, C. Reynaud, CEA Saclay, SPAM, 91191 Gif/Yvette cedex, France, F. Huisken, B. Kohn, Max-Planck-Institute, 37073 Göttingen, Germany, V. Paillard, Laboratoire de Physique des solides, Université P. Sabatier, 31602 Toulouse Cedex 4, France | |
| 15:45-16:15 | BREAK | ||
| I-III.19 | 16:15-16:30 | WET CHEMICAL SYNTHESIS AND SPECTROSCOPIC STUDY OF CdHgTe NANOCRYSTALS WITH STRONG NEAR-INFRARED LUMINESCENCE, M.T. Harrison, S.V. Kershaw, M.G. Burt, B.T. Laboratories, Martlesham Heath, Ipswich, IP5 3RE, UK, and H. Weller, A. Eychmüller, A.L. Rogach*, Institute of Physical Chemistry, University of Hamburg, 20146 Hamburg, Germany. *permanent address: Physico–Chemical Research Institute, Belarussian State University, 220050 Minsk, Belarus. | |
| I-III.20 | 16:30-16:45 | COMPUTER-AIDED ANALYSIS OF TEM IMAGES OF CdSe/ZnSe QUANTUM DOTS, H. Kirmse, W. Neumann, T. Wiebach, R. Köhler, Humboldt University of Berlin, Department of Physics, Invalidenstasse 110, 10115 Berlin, Germany; K. Scheerschmidt and D. Conrad, Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany | |
| I-III.21 | 16:45-17:00 | FABRICATION OF SELF ORGANISED GE DOTS USING STRAIN INDUCED ROUTHENING, M. Abdallah, I. Berbeziern A. Ronda, CRMC2-CNRS, Campus de Luminy, Case 913, 13288 Marseille Cedex 9, France ; M. Serpentini, A. Souifi,G. Bremond, LPM-INSA, 20 av. A. Einsteing, 69621 Villeurbanne Cedex, France | |
| I-III.22 | 17:00-17:15 | AFM AND RHEED STUDY OF Ge/Si(001) QUANTUM DOTS MODIFICATION BY Si CAPPING, G. Dentel, C. Pirri, L. Simon, D. Bolmont, L. Kubler and J.L. Bischoff, Laboratoire de Physique et de Spectroscopie Electronique, Faculté des Sciences et Techniques, 4 rue des Frères Lumière, 68093 Mulhouse Cedex, France | |
| I-III.23 | 17:15-17:30 | GROWTH KINETICS OF GeNANOCRYSTALS EMBEDDED IN SiO2, C. Bonafos, B. Garrido, M. Lopez, A. Perez-Rodriguez, J.R. Morante, Dept. d’Electronica, Univ. de Barcelona, Marti i Franques 1, 08028 Barcelona, Spain; A. Claverie, G. Banassayag, CEMES/CNRS, BP 4347, 31055 Toulouse Cedex, France; A. Nejim, Univ. of Surrey, Guildford, Surrey GU2 5XH, UK | |
| I-III.24 | 17:30-17:45 | STRUCTURAL EVOLUTION AND PROPERTIES OF SnO2-TiO2 NANOCRYSTALLINE FILMS FOR GAS SENSORS, F. Edelman, H. Hahn and S. Seifried, Thin Films Division, Materials Science Department, Darmstadt University of Technology, 64287 Darmstadt, Germany, K. Zakrzewska, M. Radecka and P. Pasierb, Institute of Electronics, University of Mining and Metallurgy, 30-059 Krakow, Poland, P. Werner, Max-Planck-Institute of Microstructure Physics, 06120 Halle / Saale, Germany, A. Chack, V. Mikhelashvili and G. Eisenstein, Microelectronics Department, Technion, 32000 Haifa, Israel. | |
| I-III.25 | 17:45-18:00 | X-RAY STRUCTURE INVESTIGAION OF LATERAL SURFACE NANOSTRUCTURES, T. Baumbach, D. Lübbert, Fraunhofer Institut Zerstörungsfreie Prüfverfahren Saarbrücken and Dresden, Germany; P. Mikulik, V. Holy, Lab. Thin Films and Nanostructures, Masaryk University Brno, Czech Republic; M. Gailhanou, LURE, Université Paris Sud, Orsay, France; J. Schneck, L. Leprince, France Telecom, CNET/DTD, Bagneux, France; M. Jergel, Institut of Physics, Slovak Academy of Sciences, Bratislava, Slovakia |
Poster Session II
| I-II/P1 | ANNEALING EXPERIMENTS ON SUPERCRITICAL SI1-xGEx LAYERS GROWN BY RPCVD, K. Grimm, L. Vescan and H. Lueth, Institute of Thin Film and Ion Technology, Research Centre Juelich, 54245 Juelich, Germany |
| I-II/P2 | AUGER EFFECT ON THELIFETIME RECOMBINATION OF THE SLOW PL BAND IN Si1-xGex ALLOYS, R. Mghaieth, H. Maaref, Laboratoire de Physique des Semiconducteurs, Département de Physique, Faculté des Sciences de Monastir, 5000 Monastir, Tunisia; I. Mihalcescu, J.C. Vial, Laboratoire de Spectrométrie Physique, UJF Grenoble I, France |
| I-II/P3 | THE IMPEDANCE OF A GRADED BANDGAP STRUCTURE WITH DOUBLE INJECTION AT HIGH LEVEL OF THE INJECTION, V. Aroutiounian, K. Matevosyan, Yerevan State University, 1A. Manoukian St., Yerevan 375049, Republic of Armenia |
| I-II/P4 | THE INFLUENCE OF DEPOSITION PARAMETERS ON THE STRUCTURE OF NAOCRYSTALLINE SILIOCN, E.I. Terukov, V.Kh. Kudoyarova, V.Yu. Davydov, A.F. Ioffe Physico-Technical Institute, Politechnicheskaya 26, 194021 St. Petersburg, Russia; K.V. Koughia, St. Petersburg Pediatric Academy, Litovskaya 2, 194000 St. Petersburg, Russia, H. Mell, Philipps-University Marburg, 35032 Marburg, Renthof 5, Germany |
