Revue : [REVUE377]

Titre : Elsevier Science, Microelectronics Reliability, Volume 42, Issues 9-11, Pages 1249-1822, September - November 2002.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.
Cité dans : [DIV312]  ESREF'2002, 13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, du 7 au 11 octobre 2002, Bellaria, Rimini, Italie.

Volume : 42
Issues : 9-11
Pages : 1249-1822
Date : September - November 2002

[1] : Editorial, Page 1249
Fausto Fantini and Massimo Vanzi
Lien : vide.pdf - | Full Text + Links | PDF (23 K)

[2] : Trend of CMOS downsizing and its reliability, Pages 1251-1258
H. Iwai and S. Ohmi
Lien : vide.pdf - | Full Text + Links | PDF (1164 K)

[3] : The IEEE standards on reliability program and reliability prediction methods for electronic equipment, Pages 1259-1266
Michael Pecht, Diganta Das and Arun Ramakrishnan
Lien : vide.pdf - | Full Text + Links | PDF (1084 K)

[4] : Device Simulation and Backside Laser Interferometry - Powerful Tools for ESD Protection Development, Pages 1267-1274
W. Stadler, K. Esmark, H. Gossner, M. Streibl, M. Wendel, W. Fichtner, D. Pogany, M. Litzenberger and E. Gornik
Lien : vide.pdf - | Full Text + Links | PDF (1545 K)

[5] : Case study of a technology transfer causing ESD problems, Pages 1275-1280
F. Zängl, H. Gossner, K. Esmark, R. Owen and G. Zimmermann
Lien : vide.pdf - | Full Text + Links | PDF (1302 K)

[6] : Experimental and simulation analysis of a BCD ESD protection element under the DC and TLP stress conditions, Pages 1281-1286
M. Blaho, D. Pogany, L. Zullino, A. Andreini and E. Gornik
Lien : vide.pdf - | Full Text + Links | PDF (1334 K)

[7] : The influence of technology variation on ggNMOSTs and SCRs against CDM BSD stress, Pages 1287-1292
M. S. B. Sowariraj, Theo Smedes, Cora Salm, Ton Mouthaan and Fred G Kuper
Lien : vide.pdf - | Full Text + Links | PDF (1138 K)

[8] : Backside Failure Analysis of GaAs ICs after ESD tests, Pages 1293-1298
G. Meneghesso, A. Cocco, G. Mura, S. Podda and M. Vanzi
Lien : vide.pdf - | Full Text + Links | PDF (1473 K)

[9] : Experimental and 3D simulation correlation of a gg-nMOS transistor under
high current pulse, Pages 1299-1302
P. Galy, V. Berland, B. Foucher, A. Guilhaume, J. P. Chante, S. Bardy and F. Blanc
Lien : vide.pdf - | Full Text + Links | PDF (2155 K)

[10] : ESD protection structures for 20 V and 40 V power supply suitable for BCD6
smart power technology, Pages 1303-1306
L. Sponton, L. Cerati, G. Croce, G. Mura, S. Podda, M. Vanzi, G. Meneghesso and E. Zanoni
Lien : vide.pdf - | Full Text + Links | PDF (695 K)

[11] : New qualification approach for optoelectronic components, Pages 1307-1310
J. -L. Goudard, P. Berthier, X. Boddaert, D. Laffitte and J. Périnet
Lien : vide.pdf - | Full Text + Links | PDF (575 K)

[12] : An automated lifetest equipment for optical emitters, Pages 1311-1315
M. Giglio, G. Martines, G. Mura, S. Podda and M. Vanzi
Lien : vide.pdf - | Full Text + Links | PDF (1189 K)

[13] : Reliability tests on WDM filters, Pages 1317-1321
M. Vanzi, G. Salmini, R. Pastorelli, S. Pessina and P. Furcas
Lien : vide.pdf - | Full Text + Links | PDF (620 K)

[14] : Reliability of optical connectors - Humidity behavior of the adhesive,
Pages : 1323-1328
François Caloz, Daniel Ernst, Patrick Rossini, Laura Gherardi, Lisa Grassi and Jean Arnaud
Lien : vide.pdf - | Full Text + Links | PDF (768 K)

