Revue : [REVUE255]

Titre : Elsevier Science, Microelectronics Reliability, Volume 41, Issue 7, Pages 933-1100, July 2001.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.

Volume : 41
Issue : 7
Pages : 933 - 1100
Date : July 2001

[1] : In memory of Pierre Rossel, Pages 933-934
Georges Charitat
Lien : vide.pdf - | Article | Journal Format-PDF (65 K)

[2] : , Page 935
Andreas Martin
Lien : vide.pdf - | Article | Journal Format-PDF (27 K)

[3] : Chemical and physical limits on the performance of metal silicate high-k
gate dielectrics, Pages 937-945
G. Lucovsky, G. B. Rayner and R. S. Johnson
Lien : vide.pdf - | Article | Journal Format-PDF (554 K)

[4] : FeRAM technology for high density applications, Pages 947-950
T. Mikolajick, C. Dehm, W. Hartner, I. Kasko, M. J. Kastner, N. Nagel, M.
Moert and C. Mazure
Lien : vide.pdf - | Article | Journal Format-PDF (269 K)

[5] : Direct tunnelling models for circuit simulation, Pages 951-957
P. O'Sullivan, R. Clerc, K. G. McCarthy, A. Mathewson and G. Ghibaudo
Lien : vide.pdf - | Article | Journal Format-PDF (158 K)

[6] : Plasma charging damage mechanisms and impact on new technologies, Pages
959-965
G. Reimbold and T. Poiroux
Lien : vide.pdf - | Article | Journal Format-PDF (204 K)

[7] : Dielectric breakdown distributions for void containing silicon substrates,
Pages : 967-971
R. Falster, F. Bonoli and V. V. Voronkov
Lien : vide.pdf - | Article | Journal Format-PDF (122 K)

[8] : The influence of p-polysilicon gate doping on the dielectric breakdown of
PMOS devices, Pages 973-975
G. Innertsberger, T. Pompl and M. Kerber
Lien : vide.pdf - | Article | Journal Format-PDF (129 K)

[9] : Nitrogen implantations for rapid thermal oxinitride layers, Pages 977-980
A. Stadler, I. Genchev, A. Bergmaier, G. Dollinger, V. Petrova-Koch, W.
Hansch, H. Baumgärtner and I. Eisele
Lien : vide.pdf - | Article | Journal Format-PDF (532 K)

[10] : Reduction of boron penetration through thin silicon oxide with a nitrogen
doped silicon layer, Pages 981-985
L. Jalabert, P. Temple-Boyer, G. Sarrabayrouse, F. Cristiano, B.
Colombeau, F. Voillot and C. Armand
Lien : vide.pdf - | Article | Journal Format-PDF (267 K)

[11] : Electrical reliability aspects of through the gate implanted MOS
structures with thin oxides, Pages 987-990
M. P. M. Jank, M. Lemberger, A. J. Bauer, L. Frey and H. Ryssel
Lien : vide.pdf - | Article | Journal Format-PDF (234 K)

[12] : Epitaxial, high-K dielectrics on silicon: the example of praseodymium
oxide, Pages 991-994
H. J. Osten, J. P. Liu, H. -J. Müssig and P. Zaumseil
Lien : vide.pdf - | Article | Journal Format-PDF (188 K)

[13] : In situ crystallisation in ZrO2 thin films during high temperature X-ray
diffraction, Pages 995-998
C. Zhao, G. Roebben, H. Bender, E. Young, S. Haukka, M. Houssa, M. Naili,
S. De Gendt, M. Heyns and O. Van Der Biest
Lien : vide.pdf - | Article | Journal Format-PDF (371 K)

[14] : Impact of the As dose in 0.35 m EEPROM technology: characterization and
modeling, Pages 999-1002
N. Galbiati, G. Ghidini, C. Cremonesi and L. Larcher
Lien : vide.pdf - | Article | Journal Format-PDF (271 K)

[15] : Optimization of WSi2 by SiH4 CVD: impact on oxide quality, Pages 1003-1006
D. Brazzelli, G. Ghidini and C. Riva
Lien : vide.pdf - | Article | Journal Format-PDF (133 K)

[16] : Ultra-thick gate oxides: charge generation and its impact on reliability,
Pages : 1007-1010
Udo Schwalke, Martin Pölzl, Thomas Sekinger and Martin Kerber
Lien : vide.pdf - | Article | Journal Format-PDF (235 K)

[17] : Influence of a low field with opposite polarity to the stress on the
degradation of 4.5 nm thick SiO2 films, Pages 1011-1013
R. Rodríguez, M. Porti, M. Nafría and X. Aymerich
Lien : vide.pdf - | Article | Journal Format-PDF (128 K)

[18] : The electron irradiation effects on silicon gate dioxide used for power
MOS devices, Pages 1015-1018
M. Badila, Ph. Godignon, J. Millan, S. Berberich and G. Brezeanu
Lien : vide.pdf - | Article | Journal Format-PDF (129 K)

[19] : Quality assessment of thin oxides using constant and ramped stress
measurements, Pages 1019-1022
Gunnar Diestel, Andreas Martin, Martin Kerber, Alfred Schlemm, Horst
Erlenmaier, Bernhard Murr and Andreas Preussger
Lien : vide.pdf - | Article | Journal Format-PDF (349 K)

