Revue : [REVUE241]

Titre : Elsevier Science, Microelectronics Reliability, Volume 39, Issue 11, Pages 1519-1714 (November 1999.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.

Volume : 39
Issue : 11
Pages : 1519 - 1714
Date : November 1999

[1] : , Pages 1519-1520
Steven H. Voldman
Lien : vide.pdf - | Article | Journal Format-PDF (79 K)

[2] : ESD protection for mixed-voltage I/O using NMOS transistors stacked in a
cascode configuration, Pages 1521-1529
Warren R. Anderson and David B. Krakauer
Lien : vide.pdf - | Article | Journal Format-PDF (280 K)

[3] : Investigation into socketed CDM (SDM) tester parasitics, Pages 1531-1540
M. Chaine, K. Verhaege, L. Avery, M. Kelly, H. Gieser, K. Bock, L. G.
Henry, T. Meuse, T. Brodbeck and J. Barth
Lien : vide.pdf - | Article | Journal Format-PDF (278 K)

[4] : Bipolar model extension for MOS transistors considering gate coupling
effects in the HBM ESD domain, Pages 1541-1549
Heinrich Wolf, Horst Gieser and Wolfgang Stadler
Lien : vide.pdf - | Article | Journal Format-PDF (199 K)

[5] : Non-uniform triggering of gg-nMOSt investigated by combined emission
microscopy and transmission line pulsing, Pages 1551-1561
Christian Russ, Karlheinz Bock, Mahmoud Rasras, Ingrid De Wolf, Guido
Groeseneken and Herman E. Maes
Lien : vide.pdf - | Article | Journal Format-PDF (546 K)

[6] : Characterization and optimization of a bipolar ESD-device by measurements
and simulations, Pages 1563-1577
Andreas D. Stricker, Stephan Mettler, Heinrich Wolf, Markus Mergens,
Wolfgang Wilkening, Horst Gieser and Wolfgang Fichtner
Lien : vide.pdf - | Article | Journal Format-PDF (422 K)

[7] : Investigations on the thermal behavior of interconnects under ESD
transients using a simplified thermal RC network, Pages 1579-1591
Pascal Salome, Charles Leroux , Philippe Crevel and Jean Pierre Chante
Lien : vide.pdf - | Article | Journal Format-PDF (269 K)

[8] : , Page 1593
Ton J. Mouthaan and Hiroshi Onoda
Lien : vide.pdf - | Article | Journal Format-PDF (47 K)

[9] : Copper metallization reliability, Pages 1595-1602
J. R. Lloyd, J. Clemens and R. Snede
Lien : vide.pdf - | Article | Journal Format-PDF (146 K)

[10] : Modeling and microstructural characterization of incubation,
time-dependent drift and saturation during electromigration in Al¯Si¯Cu
stripes, Pages 1603-1616
A. Witvrouw, H. Bender, Ph. Roussel and K. Maex
Lien : vide.pdf - | Article | Journal Format-PDF (376 K)

[11] : Dynamics of electromigration induced void/hillock growth and
precipitation/dissolution of addition elements studied by in-situ scanning
electron microscopy resistance measurements, Pages 1617-1630
J. D'Haen, P. Cosemans, J. V. Manca, G. Lekens, T. Martens, W. De
Ceuninck, M. D'Olieslaeger, L. De Schepper and K. Maex
Lien : vide.pdf - | Article | Journal Format-PDF (369 K)

[12] : Electromigration induced aluminum atom migration retarding by grain
boundary structure stabilization and copper doping, Pages 1631-1645
M. Hasunuma, H. Toyoda and H. Kaneko
Lien : vide.pdf - | Article | Journal Format-PDF (363 K)

[13] : Early electromigration effects and early resistance changes, Pages
1647-1656
A. Scorzoni, I. De Munari, M. Impronta and N. Kelaidis
Lien : vide.pdf - | Article | Journal Format-PDF (225 K)

[14] : The kinetics of the early stages of electromigration and concurrent
temperature induced processes in thin film metallisations studied by means
of an in-situ high resolution resistometric technique, Pages 1657-1665
J. Van Olmen, J. V. Manca, W. De Ceuninck, L. De Schepper, V. D'Haeger, A.
Witvrouw, K. Maex, B. Vandevelde, E. Beyne and L. Tielemans
Lien : vide.pdf - | Article | Journal Format-PDF (167 K)

[15] : Modeling electromigration as a fluid¯gas system, Pages 1667-1676
Wim Schoenmaker and Violeta Petrescu
Lien : vide.pdf - | Article | Journal Format-PDF (235 K)

[16] : The excess noise in integrated circuit interconnects before and after
electromigration damage, Pages 1677-1690
Jianping Guo, B. K. Jones and G. Trefan
Lien : vide.pdf - | Article | Journal Format-PDF (237 K)

[17] : Long term noise measurements and median time to failure test for the
characterization of electromigration in metal lines, Pages 1691-1696
C. Ciofi, V. Dattilo, B. Neri, S. Foley and A. Mathewson
Lien : vide.pdf - | Article | Journal Format-PDF (153 K)

[18] : Electromigration performance of Al¯Si¯Cu filled vias with titanium glue
layer, Pages 1697-1706
M. Kageyama, K. Hashimoto and H. Onoda
Lien : vide.pdf - | Article | Journal Format-PDF (296 K)

[19] : An evaluation of fast wafer level test methods for interconnect
reliability control, Pages 1707-1714
S. Foley, J. Molyneaux and A. Mathewson
Lien : vide.pdf - | Article | Journal Format-PDF (271 K)

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