[15] : Reliability Problems of Passive Optical Devices and Modules after
Mechanical, Thermal and Humidity Testing, Pages 1329-1332
Klaus Duerr, Reinhard Pusch and Gottfried Schmitt
Lien : vide.pdf - | Full Text + Links | PDF (1055 K)

[16] : Passive optical components: from degradation data to reliability
assessment – preliminary results, Pages 1333-1338
T. Tomasi, I. De Munari, V. Lista, L. Gherardi, A. Righetti and M. Villa
Lien : vide.pdf - | Full Text + Links | PDF (691 K)

[17] : How reliable are reliability tests?, Pages 1339-1345
L. Tielemans, R. Rongen and W. De Ceuninck
Lien : vide.pdf - | Full Text + Links | PDF (875 K)

[18] : True constant temperature MTF test system for the characterization of
electromigration of thick Cu interconnection lines, Pages 1347-1351
G. Scandurra, C. Ciofi, C. Pace, F. Speroni and F. Alagi
Lien : vide.pdf - | Full Text + Links | PDF (962 K)

[19] : Contribution to ageing simulation of complex analogue circuit using
VHDL-AMS behavioural modelling language, Pages 1353-1358
B. Mongellaz, F. Marc, N. Milet-Lewis and Y. Danto
Lien : vide.pdf - | Full Text + Links | PDF (799 K)

[20] : Exploring the limits of Arrhenius-based life testing with heterojunction
bipolar transistor technology, Pages 1359-1363
R. Petersen, W. De Ceuninck, J. D'Haen, M. D'Olieslager, L. De Schepper,
O. Vendier, H. Blanck and D. Pons
Lien : vide.pdf - | Full Text + Links | PDF (633 K)

[21] : Contact resistivity instability in embedded SRAM memory, Pages 1365-1368
A. Mervic, A. Lanzani, M. Menchise, P. Serra and D. Gerosa
Lien : vide.pdf - | Full Text + Links | PDF (602 K)

[22] : Reliability improvement of high value doped polysilicon-based resistors,
Pages : 1369-1372
E. Carvou, F. Le Bihan, A. C. Salaün, R. Rogel, O. Bonnaud, Y. Rey-Tauriac, X. Gagnard and L. Roland
Lien : vide.pdf - | Full Text + Links | PDF (947 K)

[23] : Pseudo Time-Variant parameters in centrifugal compressor availability
studies by means of Markov models, Pages 1373-1376
M. Mugnaini, M. Catelani, G. Ceschini, A. Masi and F. Nocentini
Lien : vide.pdf - | Full Text + Links | PDF (492 K)

[24] : A reliability study for a submarine compression application, Pages
1377-1380
G. Ceschini, M. Mugnaini and A. Masi
Lien : vide.pdf - | Full Text + Links | PDF (518 K)

[25] : A Custom-designed automatic measurement system for acquisition and
management of reliability data, Pages 1381-1384
M. Catelani and R. Nicoletti
Lien : vide.pdf - | Full Text + Links | PDF (425 K)

[26] : A study of advanced layout verification to prevent leakage current failure
during power down mode operation, Pages 1385-1388
Yong-Ha Song, Myoung-Lae Park, Gye-Won Jung and Taek-Soo Kim
Lien : vide.pdf - | Full Text + Links | PDF (579 K)

[27] : Degradation Based Long-Term Reliability Assessment for Electronic
Components in Submarine Applications, Pages 1389-1392
V. Lista, P. Garbossa, T. Tomasi, M. Borgarino, F. Fantini, L. Gherardi,
A. Righetti and M. Villa
Lien : vide.pdf - | Full Text + Links | PDF (585 K)

[28] : On the reliability of instruments for environmental monitoring: some
practical considerations, Pages 1393-1396
P. Battista, M. Catelani, G. Fasano and A. Materassi
Lien : vide.pdf - | Full Text + Links | PDF (892 K)