| I-II/P5 | THE RESEARCH OF FEATURES CRYSTALLISATION THIN FILMS SYSTEM MoSi2 BY METHOD FOURIER-OPTICS, S.I. Sidorenko, Yu.N. Makogon, A.A. Dziaruk, V.O. Zelenin, National Technical University of Ukraine "KPI", Metal Physics Department, Kiev, Ukraine |
| I-II/P6 | ILGAR - A NOVEL CHEMICAL DEPOSITON TECHNIQUE FOR SULFIDIC THIN FILMS, H.J. Muffler, C.H. Fischer, J. Möller, M. Giersig, M.C. Lux-Steiner, Hahn-Meitner-Institut, Dept. FH, Glienicker Str. 100, 14109 Berlin, Germany |
| I-II/P7 | PULSED SONOELECTROCHEMICAL SYNTHESIS OF CADMIUM SELENIDE NANOPARTICLES, Y. Mastai, R. Polsky*, A. Gedanken* and G. Hodes, Department of Materials and Interfaces, The Weizmann Institute of Science, Rehovot 76100, Israel; *Department of Chemistry, Bar-Ilan University Ramat-Gan 52900, Israel |
| I-II/P8 | ROLE OF THE GAS TEMPERATURE ON POWDER AND VOIDS FORMATION IN FILMS GROWN BY THE PECVD TECHNIQUE, R. Martins, V. Silva, H. Aguas, I. Ferreira and E. Fortunato, CENIMAT, Departamento de Ciencias dos Materias da Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa and CEMOP-UNINOVA, Quinta da Torre, 2825 Campus de Caparica, Portugal |
| I-II/P9 | FORMATION OF SILICON NANO-PARTICLES IN HOT WIRE DEPOSITED SILICON RICH SiN THIN FILMS, Rajeev O. Dusane and Anshu A. Pradhan, Indian Institute of Technology, Bombay, Dpt. of Metallurgical Engg. and Materials Science, Powai, 400076 Mumbai, India |
| I-II/P10 | ROLE OF PLASMA ASSISTING THE HOT WIRE DEPOSITION OF NANOCRYSTALLINE SILICON AND SILICON CARBIDE FILMS, I. Ferreira, C. Ruas, A. Cabrita, E. Fortunato, G. Franco, B. Fernandes and R. Martins, CENIMAT, Departamento de Ciencias dos Materias da Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa and CEMOP-UNINOVA, Quinta da Torre, 2825 Campus de Caparica, Portugal |
| I-II/P11 | OPTIMISATION OF DOPED MICROCRYSTALLINE SILICON FILMS DEPOSITED AT VERY LOW TEMPERATURES BY HOT-WIRE CVD, C. Voz, D. Peiró, J. Bertomeu, D. Soler, M. Fonrodona and J. Andreu, Departament de Física Aplicada i Òptica, Universitat de Barcelona, Av. Diagonal 647, 08028-Barcelona, Spain |
| I-II/P12 | PRODUCTION OF CARBON AND DIAMOND LIKE FILMS BY HOT WIRE TECHNIQUE USING ETHYLENE AND METAHNE GAS SOURCES, UNDER DIFFERENT H AND HE DILUTIONS, I. Ferreira, A. Cabrita, C. Ruas, A. Domingues and R. Martins, CENIMAT, Departamento de Ciencias dos Materias da Faculdade de Ciencias e Tecnologia da Universidade Nova de Lisboa and CEMOP-UNINOVA, Quinta da Torre, 2825 Campus de Caparica, Portugal |
| I-II/P13 | MICROCRYSTALLINE SILICON DEPOSITED BY THE HOT-WIRE CVD TECHNIQUE, J. Guillet, C. Niikura, J.E. Bourée, Laboratoire de Physique des Interfaces et des Couches Minces, Ecole Polytechnique, 91128 Palaiseau Cedex, France; J.P. kleider, C. Longeaud, R. Brüggemann, Laboratoire de Génie Elecrique de Paris, Plateau de Moulon, 91192 Gif sur Yvette Cedex, France |
| I-II/P14 | MOVPE GROWTH OF InxAl1-xAs and InAs QUANTUM DOTS ON InP, V. Soulière, P. Aboughé-Nzé, F. Snogan, H. Dumont, Y. Monteil, J. Bouix, LMI UCB Lyon1, 43 Bd du 11 Novembre 1918, 69622 Villeurbanne Cedex, France |
Poster Session III
| I-III/P1 | NANOCRYSTAL FORMATION BY ION BEAM SYNTHESIS–IN-BEAM TEM OBSERVATION AND MODELING, K.H. Heinig, Forschungszentrum Rossendorf, Postfach 510119, 01314 Dresden, Germany, M.O. Ruault, H. Bernas, CSNSM, bat 108, 92405 Orsay campus, France |
| I-III/P2 | X-RAY CHARACTERIZATION OF GERMANIUM NANOCLUSTERS IN SILICA THIN FILMS, S. Schiestel, George Washington University, Washington DC, USA; S.B. Qadri, R.M. Stroud and C.A. Carosella, Naval Research Laboratory, Washington DC, USA |
| I-III/P3 | PHOTOLUMINESCENCE IN Si ION BEAM MIXED SiO2/Si/SiO2 FILMS ON Si SUBSTRATE AT ELEVATED TEMPERATURES, H.B. Kim*, J.H. Son*, K.H. Chae*, C.N. Whang*, J.W. Jeong**, S. Im** and J.H. Song***, *Atomic-Scale Surface Science Research Center & Dept. of Physics, Yonsei Univ., Seoul 120-749, Korea, **Dept. of Met. Eng., Yonsei Univ., Seoul 120-749, Korea, ***Advanced Analysis Center, Korea Institute Science Technology, Seoul, 130-650, Korea |
| I-III/P4 | A COMPARATIVE STUDY BETWEEN SPUTTERED AND LIQUID PYROLISIS NANOCRYSTALINE SnO2 SAMPLES, A. Cirera, A. Cornet, J.R. Morante, Departament d’Electronica, Universitat de Barcelona, Marti i Franques 1, 08028 Barcelona, Spain; S.M. Olaizola, E. Castano and J. Gracia, Centro de Estudios e Investigaciones Tecnologicas, P. Manuel Lardizabal 15, 20080 San Sebastian, Spain |
