Fiche : [DATA183]

Titre : IRPS'2000, 2000 IEEE International Reliability Physics Symposium, San Jose, California.

Cité dans : [CONF024] IRPS, International Reliability Physics Symposium, août 2004.

From R&D Electronic Library

2000 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM
PROCEEDINGS. 38TH ANNUAL (CAT. NO.00CH37059)
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

SENNHAUSER, U.; FRANK, A.; MAURON, P.; NELLEN, P.M.
RELIABILITY OF OPTICAL FIBER BRAGG GRATING SENSORS AT ELEVATED
TEMPERATURE
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

BANERJEE, K.; MEHROTRA, A.; HUNTER, W.; SARASWAT, K.C.; GOODSON,
K.E.; WONG, S.S.
QUANTITATIVE PROJECTIONS OF RELIABILITY AND PERFORMANCE FOR
LOW-K/CU INTERCONNECT SYSTEMS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

SHENG, L.Y.; DE TANDT, C.; RANSON, W.; VOUNCKX, R.
RELIABILITY CHARACTERIZATION OF THERMAL MICRO-STRUCTURES
IMPLEMENTED ON 0.8 /SPL MU/M CMOS CHIPS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

ALAM, M.A.; BUDE, J.; GHETTI, A.
FIELD ACCELERATION FOR OXIDE BREAKDOWN-CAN AN ACCURATE ANODE
HOLE INJECTION MODEL RESOLVE THE E VS. 1/E CONTROVERSY?
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

BERSUKER, G.; BLASCHKE, V.; CHOI, S.; WICK, D.
CONDUCTION PROCESSES IN CU/LOW-K INTERCONNECTION
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

O'DONOVAN, V.; WHISTON, S.; DEIGNAN, A.; CHLEIRIGH, C.N.
HOT CARRIER RELIABILITY OF LATERAL DMOS TRANSISTORS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

DIECI, D.; MENOZZI, R.; TOMASI, T.; SOZZI, G.; LANZIERI, C.;
CANALI, C.
BREAKDOWN AND DEGRADATION ISSUES AND THE CHOICE OF A SAFE LOAD
LINE FOR POWER HFET OPERATION
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

LI, E.; ROSENBAUM, E.; REGISTER, L.F.; TAO, J.; FANG, P.
HOT CARRIER INDUCED DEGRADATION IN DEEP SUBMICRON MOSFETS AT
100/SPL DEG/C
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

HSU, C.T.; LAU, M.M.; YEOW, Y.T.; YAO, Z.Q.
ANALYSIS OF HOT-CARRIER-INDUCED DEGRADATION IN MOSFETS BY
GATE-TO-DRAIN AND GATE-TO-SUBSTRATE CAPACITANCE MEASUREMENTS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

CANDELIER, P.; VILLANI, N.; SCHOELLKOPF, J.-P.; MORTINI, P.
ONE TIME PROGRAMMABLE DRIFT ANTIFUSE CELL RELIABILITY
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

WU, J.; ROSENBAUM, E.; MACDONALD, B.; LI, E.; TAO, J.; TRACY,
B.; FANG, P.
ANODE HOLE INJECTION VERSUS HYDROGEN RELEASE: THE MECHANISM FOR
GATE OXIDE BREAKDOWN
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

REMBE, C.; ASCHEMANN, H.; AUS DER WIESCHE, S.; HOFER, E.P.;
DEBEDA, H.; MOHR, J.; WALLRABE, U.
NONTACTILE RELIABILITY TESTING OF A MICRO OPTICAL ATTENUATOR
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

DUNN, J.; HARAME, D.; ST. ONGE, S.; JOSEPH, A.; FEILCHENFELD,
N.; WATSON, K.; SUBBANNA, S.; FREEMAN, G.; VOLDMAN, S.; AHLGREN,
D.; JOHNSON, R.
TRENDS IN SILICON GERMANIUM BICMOS INTEGRATION AND RELIABILITY
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