[29] : Hydrogen-related reliability issues for advanced microelectronics, Pages
1397-1403
D. M. Fleetwood
Lien : vide.pdf - | Full Text + Links | PDF (1236 K)

[30] : Origin of hot carrier degradation in advanced nMOSFET devices, Pages
1405-1408
B. Cretu, F. Balestra, Ghibaudo and G. Guégan
Lien : vide.pdf - | Full Text + Links | PDF (602 K)

[31] : Statistical aspects of the degradation of LDD nMOSFETs, Pages 1409-1413
E. Andries, R. Dreesen, K. Croes, W. De Ceuninck, L. De Schepper, G.
Groeseneken, K. F. Lo, M. D'Olieslaeger and J. D'Haen
Lien : vide.pdf - | Full Text + Links | PDF (552 K)

[32] : Fast temperature cycling and electromigration induced thin film cracking
in multilevel interconnection: experiments and modeling, Pages 1415-1420
H. V. Nguyen, C. Salm, J. Vroemen, J. Voets, B. Krabbenborg, J. Bisschop,
A. J. Mouthaan and F. G. Kuper
Lien : vide.pdf - | Full Text + Links | PDF (1243 K)

[33] : Simulation and experimental characterization of reservoir and via layout
effects on electromigration lifetime, Pages 1421-1425
H. V. Nguyen, C. Salm, R. Wenzel, A. J. Mouthaan and F. G. Kuper
Lien : vide.pdf - | Full Text + Links | PDF (806 K)

[34] : Microscopic aspects of defect generation in SiO2, Pages 1427-1432
Ruggero Feruglio, Fernanda Irrera and Bruno Riccò
Lien : vide.pdf - | Full Text + Links | PDF (834 K)

[35] : Series resistance degradation due to NBTI in PMOSFET, Pages 1433-1438
Mahesh S. Krishnan, Viktor Kol'dyaev, Eiji Morifoji, Koji Miyamoto, Tomasz
Brozek and Xiaolei Li
Lien : vide.pdf - | Full Text + Links | PDF (736 K)

[36] : Negative bias temperature stress on low voltage p-channel DMOS transistors
and the role of nitrogen, Pages 1439-1443
S. Gamerith and M. Pölzl
Lien : vide.pdf - | Full Text + Links | PDF (728 K)

[37] : Analysis of the effect of the gate oxide breakdown on SRAM stability,
Pages : 1445-1448
R. Rodríguez, J. H. Stathis, B. P. Linder, S. Kowalczyk, C. T. Chuang, R.
V. Joshi, G. Northrop, K. Bernstein, A. J. Bhavnagarwala and S. Lombardo
Lien : vide.pdf - | Full Text + Links | PDF (559 K)

[38] : Comprehensive failure analysis of leakage faults in bipolar transistors,
Pages : 1449-1452
B. Domengès, P. Schwindenhammer, P. Poirier, F. Beaudoin and Ph. Descamps
Lien : vide.pdf - | Full Text + Links | PDF (1241 K)

[39] : Inversion of degradation direction of n-channel MOS-FETs in off-state
operation, Pages 1453-1456
A. Muehlhoff
Lien : vide.pdf - | Full Text + Links | PDF (797 K)

[40] : Simulative prediction of the resistance change due to electromigration
induced void evolution, Pages 1457-1460
Hajdin Ceric and Siegfried Selberherr
Lien : vide.pdf - | Full Text + Links | PDF (757 K)

[41] : Charge trapping and degradation in Ge+ ion implanted SiO2 layers during
high-field electron injection, Pages 1461-1464
A. N. Nazarov, I. N. Osiyuk, V. S. Lysenko, T. Gebel, L. Rebohle and W. Skorupa
Lien : vide.pdf - | Full Text + Links | PDF (712 K)

[42] : Mechanisms of spontaneous recovery in positive gate bias stressed power
VDMOSFETs, Pages 1465-1468
N. Stojadinovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, D. Dankovic,
S. Golubovic and S. Dimitrijev
Lien : vide.pdf - | Full Text + Links | PDF (813 K)