| I-III/P5 | ULTRATHIN NANOPARTICLE ZnS AND ZnS:Mn FILMS: SYNTHESIS, MORPHOLOGY, PHOTOPHYSICAL PROPERTIES, N.I. Kovtyukhova, Institute of Surface Chemistry, 31 Pr. Nauky, 252022 Kiev, Ukraine ; E.V. Buzaneva, Kiev T.Shevchenko University, 64 Vladimirskaya Str., 252033 Kiev, Ukraine ; C.C. Waraksa, T.E.Mallouk, The Pennsylvania State University, University Park, PA 16802, USA |
| I-III/P6 | DETERMINATION OF STRUCTURAL AND OPTICAL PROPERTIES OF CdS NANOCRYSTALS EMBEDDED INTO POROUS SOL-GEL ZrO2 THIN FILMS, I. Mikulskas, R.Tomasiunas, Institute of Materials Science and Applied Research, Vilnius University, Sauletekio 10, 2040 Vilnius, Lithuania, E.Bernstain, J.C.Plenet, C.Bovier, J.G.Dumas, Dpt. de Physique des Materiaux, Universite Claude Bernard Lyon I, UMR 5586, 43 Boulevard du 11 Novembre 1918, 69622 Villeurbanne Cedex, France and J.Mugnier, Laboratoire de Physico-Chimie des Materiaux Luminescents, Universite Claude Bernard Lyon I, UMR 5620, 43 Boulevard du 11 Novembre 1918, 69622 Villeurbanne Cedex, France |
| I-III/P7 | PREPARATION OF FINE SPHERICAL ZnCr2O4 PARTICLES BY THE SPRAY PYROLYSIS METHOD, Z.V. Marinkovic, L. Mancic, O. Milosevic, B. Jordovic, Joint Laboratory for Advanced Materials of SASA, Knez-Mihailova 35/IV, 11000 Belgrade, Yugoslavia |
| I-III/P8 | SELF-ASSEMBLY OF NANOSTRUCTURED COMPOSITE ZnO/POLYMER FILMS, N. Kovtyukhova, Institute of Surface Chemistry, 31 Pr. Nauky, 252022 Kiev, Ukraine ; C. Waraksa, The Pennsylvania State University, University Park, PA 16802, USA ; E. Buzaneva, A. Gorchinskiy, Kiev T.Shevchenko University, 64, Vladimirskaya Str., 252033 Kiev, Ukraine |
| I-III/P9 | PREPARATION OF CdZnS SOLID SOLUTION NANOPARTICLES, B.R. Mehta and T. Mohanty, Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India |
| I-III/P10 | Z12 XCITON RESONANT LUMINESCENCE IN CuCl NANOCRYSTALLITES; O. Pagès, H. Erguig, A. Zaoui, A. Katty, A. Lusson and O. Gorochov, Institut de Physique, Groupe de Spectrométrie des Interfaces, Université de Metz, 1 bd Arago, 57078 Metz Cedex, France |
| I-III/P11 | ELECTRICAL PROPERTIES OF PBS NANOPARTICLE FILMS ON MSM AND MIM DETECTORS, F. Otten, E. Kruis, H. Fissan, Process - and Aerosol Measurement Technology, Gerhard-Mercator-University Duisburg, 47048 Duisburg, Germany ; W. Prost, F.J. Tegude, Semiconductor Technology, Gerhard-Mercator-University Duisburg, 47048 Duisburg, Germany and A. Peled, Electrical and Electronics Department, Holon Institute of Technology, Arts & Sciences, 58102 Holon, Israel |
| I-III/P12 | LUMINESCENCE AND NONLINEAR OPTICAL PROPERTIES OF PbS AND PbSe QUANTUM DOTS IN GLAss, A. M. Malyarevich, I. A. Denisov, K. V. Yumashev, V. P. Mikhailov, International Laser Centre, 65 F. Skaryna Ave., Bldg. 17, 220027 Minsk, Belarus, A. A. Mudry, Belarusian State University of Informatics and Radioelectronics, P. Browka str. 6, 220027 Minsk, Belarus, A. A. Lipovskii, St Petersburg State Technical University, St-Petersburg, 195251 Russia |
| I-III/P13 | ANISOTROPY INDUCED OPTICAL TRANSITIONS IN PbSe AND PbS SPHERICAL NANOCRYSTALS, A.D. Andreev, Ioffe Institute, 194021 St. Petersburg, Russia ; A.A. Lipovskii and V.D. Petrikov, State Technical University, 195251 St. Petersburg, Russia |
| I-III/P14 | GROWTH OF CdS NANOCRYSTALS IN Al2O3 FILMS GROWN BY MAGNETRON RF-SPUTTERING, O. Conde, Departamento de Fisica, Universitdade de Lisboa, 1700 Lisboa, Portugal; A.G. Rolo, M.J.M. Gomes and M.I. Vasilevskiy, Departamento de Fisica, Universidad do Minho, 4709 Braga Codex, Portugal; D.J. Barber, Department of Physics, University of Essex, Colchester, Essex CO4 3SQ, UK |
| I-III/P15 | PHOTOLUMINESCENCE OF Er-DOPED ANODIC ALUMINA FILMS WITH EMBEDDED Si NANOPARTICLES, S. K. Lazarouk, A. V. Mudryi, A. A. Leshok, and V. E. Borisenko, Belarusian State University of Informatics and Radioelectronics, P. Browka str. 6, Minsk 220027, Belarus |
| I-III/P16 | NANOCRYSTALLINE CdTe PARTICLES: Wet Chemical PREPARATION, Size–Dependent Optical Properties and Perspectives of Optoelectronic Applications, A.L.Rogach, Physico–Chemical Research Institute, Belarussian State University, Leningradskaya Str. 14, 220050 Minsk, Belarus and Institute of Physical Chemistry, University of Hamburg, Bundesstr. 45, 20146 Hamburg, Germany |
| I-III/P17 | FORMATION OF "POLYELECTROLYTE / LUMINESCENT CdTe NANOCRYSTALS" COMPOSITE SHELLS ON COLLOID SPHERES. A.S.Susha*, F.Caruso, G.B.Sukhorukov, H.Moehwald, Max-Planck-Institute of Colloids and Interfaces, 12489 Berlin, Germany, M.Giersig, Hahn-Meitner-Istitute, 14109 Berlin, Germany, A.L.Rogach*, A.Eychmueller, H.Weller, Institute of Physical Chemistry, University of Hamburg, 20146 Hamburg, Germany, S.V.Kershaw, BT Laboratories, Ipswich, IP5 3RE UK. *permanent address: Physico-Chemical Research Institute, Belarussian State University, 220050 Minsk, Belarus. |
