Article : [SHEET449]

Titre : P.E. NICOLLIAN, W.R. HUNTER, J.C. HU, Experimental Evidence for Voltage Driven Break-down Models in Ultrathin Gate Oxides, IRPS'2000.

Cité dans : [DATA126] ESREF'2000, 11th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Dresden, Germany, 2-6 octobre 2000.
Cité dans : [DATA183] IRPS'2000, 2000 IEEE International Reliability Physics Symposium, San Jose, California.
Cité dans :[SHEET450]

Stockage : Thierry LEQUEU

Lien : ESREF/2000/programm.pdf - page 9.
Best paper of Int. Reliability Physics Symposium (IRPS) 2000, USA:
Experimental Evidence for Voltage Driven Break-down Models in Ultrathin Gate Oxides
P.E. Nicollian et al., Texas Instruments, Dallas, USA

Lien : IRPS/IRPS2000/AP2K.pdf - 927 Ko, 42 pages, Advance program - page 17, §1.1
1.1 EXPERIMENTAL EVIDENCE FOR VOLTAGE DRIVEN BREAK-DOWN MODELS IN ULTRATHIN GATE OXIDES
P.E. Nicollian, W.R. Hunter, and J.C. Hu, Texas Instruments, Inc., Dallas, TX

Lien : DATA183.HTM
NICOLLIAN, P.E.; HUNTER, W.R.; HU, J.C.
EXPERIMENTAL EVIDENCE FOR VOLTAGE DRIVEN BREAKDOWN MODELS IN ULTRATHIN GATE OXIDES
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL 2000 IEEE INTERNATIONAL ( 2000 )

Abstract :
We have performed an experiment proving that the widely accepted E-field
TDDB model is a physically incorrect description of breakdown in ultra-thin
gate oxides. Although interface traps are the dominant SILC mechanism
below 5V stress, we confirm that breakdown remains limited by bulk trap
generation and is voltage-driven.

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