[43] : Simulation of failure time distributions of metal lines under
electromigration, Pages 1469-1472
M. R. Carriero, S. Di Pascoli and G. Iannaccone
Lien : vide.pdf - | Full Text + Links | PDF (650 K)

[44] : Evaluation methodology of thin dielectrics for non-volatile memory
application, Pages 1473-1480
G. Ghidini and D. Brazzelli
Lien : vide.pdf - | Full Text + Links | PDF (2141 K)

[45] : Dependence of Post-Breakdown Conduction on Gate Oxide Thickness, Pages
1481-1484
S. Lombardo, J. H. Stathis and B. P. Linder
Lien : vide.pdf - | Full Text + Links | PDF (716 K)

[46] : High-resolution SILC measurements of thin SiO2 at ultra low voltages,
Pages : 1485-1489
S. Aresu, W. De Ceuninck, R. Dreesen, K. Croes, E. Andries, J. Manca, L.
De Schepper, R. Degraeve, B. Kaczer, M. D'Olieslaeger and J. D'Haen
Lien : vide.pdf - | Full Text + Links | PDF (918 K)

[47] : Post-breakdown characterization in thin gate oxides, Pages 1491-1496
E. Viganò, A. Ghetti, G. Ghidini and A. S. Spinelli
Lien : vide.pdf - | Full Text + Links | PDF (793 K)

[48] : Series resistance and oxide thickness spread influence on Weibull
breakdown distribution: New experimental correction for reliability
projection improvement, Pages 1497-1500
D. Roy, S. Bruyere, E. Vincent and F. Monsieur
Lien : vide.pdf - | Full Text + Links | PDF (1864 K)

[49] : Electrical characteristics of high-energy proton irradiated ultra-thin
gate oxides, Pages 1501-1504
J. M. Rafí, B. Vergnet, F. Campabadal, C. Fleta, L. Fonseca, M. Lozano, C.
Martínez and M. Ullán
Lien : vide.pdf - | Full Text + Links | PDF (665 K)

[50] : Gate oxide Reliability assessment optimization, Pages 1505-1508
F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis and G.
Ghibaudo
Lien : vide.pdf - | Full Text + Links | PDF (753 K)

[51] : Analyses on NVM Circuitry Delay Induced by Source & Drain BF2 Implant,
Pages : 1509-1511
P. Caprara, A. Barcella, M. Beltramello, C. Brambilla, S. Cereda, C.
Caimi, V. Contin, V. Daniele, M. Fontana, P. Lucarno et al.
Lien : vide.pdf - | Full Text + Links | PDF (607 K)

[52] : Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2
Gate Oxide on MOS Structures, Pages 1513-1516
X. Blasco, M. Nafría and X. Aymerich
Lien : vide.pdf - | Full Text + Links | PDF (759 K)

[53] : Acoustic analysis of an assembly: Structural identification by signal
processing (wavelets), Pages 1517-1522
J. Augereau, Y.Ousten, L. Béchou and Y. Danto
Lien : vide.pdf - | Full Text + Links | PDF (1422 K)

[54] : Reliability of Au/Al bonding in plastic packages for high temperature (200°C) and high current applications, Pages : 1523-1528
C. Passagrilli, L. Gobbato and R. Tiziani
Lien : vide.pdf - | Full Text + Links | PDF (2860 K)

[55] : Reliability study of the assembly of a large EGA on a build up board using thermo-mechanical simulations, Pages 1529-1533
P. Guilbault, E. Woirgard, C. Zardini and D. Lambert
Lien : vide.pdf - | Full Text + Links | PDF (1455 K)

  [1] :  [ART569]  P. GUILBAULT, E. WOIRGARD, C. ZARDINI, D. LAMBERT, Reliability study of the assembly of a large BGA on a build up board using thermo-mechanical simulations, Microelectronics Reliability, Sept.-Nov. 2002, Vol.42, No. 9-11, pp. 1529-1533.