LEE, Y.-H.; WU, K.; LINTON, T.; MIELKE, N.; HU, S.; WALLACE, B.
CHANNEL-WIDTH DEPENDENT HOT-CARRIER DEGRADATION OF THIN-GATE
PMOSFETS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

LONG QUE; JAE-SUNG PARK; MO-HUANG LI; GIANCHANDANI, Y.B.
RELIABILITY STUDIES OF BENT-BEAM ELECTRO-THERMAL ACTUATORS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

OKANDAN, M.; FONASH, S.J.; MAITI, B.; TSENG, H.H.; TOBIN, P.
ANALYSIS OF EVOLUTION TO AND BEYOND QUASI-BREAKDOWN IN
ULTRA-THIN OXIDE AND OXYNITRIDE
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

MCKENNA, J.M.; WU, E.Y.; SHIH-HSIEN LO
TUNNELING CURRENT CHARACTERISTICS AND OXIDE BREAKDOWN IN P+ POLY
GATE PFET CAPACITORS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

BAUMANN, R.C.; SMITH, E.B.
NEUTRON-INDUCED BORON FISSION AS A MAJOR SOURCE OF SOFT ERRORS
IN DEEP SUBMICRON SRAM DEVICES
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

MENEGHESSO, G.; SANTIROSI, S.; NOVARINI, E.; CONTIERO, C.;
ZANONI, E.
ESD ROBUSTNESS OF SMART-POWER PROTECTION STRUCTURES EVALUATED BY
MEANS OF HBM AND TLP TESTS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

NING, T.H.
SILICON TECHNOLOGY DIRECTIONS IN THE NEW MILLENNIUM
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

MARCHAND, B.; BLACHIER, D.; LEROUX, C.; GHIBAUDO, G.; BALESTRA,
F.; REIMBOLD, G.
GENERATION OF HOT CARRIERS BY SECONDARY IMPACT IONIZATION IN
DEEP SUBMICRON DEVICES: MODEL AND LIGHT EMISSION
CHARACTERIZATION
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

REZAZADEH, A.A.; BASHAR, S.A.; SHENG, H.; AMIN, F.A.; CATTANI,
L.; LIOU, J.J.
BIAS AND TEMPERATURE STRESS RELIABILITY OF INGAP/GAAS HBTS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

CHIN, J.M.; PHANG, J.C.H.; CHAN, D.S.H.; SOH, C.E.; GILFEATHER,
G.
SINGLE CONTACT OPTICAL BEAM INDUCED CURRENTS (SCOBIC)-A NEW
FAILURE ANALYSIS TECHNIQUE
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

FISCHER, A.H.; ABEL, A.; LEPPER, M.; ZITZELSBERGER, A.E.; VON
GLASOW, A.
EXPERIMENTAL DATA AND STATISTICAL MODELS FOR BIMODAL EM FAILURES
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

TOSIC, N.; KUPER, F.G.; MOUTHAAN, T.
TRANSMISSION LINE MODEL TESTING OF TOP-GATE AMORPHOUS SILICON
THIN FILM TRANSISTORS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

MANHAS, S.K.; DE SOUZA, M.M.; GATES, A.S.; CHETLUR, S.C.;
SANKARA NARAYANAN, E.M.
EARLY STAGE HOT CARRIER DEGRADATION OF STATE-OF-THE-ART LDD
N-MOSFETS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

ZANONI, E.; MENEGHESSO, G.; BUTTARI, D.; MARETTO, M.; MASSARI,
G.
PULSED MEASUREMENTS AND CIRCUIT MODELING OF A NEW BREAKDOWN
MECHANISM OF MESFETS AND HEMTS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

CIAPPA, M.; FICHTNER, W.
LIFETIME PREDICTION OF IGBT MODULES FOR TRACTION APPLICATIONS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

  [1] :  [ART259]  M. CIAPPA, W. FICHTNER, Lifetime prediction of igbt modules for traction applications,IRPS'2000, RELIABILITY PHYSICS SYMPOSIUM, 2000.