| I-III/P18 | FARADAY ROTATION OF THIN-FILM AND NANOCRYSTALLINE II-VI BASED SEMIMAGNETIC SEMICONDUCTORS, Andriy I.Savchuk, Ihor D. Stolyarchuk, Serhiy V.Medynskiy, Volodymyr I. Fediv, Dept.of Phys.Electronics, University of Chernivtsi, 274012, Chernivtsi, Ukraine, Alessio Perrone, Dept.of Physics, University of Lecce, National Institute of Matter Physics, 73100 Lecce, Italy and Petr I. Nikitin, General Physics Institute, 117942, Moscow, Russia |
| I-III/P19 | RADIATION RESISTANT MICROCRYSTALS AND THIN FILMS OF III-V SEMICONDUCTORS, I.A. Bolshakova and T.A. Moskovets, Magnetic Sensor Laboratory, 1 Kotliarevsky St., 290013 Lviv, Ukraine; S.I. Krukovsky, Scientific-Industrial Enterprise "Carat", 202 Stryjiska Street, 290031 Lviv, Ukraine and D.M. Zayachuk, Semiconductor Electronics Dept. State University, "Lviv Polytechnics", 12 Bandera St., 290646 Lviv, Ukraine |
| I-III/P20 | TIGHT-BINDING CALCULATION OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR QUANTUM DOTS, J. Pérez-Conde, Departamento de Física, Universidad Pública de Navarra, E-31006, Pamplona, Spain and A. K. Bhattacharjee, Laboratoire de Physique des Solides, URA au CNRS, Université Paris-Sud, 91405 Orsay, France |
| I-III/P21 | SIMMETRY AND PASSIVATION DEPENDENCE OF THE OPTICAL PROPERTIES OF NANOCRYSTALLINE SILICON STRUCTURE Elena Degoli, Stefano Ossicini, Davide Barbato, Emanuele Pettenati, Istituto Nazionale per la Fisica della Materia (INFM) and Dipartimento di Fisica, Università di Modena e Reggio Emilia, via Campi 213/A, I-41100 Italy |
| I-III/P22 | CONDUCTANCE IN MODULATED NANOWIRES, V. Vargiamidis, G. Petsos, Department of Physics, Aristotle University, 54006 Thessaloniki, Greece |
| I-III/P23 | THE ARBITRARY ELECTRON LEVELS IN A CYLINDRICAL WIRE IN A MAGNETIC FIELD Anatoly Prudius College of Finance and Law, Tolstoy 2, Chernivtsi, 274000, Ukraine |
| I-III/P24 | DYNAMICS OF CARRIER RECOMBINATION IN SILICON QUANTUM WIRES SURROUNDED BY DIELECTRIC MEDIUM, V.Yu. Timoshenko*,**, M.G. Lisachenko*, P.K. Kashkarov*, E.A. Konstantinova*, A.I. Efimova*, B.V. Kamenev*, A.V. Pavlikov* *Moscow State Lomonosov University, Faculty of Physics, 119899 Moscow, Russia; **Technische Universität München, Physik Department E16, 85747 Garching, Germany |
| I-III/P25 | AUGER RECOMBINATION IN QUANTUM WIRES, Evgeniy B. Dogonkine, Vitali N. Golovach, Anatoli S. Polkovnikov, Georgy G. Zegrya, Ioffe Physico-Technical Institute, Ul. Politechnicheskaya 26, 194021 St. Petersburg, Russia |
| I-III/P26 | MANYPHONON PROCESSES INFLUENCE ON THE ELECTRON SPECTRUM RENORMALIZATION IN QUANTUM WIRE. M.Tkach, V.Zharkoy, O.Makhanets, O.Val, Chernivtsi State University, Kotsiubinsky St. 2, Chernivtsi 274012, Ukraine |
| I-III/P27 | ENERGY REMOVAL PECULIARITIES IN THE SYSTEM OF PHOTOEXCITED Si NANOPARTICLES IN SiO2, I.V. Blonskiy, M.S. Brodyn, B.M. Lev, V.O. Salnikov, P.M. Tomchuk, A.G. Filin, E.V. Yeliseyev, Institute of Physics, Pr. Nauky 46, 252650 Kyiv, Ukraine |
| I-III/P28 | QUASISTATIONARY STATES LIFE-TIME IN COMPLICATED SPHERICAL QUANTUM DOTS, M.Tkach, V.Holovatsky, O.Voitsekhivska, M.Mikhalyova, Chernivtsi State University, Kotsiubinsky St.,2, Chernivtsi, Ukraine, 274012 |
| I-III/P29 | THE ROLE OF RELAXATION MECHANISMS ON RADIATIVE AND AUGER RECOMBINATION IN SEMICONDUCTOR QUANTUM WELLS, A.S. Polkovnikov, E.B. Dogonkine, V.N. Golovach, G.G. Zegrya, Ioffe Physico-Technical Institute, Ul. Politechnicheskaya 26, 194021 St. Petersburg, Russia |
| I-III/P30 | CHEMICAL DESIGNING OF THE NANOCRYSTALLINE OXIDES, E.P. Smirnov, State Institute of Technology, Moskovskii pr. 26, 198013 St. Petersburg, Russia |
| I-III/P31 | VERTICAL SELF ORGANIZATION OF Ge/Si QUANTUM DOTS IN MULTILAYER STRUCTURES, V. Yam, V. Le Thanh, P. Boucaud, F. Fortuna and D. Bouchier, Institut d’Electronique Fondamentale, UMR-CNRS 8622, Bat 220, Université Paris Sud, 91405 Orsay Cedex, France |
| I-III/P32 | FORMATION OF PbS AND AgI NANOPARTICLES IN POLYAMIC ACID FILMS, Y.N. Savin, M.V. Dobrotvorskaja, O.N. Bescrovnaja, Institute for Single Crystals, Lenin Ave., 310001 Kharkov, Ukraine |
| I-III/P33 | THEORETICAL ANALYSIS OF STRAIN DISTRIBUTION, CARRIER SPECTRUM AND GAIN IN GaN-based HEXAGONAL QDs, A.D. Andreev, A.F. Ioffe Institute, 194021 St.-Petersburg Russia and E.P. O’Reilly, University of Surrey, Guildford GU2 5XH, UK |