[56] : Reliability of Wire Bonding on Low-k Dielectric Material in Damascene Copper Integrated Circuits PBGA Assembly, Pages 1535-1540
Mohandass Sivakumar, Vaidyanathan Kripesh, Chong Ser Choong, Chai Tai
Chong and Loon Aik Lim
Lien : vide.pdf - | Full Text + Links | PDF (1756 K)

[57] : Reliability of Flip Chip Applications with Ceramic and Organic Chip
Carriers, Pages 1541-1546
Giulio Di Giacomo and Stefano Oggioni
Lien : vide.pdf - | Full Text + Links | PDF (1512 K)

[58] : Failure mechanisms of adhesive flip chip joints, Pages 1547-1550
A. Seppälä, T. Allinniemi and E. Ristolainen
Lien : vide.pdf - | Full Text + Links | PDF (1787 K)

[59] : Evaluation of a micropackaging analysis technique by highfrequency
microwaves, Pages 1551-1554
G. Duchamp, Y. Ousten and Y. Danto
Lien : vide.pdf - | Full Text + Links | PDF (1115 K)

[60] : Evaluation of lead-free soldering for automotive applications, Pages 1555-1558
Alexandrine Guédon, Eric Woirgard and Christian Zardini
Lien : vide.pdf - | Full Text + Links | PDF (958 K)

  [1] :  [ART331]  A. GUEDON, E. WOIRGARD, C. ZARDINI, Evaluation of lead - free soldering for automotive applications, Microelectronics Reliability, Volume 42, Issues 9-11, September-November 2002, pp. 1555-1558.

[62] : Reliability investigations on HBV using pulsed electrical stress, Pages
1563-1568
C. Sydlo, M. Saglam, B. Mottet, M. Rodríguez-Gironés and H. L. Hartnagel
Lien : vide.pdf - | Full Text + Links | PDF (1226 K)

[63] : Reliability of Metamorphic HEMTs for Power Applications, Pages 1569-1573
M. Dammann, F. Benkhelifa, M. Meng and W. Jantz
Lien : vide.pdf - | Full Text + Links | PDF (1178 K)

[64] : Degradation mechanisms induced by thermal and bias stresses in InP HEMTs,
Pages : 1575-1580
N. Labat, N. Malbert, B. Lambert, A. Touboul, F. Garat and B. Proust
Lien : vide.pdf - | Full Text + Links | PDF (1005 K)

[65] : Backside Defect Localizations and Revelations Techniques on Gallium
Arsenide (GaAs) Devices, Pages 1581-1585
F. Beaudoin, D. Carisetti, R. Desplats, P. Perdu, D. Lewis and J. C.
Clement
Lien : vide.pdf - | Full Text + Links | PDF (4046 K)

[66] : High-field step-stress and long term stability of PHEMTs with different
gate and recess lengths, Pages 1587-1592
P. Cova, R. Menozzi, M. Dammann, T. Feltgen and W. Jantz
Lien : vide.pdf - | Full Text + Links | PDF (897 K)

[67] : Process Control and Failure Analysis Implementation for THz Schottky-based
components, Pages 1593-1596
V. Ichizli, M. Rodríguez-Gironés, L. Marchand, C. Garden, O. Cojocari, B.
Mottet and H. L. Hartnagel
Lien : vide.pdf - | Full Text + Links | PDF (1490 K)

[68] : Reliable power electronics for automotive applications, Pages 1597-1604
N. Seliger, E. Wolfgang, G. Lefranc, H. Berg and T. Licht
Lien : vide.pdf - | Full Text + Links | PDF (2475 K)

[69] : Reliability analysis of power MOSFET's with the help of compact models and
circuit simulation, Pages 1605-1610
A. Castellazzi, R. Kraus, N. Seliger and D. Schmitt-Landsiedel
Lien : vide.pdf - | Full Text + Links | PDF (820 K)

[70] : Adhesive die attach for power application: Performance and reliability in
plastic package, Pages 1611-1616
R. Tiziani, G. Passoni and G. Santospirito
Lien : vide.pdf - | Full Text + Links | PDF (1235 K)

