Revue : [REVUE435]

Titre : Elsevier Science, Microelectronics Reliability, Volume 43, Issues 9-11, Pages 1351-1968, September-November 2003.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.
Cité dans : [DIV365]  ESREF'2003, 14th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, du 6 au 10 octobre 2003.

Volume : 43
Issues : 9-11
Pages : 1351 - 1968
Date : September - November 2003
Info : 14th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France, 7 October - 10 October 2003
Edited : by N. Labat, A. Touboul

[1] : , Pages 1351-1352
Nathalie Labat and André Touboul
Lien : vide.pdf - | Full Text + Links | PDF (46 K)

[2] : Reliability of ultra-thin oxides in CMOS circuits, Pages 1353-1360
J. H. Stathis, B. P. Linder, R. Rodríguez and S. Lombardo
Lien : vide.pdf - | PDF (1099 K)

[3] : SOI design challenges, Pages 1361-1367
D. Dufourt and J. L. Pelloie
Lien : vide.pdf - | PDF (1310 K)

[4] : Trends in Failure Analysis, Pages 1369-1375
Lawrence C. Wagner
Lien : vide.pdf - | PDF (917 K)

[5] : Pad Over Active (POA) solutions for three metal level BCD5 mixed power
process - Design and validation of ESD protections, Pages 1377-1382
A. Andreini, C. Neva, L. Renard, G. Sironi, F. Speroni, L. Sponton, F.
Tampellini and R. Tiziani
Lien : vide.pdf - | PDF (1505 K)

[6] : MALTY––A memory test structure for analysis in the early phase of the
technology development, Pages 1383-1387
Th. Nirschl, M. Ostermayr, A. Olbrich, D. Vietzke, M. Omer, C. Linnenbank,
U. Schaper, Y. Pottgiesser, J. Pottgiesser, M. Johansson et al.
Lien : vide.pdf - | PDF (1296 K)

[7] : Correlation of gate oxide reliability and product tests on leading edge
DRAM technology, Pages 1389-1393
G. Aichmayr
Lien : vide.pdf - | PDF (1223 K)

[8] : A procedure for reliability control and optimization of mixed-signal smart
power CMOS pocesses, Pages 1395-1400
A. Aal
Lien : vide.pdf - | PDF (1069 K)

[9] : The right way to assess electronic system reliability: FIDES, Pages
1401-1404
P. Charpenel, F. Davenel, R. Digout, M. Giraudeau, M. Glade, JP. Guerveno,
N. Guillet, A. Lauriac, S. Male, D. Manteigas et al.
Lien : vide.pdf - | PDF (498 K)

[10] : A study of considering the reliability issues on ASIC/Memory integration
by SIP (System-in-Package) technology, Pages 1405-1410
Yong-Ha Song, S. G. Kim, S. B. Lee, K. J. Rhee and T. S. Kim
Lien : vide.pdf - | PDF (1207 K)

[11] : Reliability in automotive electronics: a case study applied to diesel
engine control, Pages 1411-1416
G. Cassanelli, F. Fantini, G. Serra and S. Sgatti
Lien : vide.pdf - | PDF (1316 K)

[12] : Electronic structure of transition metal/rare earth alternative high-K
gate dielectrics: interfacial band alignments and intrinsic defects, Pages
1417-1426
G. Lucovsky
Lien : vide.pdf - | PDF (1598 K)

[13] : Increased hot carrier effects in Gate-All-Around SOI nMOSFET's, Pages
1427-1432
Jong Tae Park, Nag Jong Choi, Chong Gun Yu, Seok Hee Jeon and Jean-Pierre
Colinge
Lien : vide.pdf - | PDF (714 K)

[14] : Influence of nitradation in ultra-thin oxide on the gate current
degradation of N and PMOS devices, Pages 1433-1438
M. Fadlallah, C. Petit, A. Meinertzhagen, G. Ghibaudo, M. Bidaud, O.
Simonetti and F. Guyader
Lien : vide.pdf - | PDF (708 K)

[15] : Influence and model of gate oxide breakdown on CMOS inverters, Pages
1439-1444
R. Rodríguez, J. H. Stathis, B. P. Linder, R. V. Joshi and C. T. Chuang
Lien : vide.pdf - | PDF (729 K)