VOLDMAN, S.; JULIANO, P.; JOHNSON, R.; SCHMIDT, N.; JOSEPH, A.;
FURKAY, S.; ROSENBAUM, E.; DUNN, J.; HARAME, D.; MEYERSON, B.
ELECTROSTATIC DISCHARGE AND HIGH CURRENT PULSE CHARACTERIZATION
OF EPITAXIAL-BASE SILICON-GERMANIUM HETEROJUNCTION BIPOLAR
TRANSISTORS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

NOGUCHI, K.; MATSUMOTO, A.; ODA, N.
A MODEL FOR EVALUATING CUMULATIVE OXIDE DAMAGE FROM MULTIPLE
PLASMA PROCESSES
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

NICOLLIAN, P.E.; HUNTER, W.R.; HU, J.C.
EXPERIMENTAL EVIDENCE FOR VOLTAGE DRIVEN BREAKDOWN MODELS IN ULTRATHIN GATE OXIDES
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL 2000 IEEE INTERNATIONAL ( 2000 )

  [1] : [SHEET449] P.E. NICOLLIAN, W.R. HUNTER, J.C. HU, Experimental Evidence for Voltage Driven Break-down Models in Ultrathin Gate Oxides, IRPS'2000.

KAMEYAMA, H.; OKUYAMA, Y.; KAMOHARA, S.; KUBOTA, K.; KUME, H.;
OKUYAMA, K.; MANABE, Y.; NOZOE, A.; UCHIDA, H.; HIDAKA, M.;
OGURA, K.
A NEW DATA RETENTION MECHANISM AFTER ENDURANCE STRESS ON FLASH
MEMORY
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

ZHANG, X.Y.; BANERJEE, K.; AMERASEKERA, A.; GUPTA, V.; ZHIPING
YU; DUTTON, R.W.
PROCESS AND LAYOUT DEPENDENT SUBSTRATE RESISTANCE MODELING FOR
DEEP SUB-MICRON ESD PROTECTION DEVICES
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

TAMMARO, M.
THE ROLE OF COPPER IN ELECTROMIGRATION: THE EFFECT OF A
CU-VACANCY BINDING ENERGY
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

DION, M.J.
ELECTROMIGRATION LIFETIME ENHANCEMENT FOR LINES WITH MULTIPLE
BRANCHES
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

TANNER, D.M.; WALRAVEN, J.A.; HELGESEN, K.S.; IRWIN, L.W.;
GREGORY, D.L.; STAKE, J.R.; SMITH, N.F.
MEMS RELIABILITY IN A VIBRATION ENVIRONMENT
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

ESMARK, K.; FURBOCK, C.; GOSSNER, H.; GROOS, G.; LITZENBERGER,
M.; POGANY, D.; ZELSACHER, R.; STECHER, M.; GORNIK, E.
SIMULATION AND EXPERIMENTAL STUDY OF TEMPERATURE DISTRIBUTION
DURING ESD STRESS IN SMART-POWER TECHNOLOGY ESD PROTECTION
STRUCTURES
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

ZANCHI, A.; ZAPPA, F.; GHIONI, M.; MORRISON, A.P.
ON-CHIP PROBES FOR SILICON DEFECTIVITY RANKING AND MAPPING
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

BRUYERE, S.; VINCENT, E.; GHIBAUDO, G.
QUASI-BREAKDOWN IN ULTRA-THIN SIO/SUB 2/ FILMS: OCCURRENCE
CHARACTERIZATION AND RELIABILITY ASSESSMENT METHODOLOGY
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

LEROUX, C.; ANDREUCCI, P.; REIMBOLD, G.
ANALYSIS OF OXIDE BREAKDOWN MECHANISM OCCURRING DURING ESD
PULSES
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