[20] : High field stress at and above room temperature in 2.3 nm thick oxides,
Pages : 1023-1026
D. Zander, C. Petit, F. Saigne and A. Meinertzhagen
Lien : vide.pdf - | Article | Journal Format-PDF (240 K)

[21] : Electrical characterization and quantum modeling of MOS capacitors with
ultra-thin oxides (1.4¯3 nm), Pages 1027-1030
R. Clerc, A. S. Spinelli, G. Ghibaudo, C. Leroux and G. Pananakakis
Lien : vide.pdf - | Article | Journal Format-PDF (269 K)

[22] : Body effect induced wear-out acceleration in ultra-thin oxides, Pages
1031-1034
S. Bruyère, D. Roy, E. Robilliart, E. Vincent and G. Ghibaudo
Lien : vide.pdf - | Article | Journal Format-PDF (371 K)

[23] : Wear-out, breakdown occurrence and failure detection in 18¯25 Å ultrathin
oxides, Pages 1035-1039
F. Monsieur, E. Vincent, G. Pananakakis and G. Ghibaudo
Lien : vide.pdf - | Article | Journal Format-PDF (363 K)

[24] : Local current fluctuations before and after breakdown of thin SiO2 films
observed with conductive atomic force microscope, Pages 1041-1044
M. Porti, X. Blasco, M. Nafría, X. Aymerich, A. Olbrich and B. Ebersberger
Lien : vide.pdf - | Article | Journal Format-PDF (142 K)

[25] : Sub-100 nm CMOS circuit performance with high-K gate dielectrics, Pages
1045-1048
N. R. Mohapatra, A. Dutta, G. Sridhar, M. P. Desai and V. R. Rao
Lien : vide.pdf - | Article | Journal Format-PDF (141 K)

[26] : Multi-frequency transconductance technique for interface characterization
of deep sub-micron SOI¯MOSFETs, Pages 1049-1051
A. Kumar, S. Mahapatra, R. Lal and V. R. Rao
Lien : vide.pdf - | Article | Journal Format-PDF (189 K)

[27] : Flat band voltage shift and oxide properties after rapid thermal
annealing, Pages 1053-1056
B. J. O'Sullivan, P. K. Hurley, F. N. Cubaynes, P. A. Stolk and F. P.
Widdershoven
Lien : vide.pdf - | Article | Journal Format-PDF (175 K)

[28] : Optical and electrical characterization of the electron beam gun
evaporated TiO2 film, Pages 1057-1061
V. Mikhelashvili and G. Eisenstein
Lien : vide.pdf - | Article | Journal Format-PDF (149 K)

[29] : Ultra-thin oxides on silicon fabricated using ultra-slow multicharged ion
beams, Pages 1063-1066
G. Borsoni, N. Béchu, M. Gros-Jean, M. L. Korwin-Pawlowski, R. Laffitte,
V. Le Roux, L. Vallier, N. Rochat and C. Wyon
Lien : vide.pdf - | Article | Journal Format-PDF (148 K)

[30] : On the influence of the variation of measurement conditions on the FNT
characteristics of stressed thin silicon oxides, Pages 1067-1069
J. -W. Zahlmann-Nowitzki, L. Nebrich and P. Seegebrecht
Lien : vide.pdf - | Article | Journal Format-PDF (225 K)

[31] : Threshold energies in the light emission characteristics of silicon MOS
tunnel diodes, Pages 1071-1076
N. Asli, M. I. Vexler, A. F. Shulekin, P. D. Yoder, I. V. Grekhov and P.
Seegebrecht
Lien : vide.pdf - | Article | Journal Format-PDF (428 K)

[32] : Characterising the surface roughness of AFM grown SiO2 on Si, Pages
1077-1079
D. Hill, X. Blasco, M. Porti, M. Nafría and X. Aymerich
Lien : vide.pdf - | Article | Journal Format-PDF (256 K)

[33] : Impact of substituting SiO2 ILD by low k materials into AlCu RIE
metallization, Pages 1081-1083
D. Weber, F. Höhnsdorf, A. Hausmann, A. Klipp, Z. Stavreva, J. Herrmann,
L. Bauch, M. Junack, H. Neef, M. Nichterwitz, S. Finsterbusch, R.
Liebmann, N. Kallis and A. Kieslich
Lien : vide.pdf - | Article | Journal Format-PDF (151 K)

[34] : Suppression of boron penetration through thin gate oxides by nitrogen
implantation into the gate electrode in PMOS devices, Pages 1085-1088
S. Strobel, A. J. Bauer, M. Beichele and H. Ryssel
Lien : vide.pdf - | Article | Journal Format-PDF (546 K)

[35] : Reliability of ultrathin nitrided oxides grown in low pressure N2O
ambient, Pages 1089-1092
M. Beichele, A. J. Bauer and H. Ryssel
Lien : vide.pdf - | Article | Journal Format-PDF (260 K)

[36] : Pseudopotential study of PrO2 and HfO2 in fluorite phase, Pages 1093-1096
J. Dbrowski, V. Zavodinsky and A. Fleszar
Lien : vide.pdf - | Article | Journal Format-PDF (470 K)

[37] : Oxide reliability: influence of interface roughness, structure layout, and
depletion layer formation, Pages 1097-1100
B. Lanchava, P. Baumgartner, A. Martin, A. Beyer and E. Mueller
Lien : vide.pdf - | Article | Journal Format-PDF (97 K)
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