[16] : Charge trapping in SiO2/HfO2/TiN gate stack, Pages 1445-1448
F Lime, G Ghibaudo and B. Guillaumot
Lien : vide.pdf - | PDF (496 K)

[17] : Reservoir effect and maximum allowed VIA misalignment for AlCu
interconnect with tungsten VIA plug, Pages 1449-1454
Yuan Li, Klaas Jelle Veenstra, Jerôme Dubois, Lei Peters-Wu, Agnes van
Zomeren and Fred Kuper
Lien : vide.pdf - | PDF (1379 K)

[18] : Effects of burn-in stressing on post-irradiation annealing response of
power VDMOSFETs, Pages 1455-1460
S. Djoric-Veljkovic, I. Manic, V. Davidovic, S. Golubovic and N.
Stojadinovic
Lien : vide.pdf - | PDF (915 K)

[19] : Electrical analysis of DRAM cell transistors for the root-cause addressing
of the tRDL time-delay failure, Pages 1461-1464
Young Pil Kim, Uin Chung, Joo Tae Moon and Sang U. Kim
Lien : vide.pdf - | PDF (478 K)

[20] : Characterization of thin and ultra-thin SiO2 films and SiO2/Si interfaces
with combined conducting and topographic atomic force microscopy, Pages
1465-1470
Werner Frammelsberger, Guenther Benstetter, Thomas Schweinboeck, Richard J
Stamp and Janice Kiely
Lien : vide.pdf - | PDF (1328 K)

[21] : Correlation of failure mechanism of constant-current-stress and
constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by
TEM, Pages 1471-1476
K. L Pey, C. H. Tung, M. K. Radhakrishnan, L. J. Tang, Y. Sun, X. D. Wang
and W. H. Lin
Lien : vide.pdf - | PDF (1143 K)

[22] : Hot electron induced punchthrough voltage of p-channel SOI MOSFET's at
room and elevated temperatures, Pages 1477-1482
Se Re Na Yun, Won Sub Park, Byung Ha Lee and Jong Tae Park
Lien : vide.pdf - | PDF (615 K)

[23] : A new method for the analysis of high-resolution SILC data, Pages
1483-1488
S. Aresu, W. De Ceuninck, G. Knuyt, J. Mertens, J. Manca, L. De Schepper,
R. Degraeve, B. Kaczer, M. D'Olieslaeger and J. D'Haen
Lien : vide.pdf - | PDF (492 K)

[24] : Contribution of oxide traps on defect creation and LVSILC conduction in
ultra thin gate oxide devices, Pages 1489-1493
D. Zander, F. Saigne, A. Meinertzhagen and C. Petit
Lien : vide.pdf - | PDF (542 K)

[25] : Modeling of retention time degradation due to inelastic trap-assisted
tunneling in EEPROM devices, Pages 1495-1500
A. Gehring, F. Jiménez-Molinos, H. Kosina, A. Palma, F. Gámiz and S.
Selberherr
Lien : vide.pdf - | PDF (1075 K)

[26] : Oxide conductivity increase during the progressive-breakdown of SiO2 gate
oxides observed with C-AFM, Pages 1501-1505
M. Porti, M. Nafría and X. Aymerich
Lien : vide.pdf - | PDF (734 K)

[27] : Pre-breakdown leakage current fluctuations of thin gate oxide, Pages
1507-1512
Joachim C. Reiner
Lien : vide.pdf - | PDF (833 K)

[28] : Ageing simulation of MOSFET circuit using a VHDL-AMS behavioural
modelling: an experimental case study, Pages 1513-1518
B. Mongellaz, F. Marc and Y. Danto
Lien : vide.pdf - | PDF (662 K)

[29] : Gate oxide breakdown characterization on 0.13m CMOS technology, Pages
1519-1523
D. Faure, D. Bru, C. Ali, C. Giret and K. Christensen
Lien : vide.pdf - | PDF (1143 K)

[30] : Charging induced damage by photoconduction through thick inter metal
dielectrics, Pages 1525-1529
Jan Ackaert, Klara Bessemans and Eddy De Backer
Lien : vide.pdf - | PDF (744 K)

