Revue : [REVUE434]

Titre : Elsevier Science, Microelectronics Reliability, Volume 43, Issue 8, Pages 1173-1349, August 2003.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.

Volume : 43
Issue : 8
Pages : 1173 - 1349
Date : August 2003

[1] : , Page 1173
G. Ghibaudo and E. Vincent
Lien : vide.pdf - | Full Text + Links | PDF (25 K)

[2] : Critical reliability challenges in scaling SiO2-based dielectric to its
limit, Pages 1175-1184
E. Y. Wu, J. Suñé, W. Lai, A. Vayshenker, E. Nowak and D. Harmon
Lien : vide.pdf - | Full Text + Links | PDF (254 K)

[3] : Statistics of soft and hard breakdown in thin SiO2 gate oxides, Pages
1185-1192
J. Suñé, E. Y. Wu, D. Jiménez and W. L. Lai
Lien : vide.pdf - | Full Text + Links | PDF (188 K)

[4] : Circuit implications of gate oxide breakdown, Pages 1193-1197
J. H. Stathis, R. Rodríguez and B. P. Linder
Lien : vide.pdf - | Full Text + Links | PDF (151 K)

[5] : On the role of holes in oxide breakdown mechanism in inverted nMOSFETs,
Pages : 1199-1202
F. Monsieur, E. Vincent, V. Huard, S. Bruyère, D. Roy, T. Skotnicki, G.
Pananakakis and G. Ghibaudo
Lien : vide.pdf - | Full Text + Links | PDF (133 K)

[6] : Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS
devices observed with C-AFM, Pages 1203-1209
M. Porti, S. Meli, M. Nafría and X. Aymerich
Lien : vide.pdf - | Full Text + Links | PDF (159 K)

[7] : New insights into the change of voltage acceleration and temperature
activation of oxide breakdown, Pages 1211-1214
G. Ribes, S. Bruyère, F. Monsieur, D. Roy and V. Huard
Lien : vide.pdf - | Full Text + Links | PDF (94 K)

[8] : Ramped current stress for fast and reliable wafer level reliability
monitoring of thin gate oxide reliability, Pages 1215-1220
Andreas Martin, Jochen von Hagen and Glenn B. Alers
Lien : vide.pdf - | Full Text + Links | PDF (305 K)

[9] : Impact of gate stack process on conduction and reliability of 0.18 m
PMOSFET, Pages 1221-1227
G. Ghidini, A. Garavaglia, G. Giusto, A. Ghetti, R. Bottini, D.
Peschiaroli, M. Scaravaggi, F. Cazzaniga and D. Ielmini
Lien : vide.pdf - | Full Text + Links | PDF (325 K)

[10] : Anomalous gate oxide conduction on isolation edges: analysis and process
optimization, Pages 1229-1235
A. Ghetti, D. Brazzelli, A. Benvenuti, G. Ghidini and A. Pavan
Lien : vide.pdf - | Full Text + Links | PDF (463 K)

[11] : MIM capacitance variation under electrical stress, Pages 1237-1240
C. Besset, S. Bruyère, S. Blonkowski, S. Crémer and E. Vincent
Lien : vide.pdf - | Full Text + Links | PDF (139 K)

[12] : Carrier injection efficiency for the reliability study of 3.5–1.2 nm thick
gate-oxide CMOS technologies, Pages 1241-1246
A. Bravaix, C. Trapes, D. Goguenheim, N. Revil and E. Vincent
Lien : vide.pdf - | Full Text + Links | PDF (162 K)

[13] : Ionising radiation effects on MOSFET drain current, Pages 1247-1251
S. Cimino, A. Cester, A. Paccagnella and G. Ghidini
Lien : vide.pdf - | Full Text + Links | PDF (150 K)

[14] : Electrical characterization of zirconium silicate films obtained from
novel MOCVD precursors, Pages 1253-1257
Albena Paskaleva, Martin Lemberger, Stefan Zürcher, Anton J. Bauer, Lothar
Frey and Heiner Ryssel
Lien : vide.pdf - | Full Text + Links | PDF (315 K)

[15] : Electrical characterisation and reliability of HfO2 and Al2O3–HfO2 MIM
capacitors, Pages 1259-1266
F. Mondon and S. Blonkowski
Lien : vide.pdf - | Full Text + Links | PDF (282 K)

[16] : Ultra-high-density interconnection technology of three-dimensional
packaging, Pages 1267-1279
Kenji Takahashi, Mitsuo Umemoto, Naotaka Tanaka, Kazumasa Tanida,
Yoshihiko Nemoto, Yoshihiro Tomita, Masamoto Tago and Manabu Bonkohara
Lien : vide.pdf - | Full Text + Links | PDF (711 K)

[17] : Effects of impurity concentration, hydrogen plasma process and
crystallization temperature on poly-crystalline films obtained from PECVD
a-Si:H layers, Pages 1281-1287
R. García, M. Estrada and A. Cerdeira
Lien : vide.pdf - | Full Text + Links | PDF (247 K)

[18] : Electrical characterization of the hafnium oxide prepared by direct
sputtering of Hf in oxygen with rapid thermal annealing, Pages 1289-1293
K. L. Ng, Nian Zhan, C. W. Kok, M. C. Poon and Hei Wong
Lien : vide.pdf - | Full Text + Links | PDF (216 K)

[19] : Anomalous latchup failure induced by on-chip ESD protection circuit in a
high-voltage CMOS IC product, Pages 1295-1301
I-Cheng Lin, Chih-Yao Huang, Chuan-Jane Chao and Ming-Dou Ker
Lien : vide.pdf - | Full Text + Links | PDF (359 K)

[20] : Contact resistance and adhesion performance of ACF interconnections to
aluminum metallization, Pages 1303-1310
J. H. Zhang, Y. C. Chan, M. O. Alam and S. Fu
Lien : vide.pdf - | Full Text + Links | PDF (392 K)

[21] : Investigation of defect on copper bond pad surface in copper/low k process
integration, Pages 1311-1316
Y. S. Zheng, Y. J. Su, B. Yu and P. D. Foo
Lien : vide.pdf - | Full Text + Links | PDF (590 K)

[22] : The influence of Sn–Cu–Ni(Au) and Sn–Au intermetallic compounds on the
solder joint reliability of flip chips on low temperature co-fired ceramic
substrates, Pages 1317-1327
N. Duan, J. Scheer, J. Bielen and M. van Kleef
Lien : vide.pdf - | Full Text + Links | PDF (792 K)

[23] : Comprehensive board-level solder joint reliability modeling and testing of
QFN and PowerQFN packages, Pages 1329-1338
Tong Yan Tee, Hun Shen Ng, Daniel Yap and Zhaowei Zhong
Lien : vide.pdf - | Full Text + Links | PDF (268 K)

[24] : System-on-package: a broad perspective from system design to technology
development, Pages 1339-1348
Li-Rong Zheng and Johan Liu
Lien : vide.pdf - | Full Text + Links | PDF (406 K)

[25] : Erratum to "An algorithm for calculating the lower confidence bounds of
CPU and CPL with application to low-drop-out linear regulators"
[Microelectronics Reliability 2003;43:495–502], Page 1349
W. L. Pearn and Ming-Hung Shu
Lien : vide.pdf - | Full Text + Links | PDF (34 K)

[26] : Calendar of forthcoming events, Pages I-IV
PDF (30 K)

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