SYMPOSIUM C - Group III Nitrides

This symposium will bring together people of the growth, characterization and devices physics. It will focus on advances of GaN related materials in aspects such as substrates, epitaxial growth, material processing, characterizations, modeling, in straight forward relation to the realization of laser devices, light emitting diodes, detectors and transistors. Some of the challenges facing the researchers in this area are, the quest for low-defect density growth, low resistive p-doping processes and modern materials characterizations. Special emphasis will be dedicated to investigations that permit to understand the defects which affect the electrical and optical properties of the nitrides. Other issues like the growth of alloys for the infrared, or growth of quantum dots will be also welcome. Physics of quantum wells, modulation-doped heterostructures will be extensively addressed too.

International Programme committee: H. Amano (Nagoya Univ., Japan), B. Daudin (CEA Grenoble, France), M. Colocci (Florence Univ., Italy), J.Y. Duboz (Thomson CSF, France), R. Dupuis (Austin Univ., USA), T. Kuech, (Univ. of Wisconsin, USA), F. Hasegawa (Tukuba Univ., Japan), D. Hommel (Bremen Univ., Germany), N. Johnson (Xerox Palo Alto, USA), K. Kishino (Sophia Univ., Japan), A. Krost (Magdeburg Univ., Germany), P. Lefebvre (GES-CNRS, France), M. Leroux (CRHEA-CNRS, France), S. Lester (Hewlett Packard labs, USA), H. Sakai (Tokushima Univ., Japan), B. Monemar (Linkoping Univ., Sweden), H. Morkoç (Virginia Commonwealth Univ., USA), M. Stutzmann (TUM, Germany), T. Suski (Unipress Warsaw, Poland), C. Thomsen (Berlin Uni., Germany)

Preliminay list of invited speakers: E.Calleja (Madrid Univ., Spain), J.Christen (Magdeburg Univ., Germany), G.Feuillet (CEA Grenoble, France), I.Grzegory (Unipress Warsaw, Poland), M.Kamp (Ulm Univ., Germany), Y.Kawakami (Kyoto Univ., Japan), N.Maeda (NTT, Japan), B.K. Meyer (Giessen Univ., Germany), J. Massies (CRHEA-CNRS, France), U. Misrah (UCSB, USA), S. Nakamura (Nichia Chemical, Japan), S.J. Pearton (Florida Univ., USA), P. Ruterana (LERMAT-CNRS Caen, France), H. Sotah (Waseda Univ.), T. Taliercio (Montpellier Univ., France), S. Tanaka (Hokkaido Univ., Japan)

Symposium Organizers:

Gou Chung CHI
National Central University
Optical Science Center
Chung-Li, Taiwan 32054
Tel: +886 3 4257681
Fax: +886 3 4258816
gcchi@halley.phy.ncu.edu.tw
Steve P. DEN BAARS
Materials and ECE Dept
University of California
Santa Barbara, CA 93106
USA
Tel: +1 805 893 8511
Fax: +1 805 893 8983
denbaars@engineering.ucsb.edu
Bernard GIL
Université de Montpellier II
GES - Case courrier 074
34095 Montpellier Cedex 5
France
Tel: +33 4 67 14 39 24
Fax: +33 4 67 14 37 60
gil@ges.univ-montp2.fr
Kazumasa HIRAMATSU
Mie University
Dept of Electrical and Electronic Engineering
1515 Kamihama, Tsu,
Mie 514 8507
Japan
Tel: +81 59 231 9694
Fax: +81 59 231 9694
hiramatu@elec.mie-u.ac.jp
Axel HOFFMANN
Technical University Berlin
Hardenbertgstrasse 36
10623 Berlin
Germany
Tel: +49 30 314 22001
Fax: +49 30 314 22064
hoffmann@physik.tu-berlin.de
Kevin P. O'DONNELL
Department of Physics
University of Strathclyde
Glasgow G4 0NG
Scotland
U.K.
Tel: +44 141 548 3365
Fax: +44 141 552 2891
k.p.odonnell@strath.ac.uk