[31] : Degradation in polysilicon thin film transistors related to the quality of
the polysilicon material, Pages 1531-1535
H. Toutah, B. Tala-Ighil, J. F. Llibre, B. Boudart, T. Mohammed-Brahim and
O. Bonnaud
Lien : vide.pdf - | PDF (950 K)

[32] : Multi-finger turn-on circuits and design techniques for enhanced ESD
performance and width scaling, Pages 1537-1543
S. Trinh, M. Mergens, K. Verhaege, C. Russ, J. Armer, P. Jozwiak, B.
Keppens, R. Mohn, G. Taylor, F. De Ranter and B. Van Camp
Lien : vide.pdf - | PDF (1626 K)

[33] : Dependence of copper interconnect electromigration phenomenon on barrier
metal materials, Pages 1545-1550
Masashi Hayashi, Shinji Nakano and Tetsuaki Wada
Lien : vide.pdf - | PDF (1323 K)

[34] : Determination of the ESD Failure Cause Through its Signature, Pages
1551-1556
M. Zecri, P. Besse, P. Givelin, M. Nayrolles, M. Bafleur and N. Nolhier
Lien : vide.pdf - | PDF (1481 K)

[35] : A dual-beam Michelson interferometer for investigation of trigger dynamics
in ESD protection devices under very fast TLP stress, Pages 1557-1561
V. Dubec, S. Bychikhin, M. Blaho, D. Pogany, E. Gornik, J. Willemen, N.
Qu, W. Wilkening, L. Zullino and A. Andreini
Lien : vide.pdf - | PDF (1113 K)

[36] : Short defect characterization based on TCR parameter extraction, Pages
1563-1568
A. Firiti, D. Faujour, G. Haller, J. M. Moragues, V. Goubier, P. Perdu, F.
Beaudoin and D. Lewis
Lien : vide.pdf - | PDF (1636 K)

[37] : Role of package parasitics and substrate resistance on the Charged Device
Model (CDM) failure levels –An explanation and die protection strategy,
Pages : 1569-1575
M. S. B. Sowariraj, Theo Smedes, Cora Salm, Ton Mouthaan and Fred G Kuper
Lien : vide.pdf - | PDF (1294 K)

[38] : Characterization of ESD induced defects using Photovoltaic Laser
Stimulation (PLS), Pages 1577-1582
T. Beauchêne, D. Tremouilles, D. Lewis, P. Perdu and P. Fouillat
Lien : vide.pdf - | PDF (1245 K)

[39] : Analysis and Prevention on NC-ball induced ESD Damages in a 683-Pin BGA
Packaged Chipset IC, Pages 1583-1588
Wen-Yu Lo and Ming-Dou Ker
Lien : vide.pdf - | PDF (1386 K)

[40] : Optimization of ESD protection structures suitable for BCD6 smart power
technology, Pages 1589-1594
G. Meneghesso, N. Novembre, E. Zanoni, L. Sponton, L. Cerati and G. Croce
Lien : vide.pdf - | PDF (674 K)

[41] : Single contact beam induced current phenomenon for microelectronic failure
analysis, Pages 1595-1602
JCH Phang, DSH Chan, VKS Ong, S Kolachina, JM Chin, M Palaniappan, G
Gilfeather and YX Seah
Lien : vide.pdf - | PDF (1406 K)

[42] : Latchup Analysis Using Emission Microscopy, Pages 1603-1608
Franco Stellari, Peilin Song, Moyra K. McManus, Alan J. Weger, Robert
Gauthier, Kiran V. Chatty, Mujahid Muhammad, Pia Sanda, Philip Wu and
Steve Wilson
Lien : vide.pdf - | PDF (1859 K)

[43] : Laser Seebeck Effect Imaging (SEI) and Peltier Effect Imaging (PEI):
complementary investigation methods., Pages 1609-1613
Stefan Dilhaire, Amine Salhi, Stéphane Grauby and Wilfrid Claeys
Lien : vide.pdf - | PDF (1013 K)