| I-III/P35 | LUMINESCENCE FROM Si NANOCRYSTALS PRODUCED BY PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION, F. Iacona, G. FranzÚ and C. Spinella, CNR-IMETEM, Stradale Primosole 50, 95121 Catania, Italy ; S. Cammarata and S.U. Campisano, INFM and Dipartimento di Fisica dell'Universita, Corso Italia 57, 95127 Catania, Italy. |
| I-III/P36 | SILICON NANOCRYSTALS IN SiO2, G. Amato, D. Midellino, Istituto Elettrotecnico Nazionale Galileo Ferraris, strada delle Cacce 91, 10134 Torino, Italy, A. Parisini, CNR-LAMEL, via P. Gobetti 101, 40129 Bologna, Italy |
| I-III/P37 | FABRICATION OF THE NANOSTRUCTURES BASED ON SILICON NANOPILLARS BY REACTIVE ION ETCHING USING SELF-ORGANIZED GOLD MASK, V. Ovchinnikov, A. Malinin nad S. Novikov, Electron Physics Laboratory, Department of Electrical and Communication Engineering, Helsinki University of Technology, P.O.Box 3000, 02015 Hut, Finland |
Friday June 4, 1999 - Morning
Vendredi 4 juin 1999, Matin
| I-IV.1 | 8:30-9:00 | Invited | CORRELATION BETWEEN OPTICAL AND STRUCTURAL PROPERTIES OF b -FeSi2 PRECIPITATES IN Si, S. Coffa, R.C. Spinella, CNR-IMETEM, Catania, Italy, M.G. Grimaldi, INFM and Department of Physics, Catania, Italy |
| I-IV.2 | 9:00-9:15 | GERMANIUM NANOCLUSTERS IN SILICA THIN FILMS, M. Stoiber, The University of Leoben, Austria; S. Schiestel, C.A. Carosella and R.M. Stroud, Naval Research Laboratory, Washington DC, USA | |
| I-IV.3 | 9:15-9:30 | VIOLET AND ORANGE LUMINESCENCE EMITTED IN Ge-IMPLANTED SiO2 LAYERS, W.S. Lee, S. Im, J.Y. Jeong, H.B. Kim*, K.H. Chae*, C.N. Whang* and J.H. Song**; Department of Metallurgical Engineering, Yonsei University, Seoul 120-749, Korea; *Department of Physics & Atomic-scale Surface Science Research Center, Yonsei University, Seoul 120-749, Korea; **Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 130-650, Korea | |
| I-IV.4 | 9:30-9:45 | ELECTROLUMINESCENCE AND ELECTRICAL PROPERTIES OF NANO - CRYSTALLINE SILICON, S. Tamir, Israel Institute of Metals, Haifa, Israel and S. Berger, Faculty of Materials Engineering, Technion, Haifa, Israel | |
| I-IV.5 | 09:45-10:00 | STRUCTURE AND OPTICAL PROPERTIES OF AMORPHOUS SiOx THIN FILMS PREPARED BY CO-EVAPORATION OF Si AND SiO, H. Rinnert, M. Vergnat, G. Marchal, Laboratoire de Physique des Matériaux, (U.M.R. au C.N.R.S. No. 7556), Université Henri Poincaré Nancy 1, B.P. 239, 54506 Vandœuvre-lès-Nancy Cedex, France and A. Burneau Laboratoire de Chimie Physique pour l’Environnement, (U.M.R. au C.N.R.S. No. 7564), Université Henri Poincaré Nancy 1, 405, rue de Vandœuvre, 54506 Villers-lès-Nancy Cedex, France | |
| 10:00-10:30 | BREAK | ||
| I-IV.6 | 10:30-10:45 | NANOLITHOGRAPHY OF SILICON USING AN ATOMIC FORCE MICROSCOPE AND PULSED VOLTAGES, B.Legrand and D.Stievenard, IEMN, UMR9929 (CNRS), Département ISEN, 41 Bd Vauban, 59046 Lille Cedex, France | |
| I-IV.7 | 10:45-11:00 | SYNTHESIS OF WS2 NANOTUBES AND THEIR USING AS TIPS IN SCANNING PROBE MICROSCOPY, A. Rothschild, M. Homyonfer, M. Rapoport, S.R. Cohen and R. Tenne, Weizmann Institute of Sciences, Rehovot 76100, Israel | |
| I-IV.8 | 11:00-11:15 | THERMAL ACTIVATION OF THE ELECTRONIC TRANSPORT IN POROUS TITANIUM DIOXIDES, Th. Dittrich, J. Weidmann*, V.Yu. Timoshenko, F. Koch, Technische Universität München, 85748 Garching, Germany; E.A. Konstantinova, M.G. Lisachenko, Moscow State Lomonosov University, Faculty of Physics, 119899 Moscow, Russia; E. Lebedev, A. F. Ioffe Physico Technical Institute, 194021 St. Petersburg, Russia (* on leave) | |
| I-IV.9 | 11:15-11:30 | THE CONTACT GEOMETRY IN A 2D (c-si:H P-I-N IMAGER, J. Martins, F. Sousa, M. Fernandes, P. Louro, A. MaÁarico and M. Vieira, Electronics and Communications Department, ISEL, R. Conselheiro EmÌdio Navarro, P 1949-014 Lisboa, Portugal. | |
| I-IV.10 | 11:30-11:45 | DEFECTS AND PHONON ASSISTED OPTICAL TRANSITIONS IN Si, C. Delerue, G. Allan and M. Lannoo, Institut d'Electronique et de Microélectronique du Nord, Département ISEN, BP 69, 59652 Villeneuve d'Ascq Cedex, France | |
| I-IV.11 | 11:45-12:00 | LIGHT-CONTROLLED GROWTH OF CdSe NANOCRYSTALLINE FILMS PREPARED BY CHEMICAL DEPOSITION, P. Nemec, D. Mikes, Faculty of Mathematics and Physics, Charles University, Prague, Czech Republic, J. Rohovec, Faculty of Science, Charles University, Prague, Czech Republic, E. Uhlirova, F. Trojanek, and P. Maly, Faculty of Mathematics and Physics, Charles University, Prague, Czech Republic | |
| 12:00-14:00 | LUNCH |
