Revue : [REVUE234]
Titre : Elsevier Science, Microelectronics Reliability, Volume 39, Issue 2, Pages 159-323, February 1999.
Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.Auteur : Elsevier Science
Volume : 39
Issue : 2
Pages : 159 - 323
Date : February 1999
[1] : Editorial, Page 159
Journal Format-PDF (43 K)
[2] : Switching events in the soft breakdown I¯t characteristic of ultra-thin
SiO2 layers, Pages 161-164
E. Miranda, J. Suñé, R. Rodríguez, M. Nafría and X. Aymerich
Lien : vide.pdf - | Article | Journal Format-PDF (149 K)
[3] : Experimental study of the quasi-breakdown failure mechanism in 4.5
nm-thick SiO2 oxides, Pages 165-169
D. Goguenheim, A. Bravaix, D. Vuillaume, F. Mondon, Ph. Candelier, M.
Jourdain and A. Meinertzhagen
Lien : vide.pdf - | Article | Journal Format-PDF (361 K)
[4] : Electric breakdowns and breakdown mechanisms in ultra-thin silicon oxides,
Pages : 171-179
J. C. Jackson, Ö Oralkan, D. J. Dumin and G. A. Brown
Lien : vide.pdf - | Article | Journal Format-PDF (346 K)
[5] : Gate oxide reliability improvement related to dry local oxidation of
silicon, Pages 181-185
P. Bellutti, N. Zorzi and G. Verzellesi
Lien : vide.pdf - | Article | Journal Format-PDF (457 K)
[6] : Breakdown properties of metal/NIDOS SiO2/silicon structures, Pages 187-190
P. Temple-Boyer, F. Olivié, E. Scheid, G. Sarrabayrouse, J. L. Alay and J.
R. Morante
Lien : vide.pdf - | Article | Journal Format-PDF (137 K)
[7] : On positive charge annihilation and stress-induced leakage current
decrease, Pages 191-196
A. Meinertzhagen, C. Petit, M. Jourdain, F. Mondon and D. Gogenheim
Lien : vide.pdf - | Article | Journal Format-PDF (291 K)
[8] : On the correlation between SILC and hole fluence throughout the oxide,
Pages : 197-201
A. Scarpa, B. De Salvo, G. Ghibaudo, G. Pananakakis, A. Paccagnella and G.
Ghidini
Lien : vide.pdf - | Article | Journal Format-PDF (153 K)
[9] : Measurement and modeling of the annealing kinetics of stress induced
leakage current in ultra-thin oxides, Pages 203-207
P. Riess, G. Ghibaudo, G. Pananakakis and J. Brini
Lien : vide.pdf - | Article | Journal Format-PDF (271 K)
[10] : Stress-induced leakage current in very thin dielectric layers: some
limitations to reliability extrapolation modeling, Pages 209-214
S. Bruyre, E. Vincent and G. Ghibaudo
Lien : vide.pdf - | Article | Journal Format-PDF (198 K)
[11] : Analysis of space and energy distribution of stress-induced oxide traps,
Pages : 215-219
A. S. Spinelli, A. L. Lacaita, D. Minelli and G. Ghidini
Lien : vide.pdf - | Article | Journal Format-PDF (197 K)
[12] : Total dose dependence of radiation-induced leakage current in ultra-thin
gate oxides, Pages 221-226
M. Ceschia, A. Paccagnella, A. Scarpa, A. Cester and G. Ghidini
Lien : vide.pdf - | Article | Journal Format-PDF (239 K)
[13] : Degradation of electron irradiated MOS capacitors, Pages 227-233
A. Candelori, A. Paccagnella, A. Scarpa, G. Ghidini and P. G. Fuochi
Lien : vide.pdf - | Article | Journal Format-PDF (202 K)
[14] : ONO and NO interpoly dielectric conduction mechanisms, Pages 235-239
B. De Salvo, G. Ghibaudo, G. Pananakakis and G. Reimbold
Lien : vide.pdf - | Article | Journal Format-PDF (220 K)
[15] : Dielectric and ferroelectric properties of Perovskite Pb(Zr, Ti)O3 films
deposited by sputtering on Si substrate, Pages 241-250
G. Vélu and G. Rèmiens
Lien : vide.pdf - | Article | Journal Format-PDF (297 K)
[16] : Dielectric characterization of ferroelectric thin films deposited on
silicon, Pages 251-256
C. Legrand, T. Haccart, G. Velu, D. Chambonnet, D. Remiens, L. Burgnies,
F. Mehri and J. C. Carru
Lien : vide.pdf - | Article | Journal Format-PDF (423 K)
[17] : MOCVD of ferroelectric thin films, Pages 257-260
C. Schmidt and E. P. Burte
Lien : vide.pdf - | Article | Journal Format-PDF (143 K)
[18] : Comparison between the properties of amorphous and crystalline Ta2O5 thin
films deposited on Si, Pages 261-268
C. Chaneliere, S. Four, J. L. Autran and R. A. B. Devine
Lien : vide.pdf - | Article | Journal Format-PDF (484 K)
[19] : High electrical resistivity of CVD-diamond, Pages 269-273
J. V. Manca, M. Nesladek, M. Neelen, C. Quaeyhaegens, L. De Schepper and
W. De Ceuninck
Lien : vide.pdf - | Article | Journal Format-PDF (248 K)
[20] : Modelling methodology of silicon oxidation from quantum calculations to
Monte Carlo level, Pages 275-278
A. Estève, M. Djafari Rouhani and D. Estève
Lien : vide.pdf - | Article | Journal Format-PDF (203 K)
[21] : Density functional theory applied to the calculation of dielectric
constant of low-k materials, Pages 279-284
A. Courtot-Descharles, F. Pires, P. Paillet and J. L. Leray
Lien : vide.pdf - | Article | Journal Format-PDF (221 K)
[22] : Optical dispersion analysis within the IR range of thermally grown and
TEOS deposited SiO2 films, Pages 285-289
Dimitris Davazoglou and Vassilis Em. Vamvakas
Lien : vide.pdf - | Article | Journal Format-PDF (154 K)
[23] : Optical characterization of ion implantation in Si and Si/SiO2 structures:
spectroellipsometric (SE) and second harmonic generation (SHG) results,
Pages : 291-295
O. Buiu, S. Taylor, L. Culiuc, M. Gartner and I. Cernica
Lien : vide.pdf - | Article | Journal Format-PDF (274 K)
[24] : A study of the interface states in MIS-structures with thin SiO2 and
SiOxNy layers using deep level transient spectroscopy, Pages 297-302
R. Beyer, H. Burghardt, E. Thomas, R. Reich, D. R. T. Zahn and T. Geßner
Lien : vide.pdf - | Article | Journal Format-PDF (224 K)
[25] : Low pressure chemical vapor deposition from TEOS¯NH3 mixtures:
thermochemical study of the process considering kinetic data, Pages
303-309
C. Vahlas, V. Em. Vamvakas and D. Davazoglou
Lien : vide.pdf - | Article | Journal Format-PDF (291 K)
[26] : Characterization of oxide etching and wafer cleaning using vapor phase
anhydrous hydrofluoric acid and ozone, Pages 311-316
A. J. Bauer, B. Froeschle, M. Beichele and H. Ryssel
Lien : vide.pdf - | Article | Journal Format-PDF (874 K)
[27] : Thin stoichiometric silicon nitride prepared by r.f. reactive sputtering,
Pages : 317-323
F. Qian, G. Temmel, R. Schnupp and H. Ryssel
Lien : vide.pdf - | Article | Journal Format-PDF (401 K)
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