J.-M. PETER, "Power semiconductors. New devices pursue lower on-resistance, higher voltage operation", PCIM Power Electronics Systems, January 1999, vol. 25, no. 1, pp. 24,26-32.

J.-M. PETER, "Power semiconductors. New devices pursue lower on-resistance, higher voltage operation", PCIM Power Electronics Systems, January 1999, vol. 25, no. 1, pp. 24,26-32. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [SHEET010]

Info : INSPEC Answer Number 1 -13/01/200

Titre : J.-M. PETER, Power semiconductors. New devices pursue lower on-resistance, higher voltage operation, PCIM Power Electronics Systems, January 1999, vol. 25, no. 1, pp. 24,26-32.

Cité dans : [DATA004] Recherche sur l'auteur Jean Marie PETER, janvier 2000.

Auteur : Jean-Marie Peter

Source : PCIM Power Electronics Systems vol.25, no.1
Pages : p.24, 26 à 32.
Date : Jan. 1999
Published : by Intertec International,
CODEN : PPESFB
ISSN : 0885-0259
SICI : 0885-0259(199901)25:1L.24:PSDP;1-4
Info : Country of Publication : United States - Language : English

Abstract :
The author describes how the past three years have seen three
advancements in power semiconductors: the IGCT that can replace the
GTO; a drastic reduction of the RDS(on) for the power MOSFET; and
the IEGT that may succeed the IGBT for high voltage applications.

Accession_Number : 1999:6235200

Références : 13 refs.

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  [3] : [SHEET115] H. ZELLER, High Power Components. From the State-of-the-Art to Future Trends, PCIM 1998, may 26-28, 1998, NÜRNBERG, GERMANY.
  [4] :  [PAP158]  -------
  [5] : [SHEET113] V.A.K. TEMPLE, MOS Controled Thyristors - A new class of power devices, IEEE Transactions on Electron Devices, vol. ED-33, pp. 1609-1618, 1986
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 [12] : [SHEET116] L. LORENZ, K. KANELIS, System solution for consumer drives, PCIM'98 Forum, Hong Kong, October 14 - 15, 1998
 [13] : [SHEET117] H. MATSUDA, New Advanced Power Semiconductors. From the State-of-the-Art to Future Trends, PCIM 1998, may 26-28, 1998, NÜRNBERG, GERMANY.

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