[44] : Low-cost backside laser test method to pre-characterize the COTS IC's
sensitivity to Single Event Effects., Pages 1615-1619
F. Darracq, H. Lapuyade, N. Buard, P. Fouillat, R. Dufayel and T. Carriere
Lien : vide.pdf - | PDF (616 K)

[45] : An ultra-low dark-count and jitter, superconducting, single-photon
detector for emission timing analysis of integrated circuits, Pages
1621-1626
P. LeCoupanec, W. K. Lo and K. R. Wilsher
Lien : vide.pdf - | PDF (1132 K)

[46] : A low energy FIB processing, repair, and test system, Pages 1627-1631
Katsuyoshi Miura, Tomoyuki Kobatake, Koji Nakamae and Hiromu Fujioka
Lien : vide.pdf - | PDF (792 K)

[47] : A new technique for contactless current contrast imaging of high frequency
signals, Pages 1633-1638
F. Seifert, R. Weber, W. Mertin and E. Kubalek
Lien : vide.pdf - | PDF (1209 K)

[48] : Time Resolved Photoemission (PICA) – From the Physics to Practical
Considerations, Pages 1639-1644
M. Remmach, R. Desplats, F. Beaudoin, E. Frances, P. Perdu and D. Lewis
Lien : vide.pdf - | PDF (1320 K)

[49] : Limitations to photon-emission microscopy when applied to "hot" devices,
Pages : 1645-1650
Hervé Deslandes and T. R. Lundquist
Lien : vide.pdf - | PDF (1391 K)

[50] : A New Procedure to Define the Zero-Field Condition and to Delineate
pn-Junctions in Silicon Devices by Scanning Capacitance Microscopy, Pages
1651-1656
Maria Stangoni, Mauro Ciappa and Wolfgang Fichtner
Lien : vide.pdf - | PDF (882 K)

[51] : Advances in scanning SQUID microscopy for die-level and package-level
fault isolation, Pages 1657-1662
L. A. Knauss, A. Orozco, S. I. Woods and A. B. Cawthorne
Lien : vide.pdf - | PDF (1439 K)

[52] : Faster IC Analysis with PICA Spatial Temporal Photon Correlation and CAD
Autochanneling, Pages 1663-1668
R. Desplats, A. Eral, F. Beaudoin, P. Perdu, A. Weger, M. McManus, P. Song
and F. Stellari
Lien : vide.pdf - | PDF (1650 K)

[53] : Backside Flip-Chip testing by means of high-bandwidth luminescence
detection, Pages 1669-1674
A. Tosi, F. Stellari, F. Zappa and S. Cova
Lien : vide.pdf - | PDF (1374 K)

[54] : Semiconductor material analysis based on microcalorimeter EDS, Pages
1675-1680
B. Simmnacher, R. Weiland, J. Höhne, F. v. Feilitzsch and C. Hollerith
Lien : vide.pdf - | PDF (1154 K)

[55] : From Static Thermal and Photoelectric Laser Stimulation (TLS/PLS) to
Dynamic Laser Testing, Pages 1681-1686
F. Beaudoin, R. Desplats, P. Perdu, Abdellatif Firiti, G. Haller, V.
Pouget and D. Lewis
Lien : vide.pdf - | PDF (1395 K)

[56] : A Novel Application of C-AFM: Deep Sub-micron Single Probing for IC
Failure Analysis, Pages 1687-1692
Jon C. Lee and J. H. Chuang
Lien : vide.pdf - | PDF (1315 K)

[57] : Strain investigation around shallow trench isolations : a LACBED Study,
Pages : 1693-1698
Paul-Henri Albarède, S. Lavagne and C. Grosjean
Lien : vide.pdf - | PDF (1223 K)

[58] : Thermally Induced Voltage Alteration (TIVA) applied to ESD induced
failures, Pages 1699-1704
N. Lucarelli, M. Cavone, M. Muschitiello, D. Centrone and F. Corsi
Lien : vide.pdf - | PDF (1369 K)

[59] : Wide band gap semiconductor reliability : Status and trends, Pages
1705-1712
S. L. Delage and C. Dua
Lien : vide.pdf - | PDF (1722 K)