[71] : Fast thermal fatigue on top metal layer of power devices, Pages 1617-1622
Sebastiano Russo, Romeo Letor, Orazio Viscuso, Lucia Torrisi and Gianluigi
Vitali
Lien : vide.pdf - | Full Text + Links | PDF (2241 K)

[72] : Reliability of power transistors against application driven temperature
swings, Pages 1623-1628
Sudha Gopalan, Benno Krabbenborg, Jan-Hein Egbers, Bart van Velzen and
Rene Zingg
Lien : vide.pdf - | Full Text + Links | PDF (2481 K)

[73] : The Reliability of New Generation Power MOSFETs in Radiation Environment,
Pages : 1629-1634
F. Velardi, F. Iannuzzo, G. Busatto, J. Wyss and A. Kaminksy
Lien : vide.pdf - | Full Text + Links | PDF (1026 K)

[74] : Non-destructive high temperature characterisation of high-voltage IGBTs,
Pages : 1635-1640
G. Busatto, B. Cascone, L. Fratelli, M. Balsamo, F. Iannuzzo and F.
Velardi
Lien : vide.pdf - | Full Text + Links | PDF (1861 K)

[75] : Properties of solders and their fatigue in power modules, Pages 1641-1646
G. Lefranc, T. Licht and G. Mitic
Lien : vide.pdf - | Full Text + Links | PDF (1606 K)

[76] : Characterization of Trench MOS Gate Structures Utilizing Photon Emission
Microscopy, Pages 1647-1652
Masanori Usui, Takahide Sugiyama, Masayasu Ishiko, Jun Morimoto, Hirokazu
Saitoh and Masaki Ajioka
Lien : vide.pdf - | Full Text + Links | PDF (2026 K)

[77] : A Novel Thermomechanics -Based Lifetime Prediction Model for Cycle Fatigue
Failure Mechanisms in Power Semiconductors, Pages 1653-1658
M. Ciappa, F. Carbognani, P. Cova and W. Fichtner
Lien : vide.pdf - | Full Text + Links | PDF (1300 K)

[78] : Growth process and chemical characterization of an ultrathin phosphate
film grafted onto Al-alloy metallization surfaces relevant to
microelectronic devices reliability, Pages 1659-1662
G. Curro, R. Greco and A. Scandurra
Lien : vide.pdf - | Full Text + Links | PDF (894 K)

[79] : Influence of the turn-on mechanism on TRIACs' reliability: di/dt thermal fatigue study in Q1 compared to Q2, Pages 1663-1666
S. Moreau, S. Forster, T. Lequeu and R. Jérisian
Lien : private/MOREAU2.pdf - | Full Text + Links | PDF (1334 K)

  [1] :  [ART303]  S. MOREAU, S. FORSTER, T. LEQUEU, R. JERISIAN, Influence of the turn-on mechanism on TRIACs' reliability: di/dt thermal fatigue study in Q1 compared to Q2, Microelectronics Reliability, Volume 42, Issues 9-10, September - October 2002, pp. 1663-1666.

[80] : Imaging and Material Analysis from Sputter-Induced Light Emission Using
Coaxial Ion-Photon Column, Pages 1667-1672
Chun-Cheng Tsao, Bill Thompson and Ted Lundquist
Lien : vide.pdf - | Full Text + Links | PDF (3127 K)

[81] : Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using
backside infrared OBIC technique., Pages 1673-1677
D. Pogany, J. Kuzmik, J. Darmo, M. Litzenberger, S. Bychikhin, K.
Unterrainer, Z. Mozolova, S. Hascik, T. Lalinsky and E. Gornik
Lien : vide.pdf - | Full Text + Links | PDF (946 K)

[82] : CAD navigation system, for backside waveform probing of CMOS devices,
Pages : 1679-1684
Katsuyoshi Miura, Koji Nakamae and Hiromu Fujioka
Lien : vide.pdf - | Full Text + Links | PDF (1666 K)