LEE, Y.-H.; NACHMAN, R.; SESHAN, K.; KAU, D.-C.; MIELKE, N.
ROLE OF HYDROGEN ANNEAL IN THIN GATE OXIDE FOR MULTI-METAL-LAYER
CMOS PROCESS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

MANIC, D.; PETR, J.; POPOVIC, R.S.
SHORT AND LONG-TERM STABILITY PROBLEMS OF HALL PLATES IN PLASTIC
PACKAGES
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

KUANG-PENG LIN; KAI-MING CHING; KWO-SHU HUANG; SHUN-LIANG HSU
A STUDY OF IMPLANT DAMAGE INDUCED THIN OXIDE FILM EXPANSION
DURING PHOTORESIST DRY ETCHING
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

POMPL, T.; WURZER, H.; KERBER, M.; EISELE, I.
INVESTIGATION OF ULTRA-THIN GATE OXIDE RELIABILITY BEHAVIOR BY
SEPARATE CHARACTERIZATION OF SOFT BREAKDOWN AND HARD BREAKDOWN
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

HOOK, T.B.; HARMON, D.; CHUAN LIN
DETECTION OF THIN OXIDE (3.5 NM) DIELECTRIC DEGRADATION DUE TO
CHARGING DAMAGE BY RAPID-RAMP BREAKDOWN
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

YAMADA, R.; YUGAMI, J.; OHKURA, M.
EXPERIMENTAL ANALYSIS OF GATE OXIDE DEGRADATION-EXISTENCE OF
NEUTRAL TRAP PRECURSOR, SINGLE AND MULTIPLE
TRAP-ASSISTED-TUNNELING FOR SILC MECHANISM
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

MAKABE, M.; KUBOTA, T.; KITANO, T.
BIAS-TEMPERATURE DEGRADATION OF PMOSFETS: MECHANISM AND
SUPPRESSION
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

TSU, R.; MCPHERSON, J.W.; MCKEE, W.R.
LEAKAGE AND BREAKDOWN RELIABILITY ISSUES ASSOCIATED WITH LOW-K
DIELECTRICS IN A DUAL-DAMASCENE CU PROCESS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

YAMADA, R.; MORI, Y.; OKUYAMA, Y.; YUGAMI, J.; NISHIMOTO, T.;
KUME, H.
ANALYSIS OF DETRAP CURRENT DUE TO OXIDE TRAPS TO IMPROVE FLASH
MEMORY RETENTION
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

CHUNG, S.S.; CHEN, S.J.; KAO, H.L.; LUO, S.J.; LIN, H.C.
CHARGE PUMPING TECHNIQUE FOR THE EVALUATION OF PLASMA INDUCED
EDGE DAMAGE IN SHALLOW S/D EXTENSION THIN GATE OXIDE NMOSFETS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

CORY, A.R.
IMPROVED RELIABILITY PREDICTION THROUGH REDUCED-STRESS
TEMPERATURE CYCLING
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

KRIEG, K.; QI, R.; THOMSON, D.; BRIDGES, G.
ELECTRICAL PROBING OF DEEP SUB-MICRON ICS USING SCANNING PROBES
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

WEN-JIE QI; NIEH, R.; ONISHI, R.; BYOUNG HUN LEE; LAEGU KANG;
YONGJOO JEON; GOPALAN, S.; LEE, J.C.
TEMPERATURE EFFECT ON THE RELIABILITY OF ZRO/SUB 2/ GATE
DIELECTRIC DEPOSITED DIRECTLY ON SILICON
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

JIANN HENG CHEN; TAN FU LEI; CHIA LIN CHEN; TIEN SHENG CHAO; WEN
YING WEN; KUAG TING CHEN
HIGH PERFORMANCE DEEP-SUBMICRON N-MOSFETS BY NITROGEN
IMPLANTATION AND IN-SITU HF VAPOR CLEAN
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