[60] : Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon,
SiC and sapphire substrates, Pages 1713-1718
A. Curutchet, N. Malbert, N. Labat, A Touboul, C. Gaquière, A. Minko and
M. Uren
Lien : vide.pdf - | PDF (1313 K)

[61] : High Electric Field Induced Degradation of the DC Characteristics in
Si/SiGe HEMT's, Pages 1719-1723
J. Kuchenbecker, M. Borgarino, M. Zeuner, U. König, R. Plana and F.
Fantini
Lien : vide.pdf - | PDF (1165 K)

[62] : 1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal
stresses, Pages 1725-1730
J. C. Martin, C. Maneux, N. Labat, A. Touboul, M. Riet, S. Blayac, M. Kahn
and J. Godin
Lien : vide.pdf - | PDF (1227 K)

[63] : High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and
parasitic effects, Pages 1731-1736
M. Belhaj, C. Maneux, N. Labat, A. Touboul and P. Bove
Lien : vide.pdf - | PDF (876 K)

[64] : Reliability of visible GaN LEDs in plastic package, Pages 1737-1742
G. Meneghesso, S. Levada, E. Zanoni, G. Scamarcio, G. Mura,S. Podda, M.
Vanzi, S. Du and I. Eliashevich
Lien : vide.pdf - | PDF (1247 K)

[65] : Impact of 1.55 m laser diode degradation laws on fibre optic system
performances using a system simulator, Pages 1743-1749
L. Mendizabal, J. L. Verneuil, L. Bechou, C. Aupetit-Berthelemot, Y.
Deshayes, F. Verdier, J. M. Dumas, Y. Danto, D. Laffitte, J. L. Goudard
and Y. Hernandez
Lien : vide.pdf - | PDF (1075 K)

[66] : High reliability level demonstrated on 980nm laser diode, Pages 1751-1754
J. Van de Casteele, D. Laffitte, G. Gelly, C. Starck and M. Bettiati
Lien : vide.pdf - | PDF (775 K)

[67] : Solar Cell Analysis with Light Emission and OBIC Techniques, Pages
1755-1760
K. Sanchez, R. Desplats, G. Perez, V. Pichetto, F. Beaudoin and P. Perdu
Lien : vide.pdf - | PDF (1453 K)

[68] : New method of qualification applied to optical amplifier with electronics,
Pages : 1761-1766
C. Gautier, J. Périnet, E. Nissou and D. Laffitte
Lien : vide.pdf - | PDF (1124 K)

[69] : Reliability of optoelectronics components: towards new qualification
practices, Pages 1767-1769
J L Goudard, X Boddaert, J Périnet and D Laffitte
Lien : vide.pdf - | PDF (401 K)

[70] : On the behaviour of the selective iodine-based gold etch for the failure
analysis of aged optoelectronic devices, Pages 1771-1776
G. Mura, M. Vanzi, M. Stangoni, M. Ciappa and W. Fichtner
Lien : vide.pdf - | PDF (1237 K)

[71] : The challenges of virtual prototyping and qualification for future
microelectronics, Pages 1777-1783
G. Q. Zhang
Lien : vide.pdf - | PDF (1036 K)

[72] : Advantage of In-situ over Ex-situ techniques as reliability tool: Aging
kinetics of Imec's MCM-D discrete passives devices., Pages 1785-1790
P. Soussan, G. Lekens, R. Dreesen, W. De Ceuninck and E. Beyne
Lien : vide.pdf - | PDF (1291 K)

[73] : Deformation and damage of a solder–copper joint, Pages 1791-1796
P. Tropea, A. Mellal and J. Botsis
Lien : vide.pdf - | PDF (1659 K)

[74] : Direct measurement of residual stress in integrated circuit interconnect
features, Pages 1797-1801
A. B. Horsfall, J. M. M. dos Santos, S. M. Soare, N. G. Wright, A. G.
O'Neill, S. J. Bull, A. J. Walton, A. M. Gundlach and J. T. M. Stevenson
Lien : vide.pdf - | PDF (907 K)