Friday June 4, 1999 - Afternoon
Vendredi 4 juin 1999, Après-midi
Poster Session IV
14 :00-…
| I-IV/P1 | DOSE DEPENDENCE OF PHOTOLUMINESCENCE IN SI-IMPLANTED SiO2 LAYERS, H.B. Kim*, T.G. Kim*, K.H. Chae*, C.N. Whang*, W.S. Lee**, S. Im** and J.H. Song***, *Atomic-Scale Surface Science Research Center & Dept. of Physics, Yonsei Univ., Seoul 120-749, Korea ; **Dept. of Met. Eng., Yonsei Univ., Seoul 120-749, Korea ; ***Advanced Analysis Center, Korea Institute Science Technology, Seoul 130-650, Korea |
| I-IV/P2 | STRUCTURE AND LUMINESCENCE PROPERTIES OF INDIVIDUAL AND MULTI LAYER THIN-FILM SYSTEMS BASED ON OXIDE PHOSPHORS. V.Bondar, Lviv State University, Department of Physics, 50 Dragomanov Str., 290005, Lviv, Ukraine. |
| I-IV/P3 | HIGH PRECISION X-RAY DIFFRACTION MEASUREMENTS OF STRESSES IN NONLINEAR KDP CRYSTALS, Valentin F.Tkachenko, Vitaliy I.Salo ST Concern "Institute for Single Crystals" Department of Optical and Constructional Crystals, Lenin Ave. 60, 310001 Kharkov, Ukraine |
| I-IV/P4 | ELECTRICAL PROPERTIES OF MICROSTRUCTURAL THIN FILM OXIDE PHOSPHORS. V.Bondar, Lviv State University, Department of Physics, 50 Dragomanov Str., 290005, Lviv, Ukraine. |
| I-IV/P5 | MODELING NANOVOIDS FORMATION IN SILICON INDUCED BY THE HYDOGEN ION IMPLANTATION, A.A. Efremov, A.V. Sarikov, Institute of Semiconductor Physics, 45 Nauki avenue, Kiev 252028, Ukraine |
| I-IV/P6 | OPTICAL CHARACTERIZATION OF InAs/GaAs SUBMONOLAYERS AND MONOLAYERS, M. Hjiri, F. Hassen, H. Maaref, Laboratoire de Physique des Semiconducteurs, Département de Physique, Faculté des Sciences de Monastir, 5000 Monastir, Tunisia |
| I-IV/P7 | ELECTROLUMINESCENCE OF MULTILAYER GRADED-BAND-GAP SEMICONDUCTOR STRUCTURES, B. S. Sokolovskii, V. K. Pysarevskii, Institute of Applied Physics of Ivan Franko State University, 290044 Lviv, Ukraine |
| I-IV/P8 | OPTICAL AND TRANSPORT PROPERTIES OF Si-p BY PHOTOACOUSTIC MEASUREMENTS A. Barbu and G. Cristea*, Institute of Isotopic and Molecular Technology, P.O. Box 700, 3400 Cluj-Napoca 5, Romania; *University Babes-Bolyai 3400 Cluj-Napoca, Romania. |
| I-IV/P9 | Sn - DOPED MICROCRYSTALLINE SILICON, V.A. Krasnov, Inst. of Semicond. Phys., Ukrainian Acad. Sci., Kherson Depart., PO Box 76, Kherson, Ukraine |
| I-IV/P10 | STRUCTURAL AND ELECTRICAL PROPERTIES OF POLYCRY-STALLINE Si THIN FILMS PREPARED AT LOWTEMPERATURES, M. Zhu, X. Guo, Y. Cao, J. Zong ,Graduate School, University of Science and Technology of China, Beijing 100038 China and M. He, Electron Microscopy Laboratory, Chinese Academy Science Beijing 100084, China |
| I-IV/P11 | DETERMINATION OF THE OPTICAL CONSTANTS AND THICKNESS FOR a-Si:H – THIN FILM, Eugenia Carbunescu, Physics Department, University "Politehnica", Bucharest, Splaiul Independentei 313, PO Box 16, R-77206, Bucharest, Romania |
| I-IV/P12 | NUCLEATION AND GROWTH OF LOW-TEMPERATURE FINE-CRYSTALLINE SILICON ON DIFFERENT SUBSTRATES: A SCANNING PROBE MICROSCOPY STUDY, Ch. Ross, J. Herion, R. Carius and H. Wagner, Institute of Thin Film and Ion Technology, Research Centre Jülich GmbH, 52425 Jülich, Germany |
| I-IV/P13 | ELECTRICAL TRANSPORT IN POROUS TiO2 FILMS, R. Könenkamp, Hahn-Meitner Institut Berlin, Glienicker Str. 100, 14109 Berlin, Germany |
| I-IV/P14 | STRUCTURAL AND OPTICAL CHARACTERIZATION OF SELF-ASSEMBLED GaInAs ISLANDS GROWN ON AlInAs/InP (113) SURFACES, M.B. Derbali, IPEI Monastir, 5000 Monastir Tunisia, J. Meddeb, IPEI Sousse Tunisia, P. Abraham, Laboratoire Multimatériaux et Interfaces Université Lyon I, France |
| I-IV/P15 | MICROCRYSTALLINE SILICON THIN FILM TRANSISTORS OBTAINED BY HOT WIRE CVD, J. Puigdollers, A. Orpella, R. Alcubilla, Dep. Eng. Electrònica (UPC), 08034-Barcelona, Spain, D. Dosev, J. Pallarés, Dep. Eng. Electrònica (URV), 43006-Tarragona, Spain and D. Peiro, C. Voz, J. Bertomeu, J. Andreu, Dep. Física Aplicada (UB), 08028-Barcelona, Spain. |
| I-IV/P16 | STRUCTURAL INVESTIGATION OF NANOCRYSTALLINE SILICON CARBIDE LAYERS OBTAINED BY REACTIVE MAGNETRON SPUTTERING, S. Kerdiles, R. Rizk, F. Gourbilleau, LERMAT-ISMRA, UPRESA 6004, 6 bd Maréchal Juin, 14050 Caen Cedex, France; A. Perez-Rodriguez, B. Garrido, O. Gonzalez-Varona, J.R. Morante, Departament d’Electronica, Universitat de Barcelona, Avda Diagonal 645-647, Barcelona, Spain |
| I-IV/P17 | PROPERTIES OF HgCdTe FILMS OBTAINED BY PLD ON A SAPHIRE, I. Wirt, Section of Experimental Physics, Pedagogical University, Franco 24, 293-720 Drogobich, Ukraine; M. Bester, M. Kuzma, Institute of Physics, Higher Pedagogical School, Rejtana 16a, 35-310 Rzeszow, Poland, I. Rudyj, M. Fruginskii, I. Kurilo, State University "Lviv Politechnic", Bandera 12, 29064 Lviv, Ukraine |
