Revue : [REVUE256]

Titre : Elsevier Science, Microelectronics Reliability, Volume 41, Issue 8, Pages 1101-1272, August 2001.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.

Volume : 41
Issue : 8
Pages : 1101 - 1272
Date : August 2001

[1] : Editorial, Page 1101
Wallace T. Anderson and Roberto Menozzi
Lien : vide.pdf - | Article | Journal Format-PDF (30 K)

[2] : Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined
temperature and current stressing, Pages 1103-1108
Joachim Würfl, Paul Kurpas, Frank Brunner, Michael Mai, Matthias Rudolph
and Markus Weyers
Lien : vide.pdf - | Article | Journal Format-PDF (715 K)

[3] : Pseudomorphic high electron mobility transistor monolithic microwave
integrated circuits reliability study, Pages 1109-1113
W. T. Anderson, J. A. Roussos, J. A. Mittereder, D. E. Ioannou and C.
Moglestue
Lien : vide.pdf - | Article | Journal Format-PDF (488 K)

[4] : Ka-band InP high electron mobility transistor monolithic microwave
integrated circuit reliability, Pages 1115-1122
B. M. Paine, R. C. Wong, A. E. Schmitz, R. H. Walden, L. D. Nguyen, M. J.
Delaney and K. C. Hum
Lien : vide.pdf - | Article | Journal Format-PDF (302 K)

[5] : Volume : impacts on GaAs reliability improvement, Pages 1123-1127
William J. Roesch
Lien : vide.pdf - | Article | Journal Format-PDF (345 K)

[6] : RF modeling approach to determining end-of-life reliability for InP-based
HBTs, Pages 1129-1135
S. Thomas III, C. H. Fields and M. Madhav
Lien : vide.pdf - | Article | Journal Format-PDF (254 K)

[7] : Location of defective cells in HBT power amplifier arrays using IR
emission microscopy, Pages 1137-1141
Peter Dai and Philip Canfield
Lien : vide.pdf - | Article | Journal Format-PDF (391 K)

[8] : , Pages 1143-1144
Daniel L. Barton, Shigeru Nakajima and Massimo Vanzi
Lien : vide.pdf - | Article | Journal Format-PDF (27 K)

[9] : Global fault localization using induced voltage alteration, Pages
1145-1159
Edward I. Cole Jr
Lien : vide.pdf - | Article | Journal Format-PDF (1248 K)

[10] : Spectroscopic photon emission microscopy: a unique tool for failure
analysis of microelectronics devices, Pages 1161-1169
Ingrid De Wolf and Mahmoud Rasras
Lien : vide.pdf - | Article | Journal Format-PDF (1967 K)

[11] : Developments of new concept analytical instruments for failure analyses of
sub-100 nm devices, Pages 1171-1183
Yasuhiro Mitsui, Fumiko Yano, Hiroshi Kakibayashi, Hiroyasu Shichi and
Takashi Aoyama
Lien : vide.pdf - | Article | Journal Format-PDF (2599 K)

[12] : Electrical probing of deep sub-micron integrated circuits using scanning
probes, Pages 1185-1191
K. Krieg, D. J. Thomson and G. E. Bridges
Lien : vide.pdf - | Article | Journal Format-PDF (659 K)

[13] : Failure analysis from the back side of a die, Pages 1193-1201
Silke Liebert
Lien : vide.pdf - | Article | Journal Format-PDF (845 K)

[14] : Observation of the internal waveforms in high-speed high-density LSIs
using an EOS prober, Pages 1203-1209
Chisato Hashimoto, Takamitsu Takizawa, Sigeru Nakajima, Mitsuru Shinagawa
and Tadao Nagatsuma
Lien : vide.pdf - | Article | Journal Format-PDF (250 K)

[15] : Scanning SQUID microscopy for current imaging, Pages 1211-1229
L. A. Knauss, A. B. Cawthorne, N. Lettsome, S. Kelly, S. Chatraphorn, E.
F. Fleet, F. C. Wellstood and W. E. Vanderlinde
Lien : vide.pdf - | Article | Journal Format-PDF (2345 K)

[16] : Scanning probe microscopy in semiconductor failure analysis, Pages
1231-1236
B. Ebersberger, A. Olbrich and C. Boit
Lien : vide.pdf - | Article | Journal Format-PDF (501 K)

[17] : Single contact optical beam induced currents, Pages 1237-1242
J. M. Chin, J. C. H. Phang, D. S. H. Chan, M. Palaniappan, G. Gilfeather
and C. E. Soh
Lien : vide.pdf - | Article | Journal Format-PDF (488 K)

[18] : Locally delineating of junctions and defects by local cross-section
electron-beam-induced-current technique, Pages 1243-1253
T. Koyama, M. Umeno, K. Sonoda, J. Komori and Y. Mashiko
Lien : vide.pdf - | Article | Journal Format-PDF (3002 K)

[19] : Scanning thermal microscopy studies of local temperature distribution of
micron-sized metallization lines, Pages 1255-1258
Yuan Ji, Ziguo Li, Dong Wang, Yaohai Cheng, Dong Luo and Bin Zong
Lien : vide.pdf - | Article | Journal Format-PDF (275 K)

[20] : Mechanism of pre-annealing effect on electromigration immunity of Al¯Cu
line, Pages 1259-1264
M. K. Mazumder, S. Yamamoto, H. Maeda, J. Komori and Y. Mashiko
Lien : vide.pdf - | Article | Journal Format-PDF (1057 K)

[21] : Electromigration and electrochemical reaction mixed failure mechanism in
gold interconnection system, Pages 1265-1272
Hide Murayama, Makoto Yamazaki and Shigeru Nakajima
Lien : vide.pdf - | Article | Journal Format-PDF (1489 K)

[22] : Calendar, Pages I-V
Journal Format-PDF (30 K)
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