[75] : Application of Picosecond Ultrasonics to Non-Destructive Analysis in VLSI
circuits, Pages 1803-1807
G. Andriamonje, V. Pouget, Y. Ousten, D. Lewis, Y. Danto, J. M. Rampnoux,
Y. Ezzahri, S. Dilhaire, S. Grauby, W. Claeys et al.
Lien : vide.pdf - | PDF (1429 K)

[76] : Magnetic emission mapping for passive integrated components
characterisation, Pages 1809-1814
O. Crépel, R. Desplats, Y. Bouttement, P. Perdu, C. Goupil, P. Descamps,
F. Beaudoin and L. Marina
Lien : vide.pdf - | PDF (1336 K)

[77] : Investigation of delaminations during thermal stress: scanning acoustic
microscopy covering low and high temperatures, Pages 1815-1820
P. Rajamand, R. Tilgner, R. Schmidt, J. Baumann, P. Klofac and M.
Rothenfusser
Lien : vide.pdf - | PDF (1438 K)

[78] : Simulation of time depending void formation in copper, aluminum and
tungsten plugged via structures, Pages 1821-1826
David Dalleau, Kirsten Weide-Zaage and Yves Danto
Lien : vide.pdf - | PDF (1297 K)

[79] : Laser-assisted decapsulation of plastic-encapsulated devices, Pages
1827-1831
M. Krüger, J. Krinke, K. Ritter, B. Zierle and M. Weber
Lien : vide.pdf - | PDF (1419 K)

[80] : Aluminum bond-wire properties after 1 billion mechanical cycles, Pages 1833-1838
G. Lefranc, B. Weiss, C. Klos, J. Dick, G. Khatibi and H. Berg
Lien : vide.pdf - | PDF (1704 K)

[81] : Reliability aspects of semiconductor devices in high temperature applications, Pages 1839-1846
W. Kanert, H. Dettmer, B. Plikat and N. Seliger
Lien : private/KANERT1.pdf - 1334 Ko, 8 pages.

  [1] :  [ART440]  W. KANERT, H. DETTMER, B. PLIKAT AND N. SELIGER, Reliability aspects of semiconductor devices in high temperature applications, Microelectronics Reliability, Volume 43, Issues 9-11, 14th European Symposium on Reliability of Electron Devices, Failure Phy

[82] : Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment, Pages 1847-1851
F. Velardia, F. Iannuzzo, G. Busatto, J. Wyss, A. Sanseverino, A. Candelori, G. Currò, A. Cascio and F. Frisina
Lien : vide.pdf - | PDF (1256 K)

[83] : Methodology to evaluate the correspondence between real conditions and accelerated tests of a thyristor system used in a power plant, Pages 1853-1858
Alexandrine Guédon, Eric Woirgard, Christian Zardini and Guillaume Simon
Lien : private/GUEDON1.pdf - 1407 Ko, 6 pages.

  [1] :  [ART439]  A. GUEDON, E. WOIRGARD, C. ZARDINI, G. SIMON, Methodology to evaluate the correspondence between real conditions and accelerated tests of a thyristor system used in a power plant, Microelectronics Reliability, Volume 43, Issues 9-11, September-November

[84] : Reliability of low current electrical spring contacts in power modules
Pages : 1859-1864
E. Hornung and U. Scheuermann
Lien : vide.pdf - | PDF (1690 K)

[85] : Robustness improvement of VDMOS transistors in Bipolar/CMOS/DMOS technology
Pages 1865-1869
Y. Rey-Tauriac, O. de Sagazan, M. Taurin and O. Bonnaud
Lien : vide.pdf - | PDF (853 K)

[86] : High temperature reliability on automotive power modules verified by power cycling tests up to 150°C, Pages 1871-1876
G. Coquery, G. Lefranc, T. Licht, R. Lallemand, N. Seliger and H. Berg
Lien : vide.pdf - | PDF (1266 K)

[87] : Hot-Spot Meaurements and Analysis of Electro-Thermal Effects in Low-Voltage Power-MOSFET's, Pages 1877-1882
A. Castellazzi, V. Kartal, R. Kraus, N. Seliger, M. Honsberg-Riedl and D. Schmitt-Landsiedel
Lien : vide.pdf - | PDF (1417 K)