VANDERLINDE, W.E.; CHENEY, M.E.; MCDANIEL, E.B.; SKINNER, K.L.;
KNAUSS, L.A.; FRAZIER, B.M.; CHRISTEN, H.M.
LOCALIZING POWER TO GROUND SHORTS IN A CHIPS-FIRST MCM BY
SCANNING SQUID MICROSCOPY
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

KING, E.E.; LACOE, R.C.; WANG-RATKOVIC, J.
THE ROLE OF THE SPACER OXIDE IN DETERMINING WORST-CASE
HOT-CARRIER STRESS CONDITIONS FOR NMOS LDD DEVICES
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

LISENKER, B.; MITNICK, Y.
RELIABILITY ASSESSMENT THROUGH DEFECT BASED TESTING
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

SUEHLE, J.S.; VOGEL, E.M.; BIN WANG; BERNSTEIN, J.B.
TEMPERATURE DEPENDENCE OF SOFT BREAKDOWN AND WEAR-OUT IN SUB-3
NM SIO/SUB 2/ FILMS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

LI SHI; OHMYOUNG KWON; GUANGHUA WU; MAJUMDAR, A.
QUANTITATIVE THERMAL PROBING OF DEVICES AT SUB-100 NM RESOLUTION
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

MITNICK, Y.; LISENKER, B.; SASSON, U.; MILLER, R.
MULTI PARAMETER METHOD FOR YIELD ANALYSIS AND RELIABILITY
ASSESSMENT
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

NOGUCHI, J.; OHASHI, N.; YASUDA, J.; JIMBO, T.; YAMAGUCHI, H.;
OWADA, N.; TAKEDA, K.; HINODE, K.
TDDB IMPROVEMENT IN CU METALLIZATION UNDER BIAS STRESS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

BANERJEE, K.; DAE-YONG KIM; AMERASEKERA, A.; CHENMING HE; WONG,
S.S.; GOODSON, K.E.
MICROANALYSIS OF VLSI INTERCONNECT FAILURE MODES UNDER
SHORT-PULSE STRESS CONDITIONS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

ABE, K.; TOKITOH, S.; SHIH-CHANG CHEN; KANAMORI, J.; ONODA, H.
EFFECT OF TI INSERTION BETWEEN CU AND TIN LAYERS ON
ELECTROMIGRATION RELIABILITY IN CU/(TI)/TIN/TI LAYERED DAMASCENE
INTERCONNECTS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

TANNER, D.M.; WALRAVEN, J.A.; HELGESEN, K.; IRWIN, L.W.; BROWN,
F.; SMITH, N.F.; MASTERS, N.
MEMS RELIABILITY IN SHOCK ENVIRONMENTS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

SUNG-KYE PARK; MOON-SIK SUH; JAE-YOUNG KIM; GYU-HAN YOON;
SUNG-HO JANG
CMOSFET CHARACTERISTICS INDUCED BY MOISTURE DIFFUSION FROM
INTER-LAYER DIELECTRIC IN 0.23 UM DRAM TECHNOLOGY WITH SHALLOW
TRENCH ISOLATION
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

MANI, S.S.; FLEMING, J.G.; WALRAVEN, J.A.; SNIEGOWSKI, J.J.; SE
BEER, M.P.; IRWIN, L.W.; TANNER, D.M.; LAVAN, D.A.; DUGGER,
M.T.; JAKUBCZAK, J.; MILLER, W.M.
EFFECT OF W COATING ON MICROENGINE PERFORMANCE
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

MOORE, T.; JARVIS, J.
FAILURE ANALYSIS AND STRESS SIMULATION IN SMALL MULTICHIP BGAS
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

IELMINI, D.; SPINELLII, A.S.; LACAITA, A.L.; GHIDINI, G.
EVIDENCE FOR RECOMBINATION AT OXIDE DEFECTS AND NEW SILC MODEL
RELIABILITY PHYSICS SYMPOSIUM, 2000. PROCEEDINGS. 38TH ANNUAL
2000 IEEE INTERNATIONAL ( 2000 )

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