| I-IV/P18 | STRUCTURE OF MICROCRYSTALLINE SILICON FILMS DEPOSITED AT VERY LOW TEMPERATURES BY HOT-WIRE CVD, D. Peiro, J. Bertomeu, C. Voz, M. Fonrodona, D. Soler and J. Andreu, Departament de Fisica Aplicada i Optica, Universitat de Barcelona, Av. Diagonal 647, 08028-Barcelona, Spain |
| I-IV/P19 | ORGANIC RECORDING MEDIA FOR THREE-DIMENSIONAL OPTICAL MEMORY: DEVELOPMENTS AND PERSPECTIVES, Valery A. Barachevsky, 7a, Novatorov Street, 117421 Moscow, Russia |
| I-IV/P20 | THIN SILICON LAYERS ON Al2O3 FOR SOLAR CELLS, M.E. Nell, A. Braun, B. von Ehrenwall, C. Schmidt, H.-G. Wagemann, Technische Universität Berlin, IMF, Sekr. J10, Jebensstrasse 1, 10623 Berlin, Germany, L. Elstner, Hahn-Meitner-Institut Berlin GmbH, Abteilung Photovoltaik, Rudower Chaussee 5, 12489 Berlin, Germany |
| I-IV/P21 | FIBER OPTIC IMMUNE SENSOR BASED ON THE ENHANCED CHEMICAL LUMINESCENCE FOR THE CONTROL OF ENVIRONMENTAL CONTAMINATION BY BIOLOGICAL SUBSTANCES, N.F. Starodub, V.M. Starodub, V.P. Artjuch*, A.V.Palladin’s Institute of Biochemistry of Ukrainian National Academy of Sciences, Kyiv, Ukraine, 9 Leontovicha Str., 252030 Kyiv, Ukraine, *Ukrainian Scientific Centre of Hygiene of Ministry of Public Health, Kyiv, Ukraine |
| I-IV/P22 | PROPERTY DRIVEN NANO-COLLOIDAL DESIGN OF PHOTOELECTRONIC II-VI-SEMICONDUCTOR LAYERS, L. Spahnel, M. Kohls, J. Leeb, M. Hilgendorff, V. Ptatschek, G. Müller, Lehrstuhl für Silicatchemie, Universität Würzburg, Röntgenring 10, 97070 Würzburg, Germany |
| I-IV/P23 | RAMAN CHARACTERIZATION OF Si/CaF2 MULTIQUANTUM WELLS, D. Papadimitriou, National Technical University of Athens, Department of Physics, Greece, 15780 Athens, A.G. Nassiopoulou, NCSR"Demokritos", P.O.Box 60228, 153 10 Aghia Paraskevi, Athens, Greece, F. Bassani and F. Arnaud d’Avitaya, CRMC2/CNRS, Campus de Luminy, Case 913, 13288 Marseille cedex 9, France. |
| I-IV/P24 | CuS AND CuInS2-DOPED SOL-GEL GLASSES: NONLINEAR OPTICAL PROPERTIES, A. M. Malyarevich, N. N. Posnov, V. Yumashev, V. P. Mikhailov, International Laser Centre, 65 F. Skaryna Ave., Bldg. 17, 220027 Minsk, Belarus, V. S. Gurin, Physico-Chemical Research Institute, 4, F. Skaryna Ave., 220080 Minsk, Belarus, A. A. Alexeenko, V. B. Prokopenko, Advanced Materials Research Laboratory, Gomel State Technical University, 246699 Gomel, Belarus |
| I-IV/P25 | NEW OPTICAL PROPERTIES OF Cu2Se-DOPED SOL-GEL GLASSES DUE TO SPECIAL TREATMENT, K. V. Yumashev, I. A. Denisov, N. N. Posnov, A. M. Malyarevich, V. P. Mikhailov, International Laser Centre, 65 F. Skaryna Ave., Bldg. 17, 220027 Minsk, Belarus, V. S. Gurin, Physico-Chemical Research Institute, 4, F. Skaryna Ave., 220080 Minsk, Belarus, V. B. Prokopenko, Advanced Materials Research Laboratory, Gomel State Technical University, 246699 Gomel, Belarus |
| I-IV/P26 | MICROCRYSTALLINE Ge FILM STRUCTURE AND Ge-BASED MINIATURE TEMPERATURE SENSOR PROPERTIES, V.F. Mitin, N.I. Klyui, V.A. Yuhimchuk, M.Ya. Valakh, V.P. Kladko, A.B. Romanyuk, Institute of Semiconductor Physics, 45 pr. Nauki, 252028 Kiev, Ukraine |
| I-IV/P27 | EFFECT OF IN SITU ULTRASOUND TREATMENT ON THE STRUCTURE OF ION-BEAM MODIFIED LAYER IN SILICON: A RAMAN STUDY, B.N. Romanyuk, V.P. Melnik, V.A. Yuhimchuk, N.I. Klyui, M.Ya. Valakh, Y. Olikh, Institute of Semiconductor Physics, 45 pr. Nauki, 252028 Kiev, Ukraine; D. Kruger, Institut fur Halbleiterphysik, Walter-Korsing-Strasse 2, 15230 Frankfurt (Oder), Germany. |
| I-IV/P28 | EPR STUDY OF DEFECTS IN RTCVD MICRO-CRYSTALLINE SILICON, D. Grozdanic, B. Rakvin, B. Pivac, A. Slaoui* and R. Monna*, R. Boškovic Institute, P.O.Box 1016, 10000 Zagreb, Croatia, *CNRS, Laboratoire PHASE, (UPR 292), 23 Rue du Loess, B.P. 20, 67037 Strasbourg Cedex 2, France |
| I-IV/P29 | MECHANISM OF LARGE OSCILLATIONS OF ANODIC POTENTIAL DURING ANODIZATION OF SILICON IN H3PO4/HF SOLUTIONS, V. Parkhutik and E. Matveeva, Technical University of Valencia, CamÌ de Vera s/n, 46071 Valencia, Spain; R. Perez, J. Alamo, D. Beltran and A. Cantarero, University of Valencia, Burjassot, 46007 Valencia, Spain; Yu. Makushok and V. Sokol , State University of Electronics and Informatics, Minsk 220023 Belarus |
| I-IV/P30 | THE ROLE OF HYDROGEN IN THE FORMATION OF MICROCRYSTALLINE SILICON (µc-Si:H), A. Fontcuberta, P. Roca i Cabarrocas, LPICM (UMR 7647 CNRS), Ecole Polytechnique, 91128 Palaiseau, France and J. Bartomeu, Departament de Fisica Aplicada i Electronica, Universitat de Barcelona, Av. Diagonal 647, 08028 Barcelona, Spain |