[88] : Advanced Local Lifetime Control for Higher Reliability of Power Devices
Pages : 1883-1888
J. Vobecký and P. Hazdra
Lien : vide.pdf - | PDF (702 K)

[89] : Improving SiC lateral DMOSFET reliability under high field stress
Pages : 1889-1894
T. Ayalew, A. Gehring, J. M. Park, T. Grasser and S. Selberherr
Lien : vide.pdf - | PDF (938 K)

[90] : Avalanche breakdown capability of Power DMOS Transistors and the Wunsch-Bell relation
Pages : 1895-1900
A. Icaza Deckelmann, G. Wachutka, F. Hirler, J. Krumrey and R. Henninger
Lien : vide.pdf - | PDF (1043 K)

[91] : IGBT Power modules thermal characterization : what is the optimum between a low current - high voltage or a high current - low voltage test condition for the same electrical power?
Pages : 1901-1906
S. Azzopardi, E. Woirgard, J. -M. Vinassa, O. Briat and C. Zardini
Lien : private/AZZOPARDI2.pdf - | PDF (1061 K)

  [1] :  [ART437]  S. AZZOPARDI, E. WOIRGARD, J.-M. VINASSA, O. BRIAT, C. ZARDINI, IGBT Power modules thermal characterization : what is the optimum between a low current - high voltage or a high current - low voltage test condition for the same electrical power?, Microel

[92] : Non-Destructive Detection of Current Distribution in Power Modules based
on Pulsed Magnetic Measurement, Pages 1907-1912
G. Busatto, F. Iannuzzo, F. Velardi, M. Valentino and G. P. Pepe
Lien : vide.pdf - | PDF (1503 K)

[93] : Surface leakage current related failure of power silicon devices operated
at high junction temperature, Pages 1913-1918
K. I. Nuttall, O. Buiu and V. V. N. Obreja
Lien : vide.pdf - | PDF (848 K)

[94] : Feedback of MEMS reliability study on the design stage: a step toward
Reliability Aided Design (RAD), Pages 1919-1928
L. Buchaillot
Lien : vide.pdf - | PDF (1940 K)

[95] : Reliability studies on integrated GaAs power-sensor structures using
pulsed electrical stress, Pages 1929-1933
C. Sydlo, K. Mutamba, L. Divac Krnic, B. Mottet and H. L. Hartnagel
Lien : vide.pdf - | PDF (1138 K)

[96] : Characterization and reliability of a switch matrix based on MOEMS
technology, Pages 1935-1937
I. Boyer Heard, R. Coquillé, D. Rivière and P. -Y. Klimonda
Lien : vide.pdf - | PDF (776 K)

[97] : Moisture diffusion in BCB resins used for MEMS packaging, Pages 1939-1944
A. Tetelin, C. Pellet, J-Y. Delétage, B. Carbonne and Y. Danto
Lien : vide.pdf - | PDF (1129 K)

[98] : MEMS reliability modelling methodology: application to wobble micromotor
failure analysis., Pages 1945-1949
S. Muratet, JY. Fourniols, G. Soto-Romero, A. Endemaño, A. Marty and M.
Desmulliez
Lien : vide.pdf - | PDF (748 K)

[99] : Determination of passive SiO2-Au microstructure resonant frequencies.,
Pages : 1951-1955
Guillaume Marinier, Stefan Dilhaire, Luis David Patino Lopez and Mohamed
Benzohra
Lien : vide.pdf - | PDF (852 K)

[100] : Application of MEMS behavioral simulation to Physics of Failure (PoF)
modeling, Pages 1957-1962
P. Schmitt, F. Pressecq, X. Lafontan, Q. H. Duong, P. Pons, J. M. Nicot,
C. Oudea, D. Estève, J. Y. Fourniols and H. Camon
Lien : vide.pdf - | PDF (1299 K)

[101] : Correlation between X-ray micro-diffraction and a developed analytical
model to measure the residual stresses in suspended structures in MEMS,
Pages : 1963-1968
S. Rigo, P. Goudeau, J-M. Desmarres, T. Masri, J-A. Petit and P. Schmitt
Lien : vide.pdf - | PDF (1557 K)

[102] : Author index, Pages I-III
PDF (29 K)

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