[83] : Double-cantilever device for Atomic Force Microscopy in dynamic
noncontact-mode, Pages 1685-1688
A. -D. Müller, F. Müller, J. Middeke, J. Mehner, J. Wibbeler, Th. Gessner
and M. Hietschold
Lien : vide.pdf - | Full Text + Links | PDF (1561 K)

[84] : Optical diagnosis of excess IDDQ in low power CMOS circuits, Pages
1689-1694
Franco Stellari, Peilin Song, James C. Tsang, Moyra K. McManus and Mark B.
Ketchen
Lien : vide.pdf - | Full Text + Links | PDF (1379 K)

[85] : Contactless current and voltage measurements in integrated circuits by
using a needle sensor, Pages 1695-1700
M. Neinhüs, R. Weber, U. Behnke, W. Merlin, E. Kubalek, R. A. Breil, M.
Detje and A. Feltz
Lien : vide.pdf - | Full Text + Links | PDF (1333 K)

[86] : Simulation and Experimental Validation of Scanning Capacitance Microscopy
Measurements across Low-doped Epitaxial PN-Junction, Pages 1701-1706
M. Stangoni, M. Ciappa, M. Buzzo, M. Leicht and W. Fichtner
Lien : vide.pdf - | Full Text + Links | PDF (1580 K)

[87] : Investigation of Sensitivity Improvement on Passive Voltage Contrast for
Defect Isolation, Pages 1707-1710
Jon C. Lee, C. H. Chen, David Su and J. H. Chuang
Lien : vide.pdf - | Full Text + Links | PDF (1144 K)

[88] : Investigation of Tunnel-Regenerated Multi-Active-Region Light-Emitting
Diodes (TRMAR LED) by Scanning Thermal Microscopy (STHM), Pages 1711-1714
T. H. Lee, X. Guo, G. D. Shen, Y. Ji, G. H. Wang, J. Y. Du, X. Z. Wang, G.
Gao, A. Altes, L. J. Balk and J. C. H. Phang
Lien : vide.pdf - | Full Text + Links | PDF (1614 K)

[89] : A specimen-current branching approach for FA of long Electromigration test
lines, Pages 1715-1718
C. Caprile, I. De Munari, M. Improntac, S. Podda, A. Scorzoni and M. Vanzi
Lien : vide.pdf - | Full Text + Links | PDF (1186 K)

[90] : Scanning Thermal Microscopy in Microsystem Reliability Analysis, Pages
1719-1722
R. F. Szeloch, T. P. Gotszalk and P. Janus
Lien : vide.pdf - | Full Text + Links | PDF (1945 K)

[91] : Electrical characteristics measurement of transistors by 4 tips-0.2 micron
probing technique in Semiconductor Failure Analysis, Pages 1723-1727
C. Giret, D. Bru, D. Faure, C. Ali, M. Razani and D. Gobled
Lien : vide.pdf - | Full Text + Links | PDF (2929 K)

[92] : Reliability Defect Monitoring with Thermal Laser Stimulation: Biased
Versus Unbiased, Pages 1729-1734
F. Beaudoin, G. Haller, P. Perdu, R. Desplats, T. Beauchêne and D. Lewis
Lien : vide.pdf - | Full Text + Links | PDF (3267 K)

[93] : Application of Acoustic Frequency Domain Imaging for the Evaluation of
Advanced Micro Electronic Packages, Pages 1735-1740
Janet E. Semmens and Lawrence W. Kessler
Lien : vide.pdf - | Full Text + Links | PDF (4916 K)

[94] : Backside Hot Spot Detection Using Liquid Crystal Microscopy, Pages
1741-1746
O. Crepel, F. Beaudoin, L. Dantas de Morais, G. Haller, C, Goupil, P.
Perdu, R. Desplats and D. Lewis
Lien : vide.pdf - | Full Text + Links | PDF (2744 K)

[95] : Lift-out techniques coupled with advanced TEM characterization methods for
electrical failure analysis, Pages 1747-1752
N. Bicaïis-Lépinay, F. André, R. Pantel, S. Jullian, A. Margain and L. F.
Tz. Kwakman
Lien : vide.pdf - | Full Text + Links | PDF (3466 K)