| I-IV/P31 | ANALYSE OF AMORPHOUS SILICON THROUGH NANOCRYSTALLITE AND NANOVOID IN NUMERICAL SIMULATION, N. Barriquand, G. Landa, M. Djafari Rouhani, L.P.S.T, Université P. Sabatier, 118 Route de Narbonne, 31062 Toulouse, France, ESA5477 associée au CNRS |
| I-IV/P32 | OPTICAL PROPERTIES OF Si+-ION IMPLANTED SOL-GEL DERIVED SiO2 FILMS, J. Dian, J. Valenta, Charles University, Ke Karlovu 3, 121 16 Prague, Czech Republic, K. Luterová, I. Pelant, M. Nikl, Institute of Physics ASCR, Cukrovarnická 10, 162 53 Prague, D. Muller, J.-J. Grob, PHASE, 23 rue du Loess, 67037 Strasbourg, France, J.-L. Rehspringer, B. Hönerlage, IPCMS, 23 rue du Loess, 67037 Strasbourg |
| I-IV/P33 | ANNEALING EFFECTS ON LIGHT EMISSION FROM Ge-IMPLANTED SiO2 FILMS, G.A.Kachurin, I.E.Tyschenko and V.A.Volodin, Inst. Semicond. Physics, Novosibirsk, Russia, L.Rebohle and W.Skorupa, Research Center Rossendorf, Dresden, Germany, H.Froeb and K.Leo, Tech. Univer. of Dresden, Dresden, Germany |
| I-IV/P34 | COMPUTER MODELING OF Si PRECIPITATION IN Si ION IMPLANTED SiO2 LAYERS, A.F.Leier, L.N.Safronov and G.A.Kachurin, Institute of Semiconductor Physics, Novosibirsk, Russia |
| I-IV/P35 | EFFECT OF UV TREATMENT ON PHOTOLUMINESCENCE OF SiO2/Si and Si3N4/SiO2/Si FILMS, A. Iller, Institute of Vacuum Technology, Duga 44/50, 00-241 Warszawa, Poland; A. Misiuk, J. Jun, A. Panas, Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland |
| I-IV/P36 | ULTRAFAST OPTICAL BLEACHING IN NEW Cu-Fe-S NANOCOMPOSITES, A. M. Malyarevich, N. N. Posnov, I. A. Denisov, K. V. Yumashev, V. P. Mikhailov, International Laser Centre, 65 F. Skaryna Ave., Bldg. 17, 220027 Minsk, Belarus, V. S. Gurin, Physico-Chemical Research Institute, 4, F. Skaryna Ave., 220080 Minsk, Belarus |
| I-IV/P37 | GIANT ENHANCEMENT OF TWO-PHONON ABSORPTION IN COPPER-DOPED-AMORPHOUS CARBON, V.I.Ivanov-Omskii and S.G.Yastrebov, Ioffe Phys.-Tech. Inst., St.Petersburg, 194021, Russia |
| I-IV/P38 | THERMOSTABLE OXIDE COATINGS FOR IR OPTICAL ELEMENTS BASED ON CRYSTALLINE ZINC SELENIDE., Yuriy A. Zagoruiko, Olga A. Fedorenko, Nazar O. Kovalenko, ST Concern ìInstitute for Single Crystalsî Department of Optical and Constructional Crystals, Lenin Ave. 60, 310001 Kharkov, Ukraine |
| I-IV/P39 | POLARIZATION PROPERTIES OF CONDUCTOR SCANDIUM CLUSTERS, F. Torrens, J. Sanchez-Marin and I. Nebot-Gil, Universitat de Valencia, Dr. Moliner 50, 46100 Burjassot (Valencia), Spain |
| I-IV/P40 | ANOMALOUS KINETIC PROPERTIES OF SUBMICRON BISMUTH WIRES UNDER STRONG UNIAXIAL DEFORMATION, E. Condrea, A. Grozav, N. Leporda, and F. Muntyanu, Institute of Applied Physics, Chisinau MD-2028, Republic of Moldova |
| I-IV/P41 | SEMICONDUCTOR GROWTH ON POROUS SUBSTRATES, C. Rost, K. Ernst, M.C. Lux-Steiner and R. Könenkamp, Hahn-Meitner Institut Berlin, Glienicker Str. 100, 14109 Berlin, Germany |
| I-IV/P42 | INVESTIGATION OF THE ELECTRON FIELD EMISSION FROM NANOCRYSTALLINE SILICON STRUCTURES, A.A. Evtukh, E.B. Kaganovich, V.G. Litovchenko, Y.M. Litvin, E.G. Manoilov, S.V. Svechnikov, Institute of Semiconductor Physics , 45 Prospekt Nauki, Kiev 252650, Ukraine. |
| I-IV/P42 | OPTIMIZATION AND COMPARISON OF PHOTOVOLTAIC EFFICIENCY IN POLY-SI(N)/C-SI(P)/C-SI (P+) AND POLY-SI(N+)POLY-SI(N)/C-SI(P)/C-SI(P+) STRUCTURES : A COMPUTER SIMULATION ANALYSIS, B. Zebentout, H. Sehil, H. Dib, H. Boudiaf, Y. Bourezig, Z. Benamara, A. Joti, Laboratoire de Microelectronique Appliquée, Université Djillali Liabes, Sidi Bel Abbes 22000, Algerie |
| I-IV/P43 | PHOTOLUMINESCENCE OF COMPOSITE CERAMICS DERIVED FROM POLYSILOXANES AND POLYCARBOSILANES BY ION IRRADIATION, J.C. Pivin, CSNSM, IN2P3-CNRS, Batiment 108, 91405 Orsay Campus, France and M. Sendova-Vassileva, Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria |
| I-IV/P44 | ANISOTROPY OF RAMAN SCATTERING INTENSITY IN A SYSTEM OF (110)-ORIENTED SILICON NANOCRYSTALS IN a-Si FILM. M.D.Efremov, V.A.Volodin, L.I.Fedina, S.A.Kochubei, Institute of Semiconductor Physics SB RAS, pr.Lavrentjeva 13, Novosibirsk 630090, Russia ; V.V.Bolotov, Institute of Sensor Microelectronics SB RAS, pr.Mira 55a, Omsk 644077, Russia. |
| I-IV/P45 | STRUCTURE OF ULTRADISPERSE DIAMOND NANOCLUSTERS, V.I. Siklitsky, A.E. Aleksenskii, M.V. Baidakova and A.Ya. Vul’, Ioffe Physical-Technical Inst., St.Petersburg 194021, Russia |
End of Symposium I
