V. BENDA, "Reliability of power semiconductor devices - Problems and trends", PEMC'96, vol.1, pp. 30-35, 2-4 Sept. 1996.

V. BENDA, "Reliability of power semiconductor devices - Problems and trends", PEMC'96, vol.1, pp. 30-35, 2-4 Sept. 1996. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [SHEET156]

Info : INSPEC Answer Number 35 - 22/02/2000

Titre : V. BENDA, Reliability of power semiconductor devices - Problems and trends, PEMC'96, vol.1, pp. 30-35, 2-4 Sept. 1996.

Cité dans : [DATA035] Recherche sur les mots clés thermal + fatigue + semiconductor et reliability + thermal + cycle, mars 2004.

Auteur : Benda, V. (Dept. of Electrotechnology, Czech Tech. Univ., Prague, Czech Republic)

Source : PEMC '96. 7th International Power Electronics and Motion Control Conference, Exhibition, Tutorials. Proceedings
Editors : Nagy, I.; Halasz, S.; Kurutz, K. Budapest, Hungary: Tech. Univ. Budapest, 1996.
Pages : 30 - 35
Volume : 1 of 3 vol. (xxii+460+677+709) pp.
Conference : Budapest, Hungary
Date : 2-4 Sept 1996
Sponsor(s) : Hungarian Acad. Sci.; IEEE; Ganz-Ansaldo; Nat. Committee for Technol. Dev.; et al
ISBN : 963-420-487-2
Document_Type : Conference Article
Treatment_Code : Theoretical; Experimental
Info : Country of Publication : Hungary
Language : English
Stockage : Thierry LEQUEU (10 mai 2000)

Abstract :
This paper presents an overview of the main causes of failures of
modern power semiconductor switching devices such as power MOSFETs,
IGBTs and GTOs. Attention is paid especially to problems of both the
homogeneity of semiconductor structures and operating conditions.
One of the most frequent causes of device failure is
electrothermally induced stress (especially in the case of power
module encapsulations), which can result in thermal fatigue faults
in sequential operation mode applications. A comparison of empirical
formulae with experimental results has been carried out and
considerations concerning conditioning reliability of power
semiconductor devices have been formulated. Some modern trends in
controlling devices and the possible use of new semiconductor
materials for device fabrication from viewpoints of reliability are
also discussed.

Accession_Number : 1997:5751153

References : 58 refs.

  [1] : [LIVRE201] K.V. RAVI, Imperfections and impurities in semiconductor silicon, 1981, J.Wiley & Sons, New York.

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