[96] : Novel FIB-based sample preparation technique for TEM analysis of
ultra-thin gate oxide breakdown, Pages 1753-1757
Joachim C. Reiner, Philippe Gasser and Urs Sennhauser
Lien : vide.pdf - | Full Text + Links | PDF (1591 K)

[97] : Simultaneous IC-internal voltage and current measurements via a multi
lever Scanning Force Microscope, Pages 1759-1762
C. Hartmann, R. Weber, W. Mertin, E. Kubalek, A. -D. Müller and M.
Hietschold
Lien : vide.pdf - | Full Text + Links | PDF (1614 K)

[98] : Magnetic field measurements for Non Destructive Failure Analysis, Pages
1763-1766
O. Crépel, C. Goupil, B. Domengès, P. Descamps, P. Perdu and A. Doukkali
Lien : vide.pdf - | Full Text + Links | PDF (695 K)

[99] : A New sub-micro probing technique for failure analysis in integrated
circuits, Pages 1767-1770
D. Faure and C. A. Waggoner
Lien : vide.pdf - | Full Text + Links | PDF (1651 K)

[100] : Reliability of MEMS - a methodical approach, Pages 1771-1776
R. Müller-Fiedler, U. Wagner and W. Bernhard
Lien : vide.pdf - | Full Text + Links | PDF (2758 K)

[101] : Reliability analysis of CMOS MEMS structures obtained by Front Side Bulk
Micromachining, Pages 1777-1782
M. Dardalhon, V. Beroulle, L. Latorre, P. Nouet, G. Perez, J. M. Nicot and
C. Oudea
Lien : vide.pdf - | Full Text + Links | PDF (1538 K)

[102] : Mechanical Reliability of Silicon Wafers with Through-Wafer Vias for
Wafer-Level Packaging, Pages 1783-1788
A. Polyakov, M. Bartek and J. N. Burghartz
Lien : vide.pdf - | Full Text + Links | PDF (1757 K)

[103] : Techniques to study the reliability of metal RF MEMS capacitive switches,
Pages : 1789-1794
I. De Wolf and W. M. van Spengen
Lien : vide.pdf - | Full Text + Links | PDF (3242 K)

[104] : Reliability of polysilicon microstructures: in situ test benches, Pages
1795-1800
Olivier Millet, Dominique Collard and Lionel Buchaillot
Lien : vide.pdf - | Full Text + Links | PDF (2377 K)

[105] : Yield Evaluation of Gold Sensor Electrodes Used for Fully Electronic DNA Detection Arrays on CMOS, Pages 1801-1806
A. Frey, F. Hofmann, R. Peters, B. Holzapfl, M. Schienle, C. Paulus, P.
Schindler-Bauer, D. Kuhlmeier, J. Krause, G. Eckstein and R. Thewes
Lien : vide.pdf - | Full Text + Links | PDF (2399 K)

[106] : Analysis of etched cantilevers, Pages 1807-1809
A. Enzler, N. Herres and A. Dommann
Lien : vide.pdf - | Full Text + Links | PDF (1433 K)

[107] : Simulated SAM A-scans on multilayer MEMS components, Pages 1811-1814
Jakob Janting, Dirch Hjorth Petersen and Christoffer Greisen
Lien : vide.pdf - | Full Text + Links | PDF (974 K)

[108] : IR confocal laser microscopy for MEMS Technological Evaluation, Pages 1815-1817
D. Lellouchi, F. Beaudoin, C. Le Touze, P. Perdu and R. Desplats
Lien : vide.pdf - | Full Text + Links | PDF (1810 K)

[109] : Investigation of dynamic disturbance quantities in piezoresistive silicon sensors, Pages 1819-1822
Phan L. P. Hoa, G. Suchaneck and G. Gerlach
Lien : vide.pdf - | Full Text + Links | PDF (718 K)

[110] : Author index, Pages I-III
Lien : vide.pdf - | Full Text + Links | PDF (30 K)

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